Infineon BSZ0994NS Optimostm power-mosfet, 30 v Datasheet

BSZ0994NS
MOSFET
OptiMOSTMPower-MOSFET,30V
TSDSON-8FL
(enlarged source interconnection)
Features
•OptimizedforhighperformanceWirelesscharger
•VerylowFOMQOSSforHighFrequencySMPS
•LowFOMSWforHighFrequencySMPS
•ExcellentgatechargexRDS(on)product(FOM)
•Verylowon-resistanceRDS(on)@VGS=4.5V
•100%avalanchetested
•Superiorthermalresistance
•N-channel
•QualifiedaccordingtoJEDEC1)fortargetapplications
•Pb-freeleadplating;RoHScompliant
•Halogen-freeaccordingtoIEC61249-2-21
Table1KeyPerformanceParameters
Parameter
Value
Unit
VDS
30
V
RDS(on),max
7
mΩ
ID
13
A
QOSS
6.9
nC
QG(0V..4.5V)
5.2
nC
S1
8D
S2
7D
S3
6D
G4
5D
Type/OrderingCode
Package
Marking
RelatedLinks
BSZ0994NS
PG-TSDSON-8 FL
0994NS
-
1)
J-STD20 and JESD22
Final Data Sheet
1
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSZ0994NS
TableofContents
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Maximum ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Electrical characteristics diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Trademarks . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Final Data Sheet
2
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSZ0994NS
1Maximumratings
atTA=25°C,unlessotherwisespecified
Table2Maximumratings
Parameter
Symbol
Continuous drain current
Values
Unit
Note/TestCondition
13
8.5
A
VGS=10V,TA=25°C
VGS=4.5V,TA=25°C
-
52
A
TA=25°C
-
-
20
A
TC=25°C
EAS
-
-
16
mJ
ID=20A,RGS=25Ω
Gate source voltage
VGS
-20
-
20
V
-
Power dissipation
Ptot
-
-
2.1
W
TA=25°C,RthJA=60K/W
Operating and storage temperature
Tj,Tstg
-55
-
150
°C
IEC climatic category;
DIN IEC 68-1: 55/150/56
Unit
Note/TestCondition
Min.
Typ.
Max.
ID
-
-
ID,pulse
-
Avalanche current, single pulse
IAS
Avalanche energy, single pulse
Pulsed drain current1)
2)
2Thermalcharacteristics
Table3Thermalcharacteristics
Parameter
Symbol
Thermal resistance, junction - case
Device on PCB,
6 cm2 cooling area3)
Values
Min.
Typ.
Max.
RthJC
-
-
4.9
K/W
-
RthJA
-
-
60
K/W
-
Unit
Note/TestCondition
3Electricalcharacteristics
Table4Staticcharacteristics
Parameter
Symbol
Drain-source breakdown voltage
Values
Min.
Typ.
Max.
V(BR)DSS
30
-
-
V
VGS=0V,ID=1mA
Gate threshold voltage
VGS(th)
1.2
-
2
V
VDS=VGS,ID=250µA
Zero gate voltage drain current
IDSS
-
0.1
10
1
100
µA
VDS=30V,VGS=0V,Tj=25°C
VDS=30V,VGS=0V,Tj=125°C
Gate-source leakage current
IGSS
-
10
100
nA
VGS=20V,VDS=0V
Drain-source on-state resistance
RDS(on)
-
7
5
9
7
mΩ
VGS=4.5V,ID=5A
VGS=10V,ID=5A
Gate resistance4)
RG
0.5
1.0
2.0
Ω
-
Transconductance
gfs
20
39
-
S
|VDS|>2|ID|RDS(on)max,ID=9A
1)
See Diagram 3 for more detailed information
See Diagram 13 for more detailed information
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection.
PCB is vertical in still air.
4)
Defined by design. Not subject to production test
2)
Final Data Sheet
3
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSZ0994NS
Table5Dynamiccharacteristics
Parameter
Symbol
Values
Unit
Note/TestCondition
890
pF
VGS=0V,VDS=15V,f=1MHz
270
360
pF
VGS=0V,VDS=15V,f=1MHz
-
40
-
pF
VGS=0V,VDS=15V,f=1MHz
td(on)
-
2.4
-
ns
VDD=15V,VGS=10V,ID=5A,
RG,ext=1.6Ω
Rise time
tr
-
3.4
-
ns
VDD=15V,VGS=10V,ID=5A,
RG,ext=1.6Ω
Turn-off delay time
td(off)
-
12
-
ns
VDD=15V,VGS=10V,ID=5A,
RG,ext=1.6Ω
Fall time
tf
-
2.4
-
ns
VDD=15V,VGS=10V,ID=5A,
RG,ext=1.6Ω
Unit
Note/TestCondition
Min.
Typ.
Max.
Ciss
-
670
Output capacitance
Coss
-
Reverse transfer capacitance
Crss
Turn-on delay time
Input capacitance1)
1)
Table6Gatechargecharacteristics2)
Parameter
Symbol
Gate to source charge
Values
Min.
Typ.
Max.
