Comchip BC857B-HF General purpose transistor Datasheet

General Purpose Transistor
BC856-HF Thru. BC858-HF Series (PNP)
RoHS Device
Halogen Free
Features
- Ideally suited for automatic insertion
SOT-23
- Power dissipation
PCM: 0.25W (@TA=25°C)
0.122(3.10)
0.106(2.70)
- Low current.(max. 100mA)
3
- Collector-base voltage
VCBO: BC856 = -80V
BC857 = -50V
BC858 = -30V
0.059(1.50)
0.043(1.10)
1
2
0.079(2.00)
0.071(1.80)
- Operating and storage junction temperature
range: TJ, TSTG= -65 to +150°C
0.004(0.10)
Typ.
0.039(1.00)
Typ.
Mechanical data
- Case: SOT-23, molded plastic.
- Terminals: Solderable per MIL-STD-750,
method 2026.
0.102(2.60)
0.087(2.20)
0.004(0.10)
0.001(0.02)
Circuit diagram
0.016(0.40)
Typ.
Dimensions in inches and (millimeter)
3
- 1.BASE
- 2.EMITTER
- 3.COLLECTOR
1
2
Maximum Ratings (at Ta=25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Collector-Base voltage
BC856
BC857
BC858
VCBO
-80
-50
-30
V
Collector-Emitter voltage
BC856
BC857
BC858
VCEO
-65
-45
-30
V
VEBO
-5
V
Collector current-continuous
IC
-0.1
A
Collector dissipation
PC
250
mW
Junction temperature range
TJ
-65 to +150
°C
Storage temperature range
TSTG
-65 to +150
°C
Emitter-Base voltage
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General Purpose Transistor
Electrical Characteristics (TA= 25°C unless otherwise specified)
Symbol
Parameter
Test Conditions
MIN
TYP
MAX
Unit
Collector-Base breakdown voltage
BC856
BC857
BC858
V(BR)CBO
IC = -10μA , IE=0
-80
-50
-30
V
Collector-Emitter breakdown voltage
BC856
BC857
BC858
V(BR)CEO
IC = -10mA , IB=0
-65
-45
-30
V
V(BR)EBO
IE = -1μA , IC=0
-5
V
Collector cut-off current
ICBO
VCB= -30V , IE=0
Emitter cut-off current
IEBO
VEB= -5V , IC=0
hFE
VCE = -5V , IC= -2.2mA
Emitter-Base breakdown voltage
DC current gain
BC856A ,857A ,858A
BC856B ,857B ,858B
BC857C ,858C
-1
125
220
420
-15
nA
-0.1
µA
250
475
800
IC =-100mA , IB=-5mA
-0.65
IC =-10mA , IB=-0.5mA
-0.3
Collector-Emitter saturation voltage
VCE(sat)
Base-Emitter saturation voltage
VBE(sat)
Base-Emitter voltage
VBE(on)
Collector capacitance
CC
VCB =-10V , IE=Ie=0
f=1MHZ
4.5
Transition frequency
F
IC=-200uA,VCE=-5V
RS=2kΩ,f=1kHz,
B=200Hz
2
Transition frequency
fT
VCE=-5V, IC=-10mA
f=100MHZ
IC =-10mA , IB=-0.5mA
-0.7
IC =-100mA , IB=-5mA
-0.85
IC =-2mA , VCE=-5V
-0.6
-0.65
IC =-10mA , VCE=-5V
V
-0.75
-0.82
100
V
V
pF
10
dB
MHZ
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General Purpose Transistor
Electrical Characteristic Curves (BC856-HF Thru. BC858-HF Series)
Fig.1 - DC current gain as A function fo
collector current; typical values.
Fig.2 - Base-Emitter voltage as a function
of collector current; typical values
-1200
500
BC857A;VCE= -5V
-1000
400
VBE, (mV)
-800
Tamb=150°C
hFE
300
200
°C
=-55
Tamb
-600
b=2
Tam
5°C
-400
Tamb=25°C
b=1
Tam
100
C
50 °
-200
Tamb=-55°C
0
-2
-10
BC857A;VCE= -5V
0
-1
-10
3
2
-10
-1
-10
-2
-10
-10
-1
-10
-10
-1
2
-10
3
-10
IC, (mA)
IC, (mA)
Fig.3 - Collector-Emitter saturation voltage
as a function of collector current;
typical values.
Fig.4 - Base-Emitter saturation voltage
as a function of collector current;
typical values
4
-10
-1200
BC857A;IC/IB= 20
-1000
3
VBEsat, (mV)
VCEsat, (mV)
-10
Tamb=150°C
2
-10
-800
°C
=-55
Tamb
C
=25°
Tamb
-600
°C
=150
Tamb
-400
-200
Tamb=25°C
BC857A;IC/IB= 20
Tamb=-55°C
-10 -1
-10
3
2
-10
-1
0
-1
-10
-10
-10
3
2
-10
-1
-10
-10
IC, (mA)
IC, (mA)
Fig.5 - DC current gain as a function fo
collector current; typical values.
