NCP716 80 mA Ultra-Low Iq, Wide Input Voltage Low Dropout Regulator The NCP716 is 80 mA LDO Linear Voltage Regulator. It is a very stable and accurate device with ultra−low ground current consumption (4.7 mA over the full output load range) and a wide input voltage range (up to 24 V). The regulator incorporates several protection features such as Thermal Shutdown and Current Limiting. Features MARKING DIAGRAMS 1 WDFN6 CASE 511BR • Operating Input Voltage Range: 2.5 V to 24 V • Fixed Voltage Options Available: • • • • • • • http://onsemi.com 1.2 V to 5.0 V Ultra Low Quiescent Current: Max. 4.7 mA over Temperature ±2% Accuracy over Full Load, Line and Temperature Variations PSRR: 60 dB at 100 kHz Noise: 200 mVRMS from 200 Hz to 100 kHz Thermal Shutdown and Current Limit Protection Available in WDFN6, 2x2x0.8 mm Package This is a Pb−Free Device Typical Applicaitons XX M XX = Specific Device Code M = Date Code PIN CONNECTIONS 1 2 3 6 EXP 5 4 WDFN6 2x2 mm (Top View) • Portable Equipment • Communication Systems ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 16 of this data sheet. Figure 1. Typical Application Schematic © Semiconductor Components Industries, LLC, 2014 January, 2014 − Rev. 1 1 Publication Order Number: NCP716/D NCP716 IN UVLO BANDGAP REFERENCE THERMAL SHUTDOWN MOSFET DRIVER WITH CURRENT LIMIT OUT EEPROM GND Figure 2. Simplified Block Diagram Table 1. PIN FUNCTION DESCRIPTION Pin No. wDFN6, 2 x 2 Pin Name 6 OUT Regulated output voltage pin. A small 0.47 mF ceramic capacitor is needed from this pin to ground to assure stability. Description 2 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 3, EXP GND Power supply ground. Exposed pad EXP must be tied with GND pin 3. 4 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 5 N/C No connection. This pin can be tied to ground to improve thermal dissipation or left disconnected. 1 IN Input pin. A small capacitor is needed from this pin to ground to assure stability. Table 2. ABSOLUTE MAXIMUM RATINGS Rating Input Voltage (Note 1) Symbol Value Unit VIN −0.3 to 24 V VOUT −0.3 to 5 V tSC Indefinite s TJ(MAX) 150 °C TSTG −55 to 150 °C ESD Capability, Human Body Model (Note 2) ESDHBM 2000 V ESD Capability, Machine Model (Note 2) ESDMM 200 V Output Voltage Output Short Circuit Duration Maximum Junction Temperature Storage Temperature Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Refer to ELECTRICAL CHARACTERISTICS and APPLICATION INFORMATION for Safe Operating Area. 2. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (EIA/JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (EIA/JESD22−A115) Latch up Current Maximum Rating tested per JEDEC standard: JESD78 Table 3. THERMAL CHARACTERISTICS Rating Thermal Characteristics, wDFN6, 2 mm x 2 mm Thermal Resistance, Junction−to−Air Symbol Value Unit RqJA 120 °C/W http://onsemi.com 2 NCP716 Table 4. ELECTRICAL CHARACTERISTICS Voltage version 1.2 V −40°C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 5) Parameter Operating Input Voltage Test Conditions Symbol Min Max Unit IOUT ≤ 10 mA VIN 2.5 24 V 3.0 24 10 mA < IOUT < 80 mA Output Voltage Accuracy 3.