NTD5804N, NTDV5804N, SVD5804N Power MOSFET 40 V, 69 A, Single N−Channel, DPAK Features • • • • • Low RDS(on) High Current Capability Avalanche Energy Specified NTDV, STDV and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com RDS(on) MAX V(BR)DSS 12 mW @ 5.0 V 40 V 69 A 7.5 mW @ 10 V D Applications • • • • ID MAX N−Channel CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification G S 4 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS ±20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) VGS ±30 V ID 69 A Continuous Drain Current (RqJC) (Note 1) TC = 25°C Steady State Power Dissipation (RqJC) (Note 1) Pulsed Drain Current TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 36 A, L = 0.3 mH, VDS = 40 V) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 49 PD 71 W IDM 125 A TJ, Tstg −55 to 175 °C IS 60 A EAS 195 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) RqJC 2.1 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 106 1 2 3 DPAK CASE 369C (Surface Mount) STYLE 2 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain AYWW 58 04NG Parameter 2 1 Drain 3 Gate Source A Y WW 5804N G = Assembly Location* = Year = Work Week = Device Code = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. 1. Surface−mounted on FR4 board using the minimum recommended pad size. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2016 November, 2016 − Rev. 11 1 Publication Order Number: NTD5804N/D NTD5804N, NTDV5804N, SVD5804N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Typ Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 45 V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ 41 mV/°C Parameter Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 40 V TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 3.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance 2.0 7.3 RDS(on) gFS mV/°C VGS = 10 V, ID = 30 A 5.7 7.5 VGS = 5 V, ID = 10 A 7.9 12 VDS = 15 V, ID = 15 A 12 mW S CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 2460 2850 310 400 280 Output Capacitance Coss Reverse Transfer Capacitance Crss 215 Total Gate Charge QG(TOT) 45 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 12.6 td(on) 11.8 VGS = 10 V, VDS = 32 V, ID = 30 A pF nC 2.8 10 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 10 V, VDD = 32 V, ID = 30 A, RG = 2.5 W tf ns 18.7 26.8 5.9 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.81 TJ = 150°C 0.63 tRR ta tb 21.7 VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A QRR 1.2 V ns 11.9 9.8 11.8 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NTD5804N, NTDV5804N, SVD5804N TYPICAL PERFORMANCE CHARACTERISTICS 100 100 VDS ≥ 10 V VGS = 7, 6, 5.8, 5.5, 5.2, 5 V 80 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) TJ = 25°C 10 V 90 4.5 V 70 60 50 40 4.0 V 30 20 0 TJ = 100°C 25 TJ = 25°C TJ = −55°C 0 0 0.5 1 1.5 2 2.5 3 2 5 6 Figure 2. Transfer Characteristics ID = 30 A TJ = 25°C 0.017 0.015 0.013 0.011 0.009 0.007 4 5 6 7 9 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) Figure 1. On−Region Characteristics 0.019 0.05 TJ = 25°C 0.04 0.03 VGS = 5 V 0.02 0.01 VGS = 10 V 0 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Drain Current Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.9 1.8 1.7 1.6 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.021 0.005 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS = 0 V ID = 69 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 50 3.5 V 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 75 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 −50 −25 1000 TJ = 100°C 100 10 0 25 50 75 100 125 150 175 2 12 22 32 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 42 NTD5804N, NTDV5804N, SVD5804N TYPICAL PERFORMANCE CHARACTERISTICS 5000 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 15 VGS = 0 V TJ = 25°C 4000 45 QT 30 10 Ciss 3000 2000 Coss 1000 Crss 0 10 5 Vgs 0 5 10 Vds 15 20 25 30 35 VDS VGS Qgs 5 15 ID = 30 A TJ = 25°C 0 40 15 0 0 45 30 Qg, TOTAL GATE CHARGE (nC) GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge Figure 7. Capacitance Variation 1000 30 VDD = 32 V ID = 30 A VGS = 10 V IS, SOURCE CURRENT (A) td(off) tf tr 100 td(on) 10 1 VGS = 0 V TJ = 25°C 20 10 0 1 10 100 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 I D, DRAIN CURRENT (AMPS) t, TIME (ns) Qgd VDS, DRAIN−TO−SOURCE VOLTAGE (V) 6000 100 10 ms 100 ms 10 VGS = 20 V SINGLE PULSE TC = 25°C 1 1 ms 10 ms dc RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 1.0 NTD5804N, NTDV5804N, SVD5804N r(t), Effective Transient Thermal Resistance (°C/W) TYPICAL PERFORMANCE CHARACTERISTICS 10 D = 0.5 1 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (s) Figure 12. Thermal Response ORDERING INFORMATION Package Shipping† NTD5804NT4G DPAK (Pb−Free) 2500 / Tape & Reel NTDV5804NT4G* DPAK (Pb−Free) 2500 / Tape & Reel STDV5804NT4G* DPAK (Pb−Free) 2500 / Tape & Reel SVD5804NT4G* DPAK (Pb−Free) 2500 / Tape & Reel SSVD5804NT4G* DPAK (Pb−Free) 2500 / Tape & Reel Order Number †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NTDV, STDV and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 5 NTD5804N, NTDV5804N, SVD5804N PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. A E C A b3 B c2 4 L3 Z D 1 2 H DETAIL A 3 L4 NOTE 7 c SIDE VIEW b2 e b TOP VIEW 0.005 (0.13) M C Z H L2 GAUGE PLANE C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS SOLDERING FOOTPRINT* 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ROTATED 905 CW 6.20 0.244 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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