IGBT Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-ratedRAPID1 fastandsoftantiparalleldiode IKW50N65EH5 650VDuoPackIGBTandfull-rateddiode Highspeedseriesfifthgeneration Datasheet IndustrialPowerControl IKW50N65EH5 Highspeedseriesfifthgeneration Highspeed5IGBTinTRENCHSTOPTM5technologycopackedwithfull-rated RAPID1fastandsoftantiparalleldiode FeaturesandBenefits: C HighspeedH5technologyoffering •Best-in-Classefficiencyinhardswitchingandresonant topologies •PlugandplayreplacementofpreviousgenerationIGBTs •650Vbreakdownvoltage •LowgatechargeQG •IGBTcopackedwithfull-ratedRAPID1fastandsoftantiparallel diode •Maximumjunctiontemperature175°C •QualifiedaccordingtoJEDECfortargetapplications •Pb-freeleadplating;RoHScompliant •CompleteproductspectrumandPSpiceModels: http://www.infineon.com/igbt/ G E Applications: •Uninterruptiblepowersupplies •Solarconverters •Weldingconverters •Midtohighrangeswitchingfrequencyconverters 1 Packagepindefinition: 2 3 •Pin1-gate •Pin2&backside-collector •Pin3-emitter KeyPerformanceandPackageParameters Type IKW50N65EH5 VCE IC VCEsat,Tvj=25°C Tvjmax Marking Package 650V 50A 1.65V 175°C K50EEH5 PG-TO247-3 2 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration TableofContents Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Electrical Characteristics Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 Package Drawing . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .15 Testing Conditions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .16 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 Disclaimer . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .17 3 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration MaximumRatings Foroptimumlifetimeandreliability,Infineonrecommendsoperatingconditionsthatdonotexceed80%ofthemaximumratingsstatedinthisdatasheet. Parameter Symbol Value Unit Collector-emittervoltage,Tvj≥25°C VCE 650 V DCcollectorcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IC 80.0 50.0 A Pulsedcollectorcurrent,tplimitedbyTvjmax1) ICpuls 200.0 A Turn off safe operating area VCE≤650V,Tvj≤175°C,tp=1µs1) - 200.0 A Diodeforwardcurrent,limitedbyTvjmax TC=25°Cvaluelimitedbybondwire TC=100°C IF 80.0 50.0 A Diodepulsedcurrent,tplimitedbyTvjmax1) IFpuls 200.0 A Gate-emitter voltage TransientGate-emittervoltage(tp≤10µs,D<0.010) VGE ±20 ±30 V PowerdissipationTC=25°C PowerdissipationTC=100°C Ptot 275.0 138.0 W Operating junction temperature Tvj -40...+175 °C Storage temperature Tstg -55...+150 °C Soldering temperature, wave soldering 1.6mm (0.063in.) from case for 10s °C 260 Mounting torque, M3 screw Maximum of mounting processes: 3 M 0.6 Nm ThermalResistance Parameter Characteristic Symbol Conditions Max.Value Unit IGBT thermal resistance, junction - case Rth(j-c) 0.55 K/W Diode thermal resistance, junction - case Rth(j-c) 0.63 K/W Thermal resistance junction - ambient Rth(j-a) 40 K/W 1) Defined by design. Not subject to production test. 4 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. 650 - - VGE=15.0V,IC=50.0A Tvj=25°C Tvj=125°C Tvj=175°C - 1.65 1.85 1.95 2.10 - - 1.35 1.33 1.30 1.70 - 3.2 4.0 4.8 V 1.0 50.0 2000.0 - µA StaticCharacteristic Collector-emitter breakdown voltage V(BR)CES VGE=0V,IC=0.20mA Collector-emitter saturation voltage VCEsat V V Diode forward voltage VF VGE=0V,IF=50.0A Tvj=25°C Tvj=125°C Tvj=175°C Gate-emitter threshold voltage VGE(th) IC=0.50mA,VCE=VGE Zero gate voltage collector current ICES VCE=650V,VGE=0V Tvj=25°C Tvj=175°C - Gate-emitter leakage current IGES VCE=0V,VGE=20V - - 100 nA Transconductance gfs VCE=20V,IC=50.0A - 62.0 - S V ElectricalCharacteristic,atTvj=25°C,unlessotherwisespecified