CYStech Electronics Corp. Spec. No. : C441I3 Issued Date : 2012.02.13 Revised Date : Page No. : 1/9 N-Channel Enhancement Mode Power MOSFET MTB06N03I3 BVDSS ID RDS(ON)@VGS=10V, ID=30A RDS(ON)@VGS=5V, ID=24A 30V 75A 4.5mΩ(typ) 7.3mΩ(typ) Features • Simple Drive Requirement • Repetitive Avalanche Rated • Fast Switching Characteristic • RoHS compliant package & Halogen-free package Symbol Outline MTB06N03I3 TO-251 G：Gate D：Drain S：Source G D S Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Symbol Limits Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C Continuous Drain Current @ TC=100°C Pulsed Drain Current (Note 1) Avalanche Current Avalanche Energy @ L=0.1mH, ID=53A, RG=25Ω Repetitive Avalanche Energy@ L=0.05mH (Note 2) Total Power Dissipation @ TC=25℃ Total Power Dissipation @ TC=100℃ Operating Junction and Storage Temperature Range VDS VGS ID ID IDM IAS EAS EAR 30 ±20 75 47 200 53 140 40 50 20 -55~+150 Pd Tj, Tstg Unit V A mJ W °C Note : 1. Pulse width limited by maximum junction temperature 2. Duty cycle ≤ 1% MTB06N03I3 CYStek Product Specification Spec. No. : C441I3 Issued Date : 2012.02.13 Revised Date : Page No. : 2/9 CYStech Electronics Corp. Thermal Data Parameter Thermal Resistance, Junction-to-case, max Thermal Resistance, Junction-to-ambient, max Symbol Rth,j-c Rth,j-a Value 2.5 110 Unit °C/W °C/W Characteristics (TC=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions 30 1 - 1.5 4.5 7.3 28 3 ±100 1 25 6 9.5 - V V nA VGS=0V, ID=250μA VDS = VGS, ID=250μA VGS=±20, VDS=0V VDS =24V, VGS =0V VDS =20V, VGS =0V, Tj=125°C VGS =10V, ID=30A VGS =5V, ID=24A VDS =5V, ID=24A - 53 26 7 12 26 12 54 18 2811 316 276 1.2 - - 30 10 40 160 1.3 - Static BVDSS VGS(th) IGSS IDSS *RDS(ON) *GFS Dynamic *Qg(VGS=10V) *Qg(VGS=5V) *Qgs *Qgd *td(ON) *tr *td(OFF) *tf Ciss Coss Crss Rg Source-Drain Diode *IS *ISM *VSD *trr *Qrr μA mΩ S nC ID=30A, VDS=15V, VGS=10V ns VDS=15V, ID=25A, VGS=10V, RGS=2.7Ω pF VGS=0V, VDS=15V, f=1MHz Ω VGS=15mV, VDS=0V, f=1MHz A V ns nC IF=IS, VGS=0V IF=IS, VGS=0, dIF/dt=100A/μs *Pulse Test : Pulse Width ≤300μs, Duty Cycle≤2% Ordering Information Device MTB06N03I3 MTB06N03I3 Package TO-251 (RoHS compliant & Halogen-free) Shipping Marking 80 pcs / tube, 50 tubes / box B06N03 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C441I3 Issued Date : 2012.02.13 Revised Date : Page No. : 3/9 Typical Characteristics Brekdown Voltage vs Ambient Temperature Typical Output Characteristics 50 BVDSS, Drain-Source Breakdown Voltage(V) 240 5V, 6V,7V,8V,9V,10V ID, Drain Current(A) 200 160 120 VGS=4V 80 VGS=2V 40 45 40 35 30 ID=250μA, VGS=0V 25 VGS=3V 20 0 0 2 4 6 8 VDS , Drain-Source Voltage(V) -60 10 Static Drain-Source On-State resistance vs Drain Current 180 1.2 100 VSD, Source-Drain Voltage(V) R DS(ON), Static Drain-Source On-State Resistance(mΩ) 20 60 100 140 Tj, Junction Temperature(°C) Reverse Drain Current vs Source-Drain Voltage 1000 VGS=2.5V VGS=3V 10 VGS=4.5V 1 0.001 1 Tj=25°C 0.8 0.6 Tj=150°C 0.4 VGS=10V 0.2 0.01 0.1 1 ID, Drain Current(A) 10 100 0 R DS(ON), Static Drain-Source On-State Resistance(mΩ) 100 90 ID=30A 80 4 8 12 16 IDR , Reverse Drain Current(A) 20 Drain-Source On-State Resistance vs Junction Tempearture Static Drain-Source On-State Resistance vs Gate-Source Voltage R DS(ON), Static Drain-Source OnState Resistance(mΩ) -20 70 60 50 40 30 20 10 8 7 VGS=10V, ID=30A 6 5 4 3 2 1 0 0 0 MTB06N03I3 