Micron MTEDCAE002SAJ Embedded usb mass storage drive Datasheet

Embedded USB Mass Storage Drive (e230)
Features
Embedded USB Mass Storage Drive
(e230)
MTEDCAR002SAJ-1M2/1M2IT, MTEDCAR004SAJ-1N2/1N2IT
MTEDCAR008SAJ-1N2/1N2IT, MTEDCAR016SAJ-1N2/1N2IT
MTEDCBR002SAJ-1M2/1M2IT, MTEDCBR004SAJ-1N2/1N2IT
MTEDCBR008SAJ-1N2/1N2IT, MTEDCBR016SAJ-1N2/1N2IT
MTEDCBE002SAJ-1M2/1M2IT, MTEDCBE004SAJ-1N2/1N2IT
MTEDCBE008SAJ-1N2/1N2IT, MTEDCBE016SAJ-1N2/1N2IT
MTEDCAE002SAJ-1M2/1M2IT, MTEDCAE004SAJ-1N2/1N2IT
MTEDCAE008SAJ-1N2/1N2IT, MTEDCAE016SAJ-1N2/1N2IT
Features
• Capacity (unformatted)3: 2GB, 4GB, 8GB, or 16GB
• Form factor
– Standard (36.9mm x 26.6mm x 9.6mm)
– Low profile (36.9mm x 26.6mm x 5.8mm)
• Voltage: 5V ±5% and 3.3V ±5%
• Operating temperature
– Commercial (0°C to +70°C)
– Industrial (–40°C to +85°C)
• Micron® NAND Flash
• Interface: Universal Serial Bus (USB) Specification,
Revision 2.0
• USB support
– USB Specification, Revisions 2.0, 1.1
– USB Mass Storage Class Specification, Revision
1.0
• Performance
– Sequential READ1: 30 MB/s
– Sequential WRITE 1: 22 MB/s (2GB and 4GB); 28
MB/s (8GB and16GB)
• Reliability: >1 million device hours mean time between failure (MTBF)
• Endurance: useful operating life of at least 5 years
under the following conditions:
– 8760 power-on hours per year
– Active 100% of power-on hours
– Typical operating conditions2: 2GB module: 16
GB/day; 4GB module: 32 GB/day; 8GB module:
64 GB/day; 16GB module: 128 GB/day
• Static and dynamic wear-leveling
• 15-bit error correction code (ECC)
• Reliability reporting
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
Notes:
1. Typical transfer rate measured with
H2BENCH 3.6.
2. Assumes that 70% of total usable drive capacity contains static files.
3. 1GB = 1 billion bytes; formatted capacity is
less.
Warranty: Contact your Micron sales representative
for further information regarding the product,
including product warranties.
1
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© 2011 Micron Technology, Inc. All rights reserved.
Products and specifications discussed herein are subject to change by Micron without notice.
Embedded USB Mass Storage Drive (e230)
Features
Part Numbering Information
Micron’s embedded USB drives are available in different configurations and densities. Visit www.micron.com for a
list of valid part numbers.
Table 1: Part Number Example
Part Number Category
Micron
Tech- Product
nology Family
MT
ED
Drive
Interface
Drive
Form
Factor
Drive
Density
NAND
Flash
Type
Product
Family
Sector
Size
NAND
Component
Revision
C
AE
002
S
AJ
-1
M
1
Operating
Temper- Producature
tion
Range Status
IT
ES
Table 2: Part Number Information Scheme
Part Number
Category
Category Details
Micron Technology
Micron Technology
Product Family
ED = Embedded drive
Drive Interface
C = USB 2.0
Drive Form Factor
AE = Embedded USB: 5V standard profile (36.9mm x 26.6mm x 9.6mm)
BE = Embedded USB: 5V low profile (36.9mm x 26.6mm x 5.8mm)
AR = Embedded USB: 3V standard profile (36.9mm x 26.6mm x 9.6mm)
BR = Embedded USB: 3V low profile (36.9mm x 26.6mm x 5.8mm)
Drive Density
002 = 2GB
004 = 4GB
008 = 8GB
016 = 16GB
NAND Flash Type
S = SLC
Product Family
AJ = Option J
Sector Size
1 = 512-byte
NAND Component
M = 8Gb; x8; 3.3V
N = 16Gb; x8; 3.3V
Revision
1 = First generation
2 = Second generation
3 = Third generation
Operating Temperature Range
Blank = Commercial (0°C to 70°C)
Production Status
Blank = Production
IT = Industrial (40°C to 85°C)
ES = Engineering sample
MS = Mechanical sample
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
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© 2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
General Description
General Description
Micron embedded universal serial bus (USB) mass storage drives provide 2GB, 4GB,
8GB, or 16GB of USB 2.0-compatible memory storage in a small form factor. The embedded USB drive is an ideal solution for applications that require low cost and high reliability. Typical applications include PC caching and boot drives for embedded computing, server, and networking systems.
