Vishay EPU3006-N3 Ultrafast rectifier, 30 a fred ptâ® Datasheet

New Product
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Ultrafast Rectifier, 30 A FRED Pt®
FEATURES
• Low forward voltage drop
• Ultrafast recovery time
• 175 °C operating junction temperature
• Compliant to RoHS Directive 2002/95/EC
TO-247AC
TO-247AC modified
Base cathode
4, 2
1
Anode
• Designed and
JEDEC-JESD47
Base cathode
2
3
Anode
1
Cathode
VS-APU3006-F3
VS-APU3006-N3
Ultralow VF, soft-switching ultrafast rectifiers optimized for
Discontinuous (Critical) Mode (DCM) Power Factor
Correction (PFC).
The minimized conduction loss, optimized stored charge
and low recovery current minimized the switching losses
and reduce over dissipation in the switching element and
snubbers.
The device is also intended for use as a freewheeling diode
in power supplies and other power switching applications.
PRODUCT SUMMARY
TO-247AC,
TO-247AC modified (2 pins)
30 A
VR
600 V
VF at IF
2V
trr typ.
30 ns
TJ max.
175 °C
Diode variation
Single die
to
DESCRIPTION/APPLICATIONS
3
Anode
IF(AV)
according
• Halogen-free according to IEC 61249-2-21
definition (-N3 only)
VS-EPU3006-F3
VS-EPU3006-N3
Package
qualified
APPLICATIONS
AC/DC SMPS 70 W to 400 W
e.g. laptop and printer AC adaptors, desktop PC, TV and
monitor, games units, and DVD AC/DC power supplies.
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
MAX.
UNITS
600
V
Repetitive peak reverse voltage
VRRM
Average rectified forward current
IF(AV)
TC = 127 °C
30
Non-repetitive peak surge current
IFSM
TC = 25 °C
200
Operating junction and storage
temperatures
TJ, TStg
A
- 65 to 175
°C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER
Breakdown voltage,
blocking voltage
Forward voltage
SYMBOL
VBR,
VR
VF
TEST CONDITIONS
MIN.
TYP.
MAX.
600
-
-
IF = 30 A
-
1.4
2
IR = 100 μA
IF = 30 A, TJ = 150 °C
-
1.15
1.35
VR = VR rated
-
-
30
TJ = 150 °C, VR = VR rated
-
-
250
UNITS
V
μA
Reverse leakage current
IR
Junction capacitance
CT
VR = 600 V
-
20
-
pF
Series inductance
LS
Measured lead to lead 5 mm from package body
-
8.0
-
nH
Revision: 15-Aug-11
Document Number: 93570
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DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER
MIN.
TYP.
MAX.
IF = 1 A, dIF/dt = 50 A/μs, VR = 30 V
-
30
45
TJ = 25 °C
-
45
-
TJ = 125 °C
-
100
-
-
5.6
-
-
10
-
TJ = 25 °C
-
127
-
TJ = 125 °C
-
580
-
MIN.
TYP.
MAX.
UNITS
TJ, TStg
- 65
-
175
°C
Thermal resistance,
junction to case
RthJC
-
0.7
1.1
°C/W
Thermal resistance,
junction to ambient per leg
RthJA
Typical socket mount
-
-
70
Thermal resistance,
case to heatsink
RthCS
Mounting surface, flat, smooth and
greased
-
0.5
-
-
2.0
-
g
-
0.07
-
oz.
