LRC LDTBG12GPLT1G Bias resistor transistor Datasheet

LESHAN RADIO COMPANY, LTD.
Bias Resistor Transistor
PNP Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
LDTBG12GPLT1G
zApplications
Driver
3
zFeatures
1) High hFE.
300 (Min.) (VCE / IC=2V / 0.5A)
2) Low saturation voltage,
(VCE(sat)=0.4V at IC / IB=500mA / 5mA)
3) Built-in zener diode gives strong protection against
reverse surge by L- load (an inductive load).
•
1
2
SOT-23
We declare that the material of product compliance with
RoHS requirements.
3
COLLECTOR
R1
zStructure
NPN epitaxial planar silicon transistor
(with built-in resistor and zener diode)
1
BASE
R
zAbsolute maximum ratings (Ta=25°C)
Parameter
R=10kΩ
Symbol
Limits
Unit
Collector-base voltage
VCBO
-60 ±10
V
Collector-emitter voltage
VCEO
-60 ±10
V
Emitter-base voltage
VEBO
-5
V
IC
-1
A
Collector current
ICP
∗1
-2
A
0.5
W
Collector power dissipation
PC
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
∗2
2
2
EMITTER
∗1 Pw≤10ms, Duty cycle≤1/2
∗2 When mounted on a 40×40×0.7 mm ceramic board.
DEVICE MARKING AND RESISTOR VALUES
Device
Marking
R1 (K)
R2 (K)
Shipping
LDTBG12GPLT1G
Q8
1
22
3000/Tape & Reel
LDTBG12GPLT3G
Q8
1
22
10000/Tape & Reel
zElectrical characteristics (Ta=25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
BVCBO
-50
−
-70
V
IC=-50µA
Collector-emitter breakdown voltage
BVCEO
-50
−
-70
V
IC=-1mA
Emitter-base breakdown voltage
BVEBO
-5
−
−
V
IE=-720µA
Parameter
Conditions
Collector cutoff current
ICBO
−
−
-0.5
µA
VCB=-40V
Emitter cutoff current
IEBO
-300
−
-580
µA
VEB=-4V
VCE(sat)
−
−
-0.4
V
IC/IB=-500mA/-5mA
DC current transfer ratio
hFE
300
−
−
−
VCE=-2V, I C=-500mA
Emitter-base resistance
R
7
10
13
kΩ
Transition frequency
fT
−
80
−
MHz
Collector-emitter saturation voltage
∗
−
VCE=-5V, IE=−-0.1A,
f=-30MHz
∗ Characteristics of built-in transistor
1/3
LESHAN RADIO COMPANY, LTD.
LDTBG12GPLT1G
zElectrical characteristic curves
10
10k
ICP
2
PW
1
PW
500m
200m
=1
0
m
=1
s∗
00
m
DC
100m
s∗
50m
20m
10m
5m 14W×18l×0.8t(Unit : mm)
When mounted on glass epoxy
2m ∗Single pulse
1m
100m 200m 500m 1
2
5
10
2k
1k
500
200
100
20
20
50
100
10
10m 20m 50m 100m200m500m 1
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
2
5
10
COLLECTOR CURRENT : IC (A)
Fig.2
Safe operating area
10
VCE=5V
2V
1V
50
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1
Ta=25°C
5k
DC CURRENT GAIN : hFE
COLLECTOR CURRENT : IC (A)
5
DC current gain vs. collector
current
Ta=25°C
5
2
1
500m
200m
100m
IC/IB=200
100
50
50m
20m
10m
10m 20m
50m 100m 200m 500m 1
2
5
10
COLLECTOR CURRENT : IC (A)
Fig.3
Collector-emitter saturation
voltage vs. collector current
2/3
LESHAN RADIO COMPANY, LTD.
LDTBG12GPLT1G
SOT-23
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M,1982
2. CONTROLLING DIMENSION: INCH.
A
L
3
1
V
2
A
B
C
D
G
H
J
G
C
D
MIN
0.1102
0.0472
0.0350
0.0150
0.0701
0.0005
INCHES
MAX
0.1197
0.0551
0.0440
0.0200
0.0807
0.0040
0.0034
0.0140
0.0350
0.0830
0.0177
0.0070
0.0285
0.0401
0.1039
0.0236
DIM
B S
H
K
J
K
L
S
V
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.89
1.11
0.37
0.50
1.78
2.04
0.013
0.100
0.085
0.35
0.89
2.10
0.45
0.177
0.69
1.02
2.64
0.60
0.037
0.95
0.037
0.95
0.079
2.0
0.035
0.9
0.031
0.8
inches
mm
3/3
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