TI1 OPA192IDBVT High voltage, rail-to-rail input/output, precision operational amplifiers, e-trim sery Datasheet

OPA192
OPA2192
OPA4192
www.ti.com
SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
High Voltage, Rail-to-Rail Input/Output,
Precision Operational Amplifiers, e-trim™ Series
Check for Samples: OPA192, OPA2192, OPA4192
FEATURES
APPLICATIONS
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1
23456
Low Offset Voltage: ±5 µV
Low Offset Voltage Drift: ±0.2µV/°C
Low Noise: 5.5 nV/√Hz at 1 kHz
Wide Bandwidth: 10 MHz GBW (G = 100)
High Slew Rate : 20 V/µs
Low Quiescent Current: 1 mA per Amplifier
Rail-to-Rail Input and Output
Wide Supply: ±2.25 V to ±18 V, +4.5 V to +36 V
EMI/RFI Filtered Inputs
High Common-Mode Rejection: 140 dB
Low Bias Current: ±5 pA
Differential Input Voltage Range to Supply Rail
High Capacitive Load Drive Capability: 1 nF
Industry standard packages:
– Single in SO-8, MSOP-8 and SOT23-5
– Dual in SO-8 and MSOP-8
– Quad in SO-14 and TSSOP-14
High-Resolution ADC Driver Amplifiers
Multiplexed Data-Acquisition Systems
SAR ADC Reference Buffers
Programmable Logic Controllers
Test and Measurement Equipment
High-Side and Low-Side Current Sensing
High Precision Comparator
DESCRIPTION
The OPA192 family (1) (OPA192, OPA2192, and
OPA4192) is a new generation of 36-V, e-trim
operational
amplifiers.
These
devices
offer
outstanding dc precision and ac performance,
including rail-to-rail input/output, low offset (±5 µV,
typ), low offset drift (±0.2 µV/°C, typ), and 10MHz
bandwidth. Unique features such as differential inputvoltage range to the supply rail, high output current
and high capacitive load drive of up to 1 nF, and high
slew rate make the OPA192 a robust, highperformance operational amplifier for high-voltage
industrial applications. The OPA192 family of op
amps is available in standard packages and is
specified from –40°C to +125°C.
(1)
OPA192 SO-8 package is production data. All other devices
are product preview.
OPA192 IN A HIGH-VOLTAGE, MULTIPLEXED, DATA-ACQUISITION SYSTEM
Analog Inputs
REF3240
RC Filter
OPA192
RC Filter
Reference Driver
Bridge Sensor
OPA192
Gain Network
Gain Network
+
4:2
HV MUX
Thermocouple
REF
+
Current Sensing
Photo
LED Detect
Optical Sensor
High Voltage Multiplexed Input
VINP
OPA192
Gain Network
+
Gain Network
OPA192
High Voltage Level Translation
Anti-Aliasing
Filter
ADS8864
VIN
M
VCM
1
2
3
4
5
6
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of
Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.
e-trim is a trademark of Texas Instruments.
TINA-TI is a trademark of Texas Instruments, Inc and DesignSoft, Inc.
Bluetooth is a registered trademark of Bluetooth SIG, Inc.
TINA, DesignSoft are trademarks of DesignSoft, Inc.
All other trademarks are the property of their respective owners.
UNLESS OTHERWISE NOTED this document contains
PRODUCTION DATA information current as of publication date.
Products conform to specifications per the terms of Texas
Instruments standard warranty. Production processing does not
necessarily include testing of all parameters.
Copyright © 2013–2014, Texas Instruments Incorporated
OPA192
OPA2192
OPA4192
SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
www.ti.com
This integrated circuit can be damaged by ESD. Texas Instruments recommends that all integrated circuits be handled with
appropriate precautions. Failure to observe proper handling and installation procedures can cause damage.
ESD damage can range from subtle performance degradation to complete device failure. Precision integrated circuits may be more
susceptible to damage because very small parametric changes could cause the device not to meet its published specifications.
PACKAGE AND ORDERING INFORMATION (1)
(1)
For the most current package and ordering information, see the Package Option Addendum at the end of this document, or visit the
device product folder at www.ti.com.
ABSOLUTE MAXIMUM RATINGS (1)
Over operating free-air temperature range, unless otherwise noted.
Supply voltage
Signal input
terminals
VALUE
UNIT
±20 (+40, single supply)
V
(V–) – 0.5 to (V+) + 0.5
V
Common-mode
Voltage
Differential
Current
(V+) - (V-) + 0.2
V
±10
mA
Output short circuit (2)
Continuous
Operating temperature
–55 to +150
°C
Storage temperature
–65 to +150
°C
Junction temperature
+150
°C
Human body model (HBM)
4
kV
Charged device model (CDM)
1
kV
Electrostatic
discharge (ESD)
ratings
(1)
(2)
Stresses above these ratings may cause permanent damage. Exposure to absolute maximum conditions for extended periods may
degrade device reliability. These are stress ratings only, and functional operation of the device at these or any other conditions beyond
those specified is not implied.
Short-circuit to ground, one amplifier per package.
ELECTRICAL CHARACTERISTICS: VS= ±4 V to ±18 V (VS= +8 V to +36 V)
At TA = +25°C, VCM = VOUT = VS / 2, and RLOAD = 10 kΩ connected to VS / 2, unless otherwise noted.
OPA192
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
±5
±25
µV
OFFSET VOLTAGE
VOS
Input offset voltage
dVOS/dT
Input offset voltage drift
TA = –40°C to +125°C
PSRR
Power-supply rejection
ratio
TA = –40°C to +125°C
TA = –40°C to +125°C
(V–) – 0.1 V < VCM < (V+) – 3 V
±75
µV
±0.2
±0.5
µV/°C
±0.3
±1.0
µV/V
±5
±20
pA
±5
nA
±20
pA
±2
nA
INPUT BIAS CURRENT
IB
IOS
Input bias current
Input offset current
TA = –40°C to +125°C
±2
TA = –40°C to +125°C
NOISE
En
Input voltage noise
(V–) – 0.1 V < VCM < (V+) – 3V
f = 0.1 Hz to 10 Hz
1.30
µVPP
(V+) – 1.5 V < VCM < (V+) + 0.1
V
f = 0.1 Hz to 10 Hz
4
µVPP
(V–) – 0.1 V < VCM < (V+) – 3 V
en
in
2
Input voltage noise
density
(V+) – 1.5 V < VCM < (V+) + 0.1
V
Input current noise
density
Submit Documentation Feedback
f = 100 Hz
f = 1 kHz
f = 100 Hz
10.5
nV/√Hz
5.5
nV/√Hz
32
nV/√Hz
f = 1 kHz
12.5
nV/√Hz
f = 1kHz
1.5
fA/√Hz
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: OPA192 OPA2192 OPA4192
OPA192
OPA2192
OPA4192
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SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
ELECTRICAL CHARACTERISTICS: VS= ±4 V to ±18 V (VS= +8 V to +36 V) (continued)
At TA = +25°C, VCM = VOUT = VS / 2, and RLOAD = 10 kΩ connected to VS / 2, unless otherwise noted.
