Rohm BD9104FVM-TR Synchronous buck converter integrated fet Datasheet

4.0V(or 4.5V) to 5.5V, 0.8A 1ch
Synchronous Buck Converter Integrated FET
BD9102FVM
BD9104FVM
General Description
Key Specifications
The BD9102FVM and BD9104FVM are ROHM’s high
efficiency step-down switching regulator designed to
produce a voltage as low as 1.24V from a supply
voltage of 5V. Offers high efficiency with our original
pulse skip control technology and synchronous
rectifier. It offers high efficiency by using synchronous
switches and provides fast transient response to
sudden load changes by implementing current mode
control.
 Input Voltage Range
BD9102FVM:
BD9104FVM:
 Output Voltage Range
BD9102FVM:
BD9104FVM:
 Output Current:
 Switching Frequency:
 Pch FET ON-Resistance:
 Nch FET ON-Resistance:
 Standby Current:
 Operating Temperature Range:
Features
 Fast Transient Response Because of Current Mode
PWM Control System.
 Highly Efficient for All Load Ranges Because of
Synchronous Rectifier (Nch/Pch FET) and SLLMTM
(Simple Light Load Mode)
 Soft-Start Function.
 Thermal Protection and UVLO Functions.
 Short-Circuit Protection with Time Delay Function.
 Shutdown Function
Package
4.0V to 5.5V
4.5V to 5.5V
1.24V ± 2%
3.30V ± 2%
0.8A(Max)
1.0MHz(Typ)
350mΩ(Typ)
250mΩ(Typ)
0μA(Typ)
-25°C to +85°C
W(Typ) x D(Typ) x H(Max)
Applications
Power supply for HDD, portable electronic devices like
PDA, and LSI including CPU and ASIC.
MSOP8
2.90 mm x 4.00 mm x 0.90 mm
Typical Application Circuit
Figure 1. Typical Application Circuit
Lineup
4.0V to 5.5V
1.24V±2%
UVLO Threshold
Voltage
(Typ)
2.7V
4.5V to 5.5V
3.30V±2%
4.1V
Input Voltage Range
Output Voltage Range
○Product structure:Silicon monolithic integrated circuit
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Package
Orderable
Part Number
MSOP8
Reel of 3000
BD9102FVM-TR
MSOP8
Reel of 3000
BD9104FVM-TR
○ This product has no designed protection against radioactive rays
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BD9102FVM
BD9104FVM
Pin Configuration
BD9102FVM BD9104FVM
(TOP VIEW)
1
VOUT
VCC
8
2
ITH
PVCC
7
3
EN
SW
6
4
GND
PGND
5
Figure 2. Pin Configuration
Pin Description
Pin No.
Pin Name
1
VOUT
2
ITH
Gmamp output pin/Connected to phase compensation capacitor
3
EN
Enable pin(Active High)
4
GND
5
PGND
6
SW
7
PVCC
8
VCC
Function
Output voltage detect pin
Ground pin
Power switch ground pin
Power switch node
Power switch supply pin
Power supply input pin
Block Diagram
VCC
PVCC
VCC
VOUT
Figure 3. BD9102FVM/ BD9104FVM Block Diagram
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BD9102FVM
BD9104FVM
Absolute Maximum Ratings (Ta=25°C)
Parameter
VCC Voltage
PVCC Voltage
EN Voltage
SW, ITH Voltage
Power Dissipation 1
Power Dissipation 2
Operating Temperature Range
Storage Temperature Range
Maximum Junction Temperature
Symbol
VCC
PVCC
VEN
SW,ITH
Pd1
Pd2
Topr
Tstg
Tjmax
Limit
(Note 1)
-0.3 to +7
(Note 1)
-0.3 to +7
-0.3 to +7
-0.3 to +7
(Note 2)
0.38
0.58 (Note 3)
-25 to +85
-55 to +150
+150
Unit
V
V
V
V
W
W
°C
°C
°C
(Note 1) Pd should not be exceeded.
(Note 2) Using the IC alone
(Note 3) Mounted on 1 layer 70mm×70mm×1.6mm Glass Epoxy PCB
Caution: Operating the IC over the absolute maximum ratings may damage the IC. The damage can either be a short circuit between pins or an open circuit
between pins and the internal circuitry. Therefore, it is important to consider circuit protection measures, such as adding a fuse, in case the IC is operated over
the absolute maximum ratings.
Recommended Operating Conditions (Ta=25°C)
Parameter
Symbol
VCC Voltage
PVCC Voltage
EN Voltage
SW Average Output Current
BD9102FVM
BD9104FVM
Min
Max
Min
Max
Unit
VCC
4.0
5.5
4.5
5.5
V
PVCC (Note 4)
4.0
5.5
4.5
5.5
V
VEN
0
VCC
0
VCC
V
ISW (Note 4)
-
0.8
-
0.8
A
(Note 4) Pd should not be exceeded.
Electrical Characteristics
BD9102FVM(Ta=25°C,VCC=5V,VEN=VCC unless otherwise specified.)