1.2
(10)
-
2.4
(20)
kgf · cm
(lbf · in)
Reverse recovery time
Peak recovery current
Reverse recovery charge
SYMBOL
trr
IRRM
Qrr
TEST CONDITIONS
TJ = 25 °C
TJ = 125 °C
IF = 30 A
dIF/dt = 200 A/μs
VR = 200 V
UNITS
ns
A
nC
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
Maximum junction and storage
temperature range
SYMBOL
TEST CONDITIONS
Weight
Mounting torque
Marking device
Revision: 15-Aug-11
Case style TO-247AC
APU3006
Case style TO-247AC modified
EPU3006
Document Number: 93570
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
New Product
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1000
1000
175 °C
100
Reverse Current - IR (μA)
150 °C
10
100 °C
1
75 °C
0.1
50 °C
25 °C
0.01
100
0.001
0
100
TJ = 175 °C
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
1000
10
Junction Capacitance - CT (pF)
Instantaneous Forward Current - IF (A)
125 °C
TJ = 150 °C
TJ = 25 °C
1
0.0
100
10
1
0.5
1.0
1.5
2.0
2.5
0
100
Forward Voltage Drop - VFM (V)
200
300
400
500
600
Reverse Voltage - VR (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
Thermal Impedance ZthJC (°C/W)
10
D = 0.5
1
D = 0.2
D = 0.1
D = 0.05
0.1
D = 0.02
Single Pulse
(Thermal Resistance)
D = 0.01
0.01
1E-05
1E-04
1E-03
1E-02
1E-01
1E+00
t1 , Rectangular Pulse Duration (s)
Fig. 4 - Max. Thermal Impedance ZthJC Characteristics
Revision: 15-Aug-11
Document Number: 93570
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Vishay Semiconductors
60
170
RMS Limit
50
Average Power Loss (W)
Allowable Case Temperature (°C)
180
160
150
140
DC
130
120
40
D = 0.01
D = 0.02
D = 0.05
D = 0.1
D = 0.2
D = 0.5
DC
30
20
10
110
0
100
0
5
10
15
20
25
30
35
40
0
45
Average Forward Current - IF(AV) (A)
5
10
15
20
25
30
35
40
45
Average Forward Current - IF(AV) (V)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
Fig. 6 - Forward Power Loss Characteristics
1800
130
120
1600
110
1400
100
IF = 30 A, 125 °C
1200
90
1000
Qrr (nC)
trr (ns)
80
70
60
50
800
IF = 30 A, 125 °C
600
IF = 30 A, 25 °C
40
400
30
20
typical value
10
100
1000
dIF/dt (A/μs)
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
Revision: 15-Aug-11
IF = 30 A, 25 °C
200
typical value
0
100
1000
dIF/dt (A/μs)
Fig. 8 - Typical Stored Charge vs. dIF/dt
Document Number: 93570
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VR = 200 V
0.01 Ω
L = 70 μH
D.U.T.
dIF/dt
adjust
D
IRFP250
G
S
Fig. 9 - Reverse Recovery Parameter Test Circuit
(3)
trr
IF
ta
tb
0
Qrr
(2)
IRRM
(4)
0.5 IRRM
dI(rec)M/dt (5)
0.75 IRRM
(1) dIF/dt
(1) dIF/dt - rate of change of current
through zero crossing
(2) IRRM - peak reverse recovery current
(3) trr - reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current.
(4) Qrr - area under curve defined by trr
and IRRM
Qrr =
trr x IRRM
2
(5) dI(rec)M/dt - peak rate of change of
current during tb portion of trr
Fig. 10 - Reverse Recovery Waveform and Definitions
Revision: 15-Aug-11
Document Number: 93570
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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ORDERING INFORMATION TABLE
Device code
VS-
E
P
U
30
06
-F3
1
2
3
4
5
6
7
1
-
Vishay Semiconductors product
2
-
Ultrafast MUR series
• A = Single diode
• E = Single diode (modified)
3
-
P = TO-247AC
4
-
U = Ultrafast recovery time
5
-
Current code (30 = 30 A)
6
-
Voltage code (06 = 600 V)
7
-
Environmental digit:
-F3 = RoHS compliant and totally lead (Pb)-free
-N3 = Halogen-free, RoHS compliant and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
QUANTITY PER TUBE
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
VS-APU3006-F3
25
500
Antistatic plastic tube
VS-APU3006-N3
25
500
Antistatic plastic tube