OPA192
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
(V+) +
0.1
V
INPUT VOLTAGE
VCM
Common-mode voltage
range
(V–) – 0.1
(V–) – 0.1 V < VCM < (V+) – 3 V
(V+) – 3 V < VCM < (V+) - 1.5 V
CMRR
Common-mode
rejection ratio
TA = –40°C to +125°C
120
140
dB
See Typical Characteristics
(V+) – 1.5 V < VCM < (V+) + 0.1
V
100
120
dB
(V–) – 0.1 V < VCM < (V+) – 3 V
114
126
dB
(V+) – 1.5 V < VCM < (V+) + 0.1
V
86
100
dB
INPUT IMPEDANCE
ZID
Differential
ZIC
Common-mode
100 || 1.6
MΩ || pF
1013Ω || pF
1 || 6.4
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
(V–) + 0.6 V < VO < (V+) – 0.6 V
RLOAD = 2 kΩ
120
134
dB
(V–) + 0.6 V < VO < (V+) – 0.6 V
TA = –40°C to +125°C
RLOAD = 2 kΩ
114
126
dB
(V–) + 0.3 V < VO < (V+) – 0.3 V
RLOAD = 10 kΩ
126
140
dB
(V–) + 0.3 V < VO < (V+) – 0.3 V
TA = –40°C to +125°C
RLOAD = 10 kΩ
120
134
dB
10
MHz
20
V/µs
VS = ±18 V, G = 1, 10-V step
1.4
µs
VS = ±18 V, G = 1, 5-V step
0.9
µs
VS = ±18 V, G = 1, 10-V step
2.1
µs
VS = ±18 V, G = 1, 5-V step
1.8
µs
200
ns
0.00008
%
FREQUENCY RESPONSE
GBW
Unity gain bandwidth
SR
Slew rate
G = 1, 10-V step
To 0.01%
ts
Settling time
To 0.001%
tOR
Overload recovery time
VIN × G = VS
THD+N
Total harmonic
distortion + noise
G = 1, f = 1 kHz, VO = 3.5 VRMS
OUTPUT
No load
Positive rail
VO
Voltage output swing
from rail
Short-circuit current
CLOAD
Capacitive load drive
ZO
Open-loop output
impedance
10
mV
95
110
mV
RLOAD = 2 kΩ
430
500
mV
5
10
mV
RLOAD = 10 kΩ
95
110
mV
RLOAD = 2 kΩ
430
500
mV
No load
Negative rail
ISC
5
RLOAD = 10 kΩ
±65
See Typical Characteristics
f = 1 MHz, IO = 0 A, See Figure 23
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: OPA192 OPA2192 OPA4192
375
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mA
pF
Ω
3
OPA192
OPA2192
OPA4192
SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
www.ti.com
ELECTRICAL CHARACTERISTICS: VS= ±2.25 V to ±4 V (VS= +4.5 V to +8 V)
At TA = +25°C, VCM = VOUT = VS / 2, and RLOAD = 10 kΩ connected to VS / 2, unless otherwise noted.
OPA192
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
±5
±25
µV
OFFSET VOLTAGE
VCM = (V+) – 3 V
VOS
Input offset voltage
See Common-Mode Voltage Range
section
VCM = VS / 2
VCM = (V+) – 1.5 V
±10
TA = –40°C to +125°C, VCM = (V+) – 3 V
dVOS/dT
PSRR
Input offset voltage drift
Power-supply rejection ratio
TA = –40°C to +125°C
µV
±25
µV
±75
µV
(V–) – 0.1 V < VCM <
(V+) – 1.5 V
±0.2
±0.5
µV/°C
(V+) – 1.5 V < VCM < (V+)
+ 0.1 V
±0.5
±3
µV/°C
VCM = (V-)
TA = –40°C to +125°C
±0.5
µV/V
±1
µV/V
INPUT BIAS CURRENT
IB
IOS
Input bias current
Input offset current
±5
TA = –40°C to +125°C
±2
TA = –40°C to +125°C
±20
pA
±5
nA
±20
pA
±2
nA
NOISE
En
Input voltage noise
(V–) – 0.1 V < VCM < (V+) – 3 V, f = 0.1 Hz to 10 Hz
(V–) – 0.1 V < VCM < (V+) – 3 V
en
Input voltage noise density
(V+) – 1.5 V < VCM < (V+) + 0.1 V
in
1.30
(V+) – 1.5 V < VCM < (V+) + 0.1 V, f = 0.1 Hz to 10 Hz
Input current noise density
µVPP
4
f = 100 Hz
µVPP
10.5
nV/√Hz
f = 1 kHz
5.5
nV/√Hz
f = 100 Hz
32
nV/√Hz
f = 1 kHz
12.5
nV/√Hz
f = 1kHz
1.5
fA/√Hz
INPUT VOLTAGE
VCM
Common-mode voltage range
(V–) – 0.1
(V–) – 0.1 V < VCM <
(V+) – 3 V
CMRR
94
(V+) – 3 V < VCM <
(V+) – 1.5 V
Common-mode rejection ratio
110
See Typical Characteristics
(V+) – 1.5V < VCM < (V+)
+ 0.1 V
TA = –40°C to +125°C
(V+) + 0.1
(V–) – 0.1 V < VCM <
(V+) – 3 V
V
dB
dB
100
120
dB
90
104
dB
INPUT IMPEDANCE
ZID
Differential
ZIC
Common-mode
100 || 1.6
1 || 6.4
MΩ || pF
1013Ω || pF
OPEN-LOOP GAIN
AOL
Open-loop voltage gain
(V–) + 0.6 V < VO < (V+) – 0.6 V
RLOAD = 2 kΩ
110
120
dB
(V–) + 0.6 V < VO < (V+) – 0.6 V
TA = –40 °C to +125 °C
RLOAD = 2 kΩ
100
114
dB
(V–) + 0.3 V < VO < (V+) – 0.3 V
RLOAD = 10 kΩ
110
126
dB
(V–) + 0.3 V < VO < (V+) – 0.3 V
TA = –40°C to +125°C
RLOAD = 10 kΩ
110
120
dB
10
MHz
20
V/µs
1
µs
200
ns
FREQUENCY RESPONSE
GBW
Unity gain bandwidth
SR
Slew rate
G = 1, 10-V step
ts
Settling time
To 0.01%
tOR
Overload recovery time
VIN× G = VS
4
Submit Documentation Feedback
VS = ±3 V, G = 1, 5-V
step
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: OPA192 OPA2192 OPA4192
OPA192
OPA2192
OPA4192
www.ti.com
SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
ELECTRICAL CHARACTERISTICS
At TA = +25°C, VCM = VOUT = VS / 2, and RLOAD = 10 kΩ connected to VS / 2, unless otherwise noted.
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNIT
POWER SUPPLY
VS
Specified voltage range
IQ
+4.5
Quiescent current per amplifier
IO = 0 A
1
TA = –40°C to +125°C, IO = 0 A
+36
V
1.2
mA
1.5
mA
TEMPERATURE
Specified range
–40
+125
°C
Operating range
–55
+150
°C
Thermal protection
+140
°C
THERMAL INFORMATION: OPA192
OPA192
THERMAL METRIC (1)
D (SO)
DBV (SOT23)
DGK (MSOP)
8 PINS
5 PINS
8 PINS
θJA
Junction-to-ambient thermal resistance
115.8
TBD
TBD
θJC(top)
Junction-to-case(top) thermal resistance
60.1
TBD
TBD
θJB
Junction-to-board thermal resistance
56.4
TBD
TBD
ψJT
Junction-to-top characterization parameter
12.8
TBD
TBD
ψJB
Junction-to-board characterization parameter
55.9
TBD
TBD
θJC(bottom)
Junction-to-case(bottom) thermal resistance
N/A
TBD
TBD
(1)
UNITS
°C/W
For more information about traditional and new thermal metrics, see the IC Package Thermal Metrics application report, SPRA953.
