HLDF35P06 P-Channel Enhancement Mode Power MOSFET Description Features The HLDD35P06 uses advanced trench technology □ VDS =-60V,ID =-35A and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. Application □ □ □ Power switchingapplication Hard switched and high frequencycircuits □ RDS(ON)<25mΩ@VGS=10V □ Low gatecharge. □ Green deviceavailable. □ AdvancedhighcelldenitytrenchtechnologyforultraRDS(ON). □ Excellentpackageforgoodheatdissipation. Uninterruptible powersupply Marking and pin assignment P-Channel MOSFET Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -60 V Gate-Source Voltage VGS ±20 V ID -35 A ID (100℃) -27 A Pulsed Drain Current IDM -70 A Maximum Power Dissipation PD 52 .1 W 0.87 W/℃ EAS 162 TJ,TSTG -55 To 150 mJ ℃ Drain Current-Continuous Drain Current-Continuous(TC=100℃) Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range Thermal Characteristic (Note 2) Thermal Resistance,Junction-to-Case www.hldic.com RθJC Page 1 2.4 ℃/W 2017 . 202 . V1.0 HLDF35P06 Package Marking and Ordering Information Part NO. Marking Package HLDF35P06 F35P06 TO-220F Electrical Characteristics (TC=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=250μA -60 - - V Zero Gate Voltage Drain Current IDSS VDS=48V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=250μA -1.0 -1.6 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=18A - 20 25 Off Characteristics On Characteristics (Note 3) Forward Transconductance VGS=4.5V, ID=12A VDS=10V,ID=20A - 33 mΩ 23 - S - 3635 - PF - 224 - PF Crss - 141 - PF Turn-on Delay Time td(on) - 38 - nS Turn-on Rise Time tr VDD=15V,ID=1A, - 23.6 - nS td(off) RG=3.3Ω - 100 - nS - 6.8 - nS - 25 nC - 6.7 nC - 5.5 nC Dynamic Characteristics gFS 26 (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Switching Characteristics VDS=15V,VGS=0V, F=1.0MHz (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=20V,ID=12A , VGS=4.5V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS Reverse Recovery Time VGS=0V,IS=1A trr Reverse Recovery Charge Qrr Forward Turn-On Time ton - -1 V - - -35 A TJ = 25°C, IF = 40A - - - nS di/dt = 100A/μs - - - nC (Note3) Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Notes: 1. Repetitive Rating: Pulse widthlimited bymaximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 se c. 3. Pulse Test: PulseW idth ≤ 300μs, Duty Cycle ≤2% . 4. Guaranteed by design, not subject toproduction 5. EAS condition : VDD=-25V,VGS=-10V,L=0.1mH,IAS=-47.6A www.hldic.com Page 2 2017 . 202 . V1.0 HLDF35P06 P-Ch 60V Fast Switching MOSFETs Typical Characteristics 30 12 ID=-12A 28 VGS=-10V 8 RDSON(mΩ) -ID Drain Current (A) 10 VGS=-7V 26 VGS=-5V 6 VGS=-4.5V 24 4 2 22 VGS=-3V 0 20 0 0.25 0.5 0.75 1 4 2 6 -VDS Drain-to-Source Voltage (V) 8 10 -VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance v.s Gate-Source 12 10 VDS=-20V ID=-12A -VGS Gate to Source Voltage (V) -IS Source Current(A) 10 8 6 TJ=150℃ TJ=25℃ 4 2 0 0.2 0.4 0.6 0.8 8 6 4 2 0 0 1 Fig.3 Forward Characteristics Of Reverse 40 60 Fig.4 Gate-Charge Characteristics 2.0 Normalized On Resistance 1.5 Normalized -VGS(th) 20 QG , Total Gate Charge (nC) -VSD , Source-to-Drain Voltage (V) 1.5 1 1.0 0.5 0.5 0 -50 0 50 100 -50 150 TJ ,Junction Temperature ( ℃) Fig.5 Normalized VGS(th) v.s TJ www.hldic.com 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON v.s TJ Page 3 2017 . 202 . V1.0 HLDF35P06 P-Ch 60V Fast Switching MOSFETs 10000 100.00 F=1.0MHz 100us Capacitance (pF) Ciss 10.00 1000 -ID (A) 1ms Coss 100 10ms 1.00 100ms DC Crss 0.10 Tc=25oC Single Pulse 10 1 5 -V D 9 n to S 13rce V 17 (V) 21 ou oltage DS rai 0.01 25 0.1 1 -V 10(V) 100 1000 DS Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.3 0.1 0.1 0.05 PDM 0.02 TON T 0.01 D = TON/T SINGLE PULSE 0.01 0.00001 0.0001 TJpeak = TC + PDM x θJC 0.001 0.01 0.1 1 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance Fig.10 Switching Time Waveform www.hldic.com Fig.11 Unclamped Inductive Waveform Page 4 2017 . 202 . V1.0 HLDF35P06 TO-220F Package Information www.hldic.com Page 5 2017 . 202 . V1.0