UTC MMBT1015-GR-AL3-R Low frequency pnp amplifier transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBT1015
PNP SILICON TRANSISTOR
LOW FREQUENCY PNP
AMPLIFIER TRANSISTOR
3
3
1
FEATURES
2
*Collector-Emitter Voltage:
BVCEO=-50V
*Collector current up to 150mA
*High hFE linearity
*Complement to MMBT1815
SOT-23
1
2
SOT-523
3
3
2
1
SOT-113
2
1
SOT-323
*Pb-free plating product number: MMBT1015L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBT1015-x-AC3-R
MMBT1015L-x-AC3-R
MMBT1015-x-AE3-R
MMBT1015L-x-AE3-R
MMBT1015-x-AL3-R
MMBT1015L-x-AL3-R
MMBT1015-x-AN3-R
MMBT1015L-x-AN3-R
MMBT1015L-x-AC3-R
Package
SOT-113
SOT-23
SOT-323
SOT-523
Pin Assignment
1
2
3
E
B
C
E
B
C
E
B
C
E
B
C
Packing
Tape Reel
Tape Reel
Tape Reel
Tape Reel
(3)Rank
(1) R: Tape Reel
(2) AC3: SOT-113, AE3: SOT-23, AL3: SOT323,
AN 3: SOT-523
(3) x: refer to Classification of hFE1
(4)Lead Plating
(4) L: Lead Free Plating, Blank: Pb/Sn
(1)Packing Type
(2)Package Type
MARKING
A4
Lead Plating
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Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-015,E
MMBT1015
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING ( Ta=25°C , unless otherwise specified )
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
SOT-23
Collector Dissipation
SOT-523/SOT-113/SOT-323
Collector Current
Base Current
SYMBOL
VCBO
VCEO
VEBO
PC
IC
IB
RATINGS
-50
-50
-5
250
200
-150
-50
UNIT
V
V
V
mW
mW
mA
mA
Junction Temperature
TJ
125
℃
Storage Temperature
TSTG
-55 ~ +150
℃
Note Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cut-off Current
Emitter Cut-off Current
SYMBOL
BVCBO
BVCEO
BVEBO
VCE(SAT)
VBE(SAT)
ICBO
IEBO
hFE1
hFE2
fT
COB
DC Current Gain
Transition Frequency
Output Capacitance
Noise Figure
NF
TEST CONDITIONS
Ic = -100µA, IE = 0
Ic = -10mA, IB = 0
IE = -10µA, Ic = 0
Ic = -100mA, IB = -10mA
Ic = -100mA, IB = -10mA
VCB = -50V, IE = 0
VEB = -5V, Ic = 0
VCE = -6V, Ic = -2mA
VCE = -6V, Ic = -150mA
VCE = -10V, Ic = -1mA
VCB = -10V, IE = 0, f = 1MHz
Ic = -0.1mA, VCE = -6V
RG= 1kΩ, f = 100Hz
MIN
-50
-50
-5
120
25
80
TYP MAX UNIT
V
V
V
-0.1 -0.3
V
-1.1
V
-100 nA
-100 nA
700
4.0
7.0
MHz
pF
0.5
6
dB
CLASSIFICATION OF hFE1
RANK
RANGE
Y
120-240
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
GR
200-400
BL
350-700
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QW-R206-015,E
MMBT1015
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
Static Characteristics
DC Current Gain
3
10
Collector Current, Ic (mA)
-50
DC Current Gain, hFE
-40
I B =- 3 0 0µA
-30
I B =- 2 5 0µA
I B =-2 0 0 µA
-20
I B =- 1 5 0µA
I B =- 1 0 0µA
-10
V CE =-6V
2
10
1
10
I B =-5 0 µA
0
10
0
-0
-4
-8
-12
-16
-20
-1
-10
Collector-Emitter Voltage ( V)
0
-10
2
-10
3
-10
Collector Current , Ic (mA)
Base-Emitter on Voltage
Saturation Voltage
1
-10
2
-10
Ic=1 0* IB
Saturation Voltage (V)
C ollector Current, Ic (mA)
1
-10
V CE =-6V
1
-10
0
-10
-0. 2
-0. 4
-0.6
-0.8
-1. 0
-1
-10
V CE (S A T)
0
-10
1
-10
2
-10
Collector Current , Ic (mA)
Current Gain-Bandwidth
Product
Collector Output
Capacitance
-10
3
2
10
-1
-10
VCE =- 6V
C apacitance, C ob (pF)
Curr ent Gain-Bandwidth
product,fT (MHz)
V BE (S A T)
Base-Emitter Voltage (V)
3
10
2
10
1
10
0
10
0
-2
-10
-1
-10
-1
-10
0
-10
f=1 MH z
I E =0
1
10
0
10
-1
10
-1
-10
0
-10
1
-10
2
-10
Collector Current , Ic (mA)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
0
-10
1
-10
2
-10
3
-10
Collector- Base Voltage (V)
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QW-R206-015,E
MMBT1015
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-015,E
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