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: OPA192 OPA2192 OPA4192
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5
OPA192
OPA2192
OPA4192
SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
www.ti.com
PIN CONFIGURATIONS
DBV PACKAGE: OPA192
SOT23-5
(TOP VIEW)
OUT
1
V-
2
+IN
3
D AND DGK PACKAGES: OPA2192
SO-8 AND MSOP-8
(TOP VIEW)
V+
5
4
-IN
DCK PACKAGE: OPA192
SC-70
(TOP VIEW)
IN+
1
V-
2
IN-
3
NC
5
V+
4
OUT
(1)
1
1
8
V+
-IN A
2
7
OUT B
+IN A
3
6
-IN B
V-
4
5
+IN B
D AND PW PACKAGES: OPA4192
SO-14 AND TSSOP-14
(TOP VIEW)
D AND DGK PACKAGES: OPA192
SO-8 AND MSOP-8
(TOP VIEW)
(1)
OUT A
8
NC(1)
-IN
2
7
V+
+IN
3
6
OUT
V-
4
5
NC(1)
OUT A
1
14
OUT D
-IN A
2
13
-IN D
+IN A
3
12
+IN D
V+
4
11
V-
+IN B
5
10
+IN C
-IN B
6
9
-IN C
OUT B
7
8
OUT C
NC = No internal connection.
NOTE: OPA192 SO-8 package is production data. All other packages are product preview.
6
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Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: OPA192 OPA2192 OPA4192
OPA192
OPA2192
OPA4192
www.ti.com
SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
TYPICAL CHARACTERISTICS: Table of Graphs
Table 1. Characteristic Performance Measurements
DESCRIPTION
FIGURE
Offset Voltage Production Distribution
Figure 1
Offset Voltage Drift Distribution
Figure 2
Offset Voltage vs Temperature
Figure 3
Offset Voltage vs Common-Mode Voltage
Figure 4, Figure 5, Figure 6
Offset Voltage vs Power Supply
Figure 7
Open-Loop Gain and Phase vs Frequency
Figure 8
Closed-Loop Gain and Phase vs Frequency
Figure 9
Input Bias Current vs Common-Mode Voltage
Figure 10
Input Bias Current vs Temperature
Figure 11
Output Voltage Swing vs Output Current (maximum supply)
Figure 12
CMRR and PSRR vs Frequency
Figure 13
CMRR vs Temperature
Figure 14
PSRR vs Temperature
Figure 15
0.1-Hz to 10-Hz Noise
Figure 16
Input Voltage Noise Spectral Density vs Frequency
Figure 17
THD+N Ratio vs Frequency
Figure 18
THD+N vs Output Amplitude
Figure 19
Quiescent Current vs Supply Voltage
Figure 20
Quiescent Current vs Temperature
Figure 21
Open Loop Gain vs Temperature
Figure 22
Open Loop Output Impedance vs Frequency
Figure 23
Small Signal Overshoot vs Capacitive Load (100-mV output step)
Figure 24, Figure 25
No Phase Reversal
Figure 26
Positive Overload Recovery
Figure 27
Negative Overload Recovery
Figure 28
Small-Signal Step Response (100 mV)
Figure 29, Figure 30
Large-Signal Step Response
Figure 31
Settling Time
Figure 32, Figure 33, Figure 34, Figure 35
Short-Circuit Current vs Temperature
Figure 36
Maximum Output Voltage vs Frequency
Figure 37
Propagation Delay Rising Edge
Figure 38
Propagation Delay Falling Edge
Figure 39
Copyright © 2013–2014, Texas Instruments Incorporated
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OPA192
OPA2192
OPA4192
SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
www.ti.com
TYPICAL CHARACTERISTICS
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF, unless otherwise noted.
35
22
Distribution Taken From 66 Amplifiers
Distribution Taken From 4715 Amplifiers
Percentage of Amplifiers (%)
Percentage of Amplifiers (%)
20
18
16
14
12
10
8
6
4
Temperature = -40ƒC to 125ƒC
30
25
20
15
10
5
Offset Voltage (V)
0.95
0.85
0.75
0.65
0.50
0.40
0.30
0.20
0.10
0
-10
-9
-8
-7
-6
-5
-4
-3
-2
-1
0
1
2
3
4
5
6
7
8
9
10
0
0.00
2
Offset Voltage Drift (µV/ƒC)
C032
C013
Figure 1. OFFSET VOLTAGE PRODUCTION DISTRIBUTION
Figure 2. OFFSET VOLTAGE DRIFT DISTRIBUTION
100
50
66 Typical Units Shown
5 Typical Units Shown
75
25
25
VOS (V)
VOS (V)
50
0
±25
0
VCM = -18.1V
±50
±25
±75
±100
±75
±50
±50
±25
0
25
50
75
100
125
150
Temperature (ƒC)
±20
Figure 3. OFFSET VOLTAGE vs TEMPERATURE
±5
0
5
10
15
20
C001
Figure 4. OFFSET VOLTAGE vs COMMON-MODE VOLTAGE
200
5 Typical Units Shown
150
75
VCM = +18.1V
VCM = -18.1V
VOS (V)
25
0
±25
50
0
±50
P-Channel
N-Channel
±100
±50
VCM =+2.35V
VCM = -2.35 V
±150
±75
±100
12.5
5 Typical Units Shown
VS = ±2.25 V
100
50
VOS (V)
±10
VCM (V)
100
Transition
13.5
14.5
15.5
VCM (V)
16.5
17.5
18.5
Submit Documentation Feedback
Transition
P-Channel
±200
±2.5 ±2.0 ±1.5 ±1.0 ±0.5 0.0 0.5
VCM (V)
C001
Figure 5. OFFSET VOLTAGE vs COMMON-MODE VOLTAGE
8
±15
C001
N-Channel
1.0
1.5
2.0
2.5
C001
Figure 6. OFFSET VOLTAGE vs COMMON-MODE VOLTAGE
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: OPA192 OPA2192 OPA4192
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OPA2192
OPA4192
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SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
TYPICAL CHARACTERISTICS (continued)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF, unless otherwise noted.
50
CLOAD = 15 pF
120.0
100.0
10
80.0
Gain (dB)
20
0
±10
±20
±40
0.0
4.0
6.0
8.0
10.0 12.0 14.0 16.0 18.0 20.0
VSUPPLY (V)
1
10
100
1k
10k 100k
Frequency (Hz)
C001
60.0
1M
0
10M 100M
C004
Figure 8. OPEN-LOOP GAIN AND PHASE vs FREQUENCY
20
G = -100
G = +1
G = -1
G = -10
15
Input Bias Current (pA)
40.0
90
45
±20.0
Figure 7. OFFSET VOLTAGE vs POWER SUPPLY
Gain (dB)
Phase
40.0
20.0
2.0
135
60.0
±30
±50
Open-loop Gain
Phase (ƒ)
VOS (V)
30
0.0
180
140.0
10 Typical Units Shown
VS = ±2.25V to “18V
40
20.0
0.0
IB-
10
5
0
IB+
±5
±10
±15
±20.0
1000
10k
100k
1M
±20
±18.0
10M
Frequency (Hz)
IB+
IB Ios
Output Voltage (V)
Input Bias Current (pA)
4000
3000
2000
1000
Ios
±1000
±75
±50
±25
0
25
50
75
100
Temperature (ƒC)
125
150
18.0
C001
Figure 10. INPUT BIAS CURRENT vs COMMON-MODE
VOLTAGE
6000
0
9.0
VCM (V)
Figure 9. CLOSED-LOOP GAIN AND PHASE vs
FREQUENCY
5000
0.0
±9.0
C003
175
(V+) +1
(V+)
(V+) -1
(V+) -2
(V+) -3
(V+) -4
(V+) -5
(V-) +5
(V-) +4
(V-) +3
(V-) +2
(V-) +1
(V-)
(V-) -1
25ƒC
±40ƒC
85ƒC
125ƒC
125ƒC
85ƒC
±40ƒC
25ƒC
0
10
Figure 11. INPUT BIAS CURRENT vs TEMPERATURE
20
30
40
50
60
70
Output Current (mA)
C001
80
C018
Figure 12. OUTPUT VOLTAGE SWING vs OUTPUT
CURRENT (Maximum Supply)
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TYPICAL CHARACTERISTICS (continued)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF, unless otherwise noted.