Parameter Symbol Conditions Value Unit min. typ. max. - 3000 - - 90 - - 12 - - 120.0 - nC - 13.0 - nH DynamicCharacteristic Input capacitance Cies Output capacitance Coes Reverse transfer capacitance Cres Gate charge QG Internal emitter inductance measured 5mm (0.197 in.) from case LE VCE=25V,VGE=0V,f=1MHz VCC=520V,IC=50.0A, VGE=15V pF SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 25 - ns - 29 - ns - 172 - ns - 35 - ns - 1.50 - mJ - 0.50 - mJ - 2.00 - mJ IGBTCharacteristic,atTvj=25°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=25°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 5 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets - 24 - ns - 12 - ns - 173 - ns - 15 - ns - 0.57 - mJ - 0.16 - mJ - 0.73 - mJ Tvj=25°C, VR=400V, IF=50.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF - 81 - ns - 1.10 - µC - 17.0 - A - -1000 - A/µs Tvj=25°C, VR=400V, IF=25.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF - 56 - ns - 0.70 - µC - 19.7 - A - -1500 - A/µs Tvj=25°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. DiodeCharacteristic,atTvj=25°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt SwitchingCharacteristic,InductiveLoad Parameter Symbol Conditions Value Unit min. typ. max. - 24 - ns - 30 - ns - 190 - ns - 30 - ns - 2.00 - mJ - 0.60 - mJ - 2.60 - mJ - 23 - ns - 14 - ns - 203 - ns - 20 - ns - 0.95 - mJ - 0.25 - mJ - 1.20 - mJ IGBTCharacteristic,atTvj=150°C Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time tf Turn-on energy Eon Turn-off energy Eoff Total switching energy Ets Tvj=150°C, VCC=400V,IC=50.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. Tvj=150°C, VCC=400V,IC=25.0A, VGE=0.0/15.0V, RG(on)=12.0Ω,RG(off)=12.0Ω, Lσ=30nH,Cσ=25pF Lσ,CσfromFig.E Energy losses include “tail” and diode reverse recovery. 6 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration DiodeCharacteristic,atTvj=150°C Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irrm Diode peak rate of fall of reverse recoverycurrentduringtb dirr/dt Tvj=150°C, VR=400V, IF=50.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF - 108 - ns - 2.60 - µC - 36.0 - A - -2000 - A/µs Tvj=150°C, VR=400V, IF=25.0A, diF/dt=1000A/µs, Lσ=30nH, Cσ=25pF - 98 - ns - 1.80 - µC - 28.8 - A - -1500 - A/µs 7 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration 100 300 Ptot,POWERDISSIPATION[W] IC,COLLECTORCURRENT[A] 250 10 1 200 150 100 50 not for linear use 0.1 1 10 100 0 1000 25 50 VCE,COLLECTOR-EMITTERVOLTAGE[V] 75 100 125 150 175 TC,CASETEMPERATURE[°C] Figure 1. Forwardbiassafeoperatingarea (D=0,TC=25°C,Tvj≤175°C,VGE=15V,tp=1µs, ICmaxdefinedbydesign-notsubjectto production test) Figure 2. Powerdissipationasafunctionofcase temperature (Tvj≤175°C) 90 150 VGE = 20V 80 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] 70 60 50 40 30 20 18V 120 15V 12V 105 10V 90 8V 7V 75 6V 60 5V 45 30 10 0 135 15 25 50 75 100 125 150 0 175 TC,CASETEMPERATURE[°C] 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 3. Collectorcurrentasafunctionofcase temperature (VGE≥15V,Tvj≤175°C) Figure 4. Typicaloutputcharacteristic (Tvj=25°C) 8 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration 150 150 135 18V 135 120 15V 120 12V 105 IC,COLLECTORCURRENT[A] IC,COLLECTORCURRENT[A] VGE = 20V 10V 90 8V 7V 75 6V 60 5V 45 105 90 75 60 45 30 30 15 15 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 Tvj = 25°C Tvj = 150°C 2 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 5. Typicaloutputcharacteristic (Tvj=150°C) 4 5 6 7 8 9 Figure 6. Typicaltransfercharacteristic (VCE=20V) 4.0 1000 IC = 25A IC = 50A IC = 100A 3.5 td(off) tf td(on) tr 3.0 