DMN2005LP4K N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Very Low Gate Threshold Voltage, 0.9V Max. Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) ESD Protected Gate Ultra Low Profile Package Qualified to AEC-Q101 Standards for High Reliability Case: X2-DFN1006-3 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish NiPdAu over Copper leadframe; Solderable per MIL-STD-202, Method 208 e4 Weight: 0.001 grams (Approximate) Drain X2-DFN1006-3 Body Diode Gate S Gate Protection Diode Bottom View ESD PROTECTED D Source Equivalent Circuit G Top View Pin-Out Ordering Information (Note 4) Part Number DMN2005LP4K-7 DMN2005LP4K-7B Notes: Marking DN DN Reel size (inches) 7 7 Tape width (mm) 8 8 Quantity per reel 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. DMN2005LP4K Document number: DS30799 Rev. 8 - 2 1 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2005LP4K Marking Information From date code 1527 (YYWW), this changes to: DN DN Top View Bar Denotes Gate and Source Side Top View Dot Denotes Drain Side DN DN DN DN DN DN DMN2005LPK-7 DN Top View Bar Denotes Gate and Source Side DN = Part Marking Code DMN2005LP4K Document number: DS30799 Rev. 8 - 2 DN DN DN DMN2005LPK-7B 2 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2005LP4K Maximum Ratings (@TA = +25°C unless otherwise specified.) Characteristic Symbol Drain-Source Voltage VDSS Gate-Source Voltage Drain Current per element (Note 5) VGSS Continuous Pulsed (Note 6) ID Value 20 Unit V 10 300 350 V mA Thermal Characteristics (@TA = +25°C unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Symbol PD Value 400 Unit mW Thermal Resistance, Junction to Ambient RJA TJ, TSTG 280 °C/W -65 to +150 °C Operating and Storage Temperature Range Electrical Characteristics (@TA = +25°C unless otherwise specified.) Characteristic OFF CHARACTERISTICS (per element) (Note 7) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit Test Condition BVDSS 20 10 VGS = 0V, ID = 100µA IDSS V Zero Gate Voltage Drain Current µA VDS = 17V, VGS = 0V Gate-Source Leakage ON CHARACTERISTICS (per element) (Note 7) Gate Threshold Voltage IGSS 5 µA VGS = 8V, VDS = 0V VGS(th) 0.53 0.9 V VDS = VGS, ID = 100µA RDS (ON) 0.35 0.4 0.45 0.55 0.65 1.5 1.7 1.7 3.5 3.5 Ω VGS = 4V, ID = 10mA VGS = 2.7V, ID = 200mA VGS = 2.5V, ID = 10mA VGS = 1.8V, ID = 200mA VGS = 1.5V, ID = 1mA Yfs 40 mS 37.1 6.5 pF pF Static Drain-Source On-Resistance Forward Transfer Admittance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Ciss Coss Crss 4.8 pF Turn-On Time ton 4.06 Turn-Off Time toff nS Reverse Transfer Capacitance Switching Time Notes: 13.7 VDS = 3V, ID = 10mA VDS = 10V, VGS = 0V f = 1.0MHz VDD = 10V, Rl = 47Ω, VGEN = 4.5V, RGEN = 10Ω. 5. Device mounted on FR-4 PCB. 6. Pulse width 10µS, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. DMN2005LP4K Document number: DS30799 Rev. 8 - 2 3 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2005LP4K 1.5 2.0 VGS = 4.5V VDS = 5V 1.5 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = 2.5V VGS = 2.0V VGS = 1.8V 1.0 1.0 0.5 TA = 150°C VGS = 1.5V 0.5 TA = 125°C TA = 85°C VGS = 1.2V 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 Typical Output Characteristics 0 0 5 0.8 0.6 VGS = 1.8V VGS = 2.5V 0.4 VGS = 4.5V 0.2 0 0 0.4 0.8 1.2 1.6 ID, DRAIN-SOURCE CURRENT (A) Fig. 3 Typical On-Resistance vs. Drain Current and Gate Voltage VGS = 2.5.V ID = 500mA 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 5 On-Resistance Variation with Temperature DMN2005LP4K Document number: DS30799 Rev. 8 - 2 VGS = 4.5V 0.6 TA = 150°C TA = 125°C 0.4 TA = 85°C TA = 25°C 0.2 TA = -55°C 0 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) VGS = 4.5V ID = 1.0A 1.2 3 0.8 2 1.6 1.4 0.5 1 1.5 2 2.5 VGS, GATE SOURCE VOLTAGE (V) Fig. 2 Typical Transfer Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 TA = 25°C TA = -55°C 4 of 7 www.diodes.com 0.4 0.8 1.2 1.6 ID, DRAIN CURRENT (A) Fig. 4 Typical Drain-Source On-Resistance vs. Drain Current and Temperature 0.8 0.6 VGS = 2.5V ID = 500mA 0.4 0.2 VGS = 4.5V ID = 1.0A 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (°C) Fig. 6 On-Resistance Variation with Temperature May 2015 © Diodes Incorporated DMN2005LP4K 1.6 VGS(TH), GATE THRESHOLD VOLTAGE (V) 1.2 IS, SOURCE CURRENT (A) 1.0 ID = 1mA 0.8 ID = 250µA 0.6 0.4 1.2 T A = 25°C 0.8 0.4 0.2 0 -50 0 -25 0 25 50 75 100 125 150 TA, AMBIENT TEMPERATURE (°C) Fig. 7 Gate Threshold Variation vs. Ambient Temperature 0 0.2 0.4 0.6 0.8 1.0 VSD, SOURCE-DRAIN VOLTAGE (V) Fig. 8 Diode Forward Voltage vs. Current 1.2 60 f = 1MHz C, CAPACITANCE (pF) 50 40 Ciss 30 20 10 Coss C rss 0 0 5 10 15 VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 9 Typical Capacitance DMN2005LP4K Document number: DS30799 Rev. 8 - 2 20 5 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2005LP4K Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A A1 Seating Plane D b Pin #1 ID e E b2 X2-DFN1006-3 Dim Min Max Typ A 0.40 A1 0.00 0.05 0.03 b 0.10 0.20 0.15 b2 0.45 0.55 0.50 D 0.95 1.05 1.00 E 0.55 0.65 0.60 e 0.35 L1 0.20 0.30 0.25 L2 0.20 0.30 0.25 L3 0.40 z 0.02 0.08 0.05 All Dimensions in mm z L3 L2 L1 Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for latest version. C Y Dimensions C G1 G2 X X1 Y Y1 Y1 G2 X G1 Value (in mm) 0.70 0.30 0.20 0.40 1.10 0.25 0.70 X1 DMN2005LP4K Document number: DS30799 Rev. 8 - 2 6 of 7 www.diodes.com May 2015 © Diodes Incorporated DMN2005LP4K IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. 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