Common-Mode Rejection Ratio (µV/V)
Common-Mode Rejection Ratio (dB),
Power-Supply Rejection Ratio (dB)
160.0
140.0
120.0
100.0
80.0
60.0
+PSRR
40.0
CMRR
20.0
-PSRR
10
8
6
4
VS = ±2.25 V, VCM = V+ - 3V
2
0
±2
VS = ±18 V, VCM = 0 V
±4
±6
±8
±10
0.0
1
10
100
1k
10k
100k
Frequency (Hz)
±75
1M
±50
±25
0
25
50
75
100
125
Temperature (ƒC)
C012
Figure 13. CMRR AND PSRR vs FREQUENCY
150
C001
Figure 14. CMRR vs TEMPERATURE
0.6
0.4
400 nV/div
Power-Supply Rejection Ratio (µV/V)
1
0.8
0.2
0
-0.2
-0.4
-0.6
-0.8
Peak-to-Peak Noise = VRMS × 6.6 = 1.30 Vpp
-1
±75
±50
±25
0
25
50
75
100
125
Temperature (ƒC)
Time (1 s/div)
150
C001
C001
Figure 15. PSRR vs TEMPERATURE
Figure 16. 0.1-Hz to 10-Hz NOISE
Total Harmonic Distortion + Noise (%)
9ROWDJH1RLVH'HQVLW\ Q9¥+]
VCM = V+ - 100 mV
N-Channel Input
100
10
VCM = 0 V
P-Channel Input
G = +1 V/V, RL = 2 k
G = -1 V/V, RL = 10 k
0.01
-80
G = -1 V/V, RL = 2 k
0.001
-100
0.0001
-120
VOUT = 3.5 VRMS
BW = 80 kHz
0.00001
1
0.1
1
10
100
1k
Frequency (Hz)
10k
100k
Submit Documentation Feedback
-140
10
100
1k
10k
Frequency (Hz)
C002
Figure 17. INPUT VOLTAGE NOISE SPECTRAL DENSITY vs
FREQUENCY
10
-60
G = +1 V/V, RL = 10 k
Total Harmonic Distortion + Noise (dB)
0.1
1000
C007
Figure 18. THD+N RATIO vs FREQUENCY
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TYPICAL CHARACTERISTICS (continued)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF, unless otherwise noted.
0.01
-80
0.001
-100
0.0001
-120
G = +1 V/V, RL = 10 k
G = +1 V/V, RL = 2 k
G = -1 V/V, RL = 10 k
G = -1 V/V, RL = 2 k
0.00001
0.01
0.1
1.2
1.1
IQ (mA)
Total Harmonic Distortion + Noise (%)
-60
f = 1 kHz
BW = 80 kHz
Total Harmonic Distortion + Noise (dB)
0.1
0.9
-140
1
1.0
0.8
10
0
Output Amplitude (VRMS)
4
8
12
16
20
24
28
32
36
Supply Voltage (V)
C008
Figure 19. THD+N vs OUTPUT AMPLITUDE
C001
Figure 20. QUIESCENT CURRENT vs SUPPLY VOLTAGE
3.0
1.2
Vs = 4.5V
Vs = 36V
2.0
1.1
AOL (µV/V)
IQ (mA)
1.0
Vs = ±18V
1
Vs = ±2.25V
0.0
±1.0
0.9
±2.0
±3.0
0.8
±75
±50
±25
0
25
50
75
100
125
±75
150
Temperature (ƒC)
RL = 10kŸ
±50
±25
0
25
50
75
100
125
150
Temperature (ƒC)
C001
Figure 21. QUIESCENT CURRENT vs TEMPERATURE
C001
Figure 22. OPEN-LOOP GAIN vs TEMPERATURE
10k
50
RII =NŸ
1 kO
R
RFF =NŸ
1 kO
45
G = -1
40
1k
Overshoot (%)
Output Impedance ( )
+ 18 V
100
35
±
+
+
VIN
±
30
RISO
OPA192
CL
± 18 V
25
20
RISO = 00
15
RISO = 2525
10
RISO = 50 50
5
10
0
0
1
10
100
1k
10k
100k
1M
10M
Frequency (Hz)
Figure 23. OPEN-LOOP OUTPUT IMPEDANCE vs
FREQUENCY
10p
100p
1n
Capacitive Load (F)
C016
C013
Figure 24. SMALL-SIGNAL OVERSHOOT vs CAPACITIVE
LOAD (100-mV Output Step)
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TYPICAL CHARACTERISTICS (continued)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF, unless otherwise noted.
50
±
40
35
OPA192
+
VIN
RL
CL
+
+
±
37 VPP ± 18 V
Sine Wave
(±18.5V)
± 18 V
±
5 V/div
30
VIN
+ 18 V
±
RISO
OPA192
+
Overshoot (%)
G = +1
+ 18 V
45
25
20
VOUT
15
VOUT
RISO = 0 0
RISO = 25
25
RISO = 50
50
10
5
0
10p
100p
Time (200 s/div)
1n
Capacitive Load (F)
C011
C013
Figure 25. SMALL-SIGNAL OVERSHOOT vs CAPACITIVE
LOAD (100-mV Output Step)
Figure 26. NO PHASE REVERSAL
1 kO
RRI I =NŸ
1 kO
RRI = NŸ
I
±
+
10 kO
RRF = NŸ
F
OPA192
OPA192
G = -10
VOUT
+
±
VOUT
± 18 V
5 V/div
5 V/div
±
±
+
VOUT
+
VIN
+ 18 V
VIN
10 kO
RRFF = NŸ
+ 18 V
VOUT
± 18 V
G = -10
VIN
VIN
Time (200 ns/div)
Time (200 ns/div)
C009
C010
Figure 27. POSITIVE OVERLOAD RECOVERY
Figure 28. NEGATIVE OVERLOAD RECOVERY
1 kO
RII = NŸ
kO
RFF = 1NŸ
G = -1
+ 18 V
+
20 mV/div
20 mV/div
±
G = +1
+ 18 V
±
±
OPA192
+
VIN
CL
± 18 V
OPA192
+
VIN
+
± 18 V
RL
CL
±
RL NŸ
CL = 10 pF
CL = 10 pF
Time (100 ns/div)
Time (120 ns/div)
C015
Figure 29. SMALL-SIGNAL STEP RESPONSE (100 mV)
12
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C006
Figure 30. SMALL-SIGNAL STEP RESPONSE (100 mV)
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TYPICAL CHARACTERISTICS (continued)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF, unless otherwise noted.