High performance, reliability, and easy implementation make Micron embedded USBs
an ideal storage solution. To consistently deliver the best possible performance, the embedded USB uses only SLC NAND Flash, and all densities use two x8 NAND channels to
the controller. In addition to being fast, SLC NAND Flash offers solid reliability, coupled
with ECC and wear leveling. The USB system interface is widely available in many system designs and is easy to implement, enabling rapid time to market.
The embedded USB consists of two TSOP-packaged Micron NAND Flash components,
a USB controller, and a 10-pin USB connector on a PCB. Different densities are available
depending on the number of die in each package and the density of each NAND Flash
die. The drive operates at 5V ±5% or 3.3V ±5%. It uses industry-standard 10-pin connectors and supports USB Specification, Revision 2.0. It is also backward compatible with
Revision 1.1 and can be used with operating systems that support USB Mass Storage
Class Specification, Revision 1.0.
Figure 1: Functional Block Diagram
USB protocol
USB
connector
NAND data bus
Channel 1
USB
controller
Micron
NAND Flash
NAND command
Channel 1
NAND data bus
Channel 2
Micron
NAND Flash
Table 3: Nominal Package Dimensions, Density, and Weight
Value
Unit
Height
9.6 (standard)
5.8 (low profile)
mm
Width
26.6
mm
Length
36.9
mm
Density
2, 4, 8, 16
GB
4.5
g
Unit weight
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
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© 2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
General Description
Figure 2: Pin Assignments: 2 x 5 Connector
9
Key
7
GND
5
USB
data
(+)
3
USB
data
(–)
1
Vcc
(+5V)
1
Vcc
(+5V)
3
USB
data
(–)
5
USB
data
(+)
7
GND
9
Key
NC
NC
NC
NC
NC
NC
NC
NC
NC
NC
10
8
6
4
2
2
4
6
8
10
Top view (through PCB)
Note:
Bottom view
1. Diagram not to scale.
Table 4: Signal/Pin Descriptions
Symbol
USB data (+), USB data (–)
Type
I/O
Function
Data inputs/outputs: The bidirectional I/Os transfer address, data, and instruction information. Data is output
only during READ operations; at other
times the I/Os are inputs.
VCC
Supply
VCC power supply pin.
VSS
Supply
VSS ground connection
NC
–
No connect: NC pins are not internally
connected. These pins can be driven or
left floating.
Key
–
This pin is keyed.
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
Error Management
Error Management
The embedded USB incorporates advanced technology for defect and error management. It uses various combinations of hardware-based error correction algorithms and
firmware-based wear-leveling algorithms.
Over the life of the drive, uncorrectable errors may occur. An uncorrectable error is defined as data that is reported as successfully programmed to the drive, but when it is
read out of the drive, the data differs from what was programmed. See the Uncorrectable Bit Error Rate Table.
The mean time between failures (MTBF) can be predicted based on component reliability data obtained by following the methods referenced in the Telecordia SR-332 reliability prediction procedures for electronic equipment.
Table 5: System Reliability
Density
MTFB (Operating Hours)
2–16GB
>1 million device hours
Table 6: Uncorrectable Bit Error Rate
Uncorrectable Bit Error Rate (BER)1
Operation
<1 bit error in 1015 bits
READ
Note:
1. BER is measured with a WRITE-to-READ ratio of 1:1.
Wear-Leveling Algorithm
The controller adds a built-in RAM register unit to record the erase count of each block.
Accordingly, the controller can decide the frequency of wear leveling and choose the
proper blocks to swap. This technique successfully averages the erase count of the data
blocks. Also, an enhanced wear leveling algorithm now includes most static blocks in
the recycling pool. Increasing the number of blocks makes the wear-leveling algorithm
more robust, and in turn extends product life.
