TT OP235 High reliability hermetic infrared emitting diode Datasheet

High Reliability Hermetic
Infrared Emitting Diode
OP235, OP236 (TX, TXV)
Features:





TO-46 hermetically sealed package with lens
Twice the power output of GaAs at same drive current
Characterized to define infrared energy along mechanical axis of device
Narrow beam angle
Processed to MIL-PRF-19500
Description:
Each device in this series is a gallium aluminum arsenide (GaAIAs) infrared emitting diode, mounted in a hermetic metal TO46 housing with 0.50” (12.70 mm) leads. The gallium aluminum arsenide feature provides a higher radiated output than
gallium arsenide at the same forward current, while the 890 nm wavelength closely matches the spectral response of silicon
phototransistors. Devices have lens cans that provide an 18° beam angle between half power points, which facilitates the
easy design of beam interrupt applications with the OP804 and OP805 series of high reliability phototransistors.
TX and TXV devices are processed to OPTEK’s military screening program patterned after MIL-PRF-19500. After 100%
screening, Group A and B are performed on every lot and a Group C test is performed every six months.
Please refer to Application Bulletins 208 and 210 for additional design information and reliability (degradation) data.
Applications:







Non-contact reflective object sensor
Assembly line automation
Machine automation
Machine safety
End of travel sensor
Door sensor
Military and harsh environments
Part
Number
OP235TX
OP235TXV
OP236TX
OP236TXV
LED
Peak
Wavelength
Output Power
(mW/cm2)
Min / Max
Total
IF (mA)
Beam
Typ / Max Angle
Lead
Length
1.5 / NA
890 nm
50 / 100
18°
0.50"
3.5 / NA
1
2
[ MILLIMEDIMENSIONS ARE IN:
LED
Sensor
1
Anode
Collector / Cathode
2
Cathode
Emitter / Anode
INCHES
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
Pin #
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200
www.ttelectronics.com | [email protected]
Issue A
11/2016
Page 1
High Reliability Hermetic
Infrared Emitting Diode
Electrical Specifications
Absolute Maximum Ratings (TA = 25° C unless otherwise noted)
Storage Temperature Range
-65o C to +150o C
Operating Temperature Range
-55o C to +125o C
Reverse Voltage
2.0 V
Forward DC Current
100 mA
Lead Soldering Temperature [1/16 inch (1.6 mm) from case for 5 seconds with soldering iron]
260° C(1)
200 mW(2)
Power Dissipation
Electrical Characteristics (TA = 25° C unless otherwise noted)
SYMBOL
EE(APT)
PARAMETER
MIN
TYP
MAX
1.5
3.5
-
-
1.1
1.3
0.9
-
2.0
2.2
1.8
V
IF = 100 mA
IF = 100 mA, TA = -55° C
IF = 100 mA, TA = 100° C
Apertured Radiant Incidence
OP235 (TX, TXV)
OP236 (TX, TXV)
Forward Voltage
VF
UNITS
TEST CONDITIONS
mW/cm2 IF = 100 mA
IR
Reverse Current
-
-
100
µA
VR= 2.0 V
λP
Wavelength at Peak Emission
-
890
-
nm
IF = 100 mA
β
Spectral Bandwidth between
Half Power Points
-
50
-
nm
IF = 100 mA
Emission Angle at Half Power Points
-
18
-
Degree
IF = 100 mA
θHP
Notes:
1. RMA flux is recommended. Duration can be extended to 10 seconds maximum when flow soldering.
2. Derate linearly 2.00 mW/° C above 25° C.
3. EE(APT) is a measurement of the average radiant intensity within the cone formed by the measurement surface, a radius of 1.429” (36.30 mm)
measured from the lens side of the tab to the sensing surface and a sensing surface of 0.250” (6.35 mm) in diameter forming a 10° cone. EE(APT) is
not necessarily uniform within the measured area.
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200
www.ttelectronics.com | [email protected]
Issue A
11/2016
Page 2
High Reliability Hermetic
Infrared Emitting Diode
Forward Voltage vs Forward Current vs
Forward VoltageTemperature
vs Forward Current
vs Temperature
Optical Power vs Forward Current vs
Optical Power
vs Forward Current
Temperature
vs Temperature
1.8
2.5
Normalized at 50 mA and 20° C
1.4
1.2
-60°C
-40°C
-20°C
0°C
20°C
40°C
60°C
80°C
100°C
120°C
1.0
0.8
0
5
10
15
20
25
30
35
40
45
1.0
0.0
50
0
10
20
30
40
50
60
70
80
90
Forward Current IF (mA)
Forward Current (mA)
Distance vs Output Power vs Forward
Distance vs Output Power vs Forward Current
Current
18
16
Normalized Output Power
1.5
0.5
0.6
20
-60°C
-40°C
-20°C
0°C
20°C
40°C
60°C
80°C
100°C
120°C
2.0
Relative Output Power
Typical Forward Voltage (V)
1.6
Normalized at 1.0" and 50 mA
Forward Current
10 mA
20 mA
30 mA
40 mA
50 mA
60 mA
80 mA
100 mA
120 mA
14
12
10
8
6
4
2
0
0.2 '' 0.4 '' 0.6 '' 0.8 '' 1.0 '' 1.2 '' 1.4 '' 1.6 '' 1.8 '' 2.0 ''
Distance (inches)
General Note
TT Electronics reserves the right to make changes in product specification without
notice or liability. All information is subject to TT Electronics’ own data and is
considered accurate at time of going to print.
© TT electronics plc
TT Electronics | Optek Technology, Inc.
1645 Wallace Drive, Ste. 130, Carrollton, TX USA 75006 |Ph: +1 972 323 2200
www.ttelectronics.com | [email protected]
Issue A
11/2016
Page 3
100
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