4
1 kO
RRI I =NŸ
Output Delta from Final Value (mV)
2 V/div
RL NŸ
CL = 10 pF
G = -1
RRFF =NŸ
1 kO
+ 18 V
±
+
OPA192
+
VIN
±
CL
± 18 V
G = +1
3
2
1
0
-1
0.01% Settling = ±1 mV
-2
-3
Step Applied at t = 0
-4
Time (300 ns/div)
0
0.25
0.5
0.75
Figure 31. LARGE-SIGNAL STEP RESPONSE
1.5
1.75
2
C034
4
G = +1
Output Delta from Final Value (mV)
Output Delta from Final Value (mV)
1.25
Figure 32. SETTLING TIME (10-V Positive Step)
4
3
2
1
0
0.01% Settling = ±500 V
-1
-2
-3
Step Applied at t = 0
-4
G = +1
3
2
1
0
-1
0.01% Settling = ±1 mV
-2
-3
Step Applied at t = 0
-4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Time (s)
1.8
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
Time (s)
C034
Figure 33. SETTLING TIME (5-V Positive Step)
2
C034
Figure 34. SETTLING TIME (10-V Negative Step)
80
4
G = +1
3
ISC, Source
ISC, Sink
60
2
1
ISC (mA)
Output Delta from Final Value (mV)
1
Time (s)
C005
0
0.01% Settling = ±500 V
-1
-2
40
20
-3
Step Applied at t = 0
0
-4
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
Time (s)
1.8
±75
±50
±25
Figure 35. SETTLING TIME (5-V Negative Step)
0
25
50
75
100
125
Temperature (ƒC)
C034
150
C001
Figure 36. SHORT-CIRCUIT CURRENT vs TEMPERATURE
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TYPICAL CHARACTERISTICS (continued)
VS = ±18 V, VCM = VS / 2, RLOAD = 10 kΩ connected to VS / 2, and CL = 100 pF, unless otherwise noted.
30
Maximum output voltage without
slew-rate induced distortion.
VS = ±15 V
Overdrive = 100 mV
Output Voltage (5 V/div)
Output Voltage (VPP)
25
20
15
VS = ±5 V
10
VS = ±2.25 V
5
tpLH = 0.97 s
VOUT Voltage
0
10k
100k
1M
Time (200 ns/div)
10M
Frequency (Hz)
C033
C025
Output Voltage (1 V/div)
Figure 37. MAXIMUM OUTPUT VOLTAGE vs FREQUENCY
Figure 38. PROPAGATION DELAY RISING EDGE
VOUT Voltage
tpLH = 1.1 s
Overdrive = 100 mV
Time (200 ns/div)
C026
Figure 39. PROPAGATION DELAY FALLING EDGE
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DETAILED DESCRIPTION
OVERVIEW
The OPA192 family of operational amplifiers use e-trim, a method of package-level trim for offset and offset
temperature drift implemented during the final steps of manufacturing after the plastic molding process. This
method minimizes the influence of inherent input transistor mismatch, as well as errors induced during package
molding. The trim communication occurs on the output pin of the standard pinout, and after the trim points are
set, further communication to the trim structure is permanently disabled. Figure 40 shows the simplified diagram
of OPA192 with e-trim.
OPA192
NCH Input
Stage
IN+
36-V
Differential
Front End
Slew
Boost
High
Capacitive Load
Compensation
IN
Output
Stage
VOUT
PCH Input
Stage
e-Trim
Package Level Trim
Figure 40. Simplified Schematic
Unlike previous e-trim op amps, the OPA192 uses a patented two-temperature trim architecture to achieve a very
low offset voltage of 25 µV (max) and low voltage offset drift of 0.5 µV/°C (max) over the full specified
temperature range. This level of precision performance at wide supply voltages makes these amplifiers useful for
high-impedance industrial sensors, filters, and high-voltage data acquisition.
As with all amplifiers, applications with noisy or high-impedance power supplies require decoupling capacitors
close to the device pins. In most cases, 0.1-μF capacitors are adequate.
OPERATING VOLTAGE
The OPA192 is specified for operation from 4.5 V to 36 V (±2.25 V to ±18 V). Many specifications apply from
–40°C to +125°C. Parameters that can exhibit significant variance with regard to operating voltage or
temperature are presented in the Typical Characteristics.
CAUTION
Supply voltages larger than 40 V can permanently damage the device; see the
Absolute Maximum Ratings.
In addition, key parameters are assured over the specified temperature of TA = –40°C to +125°C. Parameters
that vary significantly with operating voltage or temperature are shown in the Typical Characteristics.
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EMI REJECTION
The OPA192 uses integrated electromagnetic interference (EMI) filtering to reduce the effects of EMI from
sources such as wireless communications and densely-populated boards with a mix of analog signal chain and
digital components. EMI immunity can be improved with circuit design techniques; the OPA192 benefits from
these design improvements. Texas Instruments has developed the ability to accurately measure and quantify the
immunity of an operational amplifier over a broad frequency spectrum extending from 10 MHz to 6 GHz.
Figure 41 shows the results of this testing on the OPA192. Table 2 shows the EMIRR IN+ values for the OPA192
at particular frequencies commonly encountered in real-world applications. Applications listed in Table 2 may be
centered on or operated near the particular frequency shown. Detailed information can also be found in the
Application Report SBOA128, EMI Rejection Ratio of Operational Amplifiers, available for download from
www.ti.com.
160.0
140.0
PRF = -10 dBm
VSUPPLY = ±18 V
VCM = 0 V
EMIRR IN+ (dB)
120.0
100.0
80.0
60.0
40.0
20.0
0.0
10M
100M
1G
10G
Frequency (Hz)
C017
Figure 41. EMIRR Testing
Table 2. OPA192 EMIRR IN+ for Frequencies of Interest
16
FREQUENCY
APPLICATION OR ALLOCATION
EMIRR IN+
400 MHz
Mobile radio, mobile satellite, space operation, weather, radar, ultra-high frequency
(UHF) applications
44.1 dB
900 MHz
Global system for mobile communications (GSM) applications, radio
communication, navigation, GPS (to 1.6 GHz), GSM, aeronautical mobile, UHF
applications
52.8 dB
1.8 GHz
GSM applications, mobile personal communications, broadband, satellite, L-band
(1 GHz to 2 GHz)
61.0 dB
2.4 GHz
802.11b, 802.11g, 802.11n, Bluetooth®, mobile personal communications,
industrial, scientific and medical (ISM) radio band, amateur radio and satellite, Sband (2 GHz to 4 GHz)
69.5 dB
3.6 GHz
Radiolocation, aero communication and navigation, satellite, mobile, S-band
88.7 dB
5.0 GHz
802.11a, 802.11n, aero communication and navigation, mobile communication,
space and satellite operation, C-band (4 GHz to 8 GHz)
105.5 dB
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ELECTRICAL OVERSTRESS
Designers often ask questions about the capability of an operational amplifier to withstand electrical overstress
(EOS). These questions tend to focus on the device inputs, but may involve the supply voltage pins or even the
output pin. Each of these different pin functions have electrical stress limits determined by the voltage breakdown
characteristics of the particular semiconductor fabrication process and specific circuits connected to the pin.
Additionally, internal electrostatic discharge (ESD) protection is built into these circuits to protect them from
accidental ESD events both before and during product assembly.
Having a good understanding of this basic ESD circuitry and its relevance to an electrical overstress event is
helpful. See Figure 42 for an illustration of the ESD circuits contained in the OPAx192 (indicated by the dashed
line area). The ESD protection circuitry involves several current-steering diodes connected from the input and
output pins and routed back to the internal power-supply lines, where the diodes meet at an absorption device or
the power-supply ESD cell, internal to the operational amplifier. This protection circuitry is intended to remain
inactive during normal circuit operation.
