Toshiba CMS10I30A Schottky barrier diode Datasheet

CMS10I30A
Schottky Barrier Diode
CMS10I30A
1. Applications
•
Secondary Rectification in Switching Regulators
•
Reverse-Current Protection in Mobile Devices
2. Features
(1)
Peak forward voltage: VFM = 0.36 V (max) @IFM = 1 A
(2)
Average forward current: IF(AV) = 1 A
(3)
Repetitive peak reverse voltage: VRRM = 30 V
(4)
Small, thin package suitable for high-density board assembly
Toshiba Nickname: M-FLATTM
3. Packaging and Internal Circuit
1: Anode
2: Cathode
3-4E1S
4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Note
Rating
Unit
30
V
A
Repetitive peak reverse voltage
VRRM
Average forward current
IF(AV)
(Note 1)
1
Non-repetitive peak forward surge current
IFSM
(Note 2)
30
Junction temperature
Tj
150
Storage temperature
Tstg
-55 to 150

Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Note 1: Tℓ = 130 , square wave (α = 180°), VR = 15 V
Note 2: f = 50 Hz, half-sine wave
Start of commercial production
1
2010-10
2014-05-12
Rev.1.0
CMS10I30A
5. Thermal Characteristics
Characteristics
Symbol
Thermal resistance (junction-to-ambient)
Thermal resistance (junction-to-lead)
Note
Rth(j-a)
Rth(j-ℓ)
Test Condition
Max
Unit
Device mounted on a ceramic board
(board size: 50 mm × 50 mm)
(soldering land size: 2 mm × 2 mm)
(board thickness: 0.64 mm)
60
/W
Device mounted on a glass-epoxy board
(board size: 50 mm × 50 mm)
(soldering land size: 6 mm × 6 mm)
(board thickness: 1.6 mm)
135
Junction to cathode lead
16
/W
6. Electrical Characteristics (Unless otherwise specified, Ta = 25 )
Characteristics
Peak forward voltage
Repetitive peak reverse current
Junction capacitance
Symbol
Note
Test Condition
Min
Typ.
Max
Unit
V
VFM(1)
IFM = 0.1 A (pulse measurement)

0.25

VFM(2)
IFM = 0.7 A (pulse measurement)

0.32

VFM(3)
IFM = 1 A (pulse measurement)

0.33
0.36
IRRM(1)
VRRM = 5 V (pulse measurement)

14

IRRM(2)
VRRM = 30 V (pulse measurement)

28
100
VR = 10 V, f = 1 MHz

82

Cj
µA
pF
7. Marking
Fig. 7.1 Marking
Marking Code
Part Number
SM
CMS10I30A
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2014-05-12
Rev.1.0
CMS10I30A
8. Usage Considerations
(1)
Schottky barrier diodes (SBDs) have reverse current greater than other types of diodes. This makes
SBDs more vulnerable to damage due to thermal runaway under high-temperature and high-voltage
conditions. Thus, both forward and reverse power losses of SBDs should be considered for thermal and
safety design.
(2)
The absolute maximum ratings are rated values that must not be exceeded during operation, even for an
instant. The following are the recommended general derating methods for designing a circuit board using
this device.
VRRM:Use this rating with reference to (1) above. VRRM has a temperature
coefficient of 0.1 %/ at low temperatures. Take this coefficient into account when designing a
circuit board that will be operated in a low-temperature environment.
IF(AV):We recommend that the worst-case current be no greater than 80 % of the absolute maximum
rating of IF(AV) and that the worst-case junction temperature, Tj, be kept below 120 . When using
this device,
allow margins, referring to the Ta(max)-IF(AV) curve.
IFSM:This rating specifies peak non-repetitive forward surge current. This only applies to an abnormal
operation, which seldom occurs during the lifespan of a device.
Tj:
Derate device parameters in proportion to this rating in order to ensure high reliability.
We recommend that the junction temperature (Tj) of a device be kept below 120 .
(3)
Thermal resistance (junction-to-ambient) varies with the mounting conditions of a device on a circuit
board. An appropriate thermal resistance value should be used, considering the heat sink, circuit board
design and land pattern dimensions (provided for reference only).
(4)
For other design considerations, see the Rectifiers databook or the Toshiba Semiconductor website.
9. Land Pattern Dimensions (for reference only)
Fig. 9.1 Land Pattern Dimensions for Reference Only (Unit: mm)
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2014-05-12
Rev.1.0
CMS10I30A
10. Characteristics Curves (Note)
Fig. 10.1 IF - VF
Fig. 10.2 PF(AV) - IF(AV)
Fig. 10.3 Ta(max) - IF(AV)
Fig. 10.4 Tℓ(max) - IF(AV)
Fig. 10.5 Peak Repetitive Forward Current
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2014-05-12
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CMS10I30A
Fig. 10.6 rth(j-a) - t
Fig. 10.7 Cj - VR
Fig. 10.8 IR - Tj
NOTE: The above characteristics curves are presented for reference only and not guaranteed by production test,
unless otherwise noted.
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2014-05-12
Rev.1.0
CMS10I30A
Package Dimensions
Unit: mm
Weight: 0.023 g (typ.)
Package Name(s)
TOSHIBA: 3-4E1S
Nickname: M-FLAT
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2014-05-12
Rev.1.0
CMS10I30A
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2014-05-12
Rev.1.0
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