2 4 6 8 VGS, Gate-Source Voltage(V) 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 Tj, Junction Temperature(°C) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C441I3 Issued Date : 2012.02.13 Revised Date : Page No. : 4/9 Typical Characteristics(Cont.) Threshold Voltage vs Junction Tempearture Capacitance vs Drain-to-Source Voltage 2 VGS(th), Threshold Voltage(V) 10000 Capacitance---(pF) Ciss 1000 C oss ID=250μA 1.8 1.6 1.4 1.2 1 Crss 0.8 100 0.1 1 10 VDS, Drain-Source Voltage(V) -60 100 -20 Forward Transfer Admittance vs Drain Current VGS, Gate-Source Voltage(V) GFS , Forward Transfer Admittance(S) 100 140 10 10 1 VDS=10V Pulsed Ta=25°C 0.1 0.01 0.001 VDS=15V ID=30A 8 6 4 2 0 0.01 0.1 1 ID, Drain Current(A) 10 0 100 10 20 30 40 Total Gate Charge---Qg(nC) 50 60 Maximum Drain Current vs Case Temperature Maximum Safe Operating Area 90 ID, Maximum Drain Current(A) 1000 10μs ID, Drain Current(A) 60 Gate Charge Characteristics 100 100 20 Tj, Junction Temperature(°C) 100μs 1ms 10ms RDS(ON) Limit 10 100ms DC 1 80 70 60 50 40 30 20 10 0 0.1 0.01 MTB06N03I3 0.1 1 10 VDS, Drain-Source Voltage(V) 100 25 50 75 100 125 TC, Case Temperature(°C) 150 175 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C441I3 Issued Date : 2012.02.13 Revised Date : Page No. : 5/9 Typical Characteristics(Cont.) Transient Thermal Response Curves ZθJC(t), Thermal Response 10 D=0.5 1 1.ZθJC(t)=2.5 °C/W max. 2.Duty Factor, D=t1/t2 3.TJM-TC=PDM*ZθJC(t) 0.2 0.1 0.05 0.1 0.02 0.01 Single Pulse 0.01 1.E-05 1.E-04 1.E-03 1.E-02 1.E-01 1.E+00 1.E+01 t1, Square Wave Pulse Duration(s) MTB06N03I3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C441I3 Issued Date : 2012.02.13 Revised Date : Page No. : 6/9 Recommended wave soldering condition Product Peak Temperature Soldering Time Pb-free devices 260 +0/-5 °C 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Sn-Pb eutectic Assembly Average ramp-up rate 3°C/second max. (Tsmax to Tp) Preheat 100°C −Temperature Min(TS min) −Temperature Max(TS max) 150°C −Time(ts min to ts max) 60-120 seconds Time maintained above: −Temperature (TL) 183°C − Time (tL) 60-150 seconds Peak Temperature(TP) 240 +0/-5 °C Time within 5°C of actual peak 10-30 seconds temperature(tp) Ramp down rate 6°C/second max. 6 minutes max. Time 25 °C to peak temperature Pb-free Assembly 3°C/second max. 150°C 200°C 60-180 seconds 217°C 60-150 seconds 260 +0/-5 °C 20-40 seconds 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. MTB06N03I3 CYStek Product Specification Spec. No. : C441I3 Issued Date : 2012.02.13 Revised Date : Page No. : 7/9 CYStech Electronics Corp. TO-251 Dimension Marking: B06 N03 Product Name Date Code □□□□ Style: Pin 1.Gate 2.Drain 3.Source 3-Lead TO-251 Plastic Package CYStek Package Code: I3 Inches Min. Max. 0.250 0.262 0.205 0.213 0.571 0.587 0.028 0.035 0.020 0.028 0.091 TYP 0.091 TYP 0.017 0.023 DIM A B C D E F G H Millimeters Min. Max. 6.350 6.650 5.200 5.400 14.500 14.900 0.700 0.900 0.500 0.700 2.300 TYP 2.300 TYP 0.430 0.580 DIM I J K L M N S T Inches Min. Max. 0.087 0.094 0.213 0.224 0.295 0.311 0.042 0.054 0.017 0.023 0.118 REF 0.197 REF 0.150 REF Millimeters Min. Max. 2.200 2.400 5.400 5.700 7.500 7.900 1.050 1.350 0.430 0.580 3.000 REF 5.000 REF 3.800 REF Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0. Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. MTB06N03I3 CYStek Product Specification