TVS
+
±
RF
+VS
VDD
R1
IN-
100 Ÿ
RS
IN+
100 Ÿ
OPA192
Power-Supply
ESD Cell
ID
VIN
RL
+
±
VSS
+
±
-VS
TVS
Figure 42. Equivalent Internal ESD Circuitry Relative to a Typical Circuit Application
An ESD event is very short in duration and very high voltage (for example, 1 kV, 100 ns), whereas an EOS event
is long duration and lower voltage (for example, 50 V, 100 ms). The ESD diodes are designed for out-of-circuit
ESD protection (that is, during assembly, test, and storage of the device before it is soldered to the PCB). During
an ESD event, the ESD signal is passed through the ESD steering diodes to an absorption circuit (labeled ESD
power-supply circuit). The ESD absorption circuit clamps the supplies to a safe level.
While this behavior is necessary for out-of-circuit protection, it causes excessive current and damage if activated
in-circuit. A transient voltage suppressors (TVS) can be used to prevent against damage caused by turning on
the ESD absorption circuit during an in-circuit ESD event. Using the appropriate current limiting resistors and
TVS diodes allows for the use of device ESD diodes to protect against EOS events.
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COMMON-MODE VOLTAGE RANGE
The OPA192 is a 36-V, true rail-to-rail input operational amplifier with an input common-mode range that extends
100 mV beyond either supply rail. This is achieved with paralleled complementary N-channel and P-channel
differential input pairs, as shown in Figure 43. The N-channel pair is active for input voltages close to the positive
rail, typically (V+) – 3 V to 100 mV above the positive supply. The P-channel pair is active for inputs from 100 mV
below the negative supply to approximately (V+) – 1.5 V. There is a small transition region, typically (V+) –3 V to
(V+) – 1.5 V) in which both input pairs are on. This transition region can vary modestly with process variation,
and within this region PSRR, CMRR, offset voltage, offset drift, noise and THD performance may be degraded
compared to operation outside this region.
+Vsupply
IS1
VINPCH1
PCH2
NCH4
NCH3
VIN+
e-TrimTM
FUSE BANK
VOS TRIM
VOS DRIFT TRIM
-Vsupply
Figure 43. Rail-to-Rail Input Stage
To achieve the best performance for two-stage rail-to-rail input amplifiers, avoid the transition region when
possible. The OPA192 uses a precision trim for both the N-channel and P-channel regions. This technique
enables significantly lower levels of offset than previous-generation devices, causing variance in the transition
region of the input stages to appear exaggerated relative to offset over the full common-mode range, as shown in
Figure 44.
P-Channel
Region
Transition
Region
N-Channel
Region
P-Channel
Region
100
0
-100
OPA192 e-Trim
Input Offset Voltage vs Vcm
-200
-300
-15.0
N-Channel
Region
200
Input Offset Voltage (uV)
Input Offset Voltage (uV)
200
Transition
Region
-14.0
Y11.0 12.0 13.0
Common Mode Voltage
14.0
15.0
100
0
-100
-200
-300
-15.0
Input Offset Voltage vs Vcm
without e-Trim Input
-14.0
Y11.0 12.0 13.0
Common Mode Voltage
14.0
15.0
Figure 44. Common-Mode Transition vs Standard Rail-to-Rail Amplifiers
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INPUT PROTECTION CIRCUITRY
The OPA192 uses a unique input architecture to eliminate the need for input protection diodes but still provides
robust input protection under transient conditions. Conventional input diode protection schemes shown in
Figure 45 can be activated by fast transient step responses and can introduce signal distortion and settling time
delays due to alternate current paths, as shown in Figure 46. For low-gain circuits, these fast-ramping input
signals forward-bias back-to-back diodes causing an increase in input current and resulting in extended settling
time, as seen in Figure 47.
V+
V+
VIN+
VIN+
VOUT
VOUT
OPA192
36 V
~0.7 V
VIN
VIN
OPA192 Provides Full 36-V
Differential Input Range
Conventional Input Protection
Limits Differential Input Range
V
V
Figure 45. OPA192 Input Protection Does Not Limit Differential Input Capability
Vn=+10V
RFILT
+10V
Ron_mux
Sn
CFILT
1
D
CS
1
2
+10V
~-9.3V
CD
Vin-
Vn+1=- R
FILT
10V
-10V
Sn+
Ron_mux
2
~0.7V
Vout
1
CS
CFILT
Idiode_transient
-10V
Vin+
Buffer Amplifier
Simplified Mux Model
Input Low Pass Filter
Figure 46. Back-to-Back Diodes Create Settling Issues
Output Delta From Final Value (mV)
100
Standard Input Diode Structure
Extends Settling Time
80
60
40
0.1% Settling = ±10 mV
20
0
±20
OPA192 Input Structure
Offers Fast Settling
±40
±60
±80
±100
0
5
10
15
20
25
30
35
40
45
50
55
Time (s)
60
C040
Figure 47. OPA192 Protection Circuit Maintains Fast-Settling Transient Response
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The OPA192 family of operational amplifiers provides a true high-impedance differential input capability for highvoltage applications. This patented input protection architecture does not introduce additional signal distortion or
delayed settling time, making it an optimal op amp for multichannel, high-switched, input applications. The
OPA192 can tolerate a maximum differential swing (voltage between inverting and noninverting terminal of the
op amp) of up to 36 V, making it suitable for use as a comparator or in applications with fast-ramping input
signals, such as multiplexed data-acquisition systems, as shown in Figure 55.
PHASE REVERSAL PROTECTION
The OPA192 family has internal phase-reversal protection. Many op amps exhibit a phase reversal when the
input is driven beyond its linear common-mode range. This condition is most often encountered in noninverting
circuits when the input is driven beyond the specified common-mode voltage range, causing the output to
reverse into the opposite rail. The OPA192 is a rail-to-rail input op amp; therefore, the common-mode range can
extend up to the rails. Input signals beyond the rails do not cause phase reversal; instead, the output limits into
the appropriate rail. This performance is shown in Figure 48.
VIN
+ 18 V
±
5 V/div
OPA192
+
+
±
37 VPP ± 18 V
Sine Wave
(±18.5V)
VOUT
VOUT
Time (200 s/div)
C011
Figure 48. No Phase Reversal
THERMAL PROTECTION
Vout
The internal power dissipation of any amplifier causes its internal (junction) temperature to rise. This
phenomenon is called self heating. The absolute maximum junction temperature of the OPA192 is +150°C.
Exceeding this temperature causes damage to the device. The OPA192 has a thermal protection feature that
prevents damage from self heating. The protection works by monitoring the temperature of the device and
turning off the op amp output drive for temperatures above +140°C. Figure 49 shows an application example for
the OPA192 that will have significant self heating (+159°C) because of its power dissipation (0.81 W). Thermal
calculations indicate that for an ambient temperature of +65°C the device junction temperature should reach
+187°C. The actual device, however, turns off the output drive to maintain a safe junction temperature. Figure 49
depicts how the circuit behaves during thermal protection. During normal operation, the device acts as a buffer
so the output is 3 V. When self heating causes the device junction temperature to increase above +140°C, the
thermal protection forces the output to a high-impedance state and the output is pulled to ground through resistor
RL.
