Fairchild FQB33N10LTM N-channel qfet mosfet Datasheet

FQB33N10L
N-Channel QFET® MOSFET
100 V, 33 A, 52 mΩ
Features
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
• 33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V,
ID = 16.5 A
• Low Gate Charge (Typ. 30 nC)
• Low Crss (Typ. 70 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
D
G
G
D2-PAK
S
S
Absolute Maximum Ratings
Symbol
VDSS
TC = 25°C unless otherwise noted
FQB33N10LTM
100
Parameter
Drain-Source Voltage
- Continuous (TC = 25°C)
Drain Current
ID
- Continuous (TC = 100°C)
Unit
V
33
A
23
A
132
A
IDM
Drain Current
VGSS
Gate-Source Voltage
EAS
Single Pulsed Avalanche Energy
(Note 2)
IAR
Avalanche Current
(Note 1)
33
A
EAR
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TA = 25°C) *
(Note 1)
12.7
6.0
3.75
mJ
V/ns
W
127
0.85
-55 to +175
W
W/°C
°C
300
°C
dv/dt
PD
- Pulsed
(Note 1)
(Note 3)
Power Dissipation (TC = 25°C)
TJ, TSTG
TL
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8" from case for 5 seconds
± 20
V
430
mJ
Thermal Characteristics
Symbol
RJC
RJA
FQB33N10LTM
Parameter
Thermal Resistance, Junction to Case, Max
1.18
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
62.5
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.
©2008 Fairchild Semiconductor Corporation
FQB33N10L Rev. C1
1
Unit
oC/W
40
www.fairchildsemi.com
FQB33N10L — N-Channel QFET® MOSFET
October 2013
Device Marking
Device
FQB33N10LTM
FQB33N10L
Electrical Characteristics
Symbol
Package
D2-PAK
Reel Size
330mm
Tape Width
24mm
Quantity
800
TC = 25°C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max
Unit
100
--
--
V
--
0.09
--
V/°C
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage
VGS = 0 V, ID = 250 µA
∆BVDSS
/
∆TJ
Breakdown Voltage Temperature
Coefficient
ID = 250 µA, Referenced to 25°C
IDSS
Zero Gate Voltage Drain Current
VDS = 100 V, VGS = 0 V
--
--
1
µA
VDS = 80 V, TC = 150°C
--
--
10
µA
IGSSF
Gate-Body Leakage Current, Forward
VGS = 20 V, VDS = 0 V
--
--
100
nA
IGSSR
Gate-Body Leakage Current, Reverse
VGS = -20 V, VDS = 0 V
--
--
-100
nA
On Characteristics
VGS(th)
Gate Threshold Voltage
VDS = VGS, ID = 250 µA
1.0
--
2.0
V
RDS(on)
Static Drain-Source
On-Resistance
VGS = 10 V, ID = 16.5 A
VGS = 5 V, ID = 16.5 A
--
0.039
0.043
0.052
0.055
Ω
gFS
Forward Transconductance
VDS = 30 V, ID = 16.5 A
--
27
--
S
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
--
1250
1630
pF
--
305
400
pF
--
70
90
pF
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
VDD = 50 V, ID = 33 A,
RG = 25 Ω
(Note 4)
VDS = 80 V, ID = 33 A,
VGS = 5 V
(Note 4)
--
17
45
ns
--
470
950
ns
--
70
150
ns
--
120
250
ns
--
30
40
nC
--
4.7
--
nC
--
16
--
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS
Maximum Continuous Drain-Source Diode Forward Current
--
--
33
A
ISM
--
--
132
A
VSD
Maximum Pulsed Drain-Source Diode Forward Current
VGS = 0 V, IS = 33 A
Drain-Source Diode Forward Voltage
--
--
1.5
V
trr
Reverse Recovery Time
--
90
--
ns
Qrr
Reverse Recovery Charge
VGS = 0 V, IS = 33 A,
dIF / dt = 100 A/µs
--
0.26
--
µC
Notes:
1. Repetitive Rating : Pulse width limited by maximum junction temperature
2. L = 0.59mH, IAS = 33A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C
3. ISD ≤ 33A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Essentially independent of operating temperature
©2008 Fairchild Semiconductor Corporation
FQB33N10L Rev. C1
2
www.fairchildsemi.com
FQB33N10L — N-Channel QFET® MOSFET
Package Marking and Ordering Information
10
Top :
ID, Drain Current [A]
ID, Drain Current [A]
2
VGS
10.0 V
8.0 V
6.0 V
5.0 V
4.5 V
4.0 V
3.5 V
Bottom : 3.0 V
2
10
1
10
1
10
175℃
25℃
0
10
-55℃
※ Notes :
1. VDS = 30V
2. 250μs Pulse Test
※ Notes :
1. 250μs Pulse Test
2. TC = 25℃
0
-1
10
-1
10
0
10
1
10
0
10
2
4
6
8
10
VGS, Gate-Source Voltage [V]
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
Figure 2. Transfer Characteristics
0.20
2
10
0.16
IDR , Reverse Drain Current [A]
RDS(ON) [Ω ],
Drain-Source On-Resistance
VGS = 5V
0.12
VGS = 10V
0.08
0.04
0
10
175℃
25℃
※ Notes :
1. VGS = 0V
2. 250μs Pulse Test
※ Note : TJ = 25℃
-1
0.00
0
30
60
90
10
120
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
ID, Drain Current [A]
VSD, Source-Drain voltage [V]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
3600
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
10