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT Line Regulation 3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 30 mV Load Regulation IOUT = 0 mA to 80 mA RegLOAD 20 mV (Note 6) IOUT 0 < IOUT < 80 mA, −40 < TA < 85°C IGND Dropout voltage (Note 3) Maximum Output Current Ground current 1.164 Typ 1.2 VDO − 110 Output Noise Voltage Thermal Shutdown Temperature (Note 4) Thermal Shutdown Hysteresis (Note 4) VIN = 3.0 V, VOUT = 1.2 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz VOUT = 1.2 V, IOUT = 80 mA f = 200 Hz to 100 kHz V mV mA 3.2 0 < IOUT < 80 mA, VIN = 24 V Power Supply Rejection Ratio 1.236 4.2 mA 5.8 mA PSRR 63 dB VN 105 mVrms Temperature increasing from TJ = +25°C TSD Temperature falling from TSD TSDH 155 − 25 °C − °C 3. Not Characterized at VIN = 3.0 V, VOUT = 1.2 V, IOUT = 80 mA 4. Guaranteed by design and characterization. 5. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 6. Respect SOA http://onsemi.com 3 NCP716 Table 5. ELECTRICAL CHARACTERISTICS Voltage version 1.5 V −40°C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 9) Parameter Operating Input Voltage Test Conditions Symbol Min Max Unit IOUT ≤ 10 mA VIN 2.5 24 V 3.0 24 10 mA < IOUT < 80 mA Output Voltage Accuracy 1.455 Typ 3.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 1.5 1.545 V Line Regulation 3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 20 mV Load Regulation IOUT = 0 mA to 80 mA RegLOAD 20 mV (Note 10) IOUT 0 < IOUT < 80 mA, −40 < TA < 85°C IGND Dropout voltage (Note 7) Maximum Output Current Ground current 110 mA 3.2 0 < IOUT < 80 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 8) Thermal Shutdown Hysteresis (Note 8) VIN = 3.0 V, VOUT = 1.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz VOUT = 1.5 V, IOUT = 80 mA f = 200 Hz to 100 kHz 4.2 mA 5.8 mA PSRR 60 dB VN 120 mVrms Temperature increasing from TJ = +25°C TSD Temperature falling from TSD TSDH 155 − 25 °C − °C 7. Not Characterized at VIN = 3.0 V, VOUT = 1.5 V, IOUT = 80 mA 8. Guaranteed by design and characterization. 9. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 10. Respect SOA http://onsemi.com 4 NCP716 Table 6. ELECTRICAL CHARACTERISTICS Voltage version 1.8 V −40°C ≤ TJ ≤ 125°C; VIN = 3.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 13) Parameter Operating Input Voltage Test Conditions Symbol Min Max Unit IOUT ≤ 10 mA VIN 2.8 24 V 3.0 24 10 mA < IOUT < 80 mA Output Voltage Accuracy 1.746 Typ 3.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 1.8 1.854 V Line Regulation 3.0 V ≤ VIN ≤ 24 V, IOUT = 1 mA RegLINE 15 mV Load Regulation IOUT = 0 mA to 80 mA RegLOAD 15 mV (Note 14) IOUT 0 < IOUT < 80 mA, −40 < TA < 85°C IGND Dropout voltage (Note 11) Maximum Output Current Ground current 110 mA 3.2 0 < IOUT < 80 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 12) Thermal Shutdown Hysteresis (Note 12) VIN = 3.0 V, VOUT = 1.8 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz VOUT = 1.8 V, IOUT = 80 mA f = 200 Hz to 100 kHz 4.2 mA 5.8 mA PSRR 60 dB VN 140 mVrms Temperature increasing from TJ = +25°C TSD Temperature falling from TSD TSDH 155 − 25 °C − °C 11. Not Characterized at VIN = 3.0 V, VOUT = 1.8 V, IOUT = 80 mA 12. Guaranteed by design and characterization. 13. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 14. Respect SOA http://onsemi.com 5 NCP716 Table 7. ELECTRICAL CHARACTERISTICS Voltage version 2.5 V −40°C ≤ TJ ≤ 125°C; VIN = 3.5 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 17) Parameter Test Conditions Symbol Min 0 < IOUT < 80 mA VIN 3.5 Output Voltage Accuracy 3.5 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 2.45 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1mA RegLINE 15 mV Load Regulation IOUT = 0 mA to 80 mA RegLOAD 15 mV Dropout voltage (Note 15) VDO = VIN – (VOUT(NOM) – 75 mV) IOUT = 80 mA VDO Maximum Output Current (Note 18) IOUT 0 < IOUT < 80 mA, −40 < TA < 85°C IGND Operating Input Voltage Ground current Typ 2.5 400 Output Noise Voltage Thermal Shutdown Temperature (Note 16) Thermal Shutdown Hysteresis (Note 16) VIN = 3.5 V, VOUT = 2.5 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz Unit 24 V 2.55 V 640 110 mV mA 3.2 0 < IOUT < 80 mA, VIN = 24 V Power Supply Rejection Ratio Max 4.2 mA 5.8 mA PSRR 60 dB VOUT = 2.5 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 160 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH − 25 − °C 15. Characterized when VOUT falls 75 mV below the regulated voltage and only for devices with VOUT = 2.5 V 16. Guaranteed by design and characterization. 17. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 18. Respect SOA http://onsemi.com 6 NCP716 Table 8. ELECTRICAL CHARACTERISTICS Voltage version 3.0 V −40°C ≤ TJ ≤ 125°C; VIN = 4.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 21) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 80 mA VIN 4.0 Output Voltage Accuracy 4.3 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 2.94 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Max Unit 24 V 3.0 3.06 V RegLINE 4 10 mV IOUT = 0 mA to 80 mA RegLOAD 10 30 mV Dropout voltage (Note 19) VDO = VIN – (VOUT(NOM) – 90 mV) IOUT = 80 mA VDO 580 mV Maximum Output Current (Note 22) IOUT 0 < IOUT < 80 mA, −40 < TA < 85°C IGND Ground current Typ 370 110 mA 3.2 0 < IOUT < 80 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 20) Thermal Shutdown Hysteresis (Note 20) VIN = 4.3 V, VOUT = 3.3 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz 4.2 mA 5.8 mA PSRR 58 dB VOUT = 4.3 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 190 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH − 25 − °C 19. Characterized when VOUT falls 90 mV below the regulated voltage and only for devices with VOUT = 3.0 V 20. Guaranteed by design and characterization. 21. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 22. Respect SOA http://onsemi.com 7 NCP716 Table 9. ELECTRICAL CHARACTERISTICS Voltage version 3.3 V −40°C ≤ TJ ≤ 125°C; VIN = 4.3 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 25) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 80 mA VIN 4.3 Output Voltage Accuracy 4.3 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 3.234 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Max Unit 24 V 3.3 3.366 V RegLINE 4 10 mV IOUT = 0 mA to 80 mA RegLOAD 10 30 mV Dropout voltage (Note 23) VDO = VIN – (VOUT(NOM) – 99 mV) IOUT = 80 mA VDO 560 mV Maximum Output Current (Note 26) IOUT 0 < IOUT < 80 mA, −40 < TA < 85°C IGND Ground current Typ 350 110 mA 3.2 0 < IOUT < 80 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 24) Thermal Shutdown Hysteresis (Note 24) VIN = 4.3 V, VOUT = 3.3 V VPP = 200 mV modulation IOUT = 1 mA, COUT = 10 mF f = 100 kHz 4.2 mA 5.8 mA PSRR 60 dB VOUT = 4.3 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 200 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH − 25 − °C 23. Characterized when VOUT falls 99 mV below the regulated voltage and only for devices with VOUT = 3.3 V 24. Guaranteed by design and characterization. 25. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 26. Respect SOA http://onsemi.com 8 NCP716 Table 10. ELECTRICAL CHARACTERISTICS Voltage version 5.0 V −40°C ≤ TJ ≤ 125°C; VIN = 6.0 V; IOUT = 1 mA, CIN = COUT = 1.0 mF, unless otherwise noted. Typical values are at TJ = +25°C. (Note 29) Parameter Test Conditions Symbol Min Operating Input Voltage 0 < IOUT < 80 mA VIN 6.0 Output Voltage Accuracy 6.0 V < VIN < 24 V, 0 < IOUT < 80 mA VOUT 4.9 Line Regulation VOUT + 1 V ≤ VIN ≤ 24 V, IOUT = 1 mA Load Regulation Max Unit 24 V 5.0 5.1 V RegLINE 4 10 mV IOUT = 0 mA to 80 mA RegLOAD 10 30 mV Dropout voltage (Note 27) VDO = VIN – (VOUT(NOM) – 150 mV) IOUT = 80 mA VDO 500 mV Maximum Output Current (Note 30) IOUT 0 < IOUT < 80 mA, −40 < TA < 85°C IGND Ground current Typ 310 110 mA 3.2 0 < IOUT < 80 mA, VIN = 24 V Power Supply Rejection Ratio Output Noise Voltage Thermal Shutdown Temperature (Note 28) Thermal Shutdown Hysteresis (Note 28) VIN = 6.0 V, VOUT = 5.0 V VPP = 200 mV modulation IOUT = 1 mA, COUT =10 mF f = 100 kHz 4.2 mA 5.8 mA PSRR 54 dB VOUT = 5.0 V, IOUT = 80 mA f = 200 Hz to 100 kHz VN 220 mVrms Temperature increasing from TJ = +25°C TSD 155 °C Temperature falling from TSD TSDH − 25 − °C 27. Characterized when VOUT falls 150 mV below the regulated voltage and only for devices with VOUT = 5.0 V 28. Guaranteed by design and characterization. 29. Performance guaranteed over the indicated operating temperature range by design and/or characterization production tested at TJ = TA = 25°C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible. 30. Respect SOA http://onsemi.com 9 NCP716 TYPICAL CHARACTERISTICS 1.220 2.514 IOUT = 1 mA CIN = COUT = 1 mF 2.510 OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 1.215 1.210 VIN = 2.5 V 1.205 VIN = (5 V − 24 V) 1.200 1.195 0 20 40 60 80 VIN = (5 V − 24 V) 2.502 2.498 2.490 −40 −20 120 100 0 20 4.995 VIN = (4.3 V − 24 V) 3.300 3.296 3.292 IOUT = 1 mA