+
+
-
Vin
3V dc
OPA192
3V
Normal
Operation
Output
High-Z
0V
150º C
Iout = 30mA
+
3V
-
Temperature
-
Ta= 65C
Pd = 0.81W
ja = 116º C/W
Tj = 116º C/W x 0.81W + 65º C
Tj = 159º C (expected)
RL 100Ÿ
+30V
140º C
Figure 49. Thermal Protection
20
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SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
OVERLOAD RECOVERY
Overload recovery is defined as the time it takes for the op amp output to recover from a saturated state to a
linear state. The output devices of the op amp enter a saturation region when the output voltage exceeds the
rated operating voltage, either due to the high input voltage or the high gain. After the device enters the
saturation region, the charge carriers in the output devices require time to return back to the linear state. After
the charge carriers return back to the linear state, the device begins to slew at the specified slew rate. Thus, the
propagation delay in case of an overload condition is the sum of the overload recovery time and the slew time.
The overload recovery time for the OPAx192 is approximately 200 ns.
GENERAL LAYOUT GUIDELINES
For best operational performance of the device, use good printed circuit board (PCB) layout practices, including:
• Connect low-ESR, 0.1-µF ceramic bypass capacitors between each supply pin and ground, placed as
close to the device as possible. A single bypass capacitor from V+ to ground is applicable to singlesupply applications.
• In order to reduce parasitic coupling, run the input traces as far away from the supply lines as possible.
• A ground plane helps distribute heat and reduces EMI noise pickup.
• Place the external components as close to the device as possible. This configuration prevents parasitic
errors (such as the Seebeck effect) from occurring.
CAPACITIVE LOAD AND STABILITY
The OPA192 features a patented output stage capable of driving large capacitive loads, and in a unity-gain
configuration, can directly drive up to 1 nF of pure capacitive load. Increasing the gain enhances the ability of the
amplifier to drive greater capacitive loads, as shown in Figure 50 and Figure 51. The particular op amp circuit
configuration, layout, gain, and output loading are some of the factors to consider when establishing whether an
amplifier will be stable in operation.
50
50
RII =NŸ
1 kO
R
RFF =NŸ
1 kO
45
G = -1
35
+
±
±
+
VIN
±
30
40
RISO
CL
± 18 V
25
35
+
VIN
RL
25
RISO = 00
15
RISO = 2525
15
10
RISO = 50 50
10
20
RISO = 0 0
RISO = 25
25
RISO = 50
50
5
0
0
10p
100p
1n
Capacitive Load (F)
10p
100p
1n
Capacitive Load (F)
C013
Figure 50. Small-Signal Overshoot vs Capacitive
Load (100-mV output step)
CL
± 18 V
±
30
20
5
RISO
OPA192
+
OPA192
Overshoot (%)
Overshoot (%)
40
G = +1
+ 18 V
45
+ 18 V
C013
Figure 51. Small-Signal Overshoot vs Capacitive
Load (100-mV output step)
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OPA2192
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For additional drive capability in unity-gain configurations, capacitive load drive can be improved by inserting a
small (10 Ω to 20 Ω) resistor, RISO, in series with the output, as shown in Figure 52. This resistor significantly
reduces ringing while maintaining dc performance for purely capacitive loads. However, if there is a resistive load
in parallel with the capacitive load, a voltage divider is created, introducing a gain error at the output and slightly
reducing the output swing. The error introduced is proportional to the ratio RISO / RL, and is generally negligible at
low output levels. A high capacitive load drive makes the OPA192 well suited for applications such as reference
buffers, MOSFET gate drives, and cable-shield drives. The circuit shown in Figure 52 uses an isolation resistor
(RISO) to stabilize the output of an op amp. RISO modifies the open-loop gain of the system for increased phase
margin, and results using the OPA192 are summarized in Table 3. For additional information on techniques to
optimize and design using this circuit, TI Precision Design TIDU032 details complete design goals, simulation,
and test results.
+Vs
Vout
Riso
+
Vin
Cload
+
±
-Vs
Figure 52. Extending Capacitive Load Drive with the OPA192
Table 3. OPA192 Capacitive Load Drive Solution Using Isolation Resistor Comparison of Calculated and
Measured Results
Capacitive Load
100 pF
1000 pF
0.01 µF
0.1 µF
1 µF
Phase Margin
45°
60°
45°
60°
45°
60°
45°
60°
45°
60°
RISO (Ω)
47.0
360.0
24.0
100.0
20.0
51.0
6.2
15.8
2.0
4.7
Measured
Overshoot (%)
23.2 8.6
10.4
22.5
9.0
22.1
8.7
23.1
8.6
21.0
8.6
Calculated PM
45.1°
58.1°
45.8°
59.7°
46.1°
60.1°
45.2°
60.2°
47.2°
60.2°
For step-by-step design procedure, circuit schematics, bill of materials, PCB files, simulation results, and test
results, refer to TI Precision Design TIDU032 - Capacitive Load Drive Solution using an Isolation Resistor
22
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OPA4192
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SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
APPLICATION INFORMATION
TI PRECISION DESIGNS
The
OPA192
is
featured
in
several
TI
Precision
Designs,
available
online
at
http://www.ti.com/ww/en/analog/precision-designs/. TI Precision Designs are analog solutions created by TI’s
precision analog applications experts and offer the theory of operation, component selection, simulation,
complete PCB schematic and layout, bill of materials, and measured performance of many useful circuits.
SLEW RATE LIMIT FOR INPUT PROTECTION
In control systems for valves or motors, abrupt changes in voltages or currents can cause mechanical damages.
By controlling the slew rate of the command voltages into the drive circuits, the load voltages can ramp up and
down at a safe rate. For symmetrical slew-rate applications (positive slew rate equals negative slew rate) one
additional op amp provides slew-rate control for a given analog gain stage. The unique input protection and high
output current and slew rate of the OPA192 make it an optimal amplifier to achieve slew rate control for both
dual- and single-supply systems. Figure 53 shows the OPA192 in a slew-rate limit design.
Op Amp Gain Stage
Slew Rate Limiter
C1
470 nF
R1
1.69 kŸ
VEE
+
VIN
VEE
R2
1.6 MŸ
OPA192
V+
OPA192
V+
VOUT
VCC
RL
10 kŸ
VCC
Figure 53. Slew Rate Limiter Uses One Op Amp
For step-by-step design procedure, circuit schematics, bill of materials, PCB files, simulation results, and test
results, refer to TI Precision Design TIDU026 - Slew Rate Limiter Uses One Op Amp
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: OPA192 OPA2192 OPA4192
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OPA2192
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SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
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PRECISION REFERENCE BUFFER
The OPA192 features high output current drive capability and low input offset voltage, making it an excellent
reference buffer to provide an accurate buffered output with ample drive current for transients. For the 10-µF
ceramic capacitor shown in Figure 54, RISO, a 37.4-Ω isolation resistor, provides separation of two feedback
paths for optimal stability. Feedback path number one is through RF and is directly at the output, VOUT. Feedback
path number two is through RFx and CF and is connected at the output of the op amp. The optimized stability
components shown for the 10-µF load give a closed-loop signal bandwidth at VOUT of 4 kHz, while still providing
a loop gain phase margin of 89°. Any other load capacitances require recalculation of the stability components:
RF, RFx, CF, and RISO.
