ISC IRLR3636 N-channel mosfet transistor Datasheet

INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRLR3636, IIRLR3636
·FEATURES
·Static drain-source on-resistance:
RDS(on)≤6.8mΩ
·Enhancement mode:
·100% avalanche tested
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION
·High Speed Power Switching
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
60
V
VGS
Gate-Source Voltage
±16
V
ID
Drain Current-Continuous
99
A
IDM
Drain Current-Single Pulsed
396
A
PD
Total Dissipation @TC=25℃
143
W
Tj
Max. Operating Junction Temperature
175
℃
-55~175
℃
Tstg
Storage Temperature
·THERMAL CHARACTERISTICS
SYMBOL
Rth(j-c)
Rth(j-a)
PARAMETER
Channel-to-case thermal resistance
Channel-to-ambient thermal resistance
isc website:www.iscsemi.cn
1
MAX
UNIT
1.05
℃/W
110
℃/W
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc N-Channel MOSFET Transistor
IRLR3636, IIRLR3636
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
BVDSS
Drain-Source Breakdown Voltage
VGS=0V; ID=250μA
60
VGS(th)
Gate Threshold Voltage
VDS=VGS; ID=100μA
1
RDS(on)
Drain-Source On-Resistance
VGS=10V; ID=50A
IGSS
Gate-Source Leakage Current
VGS= ±16V
IDSS
Drain-Source Leakage Current
VSD
Diode forward voltage
isc website:www.iscsemi.cn
CONDITIONS
MIN
TYP
MAX
UNIT
V
2.5
V
6.8
mΩ
±0.1
μA
VDS=60V; VGS= 0V
20
μA
Is=50A, VGS = 0V
1.3
V
2
isc & iscsemi is registered trademark
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