Infrared Product Data Sheet LTE-3273DL Spec No. :DS50-2014-0066 Effective Date: 07/22/2017 Revision: A LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C. Tel: 886-2-2222-6181 Fax: 886-2-2221-1948 / 886-2-2221-0660 http://www.liteon.com/opto IR Emitter and Detector LTE-3273DL 1. Description Lite-On offers a broad range of discrete infrared components for application such as remote controller, IR wireless data transmission, security alarm & etc. The product line includes GaAs 940nm IREDs, AIGaAs high power 880nm IREDs, AIGaAs high speed 875nm/850nm IREDs, PIN Photodiodes, Phototransistor and Photodarlingtons. 1. 1. Features Special for high current and low forward voltage Available for pulse operating Wide viewing angle Blue transparent color package 1.2. Applications Sensor Remote controller 940nm emitter 2. Outline Dimensions Notes : 1. 2. 3. 4. All dimensions are in millimeters (inches). Tolerance is ±0.25mm (.010") unless otherwise noted. Protruded resin under flange is 0.5mm (.02") max. Lead spacing is measured where the leads emerge from the package. 5. Specifications are subject to change without notice. 6. Manufacturing site: Thailand & ChangZhou 1/3 Part No. : LTE-3273DL BNS-OD-FC002/A4 IR Emitter and Detector LTE-3273DL 3. Absolute Maximum Ratings at TA=25℃ ℃ Parameter Power Dissipation Maximum Rating Unit 150 mW 2 A 100 mA 5 V Peak Forward Current (300pps, 10μs pulse) Continuous Forward Current Reverse Voltage Operating Temperature Range -40°C to + 85°C Storage Temperature Range -55°C to + 100°C Lead Soldering Temperature [1.6mm (.063") From Body] 260°C for 5 Seconds 4. Electrical / Optical Characteristics at TA=25℃ ℃ Parameter Radiant Intensity Symbol Min. Typ. 5.6 8.0 Max. Unit Test Condition IF = 20mA IE mW/sr 28.0 40.0 IF = 100mA λPeak 940 nm IF = 20mA Spectral Line Half-Width Δλ 50 nm IF = 20mA Forward Voltage VF Peak Emission Wavelength 1.25 Value Angle IR 2θ1/2 IF = 50mA V 1.85 Reverse Current 1.6 2.3 100 45 IF = 500mA μA VR = 5V deg. 2/3 Part No. : LTE-3273DL BNS-OD-FC002/A4 IR Emitter and Detector LTE-3273DL 5. Typical Electrical / Optical Characteristics Curves (25℃ Ambient Temperature Unless Otherwise Noted) 120 Forward Current IF (mA) Relative Radiant Intensity 1.0 0.5 80 60 40 20 0 940 1040 -40 -20 0 20 40 60 80 100 Wavelength (nm) Ambient Temperature Ta ( o C) FIG.1 SPECTRAL DISTRIBUTION FIG.2 FORWARD CURRENT VS. AMBIENT TEMPERATURE 100 1.2 Output Power Relative To Value at IF=20mA Forward Current (mA) 0 840 100 80 60 40 20 0 1.0 0.8 0.6 0.4 0.2 0 0 1.2 1.6 2.0 2.4 2.8 -20 0 20 40 60 80 o Forward Voltage (V) Ambient Temperature Ta ( C) FIG.3 FORWARD CURRENT VS. FORWARD VOLTAGE FIG.4 RELATIVE RADIANT INTENSITY VS. AMBIENT TEMPERATURE 0 o 10 o 20 o 30 Relative Radiant Intensity Output Power Relative To Value at IF=20mA 10.0 8.0 6.0 4.0 2.0 40 1.0 0.9 50 0.8 60 0.7 70 80 90 o o o o o o o 0 0 40 80 120 160 200 0.5 0.3 0.1 0.2 0.4 0.6 Foward Current (mA) FIG.5 RELATIVE RADIANT INTENSITY VS. FORWARD CURRENT FIG.6 RADIATION DIAGRAM 3/3 Part No. : LTE-3273DL BNS-OD-FC002/A4