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
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Embedded USB Mass Storage Drive (e230)
Electrical Characteristics
Electrical Characteristics
Stresses greater than those listed may cause permanent damage to the drive. This is a
stress rating only, and functional operation of the drive at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
Table 7: Absolute Maximum Ratings
Parameter/Condition
Symbol
Min
Max
Unit
VCC
–0.6
5.25
V
VCC supply voltage
Table 8: DC and Operating Characteristics
Parameter/Condition
Symbol
Standby current
Isb
Active current
ICC1
Min
Typ
Max
Unit
Condition
–
60
70
mA
VCC = 3V
–
50
60
mA
VCC = 5V
–
100
120
mA
VCC = 3V /5V
Table 9: Recommended Operating Conditions
Parameter/Condition
Operating temperature
Symbol
Min
Typ
Max
Unit
TA
0
–
70
°C
–40
–
85
°C
5V
VCC
4.75
5.00
5.25
V
3.3V
VCC
2.85
3.3
3.5
V
VSS
0
0
0
V
Commercial
Industrial
VCC supply voltage
Ground supply voltage
Table 10: Shock and Vibration
Parameter/Condition
Specification
Shock
1500g/0.5ms
Vibration
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
5–500Hz at 3.1G
6
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© 2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
Compliance
Compliance
Micron embedded USB drives comply with the following requirements:
• CE (Europe): EN55022, 2006 Class B and EN55024, 1998 + A1: 2001 + A2:2003
• FCC: CFR Title 47, Part 15, ICES-003, all Class B
• UL (US): approval to UL-60950-1, 2nd Edition, 2007-03-27, IEC 60950-1:2005, 2nd Edition
• RoHS, “green” package
Configuration
The following configuration options are available:
• Micron's embedded USB drive can be configured as a boot drive.
• The standard fix configuration should be mounted as local drive.
Note: The embedded USB drive cannot be configured as a removable drive.
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
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© 2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
Mechanical Information
Mechanical Information
The standard 10-pin (2 x 5) female electrical connector has a height of 7.4mm and a
pitch of 2.54mm. It supports the standard USB 2.0 interface. The low profile 10-pin (2 x
5) female electrical connector has a height of 3.6mm and a pitch of 2.0mm. It supports
the standard USB 2.0 interface. A mounting hole is also provided on the PCB for a stable, reliable connection to the mounting board.
The motherboard pin headers listed in Table 9 are compatible with Micron’s embedded
USB drives. Pin headers that are not listed may also be compatible.
Table 11: Compatible Pin Headers
Manufacturer
Profile
Part Number
Type
Pinrex
Standard
212-92-05GB01
SMT
210-92-05GB01
Straight
Amtek
Standard
PHIFS25-205GB
Press fit
PHIS25-205GB
Straight
TMM-105-01-S-D-02
Straight
Samtec
Low profile
Reference Documents
Reference documentation for the USB 2.0 standard (USB 2.0 specification, technical
documents, compliance test procedures, and other related documents) can be found at
www.usb.org/developers/docs.
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eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
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Embedded USB Mass Storage Drive (e230)
Package Dimensions
Package Dimensions
Figure 3: Embedded USB Package, Standard Profile
9.6 ±0.1
26.6 ±0.25
1.1
2.54
7.5
25 ±0.25
2.45
2.54
36.9 ±0.25
31.16 ±0.25
27.5 ±0.25
20.7 ±0.25
2.95
4.9
2.87
3X Ø2.03
Ø3.2
20.7 ±0.25
1.6
1
Note:
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
1. All dimensions are in millimeters.
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© 2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
Package Dimensions
Figure 4: Embedded USB Package, Low Profile
5.8 ±0.1
26.6 ±0.25
1.2
25 ±0.25
2.0
3.6
2.45
2.0
36.9 ±0.25
31.16 ±0.25
27.5 ±0.25
20.7 ±0.25
2.95
4.9
2.87
3X Ø2.03
Ø3.2
20.7 ±0.25
1.6
1
Note:
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
1. All dimensions are in millimeters.
10
Micron Technology, Inc. reserves the right to change products or specifications without notice.
© 2011 Micron Technology, Inc. All rights reserved.
Embedded USB Mass Storage Drive (e230)
Revision History
Revision History
Rev. D – 4/13
• Updated the package drawing
• Updated densities in order information
Rev. C, Advance – 7/12
• Added 3V information to DC and Operating Conditions table
Rev. B, Advance – 9/11
• Added low profile and 3V information
Rev. A, Advance – 4/11
• Initial release
8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900
www.micron.com/productsupport Customer Comment Line: 800-932-4992
Micron and the Micron logo are trademarks of Micron Technology, Inc.
All other trademarks are the property of their respective owners.
This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein.
Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur.
PDF: 09005aef84970b4f
eusb_MTED_230_embedded.pdf - Rev. D 4/13 EN
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Micron Technology, Inc. reserves the right to change products or specifications without notice.
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