CIN = COUT = 1 mF 3.288 3.284 −40 −20 120 0 20 40 IOUT = 1 mA CIN = COUT = 1 mF VIN = (8 V − 24 V) 4.985 VIN = 6.0 V 4.975 4.965 4.955 60 80 100 4.945 −40 −20 120 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 5. NCP716x33xxx Output Voltage vs. Temperature Figure 6. NCP716x50xxx Output Voltage vs. Temperature 1.214 2.52 1.210 VIN = 3.0 V 24 V 10 V 15 V 4.0 V 5.0 V 1.202 1.198 TA = 25°C CIN = COUT = 1 mF 10 20 20 V 2.51 OUTPUT VOLTAGE (V) 20 V OUTPUT VOLTAGE (V) 100 Figure 4. NCP716x25xxx Output Voltage vs. Temperature 3.304 0 80 Figure 3. NCP716x12xxx Output Voltage vs. Temperature 5.005 1.194 60 TEMPERATURE (°C) 3.308 1.206 40 TEMPERATURE (°C) OUTPUT VOLTAGE (V) OUTPUT VOLTAGE (V) 2.506 2.494 1.190 −40 −20 1.190 IOUT = 1 mA CIN = COUT = 1 mF VIN = 3.5 V VIN = 3.5 V 40 50 60 70 5.0 V 2.49 2.48 2.46 80 15 V 2.50 TA = 25°C CIN = COUT = 1 mF 2.47 30 24 V 10 V 0 10 20 30 40 50 60 70 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 7. NCP716x12xxx Output Voltage vs. Output Current Figure 8. NCP716x25xxx Output Voltage vs. Output Current http://onsemi.com 10 80 NCP716 5.000 3.300 4.995 3.296 VIN = 4.3 V 5.0 V 3.292 3.288 10 V 0 10 20 15 V 20 V TA = 25°C CIN = COUT = 1 mF 3.284 3.280 30 40 50 60 70 4.985 8.0 V 15 V 0 10 20 30 40 50 60 Figure 9. NCP7163V3 Output Voltage vs. Output Current Figure 10. NCP716x50xxx Output Voltage vs. Output Current 0.6 TA = 25°C TA = −40°C 0.2 0.1 10 20 30 40 50 60 70 80 70 OUTPUT CURRENT (mA) 0.5 TA = 125°C CIN = COUT = 1 mF 0.4 TA = 25°C 0.3 0.2 TA = −40°C 0.1 0 80 0 10 20 30 40 50 60 80 70 OUTPUT CURRENT (mA) OUTPUT CURRENT (mA) Figure 11. NCP716x25xxx Dropout Voltage vs. Output Current Figure 12. NCP716x33xxx Dropout Voltage vs. Output Current 0.6 30 CIN = COUT = 1 mF 0.5 QUIESCENT CURRENT (mA) DROPOUT VOLTAGE (V) 20 V 24 V OUTPUT CURRENT (mA) 0.3 TA = 125°C 0.4 TA = 25°C 0.3 0.2 TA = −40°C 0.1 0 10 V 4.980 4.970 80 CIN = COUT = 1 mF 0 VIN = 6.0 V 24 V 0.4 0 4.990 TA = 125°C 0.5 TA = 25°C CIN = COUT = 1 mF 4.975 0.6 DROPOUT VOLTAGE (V) OUTPUT VOLTAGE (V) 3.304 DROPOUT VOLTAGE (V) OUTPUT VOLTAGE (V) TYPICAL CHARACTERISTICS 0 10 20 30 40 50 60 70 20 15 10 IOUT = 80 mA 5 0 80 TA = 25°C CIN = COUT = 1 mF 25 IOUT = 0 0 5 10 15 20 25 OUTPUT CURRENT (mA) INPUT VOLTAGE (V) Figure 13. NCP716x50xxx Dropout Voltage vs. Output Current Figure 14. NCP716x12xxx Ground Current vs. Input Voltage http://onsemi.com 11 NCP716 TYPICAL CHARACTERISTICS 40 TA = 25°C CIN = COUT = 1 mF 25 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) 30 20 15 10 IOUT = 80 mA 5 0 IOUT = 0 0 5 10 15 20 15 10 IOUT = 80 mA 5 IOUT = 0 0 5 10 15 20 25 Figure 15. NCP716x25xxx Ground Current vs. Input Voltage Figure 16. NCP716x50xxx Ground Current vs. Input Voltage 5.5 TA = 25°C CIN = COUT = 1 mF 25 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) 20 INPUT VOLTAGE (V) 20 15 10 IOUT = 80 mA 5 IOUT = 0 0 5 10 15 20 5.0 IOUT = 0 CIN = COUT = 1 mF 4.5 VIN = 24 V 4.0 VIN = 10 V 3.5 VIN = 3.0 V 3.0 2.5 −40 −20 25 0 20 40 60 80 100 120 INPUT VOLTAGE (V) TEMPERATURE (°C) Figure 17. NCP716x33xxx Ground Current vs. Input Voltage Figure 18. NCP716x12xxx Quiescent Current vs. Temperature 5.5 5.5 IOUT = 0 CIN = COUT = 1 mF 5.0 4.5 QUIESCENT CURRENT (mA) QUIESCENT CURRENT (mA) 25 INPUT VOLTAGE (V) 30 0 30 0 25 TA = 25°C CIN = COUT = 1 mF 35 VIN = 24 V 4.0 VIN = 10 V 3.5 VIN = 3.5 V 3.0 2.5 −40 −20 0 20 40 60 80 100 5.0 IOUT = 0 CIN = COUT = 1 mF 4.5 VIN = 24 V 4.0 VIN = 10 V 3.5 VIN = 4.3 V 3.0 2.5 −40 −20 120 0 20 40 60 80 100 120 TEMPERATURE (°C) TEMPERATURE (°C) Figure 19. NCP716x25xxx Quiescent Current vs. Temperature Figure 20. NCP716x33xxx Quiescent Current vs. Temperature http://onsemi.com 12 NCP716 TYPICAL CHARACTERISTICS 100 IOUT = 0 CIN = COUT = 1 mF 5.0 VIN = 24 V 4.5 4.0 VIN = 10 V 3.5 VIN = 6.0 V IOUT = 10 mA 60 40 IOUT = 80 mA 20 3.0 2.5 −40 −20 0 20 40 60 80 100 0 120 0.1 1 10 100 1000 TEMPERATURE (°C) FREQUENCY (kHz) Figure 21. NVP716x50xxx Quiescent Current vs. Temperature Figure 22. NCP716x12xxx PSRR vs. Frequency 100 100 VIN = 3.5 V + 200 mVpp modulation COUT = 10 mF TA = 25°C IOUT = 1 mA 60 40 60 IOUT = 1 mA 40 IOUT = 10 mA IOUT = 80 mA IOUT = 80 mA 20 VIN = 4.3 V + 200 mVpp modulation COUT = 10 mF TA = 25°C 80 PSRR (dB) 80 PSRR (dB) VIN = 3.0 V + 200 mVpp modulation COUT = 10 mF TA = 25°C IOUT = 1 mA 80 PSRR (dB) QUIESCENT CURRENT (mA) 5.5 20 IOUT = 10 mA 0 0.1 1 10 100 0 1000 1 10 1000 FREQUENCY (kHz) Figure 23. NCP716x25xxx PSRR vs. Frequency Figure 24. NCP716x33xxx PSRR vs. Frequency 1.6 VIN = 6.0 V + 200 mVpp modulation COUT = 10 mF TA = 25°C 60 1.2 IOUT = 1 mA IOUT = 10 mA 40 1.0 0.8 0.6 0.4 IOUT = 80 mA 20 IOUT = 80 mA TA = 25°C VIN = 3.0 V 1.4 mV/sqrt (Hz) 80 COUT = 4.7 mF 0.2 0 100 FREQUENCY (kHz) 100 PSRR (dB) 0.1 0.1 1 10 100 1000 0 0.01 COUT = 10 mF 0.1 1 10 100 1000 FREQUENCY (kHz) FREQUENCY (kHz) Figure 25. NCP716x50xxx PSRR vs. Frequency Figure 26. NCP716x12xxx Output Spectral Noise Density vs. Frequency http://onsemi.com 13 NCP716 TYPICAL CHARACTERISTICS 4.0 5.0 4.0 3.5 2.5 mV/sqrt (Hz) mV/sqrt (Hz) 3.0 2.0 1.5 3.0 2.5 2.0 1.5 1.0 COUT = 4.7 mF 0.5 0 IOUT = 80 mA TA = 25°C VIN = 4.3 V 4.5 IOUT = 80 mA TA = 25°C VIN = 3.5 V 3.5 1.0 COUT = 10 mF 0.01 0.1 1 10 100 1000 0.5 0 COUT = 4.7 mF COUT = 10 mF 0.01 0.1 1 10 100 FREQUENCY (kHz) FREQUENCY (kHz) Figure 27. NCP716x25xxx Output Spectral Noise Density vs. Frequency Figure 28. NCP716x33xxx Output Spectral Noise Density vs. Frequency 8 IOUT = 80 mA TA = 25°C VIN = 6.0 V 7 mV/sqrt (Hz) 6 5 4 3 2 COUT = 4.7 mF 1 0 1000 COUT = 10 mF 0.01 0.1 1 10 100 1000 FREQUENCY (kHz) Figure 29. NCP716x50xxx Output Spectral Noise Density vs. Frequency Figure 30. Load Transient Response Figure 31. Load Transient Response Figure 32. Load Transient Response http://onsemi.com 14 NCP716 TYPICAL CHARACTERISTICS Figure 33. Load Transient Response Figure 34. Line Transient Response Figure 35. Line Transient Response Figure 36. Line Transient Response Figure 37. Line Transient Response http://onsemi.com 15 NCP716 APPLICATIONS INFORMATION Power Dissipation and Heat