VS-EPU3006-F3
25
500
Antistatic plastic tube
VS-EPU3006-N3
25
500
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
Revision: 15-Aug-11
TO-247AC
www.vishay.com/doc?95223
TO-247AC modified
www.vishay.com/doc?95253
TO-247AC
www.vishay.com/doc?95007
TO-247AC modified
www.vishay.com/doc?95442
Document Number: 93570
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) Ø P
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
FP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
0.10 M C A M
Planting
(4)
E1
0.01 M D B M
View A - A
C
2x e
A1
b4
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
FK
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerancing per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 16-Jun-11
Document Number: 95223
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
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Vishay Semiconductors
DIMENSIONS in millimeters and inches
A
A
(3)
(6) ΦP
E
B
(2) R/2
N
A2
S
(Datum B)
Ø K M DBM
ΦP1
A
D2
Q
2xR
(2)
D1 (4)
D
1
4
D
3
2
Thermal pad
(5) L1
C
L
A
See view B
2 x b2
3xb
Planting
View A - A
C
2x e
A1
b4
0.10 M C A M
(4)
E1
(b1, b3, b5)
Lead assignments
Base metal
D DE
(c)
c1
E
C
C
Diodes
1. - Anode/open
2. - Cathode
3. - Anode
(b, b2, b4)
(4)
Section C - C, D - D, E - E
SYMBOL
A
A1
A2
b
b1
b2
b3
b4
b5
c
c1
D
D1
MILLIMETERS
MIN.
MAX.
4.65
5.31
2.21
2.59
1.50
2.49
0.99
1.40
0.99
1.35
1.65
2.39
1.65
2.37
2.59
3.43
2.59
3.38
0.38
0.86
0.38
0.76
19.71
20.70
13.08
-
INCHES
MIN.
MAX.
0.183
0.209
0.087
0.102
0.059
0.098
0.039
0.055
0.039
0.053
0.065
0.094
0.065
0.094
0.102
0.135
0.102
0.133
0.015
0.034
0.015
0.030
0.776
0.815
0.515
-
View B
NOTES
SYMBOL
3
4
D2
E
E1
e
K
L
L1
N
P
P1
Q
R
S
MILLIMETERS
MIN.
MAX.
0.51
1.30
15.29
15.87
13.72
5.46 BSC
2.54
14.20
16.10
3.71
4.29
7.62 BSC
3.56
3.66
6.98
5.31
5.69
4.52
5.49
5.51 BSC
INCHES
MIN.
MAX.
0.020
0.051
0.602
0.625
0.540
0.215 BSC
0.010
0.559
0.634
0.146
0.169
0.3
0.14
0.144
0.275
0.209
0.224
1.78
0.216
0.217 BSC
NOTES
3
Notes
(1) Dimensioning and tolerance per ASME Y14.5M-1994
(2) Contour of slot optional
(3) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at
the outermost extremes of the plastic body
(4) Thermal pad contour optional with dimensions D1 and E1
(5) Lead finish uncontrolled in L1
(6) P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154")
(7) Outline conforms to JEDEC outline TO-247 with exception of dimension c
Revision: 21-Jun-11
Document Number: 95253
1
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Part Marking Information
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Vishay Semiconductors
TO-247AC modified E
Example:
Part number
xxxxxxx (1)
V Z119X
A
C
Assembly
lot code
This is a xxxxxxx (1) with
assembly lot code AC,
assembled on WW 19, 2011
in the assembly line ”X”
Product version (optional):
Z (replaced according below table)
Date code:
Year 1 = 2011
Week 19
Line X
Note
(1) If part number contain “H” as last digit, product is AEC-Q101 qualified
ENVIRONMENTAL NAMING CODE (Z)
PRODUCT DEFINITION
A
Termination lead (Pb)-free
Revision: 09-Aug-11
B
Totally lead (Pb)-free
E
RoHS compliant and termination lead (Pb)-free
F
RoHS compliant and totally lead (Pb)-free
M
Halogen-free, RoHS compliant and termination lead (Pb)-free
N
Halogen-free, RoHS compliant and totally lead (Pb)-free
G
Green
Document Number: 95442
1
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definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
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Revision: 12-Mar-12
1
Document Number: 91000
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