Panasonic DE2S062 Silicon epitaxial planar type Datasheet

This product complies with the RoHS Directive (EU 2002/95/EC).
DE2S062
Silicon epitaxial planar type
For ESD protection
 Features
 Package
 High electrostatic discharge ESD
 Contributes to miniaturization of sets, reduction of component count.
 Eco-friendly Halogen-free package
 Code
SSMini2-F5-B
 Pin Name
1. Cathode
2. Anode
 Packaging
Embossed type (Thermo-compression sealing): 10000 pcs / reel (standard)
 Marking Symbol: E1
 Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
PT
150
mW
ESD
±30
kV
Junction temperature
Tj
150
°C
Storage temperature
Tstg
–55 to +150
°C
Total power dissipation
Electrostatic discharge
*1
*2
Note) *1: PT = 150 mW achieved with a printed circuit board.
*2: Test method: IEC61000-4-2 (C = 150 pF, R = 330 W, Contact discharge: 10 times)
 Electrical Characteristics Ta = 25°C±3°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
6.51
V
1
mA
Zener voltage *1, 2
VZ
IR = 1 mA
Reverse current
IR
VR = 4 V
Terminal capacitance
Ct
VR = 0 V, f = 1 MHz
55
pF
Temperature coefficient of zener voltage *3
SZ
IZ = 1 mA
2.3
mV/°C
5.89
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 measuring methods for diodes.
2. *1: The temperature must be controlled 25°C for VZ measurement. VZ value measured at other temperature must be adjusted to VZ (25°C)
*2 : VZ guaranteed 20 ms after current flow.
*3 : Tj = 25°C to 150°C
Publication date: October 2010
Ver. AED
1
This product complies with the RoHS Directive (EU 2002/95/EC).
DE2S062
DE2S062_IF-VF
102
IZ  VZ
102
Ta = 25°C
10−1
10−6
1
10−7
10−1
10−2
10−8
10−2
0
0.4
0.8
1.2
10−3
0
Forward voltage VF (V)
2
4
DE2S062_SZ-IZ
Terminal capacitance Ct (pF)
Temparature coefficient of zener voltage SZ (mV/°C)
4
2
0
−2
0
2
4
6
10
12
8
10
Ta = 25°C
60
40
20
0
0
1
2
3
4
Reverse voltage VR (V)
Ver. AED
10−9
0
1
2
3
4
5
Reverse voltage VR (V)
Ct  VR
80
Zener current IZ (mA)
2
8
DE2S062_Ct-VR
SZ  IZ
−4
6
Zener voltage VZ (V)
6
Ta = 25°C
Ta = 25°C
Reverse current IR (mA)
1
IR  VR
10−5
10
Zener current IZ (mA)
Forward current IF (mA)
10
10−3
DE2S062_IR-VR
DE2S062_IZ-VZ
IF  VF
5
6
This product complies with the RoHS Directive (EU 2002/95/EC).
DE2S062
SSMini2-F5-B
Unit: mm
+0.05
0.80 −0.03
+0.05
0.13 −0.02
1.60 ±0.05
1.20 −0.03
+0.05
2
5°
0 to 0.05
1
0.20 ±0.05
0.30 ±0.05
(0.15)
0.60 −0.03
+0.05
5°
Ver. AED
3
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semiconductors described in this book
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defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.
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