sinking The NCP716 is the member of new family of Wide Input Voltage Range Low Dropout Regulators which delivers Ultra Low Ground Current consumption, Good Noise and Power Supply Rejection Ratio Performance. The maximum power dissipation supported by the device is dependent upon board design and layout. Mounting pad configuration on the PCB, the board material, and the ambient temperature affect the rate of junction temperature rise for the part. The maximum power dissipation the NCP716 can handle is given by: Input Decoupling (CIN) It is recommended to connect at least 0.1 mF Ceramic X5R or X7R capacitor between IN and GND pin of the device. This capacitor will provide a low impedance path for any unwanted AC signals or Noise superimposed onto constant Input Voltage. The good input capacitor will limit the influence of input trace inductances and source resistance during sudden load current changes. Higher capacitance and lower ESR Capacitors will improve the overall line transient response. P D(MAX) + ƪTJ(MAX) * TAƫ (eq. 1) R qJA The power dissipated by the NCP716 for given application conditions can be calculated from the following equations: P D [ V INǒI GND(I OUT)Ǔ ) I OUTǒV IN * V OUTǓ (eq. 2) or Output Decoupling (COUT) The NCP716 does not require a minimum Equivalent Series Resistance (ESR) for the output capacitor. The device is designed to be stable with standard ceramics capacitors with values of 0.47 mF or greater up to 10 mF. The X5R and X7R types have the lowest capacitance variations over temperature thus they are recommended. V IN(MAX) [ P D(MAX) ) ǒV OUT I OUTǓ I OUT ) I GND (eq. 3) Hints VIN and GND printed circuit board traces should be as wide as possible. When the impedance of these traces is high, there is a chance to pick up noise or cause the regulator to malfunction. Place external components, especially the output capacitor, as close as possible to the NCP716, and make traces as short as possible. ORDERING INFORMATION Device Voltage Option Marking NCP716MT12TBG 1.2 V 6A NCP716MT15TG 1.5 V 6C NCP716MT18TBG 1.8 V 6D NCP716MT25TBG 2.5 V 6E NCP716MT30TBG 3.0 V 6F NCP716MT33TBG 3.3 V 6G NCP716MT50TBG 5.0 V 6H Package Shipping† WDFN6 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 16 NCP716 PACKAGE DIMENSIONS WDFN6 2x2, 0.65P CASE 511BR ISSUE O D ÍÍÍ ÍÍÍ ÍÍÍ PIN ONE REFERENCE 0.10 C 0.10 C EXPOSED Cu NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. MOLD CMPD DETAIL B ALTERNATE CONSTRUCTIONS E DIM A A1 A3 b D D2 E E2 e L L1 L L L1 TOP VIEW DETAIL A ALTERNATE CONSTRUCTIONS A3 DETAIL B 0.05 C ÇÇ ÇÇ ÉÉ A B MILLIMETERS MIN MAX 0.70 0.80 0.00 0.05 0.20 REF 0.25 0.35 2.00 BSC 1.50 1.70 2.00 BSC 0.90 1.10 0.65 BSC 0.40 0.20 --0.15 A 6X 0.05 C A1 NOTE 4 C SIDE VIEW D2 DETAIL A 1 3 RECOMMENDED MOUNTING FOOTPRINT* SEATING PLANE 1.72 L 1.12 E2 6 4 6X 0.45 6X PACKAGE OUTLINE b e BOTTOM VIEW 0.10 M C A 0.05 M C B 6X 2.30 1 0.40 NOTE 3 0.65 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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