VGS, Gate-Source Voltage [V]
3000
2400
Capacitance [pF]
1
10
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
Ciss
1800
Coss
1200
Crss
600
VDS = 50V
8
VDS = 80V
6
4
2
※ Note : ID = 33A
0
-1
10
0
0
10
0
1
10
Figure 5. Capacitance Characteristics
©2008 Fairchild Semiconductor Corporation
FQB33N10L Rev. C1
10
20
30
40
50
QG, Total Gate Charge [nC]
VDS, Drain-Source Voltage [V]
Figure 6. Gate Charge Characteristics
3
www.fairchildsemi.com
FQB33N10L — N-Channel QFET® MOSFET
Typical Characteristics
(Continued)
1.2
3.0
RDS(ON) , (Normalized)
Drain-Source On-Resistance
BV DSS , (Normalized)
Drain-Source Breakdown Voltage
2.5
1.1
1.0
※ Notes :
1. VGS = 0 V
2. ID = 250 μA
0.9
0.8
-100
-50
0
50
100
150
2.0
1.5
1.0
※ Notes :
1. VGS = 10 V
2. ID = 16.5 A
0.5
0.0
-100
200
-50
0
50
100
150
200
o
o
TJ, Junction Temperature [ C]
TJ, Junction Temperature [ C]
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. On-Resistance Variation
vs. Temperature
35
Operation in This Area
is Limited by R DS(on)
2
25
100 µ s
ID , Drain Current [A]
ID , Drain Current [A]
10
30
1 ms
10 ms
10
1
DC
※ Notes :
20
15
10
o
1. TC = 25 C
10
10
5
o
0
2. TJ = 175 C
3. Single Pulse
0
10
1
0
25
2
10
50
ZJC(t), Thermal Response [oC/W]
Figure 9. Maximum Safe Operating Area
10
75
100
125
150
175
TC, Case Temperature [℃]
VDS, Drain-Source Voltage [V]
Figure 10. Maximum Drain Current
vs. Case Temperature
0
D = 0 .5
※ N otes :
1 . Z θ J C ( t ) = 1 . 1 8 ℃ /W M a x .
2 . D u t y F a c t o r , D = t 1 /t 2
3 . T J M - T C = P D M * Z θ J C( t )
0 .2
0 .1
10
-1
0 .0 5
PDM
0 .0 2
t1
0 .0 1
t2
s in g le p u ls e
10
-2
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
t1 , S q u a r e W a v e P u ls e D u r a tio n [s e c ]
Figure 11. Transient Thermal Response Curve
©2008 Fairchild Semiconductor Corporation
FQB33N10L Rev. C1
4
www.fairchildsemi.com
FQB33N10L — N-Channel QFET® MOSFET
Typical Characteristics
FQB33N10L — N-Channel QFET® MOSFET
Figure 12. Gate Charge Test Circuit & Waveform
VGS
Same Type
as DUT
50KΩ
200nF
12V
Qg
10V
300nF
VDS
VGS
Qgs
Qgd
DUT
IG = const.
3mA
Charge
Figure 13. Resistive Switching Test Circuit & Waveforms
VDS
RG
RL
VDS
90%
VDD
VGS
VGS
DUT
V
10V
GS
10%
td(on)
tr
td(off)
t on
tf
t off
Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms
BVDSS
1
EAS = ---- L IAS2 -------------------2
BVDSS - VDD
L
VDS
BVDSS
IAS
ID
RG
V
10V
GS
GS
VDD
ID (t)
tp
©2008 Fairchild Semiconductor Corporation
FQB33N10L Rev. C1
VDS (t)
VDD
DUT
tp
5
Time
www.fairchildsemi.com
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VSD
VDD
Body Diode
Forward Voltage Drop
©2008 Fairchild Semiconductor Corporation
FQB33N10L Rev. C1
6
www.fairchildsemi.com
FQB33N10L — N-Channel QFET® MOSFET
Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms
FQB33N10L — N-Channel QFET® MOSFET
Mechanical Dimensions
TO-263 2L (D2PAK)
Figure 16. 2LD,TO263, Surface Mount
Package drawings are provided as a service to customers considering Fairchild components. Drawings may change in any manner
without notice. Please note the revision and/or date on the drawing and contact a Fairchild Semiconductor representative to verify or
obtain the most recent revision. Package specifications do not expand the terms of Fairchild’s worldwide terms and conditions, specifically the warranty therein, which covers Fairchild products.
Always visit Fairchild Semiconductor’s online packaging area for the most recent package drawings:
http://www.fairchildsemi.com/package/packageDetails.html?id=PN_TT263-002
Dimension in Millimeters
©2008 Fairchild Semiconductor Corporation
FQB33N10L Rev. C1
7
www.fairchildsemi.com
tm
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Product Status
Definition
Advance Information
Formative / In Design
Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
date. Fairchild Semiconductor reserves the right to make changes at any time without
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No Identification Needed
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
make changes at any time without notice to improve the design.
Obsolete
Not In Production
Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I66
©2008 Fairchild Semiconductor Corporation
FQB33N10L Rev. C1
8
www.fairchildsemi.com
FQB33N10L — N-Channel QFET® MOSFET
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