IRF IRLB8314PBF Optimized for ups/inverter application Datasheet

IRLB8314PbF
HEXFET® Power MOSFET
Application
 Optimized for UPS/Inverter Applications
 Low Voltage Power Tools
VDSS
D
30
RDS(on) max
G
S
Benefits
 Best in Class Performance for UPS/Inverter Applications
 Very Low RDS(on) at 4.5V VGS
 Ultra-Low Gate Impedance
 Fully Characterized Avalanche Voltage and Current
 Lead-Free, RoHS Compliant
(@ VGS = 10V)
(@ VGS = 4.5V)
Qg (typical)
V
2.4
m
3.2
40
ID (Silicon Limited)
171
ID (Package Limited)
130A
nC
A
S
D
G
TO-220Pak
G
Gate
Base part number
Package Type
IRLB8314PbF
TO-220Pak
Standard Pack
Form
Quantity
Tube
50
D
Drain
S
Source
Orderable Part Number
IRLB8314PbF
Absolute Maximium Rating
Symbol
VGS
ID @ TC = 25°C
Parameter
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V (Silicon Limited)
ID @ TC = 100°C
ID @ TC = 25°C
IDM
PD @TC = 25°C
PD @TC = 100°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
Continuous Drain Current, VGS @ 10V (Package Limited)
Pulsed Drain Current 
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
TJ
TSTG
Storage Temperature Range
Soldering Temperature, for 10 seconds (1.6mm from case)
Mounting Torque, 6-32 or M3 Screw
Thermal Resistance
Symbol
Parameter
Junction-to-Case 
RJC
Case-to-Sink, Flat Greased Surface
RCS
Junction-to-Ambient
RJA
Notes 
1
Max.
± 20
171
Units
V
A
120
130
664
125
63
0.83
W
W
W/°C
-55 to + 175
°C
300
10 lbf·in (1.1 N·m)
Typ.
–––
0.50
–––
Max.
1.2
–––
62
Units
°C/W
through  are on page 8
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IRLB8314PbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
BVDSS
Drain-to-Source Breakdown Voltage
BVDSS/TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
VGS(th)/TJ
Gate Threshold Voltage
Gate Threshold Voltage Coefficient
IDSS
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Forward Transconductance
Total Gate Charge
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Gate Charge Overdrive
Switch Charge (Qgs2 + Qgd)
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
IGSS
gfs
Qg
Qgs1
Qgs2
Qgd
Qgodr
Qsw
RG
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Min.
30
–––
–––
–––
1.2
–––
–––
–––
–––
–––
307
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ. Max. Units
Conditions
––– –––
V VGS = 0V, ID = 250µA
14
––– mV/°C Reference to 25°C, ID = 1mA 
1.9
2.4 m VGS = 10V, ID = 68A 
2.6
3.2
VGS = 4.5V, ID = 68A 
1.7
2.2
V VDS = VGS, ID = 100µA
-7.0 ––– mV/°C
–––
1.0
VDS =24 V, VGS = 0V
µA
––– 150
VDS =24V,VGS = 0V,TJ =125°C
––– 100
VGS = 20V
nA
––– -100
VGS = -20V
––– –––
S VDS = 15V, ID =68A
40
60
6.8
–––
VDS = 15V
13
–––
nC VGS = 4.5V
8.7
–––
ID = 68A
11.5 –––
21.7
1.7
–––

