DMN6075S 60V N-CHANNEL ENHANCEMENT MODE MOSFET Summary Features and Benefits Description This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, Mechanical Data RDS(ON) Max ID Max TA = +25°C 85mΩ @ VGS = 10V 2.5A 120mΩ @ VGS = 4.5V 2.0A BVDSS ADVANCE INFORMATION 60V making it ideal for high efficiency power management applications. Applications DC-DC Converters Power Management Functions Backlighting N MOSFET Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Case: SOT23 Case Material: Molded Plastic, “Green” Molding Compound; UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e3 Weight: 0.008 grams (Approximate) D SOT23 D G S G S Top View Top View Pin Configuration Top View Ordering Information (Note 4) Notes: Product Reel Size (inches) Tape Width (mm) Quantity per Reel DMN6075S-7 DMN6075S-13 7 13 8 8 3,000 10,000 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information SOT23 S67 = Product Type Marking Code YM = Date Code Marking Y or = Year (ex: E = 2017) M = Month (ex: 9 = September) Date Code Key Year 2014 Code B Month Code ~ ~ Jan 1 2017 E Feb 2 DMN6075S Document number: DS37023 Rev. 5 - 2 Mar 3 2018 F Apr 4 2019 G May 5 2020 H Jun 6 1 of 7 www.diodes.com 2021 I Jul 7 2022 J Aug 8 2023 K Sep 9 Oct O 2024 L 2025 M Nov N Dec D March 2017 © Diodes Incorporated DMN6075S Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic ADVANCE INFORMATION Symbol Value Unit Drain-Source Voltage VDSS 60 V Gate-Source Voltage VGSS ±20 V A Continuous Drain Current (Note 5) VGS = 10V Steady State TA = +25°C TA = +70°C ID 2.0 1.5 Continuous Drain Current (Note 6) VGS = 10V Steady State TA = +25°C TA = +70°C ID 2.5 2.0 A IDM 12 A Value Unit Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Symbol TA = +25°C Total Power Dissipation (Note 5) Steady State Steady State Thermal Resistance, Junction to Ambient (Note 6) Operating and Storage Temperature Range 157 °C/W 1.15 PD TA = +70°C W 0.5 RJA TA = +25°C Total Power Dissipation (Note 6) Electrical Characteristics PD TA = +70°C Thermal Resistance, Junction to Ambient (Note 5) 0.8 W 0.7 RJA 110 °C/W TJ, TSTG -55 to +150 °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 7) Symbol Min Typ Max Unit Test Condition BVDSS 60 — — V VGS = 0V, ID = 250μA Zero Gate Voltage Drain Current TJ = +25°C IDSS — — 1.0 µA VDS = 60V, VGS = 0V Gate-Source Leakage IGSS — — ±100 nA VGS = ±16V, VDS = 0V VGS(TH) 1 — 3 V VDS = VGS, ID = 250μA 69 85 75 120 — 1.2 V Drain-Source Breakdown Voltage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage RDS(ON) — VSD — Input Capacitance Ciss — 606 — pF Output Capacitance Coss — 32.6 — pF Reverse Transfer Capacitance Crss — 24.6 — pF Gate Resistance Rg — 1.5 — Ω Total Gate Charge (VGS = 10V) Qg — 12.3 — nC Total Gate Charge (VGS = 4.5V) Qg — 5.6 — nC Gate-Source Charge Qgs — 1.7 — nC Gate-Drain Charge Qgd — 1.9 — nC Turn-On Delay Time tD(ON) — 3.5 — ns Turn-On Rise Time tR — 4.1 — ns Turn-Off Delay Time tD(OFF) — 35 — ns tF — 11 — ns Static Drain-Source On-Resistance Diode Forward Voltage mΩ VGS = 10V, ID = 3.2A VGS = 4.5V, ID = 2.8A VGS = 0V, IS = 2.5A DYNAMIC CHARACTERISTICS (Note 8) Turn-Off Fall Time Notes: VDS = 20V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = 30V, ID = 3A VGS = 10V, VDS = 30V, Rg = 20Ω, RL = 50Ω 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. DMN6075S Document number: DS37023 Rev. 5 - 2 2 of 7 www.diodes.com March 2017 © Diodes Incorporated DMN6075S ID, DRAIN CURRENT (A) 12.0 VGS = 4.0V VDS = 5.0V 8 VGS = 3.5V VGS =5.0V )A ( T N E R R U C N I A R D ,D I 9.0 6.0 VGS = 3.0V 6 TA = 150°C 4 T A = 125°C 3.0 TA = -55°C ) ( E C N A T S IS E R -N O E C R U O S -N IA R D , )N 0 1 2 3 4 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristics RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.15 0.12 VGS = 4.5V 0.09 VGS = 10V 0.06 0.03 0 0 0 5 3 6 9 12 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 15 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 VGS , GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristics 5 0.2 ID = 3.2A 0.18 0.16 ID = 2.8A 0.14 0.12 0.1 0.08 0.06 0.04 2 4 6 8 10 12 14 16 18 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristics 20 2.4 0.2 VGS = 10V TA = 150°C 0.15 TA = 125°C TA = 85°C 0.1 TA = 25°C 0.05 TA = -55°C RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.0 TA = 85°C TA = 25°C 2 VGS = 2.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION 10 VGS = 10V ID, DRAIN CURRENT (A) 15.0 VGS = 10V ID = 5A 2 1.6 VGS = 4.5V ID = 3A 1.2 0.8 O (S D R 0.4 -50 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 6 On-Resistance Variation with Temperature ID , DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature DMN6075S Document number: DS37023 Rev. 5 - 2 3 of 7 www.diodes.com March 2017 © Diodes Incorporated 2.5 0.18 0.04 )V ( E G A T 2 L O V D L O H S 1.5 E R H T E T A G 1 , )h 0.02 V VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.2 0.16 VGS = 4.5V ID = 3A 0.14 0.12 0.1 VGS = 10V ID = 5A 0.08 0.06 ID = 1mA ID = 250µA t( S G 0.5 -50 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (C) Figure 7 On-Resistance Variation with Temperature -25 0 25 50 75 100 125 150 TJ , JUNCTION TEMPERATURE ( C) Figure 8 Gate Threshold Variation vs. Junction Temperature 10000 10 IS, SOURCE CURRENT (A) )A ( T N E R R U C E C R U O S ,S I C T, JUNCTION CAPACITANCE (pF) f = 1MHz 8 6 TA = 150°C TA = 25°C TA =125°C 4 TA = -55°C TA =85°C 2 0 0 0.3 0.6 0.9 1.2 1000 100 Coss Crss 10 1 1.5 Ciss 0 VSD , SOURCE-DRAIN VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current 10 40 RDS(ON) Limited 9 8 10 )A ( T N E R R U C N IA R D ,D I 7 6 VDS = 30V ID = 3A 5 4 3 2 1 2 4 6 8 10 12 Qg, TOTAL GATE CHARGE (nC) Figure 11 Gate Charge DMN6075S Document number: DS37023 Rev. 5 - 2 14 DC PW = 10s PW = 1s 0.1 PW= 100ms PW = 10ms 0.01 1 00 10 20 30 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10 Typical Junction Capacitance 100 ID, DRAIN CURRENT (A) VGS GATE THRESHOLD VOLTAGE (V) ADVANCE INFORMATION DMN6075S 0.001 0.1 4 of 7 www.diodes.com TJ(MAX)= 150°C TA = 25°C VGS = 10V Single Pulse DUT on 1 * MRP Board PW = 1ms PW = 100µs 1 10 VDS , DRAIN-SOURCE VOLTAGE (V) Figure 12 SOA, Safe Operation Area 100 March 2017 © Diodes Incorporated DMN6075S r(t), TRANSIENT THERMAL RESISTANCE 1 ADVANCE INFORMATION E C N A T S I S E R L A M R E H T T N E I S N A R T ,) t( r D = 0.9 D = 0.7 D = 0.5 D = 0.3 0.1 D = 0.1 D = 0.05 D = 0.02 0.01 D = 0.01 D = 0.005 RJA(t) = r(t) * RJA RJA = 152°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13 Transient Thermal Resistance DMN6075S Document number: DS37023 Rev. 5 - 2 5 of 7 www.diodes.com March 2017 © Diodes Incorporated DMN6075S Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 All 7° ADVANCE INFORMATION H K1 GAUGE PLANE 0.25 J K a M A L C L1 B D G F SOT23 Dim Min Max Typ A 0.37 0.51 0.40 B 1.20 1.40 1.30 C 2.30 2.50 2.40 D 0.89 1.03 0.915 F 0.45 0.60 0.535 G 1.78 2.05 1.83 H 2.80 3.00 2.90 J 0.013 0.10 0.05 K 0.890 1.00 0.975 K1 0.903 1.10 1.025 L 0.45 0.61 0.55 L1 0.25 0.55 0.40 M 0.085 0.150 0.110 a 0° 8° -All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. SOT23 Y C Y1 X DMN6075S Document number: DS37023 Rev. 5 - 2 Dimensions C X X1 Y Y1 Value (in mm) 2.0 0.8 1.35 0.9 2.9 X1 6 of 7 www.diodes.com March 2017 © Diodes Incorporated DMN6075S IMPORTANT NOTICE ADVANCE INFORMATION DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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