t,SWITCHINGTIMES[ns] VCEsat,COLLECTOR-EMITTERSATURATION[V] 3 VGE,GATE-EMITTERVOLTAGE[V] 2.5 2.0 1.5 100 10 1.0 0.5 0.0 25 50 75 100 125 150 1 175 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 IC,COLLECTORCURRENT[A] Figure 7. Typicalcollector-emittersaturationvoltageas Figure 8. Typicalswitchingtimesasafunctionof afunctionofjunctiontemperature collectorcurrent (VGE=15V) (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) 9 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration 1000 1000 td(off) tf td(on) tr t,SWITCHINGTIMES[ns] t,SWITCHINGTIMES[ns] td(off) tf td(on) tr 100 10 5 15 25 35 45 55 65 75 100 10 1 85 25 RG,GATERESISTANCE[Ω] Figure 9. Typicalswitchingtimesasafunctionofgate resistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=50A,dynamictestcircuitin Figure E) 100 125 150 175 12 typ. min. max. 5.5 Eoff Eon Ets 11 E,SWITCHINGENERGYLOSSES[mJ] VGE(th),GATE-EMITTERTHRESHOLDVOLTAGE[V] 75 Figure 10. Typicalswitchingtimesasafunctionof junctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) 6.0 5.0 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 10 9 8 7 6 5 4 3 2 1 25 50 75 100 125 0 150 Tvj,JUNCTIONTEMPERATURE[°C] 0 25 50 75 100 125 150 IC,COLLECTORCURRENT[A] Figure 11. Gate-emitterthresholdvoltageasafunction ofjunctiontemperature (IC=0.5mA) 10 Figure 12. Typicalswitchingenergylossesasa functionofcollectorcurrent (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,RG(on)=12Ω,RG(off)=12Ω, dynamic test circuit in Figure E) Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration 7 3.0 Eoff Eon Ets E,SWITCHINGENERGYLOSSES[mJ] E,SWITCHINGENERGYLOSSES[mJ] 6 Eoff Eon Ets 5 4 3 2 1 0 5 15 25 35 45 55 65 75 2.5 2.0 1.5 1.0 0.5 0.0 85 25 RG,GATERESISTANCE[Ω] Figure 13. Typicalswitchingenergylossesasa functionofgateresistance (inductiveload,Tvj=150°C,VCE=400V, VGE=0/15V,IC=50A,dynamictestcircuitin Figure E) 125 150 175 VCE = 130V VCE = 520V 14 VGE,GATE-EMITTERVOLTAGE[V] E,SWITCHINGENERGYLOSSES[mJ] 100 16 Eoff Eon Ets 2.5 2.0 1.5 1.0 0.5 0.0 200 75 Figure 14. Typicalswitchingenergylossesasa functionofjunctiontemperature (inductiveload,VCE=400V,VGE=0/15V, IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) 3.5 3.0 50 Tvj,JUNCTIONTEMPERATURE[°C] 12 10 8 6 4 2 250 300 350 400 450 0 500 VCE,COLLECTOR-EMITTERVOLTAGE[V] Figure 15. Typicalswitchingenergylossesasa functionofcollectoremittervoltage (inductiveload,Tvj=150°C,VGE=0/15V, IC=50A,RG(on)=12Ω,RG(off)=12Ω,dynamic test circuit in Figure E) 0 20 40 60 80 100 120 QG,GATECHARGE[nC] Figure 16. Typicalgatecharge (IC=50A) 11 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 1E+4 C,CAPACITANCE[pF] 1000 100 10 Cies Coes Cres 1 0 5 10 15 20 25 D = 0.5 0.1 0.05 0.02 0.01 single pulse 0.01 i: 1 2 3 4 5 6 ri[K/W]: 9.5E-3 0.125039 0.132857 0.256654 0.021551 2.1E-3 τi[s]: 2.5E-5 2.3E-4 2.1E-3 0.012197 0.104256 1.840158 0.001 1E-7 30 0.2 0.1 1E-6 VCE,COLLECTOR-EMITTERVOLTAGE[V] 1E-5 1E-4 0.001 0.01 0.1 tp,PULSEWIDTH[s] Figure 17. Typicalcapacitanceasafunctionof collector-emittervoltage (VGE=0V,f=1MHz) Figure 18. IGBTtransientthermalimpedance (D=tp/T) Tvj = 25°C, IF = 50A Tvj = 150°C, IF = 50A 160 trr,REVERSERECOVERYTIME[ns] Zth(j-c),TRANSIENTTHERMALIMPEDANCE[K/W] 180 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 single pulse 0.01 0.001 1E-7 1E-5 1E-4 0.001 0.01 120 100 80 60 40 20 i: 1 2 3 4 5 6 ri[K/W]: 0.013431 0.146325 0.159015 0.278506 0.025538 2.1E-3 τi[s]: 2.6E-5 2.1E-4 2.0E-3 0.01147 0.091987 1.834403 1E-6 140 0 500 0.1 tp,PULSEWIDTH[s] 700 900 1100 1300 1500 diF/dt,DIODECURRENTSLOPE[A/µs] Figure 19. Diodetransientthermalimpedanceasa functionofpulsewidth (D=tp/T) Figure 20. Typicalreverserecoverytimeasafunction