Microsemi LX5561LL Ingaas - e-mode phemt low noise amplifier Datasheet

LX5561
®
TM
InGaAs – E-Mode pHEMT Low Noise Amplifier
P RODUCTION D ATA S HEET
The LX5561 is a low noise amplifier
(LNA) for WLAN applications in the
2.4-2.5 GHz frequency range. This
LNA is manufactured with an InGaAs
Enhancement mode pseudomorphic
HEMT (E-pHEMT) process.
It operates with a single positive
voltage supply of 3.3V, with noise
figure of 1.5dB while maintaining
input third order intercept point(IIP3)
of up to +6.5dBm.
The LNA is implemented with bias
circuit and input/output matching circuit
on chip, resulting in simple external
circuit on board. In addition, the onchip bias circuit provides stable
performance of gain, NF and current for
voltage variation compared to a general
resistor-network bias circuit.
The LX5561 is available in a 12-pin
2mm x 2mm micro-lead package
(MLPQ-12L).
BLOCK DIAGRAM
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
ƒ
0.5µm InGaAs E-mode pHEMT
2.4 – 2.5GHz Operation
Single 3.3V Supply
Gain ~ 13.0dB
Noise Figure ~ 1.5dB
Input IP3 ~ +6.5dBm
Input P1dB ~ +2.5dBm
On-Chip Bias Circuit
On-Chip Input/Output Match
2mm x 2mm MLPQ-12L
Low Profile 0.5mm
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KEY FEATURES
DESCRIPTION
APPLICATIONS
ƒ Wireless LAN 802.11b/g
ƒ WiMax
Vdd
Bias
Circuit
RF
Input
Output
Match
Input
Match
RF
Output
IMPORTANT: For the most current data, consult MICROSEMI’s website: http://www.microsemi.com
PRODUCT HIGHLIGHT
LX5561
PACKAGE ORDER INFO
LL
Plastic MLPQ
12 pin
RoHS Compliant / Pb-free
LX5561LL
Note: Available in Tape & Reel. Append the letters
“TR” to the part number. (i.e. LX5561LL-TR)
Copyright © 2006
Rev. 1.0, 2006-12-20
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 1
LX5561
®
TM
InGaAs – E-Mode pHEMT Low Noise Amplifier
P RODUCTION D ATA S HEET
N/C
VDD
DC Supply Voltage, RF Off........................................................................................... 4 V
Drain Current ............................................................................................................ 40 mA
Total Power Dissipation............................................................................................0.15 W
RF Input Power ..................................................................................................... +10 dBm
Operation Ambient Temperature................................................................. -40°C to +85°C
Storage Temperature Range ........................................................................ -65°C to 150°C
Package Peak Temp. for Solder Reflow (40 seconds maximum exposure).... 260°C (+0 -5)
N/C
PACKAGE PIN OUT
10
11
12
N/C
9
1
N/C
RF OUT
8
2
RF IN
N/C
7
3
N/C
5
4
N/C
GND
N/C
Note: Exceeding these ratings could cause damage to the device. All voltages are with respect to
Ground. Currents are positive into, negative out of specified terminal.
6
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ABSOLUTE MAXIMUM RATINGS
LL PACKAGE
(Bottom View)
RoHS / Pb-free NiPdAu Finish
FUNCTIONAL PIN DESCRIPTION
Name
Pin #
Description
RF IN
2
RF input for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
RF OUT
8
RF output for the low noise amplifier. This pin is AC-coupled and does not require a DC-blocking
capacitor.
VDD
12
Supply voltage.
GND
5
Ground.
N/C
1,3,4,6,7,9,
10,11,
Center
Metal
Not Connected. They can be treated either as open pins or connected to ground.