Qgs
-
1.6
-
nC
VDD=15V,ID=5A,VGS=0to4.5V
Gate charge at threshold
Qg(th)
-
1.1
-
nC
VDD=15V,ID=5A,VGS=0to4.5V
Gate to drain charge
Qgd
-
1.6
-
nC
VDD=15V,ID=5A,VGS=0to4.5V
Switching charge
Qsw
-
2.1
-
nC
VDD=15V,ID=5A,VGS=0to4.5V
Gate charge total
Qg
-
5.2
7
nC
VDD=15V,ID=5A,VGS=0to4.5V
Gate plateau voltage
Vplateau
-
2.4
-
V
VDD=15V,ID=5A,VGS=0to4.5V
Gate charge total
Qg
-
10
14
nC
VDD=15V,ID=5A,VGS=0to10V
Gate charge total, sync. FET
Qg(sync)
-
4.2
-
nC
VDS=0.1V,VGS=0to4.5V
Qoss
-
6.9
9.2
nC
VDD=15V,VGS=0V
Unit
Note/TestCondition
1)
1)
1)
Output charge
Table7Reversediode
Parameter
Symbol
Diode continuous forward current
Values
Min.
Typ.
Max.
IS
-
-
2
A
TA=25°C
Diode pulse current
IS,pulse
-
-
56
A
TA=25°C
Diode forward voltage
VSD
-
0.76
1.1
V
VGS=0V,IF=2A,Tj=25°C
Reverse recovery charge
Qrr
-
10
-
nC
VR=15V,IF=IS,diF/dt=400A/µs
1)
2)
Defined by design. Not subject to production test
See ″Gate charge waveforms″ for parameter definition
Final Data Sheet
4
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSZ0994NS
4Electricalcharacteristicsdiagrams
Diagram1:Powerdissipation
Diagram2:Draincurrent
2.5
15
2.0
10
ID[A]
Ptot[W]
1.5
1.0
5
0.5
0.0
0
40
80
120
0
160
0
40
80
TA[°C]
120
160
TA[°C]
Ptot=f(TA)
ID=f(TA);parameter:VGS
Diagram3:Safeoperatingarea
Diagram4:Max.transientthermalimpedance
2
102
10
1 µs
10 µs
0.5
100 µs
1
10
101
1 ms
0.2
10 ms
0.1
ZthJA[K/W]
100
ID[A]
DC
10-1
100
0.05
0.02
0.01
single pulse
10-1
-2
10
10-3
10-1
100
101
102
10-2
10-6
10-5
10-4
10-3
VDS[V]
10-1
100
101
102
103
tp[s]
ID=f(VDS);TA=25°C;D=0;parameter:tp
Final Data Sheet
10-2
ZthJA=f(tp);parameter:D=tp/T
5
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSZ0994NS
Diagram5:Typ.outputcharacteristics
Diagram6:Typ.drain-sourceonresistance
160
16
10 V
5 V 4.5 V
4V
120
12
80
RDS(on)[mΩ]
ID[A]
3.2 V
3.5 V
3.5 V
8
4V
4.5 V
5V
7V
8V
10 V
3.2 V
40
4
3V
2.8 V
0
0
1
2
0
3
0
10
20
VDS[V]
30
40
50
ID[A]
ID=f(VDS);Tj=25°C;parameter:VGS
RDS(on)=f(ID);Tj=25°C;parameter:VGS
Diagram7:Typ.transfercharacteristics
Diagram8:Typ.forwardtransconductance
160
120
100
120
gfs[S]
ID[A]
80
80
60
40
40
20
150 °C
0
0
1
2
25 °C
3
4
5
0
0
10
VGS[V]
30
40
50
60
ID[A]
ID=f(VGS);|VDS|>2|ID|RDS(on)max;parameter:Tj
Final Data Sheet
20
gfs=f(ID);Tj=25°C
6
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSZ0994NS
Diagram9:Drain-sourceon-stateresistance
Diagram10:Typ.gatethresholdvoltage
10
2.5
8
2.0
1.5
typ
VGS(th)[V]
RDS(on)[mΩ]
6
4
2
1.0
0.5
0
-60
-20
20
60
100
140
0.0
-60
180
-20
20
Tj[°C]
60
100
140
180
Tj[°C]
RDS(on)=f(Tj);ID=5A;VGS=10V
VGS(th)=f(Tj);VGS=VDS;ID=250µA
Diagram11:Typ.capacitances
Diagram12:Forwardcharacteristicsofreversediode
4
103
10
25 °C
150 °C
103
102
IF[A]
C[pF]
Ciss
Coss
102
101
Crss
101
0
5
10
15
20
25
30
100
0.0
VDS[V]
1.0
1.5
VSD[V]
C=f(VDS);VGS=0V;f=1MHz
Final Data Sheet
0.5
IF=f(VSD);parameter:Tj
7
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSZ0994NS
Diagram13:Avalanchecharacteristics
Diagram14:Typ.gatecharge
2
10
12
15 V
10
6V
24 V
VGS[V]
IAV[A]
8
25 °C
101
100 °C
6
125 °C
4
2
100
100
101
102
103
0
0
2
tAV[µs]
4
6
8
10
12
Qgate[nC]
IAS=f(tAV);RGS=25Ω;parameter:Tj(start)
VGS=f(Qgate);ID=5Apulsed;parameter:VDD
Diagram15:Drain-sourcebreakdownvoltage
Gate charge waveforms
34
32
VBR(DSS)[V]
30
28
26
24
22
20
-60
-20
20
60
100
140
180
Tj[°C]
VBR(DSS)=f(Tj);ID=1mA
Final Data Sheet
8
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSZ0994NS
5PackageOutlines
Figure1OutlinePG-TSDSON-8FL,dimensionsinmm/inches
Final Data Sheet
9
Rev.2.0,2016-07-11
OptiMOSTMPower-MOSFET,30V
BSZ0994NS
RevisionHistory
BSZ0994NS
Revision:2016-07-11,Rev.2.0
Previous Revision
Revision
Date
Subjects (major changes since last revision)
2.0
2016-07-11
Release of final version
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Final Data Sheet
10
Rev.2.0,2016-07-11
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