Infineon BGT60 Infineon rounds off the backhaul family with a packaged rf solution for v-band radio Datasheet

Product Brief
Infineon rounds off the Backhaul Family with
a packaged RF Solution for V-band Radio
Backhaul Transceiver Chip – BGT60
Infineon has a broad portfolio of packaged RF transceivers for basestation backhaul solutions –
beside BGT70 and BGT80 for E-band radio, also BGT60 for V-band radio. The family approach has
a major benefit – one architecture supporting the three backhaul frequency ranges of 60, 70 and
80GHz. Customers can easily design all three radios with the same footprint for all three transceivers.
Mobile communication and especially LTE (4G) is gaining momentum these days due to the fact
that all big carriers and mobile phone manufacturers are investing in the 4th generation ecosystem.
The primary challenge facing this ecosystem is the fact that LTE will further enhance video and
data exchange to a maximum, allowing everybody to send their latest holiday pictures and videos
to friends. The bulk of today’s base station infrastructure is not equipped to support the required
high data throughput. The connection between the base station has up to now been planned for
lower data rates (< 100MBit/s) and now needs increased capacity. This is where wireless backhaul technology comes into play. A solution using wireless backhaul in the V-band (57–64GHz)
will enable the 7GHz frequency to support higher data rates. This enables data rates > 1Gbit/s for
video and data services, sufficient for LTE.
Backhaul Network
Example
LTE
BTS
Picocell
Picocell
Macrocell
Picocell
Microcell
4G/LTE
Characteristics of different Base Station Sizes
Base Station
Picocell
Microcell
Macrocell
Range
10–200m
200m–2km
1–30km
No. of users
8–32
64+
200+
Typical application
SMB, enterprise, public
indoor areas
Metro outdoors, city centers, capacity hotspots
Outdoor coverage
Deployment scenario
Enterprise or operator
deployed
Operator deployed
Operator deployed
www.infineon.com/rf
BGT60 Features
Target Feature Details
„„ Developed for telecommunication only
„„ Support FDD and TDD systems
(in full duplex or half-duplex mode)
„„ Support modulation schemes:
QPSK, QAM
„„ Support small cell backhaul
(up to 1000m)
„„ Direct conversion I/Q transceiver
„„ IF bandwidth 1000MHz
„„ Differential RF/IF interface for lower loss
and better isolation
„„ Integration of VCO (Voltage Controller
Oscillator) signal generation
„„ PNssb (Phase Noise single side band)
< -80dBc/Hz @ 100kHz offset
„„ Typ. 13dBm linear output power
„„ 7dB NF (Noise Figure)
„„ Integrated power detection function
„„ Integrated thermal sensor
„„ eWLB (embedded Wafer Level
Ball Grid Array) packaged device
Product Brief
Infineon rounds off the Backhaul Family with
a packaged RF Solution for V-band Radio
Backhaul Transceiver Chip – BGT60
However, if we compare the 60GHz V-band with the 80GHz E-band, the
former is always seen as a less favorable frequency band, due to the
sharp oxygen absorption. This means that in addition to the Free Space
Loss (FSL), oxygen absorption loss must be taken into account and a
margin allowed for rain fade. As a result, a maximum link distance of up
to 1000 meters is possible.
This could be considered a disadvantage in traditional network design,
where a microwave link would mostly be used for distances beyond
1000 meters. Particularly in the case of Picocell deployment, high
oxygen absorption and the associated reduced range becomes a real
benefit compared to traditional microwave or other wireless backhauling solutions:
Benefits of V-band Radio
„„ Hundreds of links can be installed in a dense area
„„ Very low interference between the PTP links or other 60GHz devices
in the field
„„ High bandwidth for up to 1Gbit/s (full duplex) per link
The Infineon business approach enables such a Gbit service with the
latest technology. Thanks to Infineon’s advanced SiGe (Silicon Germanium) technology with a transit frequency of 200GHz, we can integrate
all RF (Radio Frequency) building blocks – such as Power Amplifier (PA),
Low Noise Amplifier (LNA), Mixer, Programmable Gain Amplifier (PGA),
Voltage Controlled Oscillator (VCO) – into a single chip.
This technology is already proven and fully qualified for Infineon
Millimeter and Microwave chipsets (e.g. 77GHz automotive radar).
Furthermore, Infineon houses this single-chip in a plastic package
which makes a major difference to the market. Up to now, solutions
have been bare die and require expensive tools and equipment to build
up a radio system. With the Infineon packaged chipset, customers can
save money and reduce the time-to-market significantly.
The chip is a transceiver for 57–64GHz (BGT60), housed in an
eWLB(6 × 6mm²) package.
V-Band TDD
Half Duplex System in TDD
Base Station A
Base Station B
I/F I/Q Upconversion
BGT60
BGT60
I/F I/Q Upconversion
I/F I/Q Downconversion
Tx or Rx
On
Rx or Tx
On
I/F I/Q Downconversion
Benefits of BGT60
„„ Packaged solution, easy to use and standard SMT flow for mounting
on customer system
„„ Highly integrated RF transceiver requiring no external
RF discretes, thereby simplifying the customer design and
time-to-market
„„ Architecture of Direct Conversion Zero IF eases interface to
latest modem/BB designs (no external filter)
„„ A transceiver approach with implemented BIST (Built-In Self-Test)
on the chip to enable RF testing at Infineon production
„„ Family concept (common architecture, package, pinning)
simplifies customer designs due to modular approach
Published by
Infineon Technologies AG
85579 Neubiberg, Germany
© 2013 Infineon Technologies AG.
All Rights Reserved.
Visit us:
www.infineon.com
Order Number: B132-H9781-G1-X-7600
Date: 08 / 2013
Transceiver Chip Solution
„„ BGT60 for ISM band (license free), 57–64GHz
„„ BGT60 has identical pinning and same footprint as
BGT70 or BGT80
„„ Channel, Tx or Rx, selection via SPI
Attention please!
The information given in this document shall in no event
be regarded as a guarantee of conditions or characteristics
(“Beschaffenheitsgarantie”). With respect to any examples
or hints given herein, any typical values stated herein and/
or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation
warranties of non-infringement of intellectual property
rights of any third party.
Information
For further information on technology, delivery terms and
conditions and prices please contact your nearest Infineon
Technologies Office (www.infineon.com).
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