PACKAGE DATA
Copyright © 2006
Rev. 1.0, 2006-12-20
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 2
LX5561
®
TM
InGaAs – E-Mode pHEMT Low Noise Amplifier
P RODUCTION D ATA S HEET
Parameter
Symbol
Application Frequency Range
Small-Signal Gain
Noise Figure
Input 3rd Order Intercept Point
Input P1dB
Input Return Loss
Output Return Loss
Supply Voltage
Supply Current
f
S21
NF
IIP3
IP1dB
S11
S22
VDD
IDD
Test Conditions
Min
2.4
Freq. 1 = 2.412GHz, Freq. 2 = 2.432GHz
Freq. = 2.45GHz
LX5561
Typ
13.0
1.5
6.5
2.5
12
12
3.3
10.5
Max
2.5
1.8
Units
GHz
dB
dB
dBm
dBm
dB
dB
V
mA
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ELECTRICAL CHARACTERISTICS
Test conditions: VDD = 3.3V, IDD = 10.5mA, TA = +25°C (Room Temperature)
ELECTRICALS
Copyright © 2006
Rev. 1.0, 2006-12-20
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 3
LX5561
InGaAs – E-Mode pHEMT Low Noise Amplifier
®
TM
P RODUCTION D ATA S HEET
S12
S21
3.0V
S22
20
15
10
14
0
-10
3.3V
3.6V
-40°C
13
S21 (dB)
S11, S12, S21, S22 (dB)
S11
GAIN OVER TEMP
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S-PARAMETER
+25°C
12
-20
+85°C
11
-30
10
-40
0
1
2
3
4
5
6
2.0
7
2.1
2.2
2.3
2.4
2.5
2.6
2.7
2.8
2.9
3.0
Frequency (GHz)
Frequency (GHz)
Typical S-Parameter Data at Room Temperature
(Vdd = 3.3V, Idd = 10.5mA at Room Temperature)
NOISE FIGURE OVER TEMP
3.0V
3.3V
CURRENT OVER TEMP
-40°C
3.6V
+25°C
+85°C
15
14
+85°C
13
Idd (mA)
Noise Figure (dB)
16
2.1
2
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1
0.9
2.30
+25°C
12
11
10
9
8
7
-40°C
6
3
2.40
2.50
3.1
3.2
3.3
2.60
3.4
3.5
3.6
Vdd (V)
Frequency (GHz)
INPUT P1DB (+25°C)
3.0V
3.3V
INPUT IP3 (+25°C)
3.6V
3.0V
6
3.3V
3.6V
11
10
5
9
IIP3 (dBm)
3
2
8
GRAPHS
IP1dB (dBm)
4
7
6
5
1
4
0
2.30
2.40
2.50
2.60
3
2.30
Frequency (GHz)
Copyright © 2006
Rev. 1.0, 2006-12-20
2.40
2.50
2.60
Frequency (GHz)
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 4
LX5561
InGaAs – E-Mode pHEMT Low Noise Amplifier
®
TM
P RODUCTION D ATA S HEET
Gain
Idd
20
40
15
35
10
30
5
25
0
20
-5
15
-10
10
-15
Idd (mA)
Pout(dBm), Gain(dB)
Pout
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POWER SWEEP @ 2.45GHZ
5
-20 -18 -16 -14 -12 -10 -8
-6
-4
-2
0
2
4
6
8
10 12
Pin (dBm)
(Vdd=3.3V, Idq=10.5mA at Room Temperature)
GRAPHS
Copyright © 2006
Rev. 1.0, 2006-12-20
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 5
LX5561
TM
®
InGaAs – E-Mode pHEMT Low Noise Amplifier
P RODUCTION D ATA S HEET
WWW . Microsemi .C OM
APPLICATION SCHEMATIC
BOM LIST
Reference Designator
Part Description
Case
C1
Capacitor, 1 nF
0402
C2
Capacitor,1 µF
0603
C3
Capacitor,10 µF
0805
NOTES
ƒ
ƒ
It is recommended to place C1 at 20-50mil from MLP package outline.
C2 and C3 are used for standalone evaluation board test only. They are not needed in final applications.
APPLICATIONS
Copyright © 2006
Rev. 1.0, 2006-12-20
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 6
LX5561
InGaAs – E-Mode pHEMT Low Noise Amplifier
®
TM
P RODUCTION D ATA S HEET
PACKAGE DIMENSIONS
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LL
12-Pin MLPQ Plastic (2x2mm)
D
D2
E
E2
L
e
b
A
A1
Dim
A
A1
A3
b
D
D2
E
E2
e
L
MILLIMETERS
MIN
MAX
0.40
0.50
0.00
0.05
0.15 REF
0.15
0.25
2.00 BSC
0.77
1.02
2.00 BSC
0.77
1.02
0.40 BSC
0.19
0.39
INCHES
MIN
MAX
0.016
0.020
0.000
0.002
0.006 REF
0.006
0.010
0.079 BSC
0.030
0.040
0.079 BSC
0.030
0.040
0.016 BSC
0.007
0.015
Note:
A3
1. Dimensions do not include mold flash or protrusions;
these shall not exceed 0.155mm(.006”) on any side.
Lead dimension shall not include solder coverage.
MECHANICALS
Recommended Land Pattern
Copyright © 2006
Rev. 1.0, 2006-12-20
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 7
LX5561
TM
®
InGaAs – E-Mode pHEMT Low Noise Amplifier
P RODUCTION D ATA S HEET
NOTES
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NOTES
PRODUCTION DATA – Information contained in this document is proprietary to
Microsemi and is current as of publication date. This document may not be modified in
any way without the express written consent of Microsemi. Product processing does not
necessarily include testing of all parameters. Microsemi reverses the right to change the
configuration and performance of the product and to discontinue product at any time.
Copyright © 2006
Rev. 1.0, 2006-12-20
Microsemi
Integrated Products Division
11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570
Page 8
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