ELM ELM5K8471A-S Single n-channel mosfet Datasheet

Single N-channel MOSFET
ELM5K8471A-S
■General description
■Features
ELM5K8471A-S uses advanced trench technology to
provide excellent Rds(on), low gate charge and low gate
resistance.
•
•
•
•
Vds=60V
Id=5.8A
Rds(on) < 54mΩ (Vgs=10V)
Rds(on) < 60mΩ (Vgs=4.5V)
■Maximum absolute ratings
Parameter
Ta=25°C. Unless otherwise noted.
Limit
Unit
Symbol
Drain-source voltage
Gate-source voltage
Vds
Vgs
60
±20
V
V
Id
5.8
4.2
A
Idm
10
A
Pd
2.8
1.2
W
Tj, Tstg
-55 to 150
°C
Ta=25°C
Ta=70°C
Continuous drain current Tj=150°C
Pulsed drain current
Tc=25°C
Tc=70°C
Power dissipation
Junction and storage temperature range
■Thermal characteristics
Parameter
Maximum junction-to-ambient
Symbol
Rθja
■Pin configuration
Typ.
Max.
120
■Circuit
D
SOT-223(TOP VIEW)
1
2
Unit
°C/W
Pin No.
Pin name
1
2
GATE
DRAIN
3
SOURCE
G
S
3
5- 1
Single N-channel MOSFET
ELM5K8471A-S
■Electrical characteristics
Parameter
STATIC PARAMETERS
Drain-source breakdown voltage
Symbol
Condition
BVdss Id=250μA, Vgs=0V
Zero gate voltage drain current
Idss
Vds=60V, Vgs=0V
Gate-body leakage current
Igss
Vds=0V, Vgs=±20V
Gate threshold voltage
On state drain current
Vgs(th) Vds=Vgs, Id=250μA
Id(on) Vgs=4.5V, Vds=5V
Static drain-source on-resistance
Rds(on)
Forward transconductance
Diode forward voltage
Max. body-diode continuous current
DYNAMIC PARAMETERS
Gfs
Vsd
Ciss
Coss
Reverse transfer capacitance
SWITCHING PARAMETERS
Total gate charge
Turn-on rise time
Turn-off delay time
Turn-off fall time
60
V
1
Ta=85°C
5
1.0
10
μA
±100
nA
2.5
V
A
Vgs=10V, Id=5.8A
48
54
Vgs=4.5V, Id=4.2A
54
60
Vds=15V, Id=2.4A
Is=1.6A, Vgs=0V
24
0.8
Is
Input capacitance
Output capacitance
Gate-source charge
Gate-drain charge
Turn-on delay time
Ta=25°C. Unless otherwise noted.
Min.
Typ.
Max. Unit
mΩ
1.2
S
V
1.6
A
890
85
pF
pF
Crss
48
pF
Qg
Qgs
Qgd
10.0
3.5
3.6
15.0
nC
nC
nC
td(on)
tr
Vgs=4.5V, Vds=30V
10
12
15
20
ns
ns
td(off) RL=6.8Ω, Id=3.0A, Rgen=6Ω
25
35
ns
10
15
ns
Vgs=0V, Vds=30V, f=1MHz
Vgs=5V, Vds=30V, Id=3.0A
tf
5- 2
AFN8471
Alfa-MOS
60V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM5K8471A-S
■Typical
electrical and thermal characteristics
Typical
Characteristics
©Alfa-MOS Technology Corp.
Rev. A May 2011
www.alfa-mos.com
Page 3
5- 3
AFN8471
Alfa-MOS
60V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM5K8471A-S
Typical Characteristics
©Alfa-MOS Technology Corp.
Rev. A May 2011
www.alfa-mos.com
Page 4
5- 4
AFN8471
Alfa-MOS
60V N-Channel
Technology
Enhancement Mode MOSFET
Single N-channel MOSFET
ELM5K8471A-S
Typical■Test
Characteristics
circuit and waveform
©Alfa-MOS Technology Corp.
Rev. A May 2011
www.alfa-mos.com
5- 5
Page 5
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