Fig. 6 - Base-Emitter voltage as a function
of collector current; typical values.
-1200
1000
BC857B;VCE= -5V
-1000
800
VBE, (mV)
-800
600
hFE
Tamb=150°C
400
°C
=-55
Tamb
-600
b
Tam
°C
=2 5
-400
Tamb=25°C
Tam
200
50
b=1
°C
-200
Tamb=-55°C
BC857B;VCE=-5V
0
0
-2
-10
-1
-10
-1
-10
2
-10
3
-10
-2
-10
-1
-10
IC, (mA)
-1
-10
2
-10
3
-10
IC, (mA)
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General Purpose Transistor
Electrical Characteristic Curves (BC856-HF Thru. BC858-HF Series)
Fig.7 - Collector-Emitter saturation voltage
as a function of collector current
typical values.
Fig.8 - Base-Emitter saturation voltage
as a function of collector current;
typical values
4
-10
-1200
BC857B;IC/IB= 20
-1000
VBEsat, (mV)
VCEsat, (mV)
3
-10
Tamb=150°C
2
-10
-800
°C
=-55
Tamb
C
=25°
Tamb
-600
°C
=150
Tamb
-400
-200
Tamb=25°C
Tamb=-55°C
BC857B;IC/IB= 20
0
-10
-1
3
2
-10
-1
-10
-10
-1
-10
-10
3
2
-10
-1
-10
-10
IC, (mA)
IC, (mA)
Fig.9 - DC current gain as a function fo
collector current; typical values.
Fig.10 - Base-Emitter voltage as a function
of collector current; typical values
-1200
1000
BC857C;VCE= -5V
-1000
800
Tam
b
= 15 0
°C
VBE, (mV)
hFE
600
400
b
Tam
Tamb=-55°C
°C
=25
-600
b =1
Tam
-400
Tamb=25°C
200
°C
=-55
Tamb
-800
C
50°
-200
BC857C;VCE= -5V
0
-2
-10
0
-1
-10
-10
-1
2
-10
3
-1
-10
-10
IC, (mA)
-10
3
-10
IC, (mA)
Fig.12 - Base-Emitter saturation voltage
as a function of collector current;
typical values
Fig.11 - Collector-Emitter saturation voltage
as a function of collector current;
typical values.
4
-10
2
-10
-1
-1200
BC857C;IC/IB= 20
-1000
2
VBEsat, (mV)
VCEsat , (mV)
3
-10
Tamb=150°C
-10
-800
°C
=-55
Tamb
C
=25°
Tamb
-600
°C
=150
Tamb
-400
-200
Tamb=-55°C
-10
-1
-10
BC857C;IC/IB= 20
Tamb=25°C
0
-1
-10
2
-10
3
-10
-1
-10
IC, (mA)
-1
-10
2
-10
3
-10
IC, (mA)
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General Purpose Transistor
Reel Taping Specification
P1
F
E
d
P0
B
W
XX
12
o
0
D2
D1 D
W1
SOT-23
SOT-23
SYMBOL
A
B
C
d
D
D1
D2
(mm)
3.15 ± 0.10
2.77 ± 0.10
1.22 ± 0.10
1.50 ± 0.10
178.00 ± 1.00
54.40 ± 0.50
13.00 ± 0.50
(inch)
0.124 ± 0.004
0.109 ± 0.004
0.048 ± 0.004
0.059 ± 0.004
7.008 ± 0.039
2.142 ± 0.020
0.512 ± 0.020
SYMBOL
E
F
P
P0
P1
W
W1
(mm)
1.75 ± 0.10
3.50 ± 0.05
4.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.05
8.00 + 0.30 / - 0.10
12.50 ± 1.00
(inch)
0.069 ± 0.004
0.138 ± 0.002
0.157 ± 0.004
0.157 ± 0.004
0.079 ± 0.002 0.315 + 0.012 / - 0.004
0.492 ± 0.039
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General Purpose Transistor
Marking Code
Part Number
Marking Code
BC856A-HF
3A
3
BC857A-HF
3E
BC858A-HF
3J
XX
BC856B-HF
3B
BC857B-HF
3F
BC858B-HF
3K
BC857C-HF
3G
BC858C-HF
3L
1
2
xx = Product type marking code
Suggested PAD Layout
SOT-23
B
SIZE
(mm)
(inch)
A
0.90
0.035
B
0.80
0.031
C
1.90
0.075
D
2.00
0.079
A
D
C
Standard Packaging
Case Type
SOT-23
Qty Per Reel
Reel Size
(Pcs)
(inch)
3,000
7
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