ofdiodecurrentslope (VR=400V) 12 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration 3.5 70 Tvj = 25°C, IF = 50A Tvj = 150°C, IF = 50A 3.0 60 Irr,REVERSERECOVERYCURRENT[A] Qrr,REVERSERECOVERYCHARGE[µC] Tvj = 25°C, IF = 50A Tvj = 150°C, IF = 50A 2.5 2.0 1.5 1.0 0.5 0.0 500 50 40 30 20 10 700 900 1100 1300 0 500 1500 700 900 1100 1300 diF/dt,DIODECURRENTSLOPE[A/µs] diF/dt,DIODECURRENTSLOPE[A/µs] Figure 21. Typicalreverserecoverychargeasa functionofdiodecurrentslope (VR=400V) Figure 22. Typicalreverserecoverycurrentasa functionofdiodecurrentslope (VR=400V) 0 150 -1000 dIrr/dt,DIODEPEAKRATEOFFALLOFIrr[A/µs] 1500 Tvj = 25°C Tvj = 150°C 135 -2000 120 IF,FORWARDCURRENT[A] -3000 -4000 -5000 -6000 -7000 -8000 -9000 -10000 -11000 90 75 60 45 30 Tvj = 25°C, IF = 50A Tvj = 150°C, IF = 50A 15 -12000 -13000 500 105 700 900 1100 1300 1500 diF/dt,DIODECURRENTSLOPE[A/µs] 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 VF,FORWARDVOLTAGE[V] Figure 23. Typicaldiodepeakrateoffallofreverse recoverycurrentasafunctionofdiode currentslope (VR=400V) Figure 24. Typicaldiodeforwardcurrentasafunction offorwardvoltage 13 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration 2.00 VF,FORWARDVOLTAGE[V] 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 IF = 25A IF = 50A IF = 100A 25 50 75 100 125 150 175 Tvj,JUNCTIONTEMPERATURE[°C] Figure 25. Typicaldiodeforwardvoltageasafunction ofjunctiontemperature 14 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration Package Drawing PG-TO247-3 15 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration Testing Conditions VGE(t) I,V 90% VGE t rr = t a + t b Q rr = Q a + Q b dIF/dt a 10% VGE b t Qa IC(t) Qb dI 90% IC 90% IC 10% IC 10% IC Figure C. Definition of diode switching characteristics t VCE(t) t td(off) tf td(on) t tr Figure A. VGE(t) 90% VGE Figure D. 10% VGE t IC(t) CC 2% IC t Figure E. Dynamic test circuit Parasitic inductance Ls, parasitic capacitor Cs, relief capacitor Cr, (only for ZVT switching) VCE(t) t2 E off = t4 VCE x IC x dt E t1 t1 on = VCE x IC x d t 2% VCE t3 t2 t3 t4 t Figure B. 16 Rev.2.1,2015-05-20 IKW50N65EH5 Highspeedseriesfifthgeneration RevisionHistory IKW50N65EH5 Revision:2015-05-20,Rev.2.1 Previous Revision Revision Date Subjects (major changes since last revision) 2.1 2015-05-20 Final data sheet WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall? Yourfeedbackwillhelpustocontinuouslyimprovethequalityofthisdocument. Pleasesendyourproposal(includingareferencetothisdocument)to:[email protected] Publishedby InfineonTechnologiesAG 81726Munich,Germany 81726München,Germany ©2015InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics. Withrespecttoanyexamplesorhintsgivenherein,anytypicalvaluesstatedhereinand/oranyinformationregardingthe applicationofthedevice,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind, includingwithoutlimitation,warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Information Forfurtherinformationontechnology,deliverytermsandconditionsandprices,pleasecontactthenearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesin question,pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystems and/orautomotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineon Technologies,ifafailureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support, automotive,aviationandaerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Life supportdevicesorsystemsareintendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustain and/orprotecthumanlife.Iftheyfail,itisreasonabletoassumethatthehealthoftheuserorotherpersonsmaybe endangered. 17 Rev.2.1,2015-05-20