RF
1 kŸ
RFx
10 kŸ
CF
39 nF
RISO
37.4 Ÿ
OPA192
V+
VOUT
VREF
2.5 V
CL
10 µF
VCC
Figure 54. Precision Reference Buffer
24
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SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
16-BIT PRECISION MULTIPLEXED DATA-ACQUISITION SYSTEM
Figure 55 shows a 16-bit, differential, 4-channel, multiplexed data-acquisition system. This example is typical in
industrial applications that require low distortion and a high-voltage differential input. The circuit uses the
ADS8864, a 16-bit, 400-kSPS successive-approximation-resistor (SAR) analog-to-digital converter (ADC), along
with a precision, high-voltage, signal-conditioning front end, and a 4-channel differential multiplexer (mux). This
TI Precision Design details the process for optimizing the precision, high-voltage, front-end drive circuit using the
OPA192 and OPA140 to achieve excellent dynamic performance and linearity with the ADS8864.
1
2
Very Low Output Impedance
Input-Filter Bandwidth
±20-V,
10-kHz
Sine Wave
3
High-Impedance Inputs
No Differential Input Clamps
Fast Settling-Time Requirements
Attenuate High-Voltage Input Signal
Fast-Settling Time Requirements
Stability of the Input Driver
Attenuate ADC Kickback Noise
VREF Output: Value and Accuracy
Low Temp and Long-Term Drift
Voltage
Reference
CH0+
OPA192
+
4
RC Filter
Buffer
RC Filter
Reference Driver
+
OPA192
CH0-
Gain
Network
OPA192
Gain
Network
+
4:2
Mux
REFP
+
OPA192
+
CH3+
OPA192
VINP
+
Antialiasing
Filter
SAR
ADC
+
VINM
OPA192
CH3-
CONV
Gain
Network
±20-V,
10-kHz
Sine Wave
OPA140
Gain
Network
n
16 Bits
400 kSPS
High-Voltage Level Translation
VCM
High-Voltage Multiplexed Input
REF3240
Voltage
Divider
OPA350
VCM Generation Circuit
Counter
n
Shmidtt
Trigger
Delay
Digital Counter For Multiplexer
5
Fast logic transition
Figure 55. OPA192 in 16-Bit, 400-kSPS, 4-Channel, Multiplexed Data Acquisition System
for High-Voltage Inputs with Lowest Distortion
For step-by-step design procedure, circuit schematics, bill of materials, PCB files, simulation results, and test
results, refer to TI Precision Design TIDU181 - 16-bit, 400-kSPS, 4-Channel, Multiplexed Data Acquisition
System for High Voltage Inputs with Lowest Distortion
TINA-TI™ (Free Download Software)
TINA™ is a simple, powerful, and easy-to-use circuit simulation program based on a SPICE engine. TINA-TI is a
free, fully-functional version of the TINA software, preloaded with a library of macro models in addition to a range
of both passive and active models. TINA-TI provides all the conventional dc, transient, and frequency domain
analysis of SPICE, as well as additional design capabilities.
Available as a free download from the Analog eLab Design Center, TINA-TI offers extensive post-processing
capability that allows users to format results in a variety of ways. Virtual instruments offer the ability to select
input waveforms and probe circuit nodes, voltages, and waveforms, creating a dynamic quick-start tool.
NOTE
These files require that either the TINA software (from DesignSoft™) or TINA-TI software
be installed. Download the free TINA-TI software from the TINA-TI folder.
Copyright © 2013–2014, Texas Instruments Incorporated
Product Folder Links: OPA192 OPA2192 OPA4192
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OPA2192
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SBOS620A – DECEMBER 2013 – REVISED JANUARY 2014
www.ti.com
REVISION HISTORY
NOTE: Page numbers for previous revisions may differ from page numbers in the current version.
Changes from Original (December 2013) to Revision A
Page
•
Changed first paragraph of 16-BIT PRECISION MULTIPLEXED DATA-ACQUISITION SYSTEM section ....................... 25
•
Changed Figure 55 and title ............................................................................................................................................... 25
•
Changed TIDU181 reference design title ........................................................................................................................... 25
26
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PACKAGE OPTION ADDENDUM
www.ti.com
10-Jan-2014
PACKAGING INFORMATION
Orderable Device
Status
(1)
Package Type Package Pins Package
Drawing
Qty
Eco Plan
Lead/Ball Finish
MSL Peak Temp
(2)
(6)
(3)
Op Temp (°C)
Device Marking
(4/5)
OPA192ID
ACTIVE
SOIC
D
8
75
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA192IDBVR
PREVIEW
SOT-23
DBV
5
3000
TBD
Call TI
Call TI
-40 to 125
OPA192IDBVT
PREVIEW
SOT-23
DBV
5
250
TBD
Call TI
Call TI
-40 to 125
OPA192IDGKR
PREVIEW
VSSOP
DGK
8
2500
TBD
Call TI
Call TI
-40 to 125
OPA192IDGKT
PREVIEW
VSSOP
DGK
8
80
TBD
Call TI
Call TI
-40 to 125
OPA192IDR
ACTIVE
SOIC
D
8
2500
Green (RoHS
& no Sb/Br)
CU NIPDAU
Level-2-260C-1 YEAR
-40 to 125
OPA192
OPA192
(1)
The marketing status values are defined as follows:
ACTIVE: Product device recommended for new designs.
LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect.
NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design.
PREVIEW: Device has been announced but is not in production. Samples may or may not be available.
OBSOLETE: TI has discontinued the production of the device.
(2)
Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability
information and additional product content details.
TBD: The Pb-Free/Green conversion plan has not been defined.
Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that
lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes.
Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between
the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above.
Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight
in homogeneous material)
(3)
MSL, Peak Temp. - The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature.
(4)
There may be additional marking, which relates to the logo, the lot trace code information, or the environmental category on the device.
(5)
Multiple Device Markings will be inside parentheses. Only one Device Marking contained in parentheses and separated by a "~" will appear on a device. If a line is indented then it is a continuation
of the previous line and the two combined represent the entire Device Marking for that device.
(6)
Lead/Ball Finish - Orderable Devices may have multiple material finish options. Finish options are separated by a vertical ruled line. Lead/Ball Finish values may wrap to two lines if the finish
value exceeds the maximum column width.
Addendum-Page 1
Samples
PACKAGE OPTION ADDENDUM
www.ti.com
10-Jan-2014
Important Information and Disclaimer:The information provided on this page represents TI's knowledge and belief as of the date that it is provided. TI bases its knowledge and belief on information
provided by third parties, and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. TI has taken and
continues to take reasonable steps to provide representative and accurate information but may not have conducted destructive testing or chemical analysis on incoming materials and chemicals.
TI and TI suppliers consider certain information to be proprietary, and thus CAS numbers and other limited information may not be available for release.
In no event shall TI's liability arising out of such information exceed the total purchase price of the TI part(s) at issue in this document sold by TI to Customer on an annual basis.
Addendum-Page 2
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Jan-2014
TAPE AND REEL INFORMATION
*All dimensions are nominal
Device
OPA192IDR
Package Package Pins
Type Drawing
SOIC
D
8
SPQ
Reel
Reel
A0
Diameter Width (mm)
(mm) W1 (mm)
2500
330.0
12.4
Pack Materials-Page 1
6.4
B0
(mm)
K0
(mm)
P1
(mm)
5.2
2.1
8.0
W
Pin1
(mm) Quadrant
12.0
Q1
PACKAGE MATERIALS INFORMATION
www.ti.com
10-Jan-2014
*All dimensions are nominal
Device
Package Type
Package Drawing
Pins
SPQ
Length (mm)
Width (mm)
Height (mm)
OPA192IDR
SOIC
D
8
2500
367.0
367.0
35.0
Pack Materials-Page 2
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