Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ General Description Features The MDS5652 uses advanced MagnaChip’s MOSFET Technology, which provides low on-state resistance, high switching performance and exellent reliability. VDS = 30V ID = 7.5A @VGS = 10V RDS(ON) < 22mΩ @VGS = 10V < 35mΩ @VGS = 4.5V Applications Portable Equipment Applications DC-DC Converter applications General purpose applications D1 5(D2) 6(D2) 7(D1) 8(D1) 2(G1) 1(S1) 4(G2) 3(S2) G1 D2 G2 S1 S2 Absolute Maximum Ratings (Ta =25oC unless otherwise noted) Characteristics Drain-Source Voltage Gate-Source Voltage Symbol Rating Unit VDSS 30 V VGSS ±20 V 7.5 A 4.8 A 30 A o Ta=25 C Continuous Drain Current Ta=100oC Pulsed Drain Current ID IDM o Ta=25 C Power Dissipation(1) Ta=100oC Single Pulse Avalanche Energy(2) PD 2.0 EAS 12 TJ, Tstg -55~+150 Symbol Rating Thermal Resistance, Junction-to-Ambient(Steady-State) RθJA 62.5 Thermal Resistance, Junction-to-Case RθJC 50 Junction and Storage Temperature Range W 0.8 mJ o C Thermal Characteristics Characteristics (1) March. 2009. Version 0.0 1 Unit o C/W MagnaChip Semiconductor Ltd. MDS5652 – Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ MDS5652 Part Number Temp. Range MDS5652URH o -55~150 C Package Packing RoHS Status SOIC-8 Tape & Reel Halogen Free Electrical Characteristics (TJ =25oC unless otherwise noted) Characteristics Symbol Test Condition Min Typ Max Unit 30 - - V Static Characteristics Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V Zero Gate Voltage Drain Current IDSS VDS = 24V, VGS = 0V 1 µA Gate to Source Leakage Current IGSS VGS = ±20V, VDS = 0V - - 100 ㎁ Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 1 1.9 3 V Static Drain to Source On Resistance RDS(ON) VGS = 10V, ID = 7.5A - Forward Transconductance gFS 16 22 VGS = 4.5V, ID = 5.0A 23 35 VDS = 5V, ID = 7.5A 25 - 11.7 - mΩ S Dynamic Characteristics Total Gate Charge Qg(10V) Total Gate Charge Qg(4.5V) Gate to Source Charge Qgs Gate to Drain Charge Qgd Input Capacitance Ciss Reverse Transfer Capacitance Crss VDD = 30V, ID = 7.5A, VGS = 10V VDS = 30V, VGS = 0V, f = 1.0MHz 6.1 - nC 2.1 - - 3.2 - - 460 - - 58 - pF Output Capacitance Coss - 154 - Turn-On Delay Time td(on) - 3.8 - Turn-On Rise Time tr - 24.6 - Turn-Off Delay Time td(off) - 17.4 - - 10.6 - - 0.75 - 16 - ns - 7.5 - nC Turn-Off Fall Time VGS = 10V ,VDD = 15V, RL = 2.1Ω, RGEN = 3Ω tf ns Drain-Source Body Diode Characteristics Source-Drain Diode Forward Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr IS = 1A, VGS = 0V IF = 7.5A, di/dt = 100A/µs V Note : 1. Surface mounted FR-4 board with 2oz. Copper. 2. Starting TJ = 25°C, L = 1mH, IAS = 5A, VDD = 15V, VGS = 10V March. 2009. Version 0.0 2 MagnaChip Semiconductor Ltd. MDS5652 – Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ Ordering Information 40 6.0V 5.0V 7.0V 45 4.5V 8.0V 40 10V 35 30 ID [A] RDS(ON) [mΩ ] 4.0V 30 25 20 3.5V VGS=4.5V 20 15 VGS=10V 10 VGS=3.0V 5 10 0 0 1 2 3 4 0 5 5 10 15 20 ID [A] VDS [V] Fig.2 On-Resistance Variation with Drain Current and Gate Voltage Fig.1 On-Region Characteristics 50 1.8 1.6 40 1.4 RDS(ON) [mΩ ] RDS(ON), (Normalized) Drain-Source On-Resistance [mΩ ] *Note ; ID = 7.5A VGS=4.5V ID=5.0A VGS=10V ID=7.5A 1.2 30 125℃ 1.0 20 25℃ 0.8 0.6 -50 10 -25 0 25 50 75 100 125 2 150 4 6 8 10 VGS [V] o TJ, Junction Temperature [ C] Fig.3 On-Resistance Variation with Temperature Fig.4 On-Resistance Variation with Gate to Source Voltage 10 20 *Note ; VDS=5.0V 1 15 0.1 -IS [A] ID [A] 0.01 10 125℃ 5 1E-3 1E-4 125℃ 25℃ 25℃ 1E-5 0 0 1 2 3 4 1E-6 0.0 5 VGS [V] 0.4 0.6 0.8 1.0 -VSD [V] Fig.5 Transfer Characteristics March. 2009. Version 0.0 0.2 Fig.6 Body Diode Forward Voltage Variation with Source Current and Temperature 3 MagnaChip Semiconductor Ltd. MDS5652 – Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ 50 900 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd *Note ; ID = 7.5A 800 8 Capacitance [pF] 700 VGS [V] 6 4 600 Ciss 500 400 Coss 300 * Notes ; 1. VGS = 0 V 2. f = 1 MHz 200 2 Crss 100 0 0 2 4 6 8 10 0 12 0 5 10 15 Qg [nC] Fig.7 Gate Charge Characteristics 10 2 10 1 20 25 30 VDS [V] Fig.8 Capacitance Characteristics 8 10 Operation in This Area is Limited by R DS(on) 0 1 ms 6 10 ms 5 ID [A] ID [A] 7 100 ms 1s 10 3 10s -1 2 DC Single Pulse Rθ ja=62.5℃/W Ta=25℃ 10 1 -2 10 4 -1 10 0 10 1 10 0 25 2 50 75 100 125 150 T a [℃ ] VDS [V] Fig.10 Maximum Drain Current Vs. Ambient Temperature Fig.9 Maximum Safe Operating Area Zθ ja, Normalized Thermal Response [t] 1 10 0 10 D=0.5 0.2 0.1 -1 10 ※ Notes : Duty Factor, D=t1/t2 PEAK TJ = PDM * Zθ Ja* Rθ Ja(t) + Ta RΘ JA=62.5℃/W 0.05 0.02 -2 0.01 10 -3 10 single pulse -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 2 10 3 10 t1, Rectangular Pulse Duration [sec] Fig.11 Transient Thermal Response Curve March. 2009. Version 0.0 4 MagnaChip Semiconductor Ltd. MDS5652 – Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ 10 8 Leads, SOIC Dimensions are in millimeters unless otherwise specified March. 2009. Version 0.0 5 MagnaChip Semiconductor Ltd. MDS5652 – Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ Physical Dimensions U.S.A Sunnyvale Office 787 N. 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MagnaChip does not consider responsibility for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip Semiconductor Ltd. March. 2009. Version 0.0 6 MagnaChip Semiconductor Ltd. MDS5652 – Dual N-Channel Trench MOSFET, 30V, 7.5A, 22mΩ Worldwide Sales Support Locations