MBR10HxxCT, MBRF10HxxCT, MBRB10HxxCT www.vishay.com Vishay General Semiconductor Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance TO-220AB FEATURES ITO-220AB MBR10H90CT MBR10H100CT PIN 1 PIN 2 PIN 3 CASE 2 3 1 1 2 3 MBRF10H90CT MBRF10H100CT PIN 1 PIN 2 PIN 3 TO-263AB K 2 1 MBRB10H90CT MBRB10H100CT PIN 2 Power pack Guardring for overvoltage protection Low power loss, high efficiency Low forward voltage drop Low leakage current High forward surge capability High frequency operation Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AB and ITO-220AB package) • AEC-Q101 qualified available - Automotive ordering code: base P/NHE3 • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TYPICAL APPLICATIONS K PIN 1 • • • • • • • • For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, DC/DC converters, and polarity protection application. HEATSINK PRIMARY CHARACTERISTICS MECHANICAL DATA IF(AV) 2x5A VRRM 90 V to 100 V IFSM 150 A Case: TO-220AB, ITO-220AB, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified VF 0.61 V IR 3.5 μA TJ max. 175 °C Package TO-220AB, ITO-220AB, TO-263AB Diode variations Dual common cathode Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) SYMBOL MBR10H90CT MBR10H100CT Maximum repetitive peak reverse voltage VRRM 90 100 Working peak reverse voltage VRWM 90 100 Maximum DC blocking voltage VDC 90 100 PARAMETER Maximum average forward rectified current at TC = 105 °C total device per diode Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IF(AV) IFSM UNIT V 10 5.0 150 A Peak repetitive reverse current per diode at tp = 2.0 µs, 1 kHz IRRM 0.5 Voltage rate of change (rated VR) dV/dt 10 000 V/μs TJ, TSTG -65 to +175 °C VAC 1500 V Operating junction and storage temperature range Isolation voltage (ITO-220AB only) from terminal to heatsink t = 1 min Revision: 29-Jul-15 Document Number: 88668 1 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10HxxCT, MBRF10HxxCT, MBRB10HxxCT www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL Maximum instantaneous forward voltage per diode VF (1) IR (1) Maximum reverse current per diode VALUE TEST CONDITIONS IF = 5 A TJ = 25 °C UNIT 0.76 IF = 5 A TJ = 125 °C 0.61 IF = 10 A TJ = 25 °C 0.85 IF = 10 A TJ = 125 °C 0.71 TJ = 25 °C 3.5 μA TJ = 100 °C 4.5 mA Rated VR V Notes (1) Pulse test: 300 μs pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL MBR MBRF MBRB UNIT RJC 2.2 5.2 2.2 °C/W ORDERING INFORMATION (Example) PACKAGE TO-220AB PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE MBR10H100CT-E3/45 1.85 45 50/tube Tube ITO-220AB MBRF10H100CT-E3/45 1.79 45 50/tube Tube TO-263AB MBRB10H100CT-E3/45 1.35 45 50/tube Tube TO-263AB MBRB10H100CT-E3/81 1.35 81 800/reel Tape and reel TO-220AB MBR10H100CTHE3/45 (1) 1.85 45 50/tube Tube ITO-220AB MBRF10H100CTHE3/45 (1) 1.79 45 50/tube Tube TO-263AB MBRB10H100CTHE3/45 (1) 1.35 45 50/tube Tube TO-263AB MBRB10H100CTHE3/81 (1) 1.35 81 800/reel Tape and reel Note (1) AEC-Q101 qualified Revision: 29-Jul-15 Document Number: 88668 2 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10HxxCT, MBRF10HxxCT, MBRB10HxxCT www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TC = 25 °C unless otherwise noted) Average Forward Current (A) MBR, MBRB 10 8 6 MBRF 4 2 Instantaneous Reverse Current (µA) 10 000 12 0 TJ = 125 °C 100 TJ = 100 °C 10 1 TJ = 25 °C 0.1 0.01 0 25 50 75 100 125 150 175 0 20 40 60 80 100 Case Temperature (°C) Percent of Rated Peak Reverse Voltage (%) Fig. 1 - Forward Current Derating Curve Per Diode Fig. 4 - Typical Reverse Characteristics Per Diode 175 1000 TJ = TJ Max. 8.3 ms Single Half Sine-Wave 150 Junction Capacitance (pF) Peak Forward Surge Current (A) TJ = 150 °C 1000 125 100 75 50 100 10 25 1 10 0.1 100 1 10 100 Number of Cycles at 60 Hz Reverse Voltage (V) Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 175 °C 10 TJ = 150 °C 1 TJ = 125 °C TJ = 100 °C 0.1 TJ = 25 °C 0.01 0.1 TJ = - 40 °C 0.3 0.5 0.7 0.9 1.1 Junction to Case 10 1 MBR, MBRB 0.1 0.01 0.1 1 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 29-Jul-15 Document Number: 88668 3 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 MBR10HxxCT, MBRF10HxxCT, MBRB10HxxCT www.vishay.com Vishay General Semiconductor Transient Thermal Impedance (°C/W) 100 Junction to Case 10 1 MBRF 0.1 0.01 0.1 1 10 100 t - Pulse Duration (s) Fig. 7 - Typical Transient Thermal Impedance Per Diode PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB ITO-220AB 0.404 (10.26) 0.384 (9.75) 0.415 (10.54) MAX. 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.370 (9.40) 0.360 (9.14) 0.185 (4.70) 0.175 (4.44) 0.154 (3.91) 0.148 (3.74) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 PIN 2 0.635 (16.13) 0.625 (15.87) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 3 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.671 (17.04) 0.651 (16.54) PIN 1 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.33 (8.38) MIN. 0.360 (9.14) 0.320 (8.13) K 2 0.624 (15.85) 0.591 (15.00) 0.055 (1.40) 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) 0.105 (2.67) 0.095 (2.41) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0 195 (4 95) K 1 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.025 (0.64) 0.015 (0.38) 0.105 (2.67) 0.095 (2.41) TO-263AB 0.245 (6.22) MIN. 0.191 (4.85) 0.171 (4.35) 0.057 (1.45) 0.045 (1.14) 0.022 (0.56) 0.014 (0.36) 0.190 (4.83) 0.160 (4.06) 3 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.411 (10.45) 0.380 (9.65) 7° REF. 7° REF. 0.560 (14.22) 0.530 (13.46) 0.205 (5.20) 0.195 (4.95) 2 0.135 (3.43) DIA. 0.122 (3.08) DIA. 0.350 (8.89) 0.330 (8.38) 0.603 (15.32) 0.573 (14.55) 0.160 (4.06) 0.140 (3.56) 0.105 (2.67) 0.095 (2.41) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.145 (3.68) 0.135 (3.43) 7° REF. 0.076 (1.93) REF. 45° REF. 0.205 (5.20) 0.195 (4.95) 0.140 (3.56) 0.110 (2.79) 0.15 (3.81) MIN. 0.08 (2.032) MIN. 0.105 (2.67) 0.095 (2.41) Revision: 29-Jul-15 Document Number: 88668 4 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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