19
–––
VDD = 15V
142 –––
ns ID = 68A
32
–––
RG= 1.8
VGS = 4.5V
72
–––
5050 –––
VGS = 0V
890 –––
pF VDS = 15V
ƒ = 1.0MHz
500 –––
Avalanche Characteristics
EAS (Thermally limited)
Single Pulse Avalanche Energy 
EAS (tested)
Single Pulse Avalanche Energy Tested Value 
IAR
Avalanche Current 
EAR
Repetitive Avalanche Energy 
180
900
68
12.5
mJ
A
mJ
Diode Characteristics
Symbol
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Min.
Typ. Max. Units
–––
–––
171
–––
–––
664
VSD
Diode Forward Voltage
–––
–––
1.0
trr
Qrr
Reverse Recovery Time
Reverse Recovery Charge
–––
–––
21
54
31
81
IS
ISM
2
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A
V
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
TJ = 25°C,IS = 68A,VGS = 0V 
ns TJ = 25°C IF = 68A ,VDD=15V
nC di/dt = 430A/µs 
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IRLB8314PbF
1000
1000
BOTTOM
100
2.8V
 60µs PULSE WIDTH
Tj = 25°C
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
TOP
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
10
BOTTOM
100
2.8V
 60µs PULSE WIDTH
Tj = 175°C
10
0.1
1
10
100
0.1
VDS, Drain-to-Source Voltage (V)
100
1.8
RDS(on) , Drain-to-Source On Resistance
(Normalized)
ID, Drain-to-Source Current (A)
10
Fig 2. Typical Output Characteristics
1000
T J = 175°C
10
T J = 25°C
1
VDS = 15V
 60µs PULSE WIDTH
0.1
1.0
2.0
3.0
4.0
5.0
6.0
ID = 120A
VGS = 10V
1.6
1.4
1.2
1.0
0.8
0.6
7.0
-60 -40 -20
VGS, Gate-to-Source Voltage (V)
100000
20 40 60 80 100 120 140 160 180
Fig 4. Normalized On-Resistance vs. Temperature
14
VGS, Gate-to-Source Voltage (V)
VGS = 0V,
f = 1 MHZ
C iss = C gs + C gd, C ds SHORT ED
C rss = C gd
C oss = C ds + C gd
10000
C iss
C oss
1000
0
T J , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics
C, Capacitance (pF)
1
VDS, Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics
100
VGS
10V
5.5V
4.5V
4.0V
3.5V
3.3V
3.0V
2.8V
C rss
ID = 68A
12
VDS= 24V
VDS= 15V
10
8
6
4
2
0
100
0
0.1
1
10
100
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage
3
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20
40
60
80
100
120
QG Total Gate Charge (nC)
Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
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IRLB8314PbF
1000
1000
ID, Drain-to-Source Current (A)
ISD , Reverse Drain Current (A)
100µsec
T J = 175°C
100
10
T J = 25°C
1
100
1msec
Limited by
Package
10
OPERATION IN THIS AREA
LIMITED BY R (on)
DS
Tc = 25°C
Tj = 175°C
Single Pulse
VGS = 0V
DC
0.1
0.1
0.0
0.5
1.0
1.5
2.0
0.1
2.5
1
10
100
VDS, Drain-toSource Voltage (V)
VSD , Source-to-Drain Voltage (V)
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode Forward Voltage
180
2.5
Limited By Package
VGS(th) Gate threshold Voltage (V)
160
140
ID, Drain Current (A)
10msec
1
120
100
80
60
40
20
2.0
1.5
ID = 100µA
ID = 250µA
ID = 1.0mA
1.0
0.5
0
25
50
75
100
125
150
-75
175
-50
-25
0
25
50
75
100 125 150 175
T J , Temperature ( °C )
T C , Case Temperature (°C)
Fig 9. Maximum Drain Current vs. Case Temperature
Fig 10. Threshold Voltage vs. Temperature
Thermal Response ( Z thJC ) °C/W
10
1
D = 0.50
0.20
0.1
0.01
0.001
1E-006
0.10
0.05
0.02
0.01
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
SINGLE PULSE
( THERMAL RESPONSE )
1E-005
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
4
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800
10
ID = 86A
8
6
T J = 125°C
4
2
T J = 25°C
I D
14A
30A
BOTT OM 68A
T OP
600
400
200
0
0
2
6
10
14
18
VGS, Gate-to-Source Voltage (V)
Fig 12. Typical On-Resistance vs. Gate Voltage
5
EAS, Single Pulse Avalanche Energy (mJ)
RDS(on), Drain-to -Source On Resistance ( m )
IRLB8314PbF
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25
50
75
100
125
150
175
Starting T J, Junction Temperature (°C)
Fig 14. Maximum Avalanche Energy vs. Drain Current
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IRLB8314PbF
Fig 18. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs
V (B R )D S S
tp
15V
L
VDS
D .U .T
RG
IA S
D R IV E R
+
VD D
-
A
20V
tp
IAS
0 .0 1 
Fig 19a. Unclamped Inductive Test Circuit
Fig 19b. Unclamped Inductive Waveforms
Fig 20a. Switching Time Test Circuit
Fig 20b. Switching Time Waveforms
Id
Vds
Vgs
V g s (th )
Q gs1 Q gs2
Fig 21a. Gate Charge Test Circuit
6
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Q gd
Q godr
Fig 21b. Gate Charge Waveform
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IRLB8314PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))
TO-220AB Part Marking Information
EXAM PLE:
T H IS IS A N IR F 1 0 1 0
LO T C O D E 1789
ASSEM BLED O N W W 19, 2000
IN T H E A S S E M B L Y L IN E "C "
N o t e : "P " in a s s e m b ly lin e p o s it io n
in d ic a t e s "L e a d - F r e e "
IN T E R N A T IO N A L
R E C T IF IE R
LO G O
ASSEM BLY
LO T C O D E
PART N UM BER
D ATE C O D E
YEAR 0 = 2000
W EEK 19
L IN E C
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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IRLB8314PbF
Qualification Information†
Industrial
Qualification Level
(per JEDEC JESD47F) ††
TO-220
Moisture Sensitivity Level
N/A
Yes
RoHS Compliant
†
Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/
††
Applicable version of JEDEC standard at the time of product release.
Notes:
 Repetitive rating; pulse width limited by max. junction temperature.
 Limited by TJmax, starting TJ = 25°C, L = 0.067mH, RG = 50, IAS = 68A, VGS =10V.

Pulse width  400µs; duty cycle  2%.
 R is measured at TJ approximately 90°C.
 This value determined from sample failure population, starting T J =25°C,
L=0.5mH, RG = 50, IAS =60A, VGS =10V.
 Calculated continuous current based on maximum allowable junction temperature. Bond wire current limit is
130A. Note that current limitations arising from heating of the device leads may occur with some lead mounting
arrangements. (Refer to AN-1140).
IR WORLD HEADQUARTERS: 101N Sepulveda Blvd, El Segundo, California 90245, USA
To contact International Rectifier, please visit http://www.irf.com/whoto-call/
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