Parameter
Symbol
Min
Typ
Standby Current
Bias Current
ISTB
-
Max
Unit
0
10
μA
Conditions
EN=GND
ICC
-
250
400
μA
EN Low Voltage
VENL
-
GND
0.8
V
Standby Mode
EN High Voltage
VENH
2.0
VCC
-
V
Active Mode
EN Input Current
IEN
-
1
10
μA
VEN=5V
Oscillation Frequency
fOSC
0.8
1
1.2
MHz
(Note 5)
RONP
-
0.35
0.60
Ω
PVCC=5V
Nch FET ON-Resistance (Note 5)
RONN
-
0.25
0.50
Ω
PVCC=5V
Output Voltage
VOUT
1.215
1.24
1.265
V
ITH Sink Current
ITHSI
10
20
-
μA
VOUT=H
ITH Source Current
ITHSO
10
20
-
μA
VOUT=L
UVLO Threshold Voltage
VUVLOTh
2.6
2.7
2.8
V
VCC=H To L
UVLO Hysteresis Voltage
VUVLOHys
50
100
200
mV
tSS
0.5
1
2
ms
tLATCH
0.5
1
2
ms
Pch FET ON-Resistance
Soft-Start Time
Timer Latch Time
(Note 5) Design Guarantee (Outgoing inspection is not done on all products)
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BD9102FVM
BD9104FVM
Electrical Characteristics - continued
BD9104FVM(Ta=25°C,VCC=5V,VEN=VCC unless otherwise specified.)
Parameter
Symbol
Min
Typ
Max
Unit
Standby Current
ISTB
-
0
10
μA
Bias Current
ICC
-
250
400
μA
Conditions
EN=GND
EN Low Voltage
VENL
-
GND
0.8
V
Standby Mode
EN High Voltage
VENH
2.0
VCC
-
V
Active Mode
VEN=5V
EN Input Current
IEN
-
1
10
μA
Oscillation Frequency
fOSC
0.8
1
1.2
MHz
-
0.35
0.60
Ω
PVCC=5V
PVCC=5V
Pch FET ON-Resistance
(Note 5)
RONP
Nch FET ON-Resistance
(Note 5)
RONN
-
0.25
0.50
Ω
VOUT
3.234
3.300
3.366
V
ITH Sink Current
ITHSI
10
20
-
μA
VOUT=H
ITH Source Current
ITHSO
10
20
-
μA
VOUT=L
UVLO Threshold Voltage
VUVLOTh
3.9
4.1
4.3
V
VCC=H To L
UVLO Hysteresis Voltage
VUVLOHys
50
100
200
mV
tSS
0.5
1
2
ms
tLATCH
0.5
1
2
ms
Output Voltage
Soft-Start Time
Timer Latch Time
(Note 5) Design Guarantee (Outgoing inspection is not done on all products)
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BD9104FVM
Typical Performance Curves
■VCC-VOUT
Ta=25°C
[BD9102FVM]
[BD91024FVM]
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
Ta=25°C
Input Voltage: VCC [V]
Input Voltage: VCC [V]
Figure 4. Output Voltage vs Input Voltage
Figure 5. Output Voltage vs Input Voltage
■VEN-VOUT
VCC=5V
Ta=25°C
[BD9102FVM]
[BD9104FVM]
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
VCC=5V
Ta=25°C
EN Voltage: VEN [V]
EN Voltage: VEN [V]
Figure 7. Output Voltage vs EN Voltage
Figure 6. Output Voltage vs EN Voltage
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BD9102FVM
BD9104FVM
Typical Performance Curves – continued
■IOUT-VOUT
VCC=5V
Ta=25°C
[BD9102FVM]
[BD9104FVM]
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
VCC=5V
Ta=25°C
Output Current: IOUT [A]
Output Current: IOUT [A]
Figure 8. Output Voltage vs Output Current
Figure 9. Output Voltage vs Output Current
Typical Waveforms
■Soft-Start
[BD9104FVM]
[BD9102FVM]
VCC = PVCC = EN
VCC = PVCC = EN
VOUT
VOUT
Ta=25°C
Ta=25°C
Figure 11. Soft-Start Waveform
Figure 10. Soft-Start Waveform
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BD9102FVM
BD9104FVM
Typical Waveforms – continued
■SW Waveform IO=10mA
[BD102FVM]
[BD104FVM]
SW
SW
SW
VOUT
VOUT
VOUT
VCC=5V
Ta=25°C
VCC=5V
Ta=25°C
Figure 12. SW Waveform
(IO=10mA, SLLMTM Control)
Figure 13. SW Waveform
(IO=10mA, SLLMTM Control)
■SW Waveform IO=200mA
[BD9102FVM]
[BD9104FVM]
SW
SW
VOUT
VOUT
VCC=5V
Ta=25°C
VCC=5V
Ta=25°C
Figure 14. SW Waveform
(IO=200mA, PWM Control)
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Figure 15. SW Waveform
(IO=200mA, PWM Control)
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BD9102FVM
BD9104FVM
Typical Waveforms – continued
■Transient Response IO=100mA to 600mA
[BD9102FVM]
[BD9104FVM]
VOUT
VOUT
IOUT
IOUT
VCC=5V
Ta=25°C
VCC=5V
Ta=25°C
Figure 17. Transient Response
(IO=100mA to 600mA, 10μs)
Figure 16. Transient Response
(IO=100mA to 600mA, 10μs)
■Transient Response IO=600mA to 100mA
VOUT
VOUT
[BD9102FVM]
[BD9104FVM]
IOUT
IOUT
VCC=5V
Ta=25°C
VCC=5V
Ta=25°C
Figure 19. Transient Response
(IO=600mA to100mA, 10μs)
Figure 18. Transient Response
(IO=600mA to100mA, 10μs)
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BD9102FVM
BD9104FVM
Typical Performance Curves – continued
■Ta-VOUT
VCC=5V
[BD9102FVM]
[BD9104FVM]
Output Voltage: VOUT [V]
Output Voltage: VOUT [V]
VCC=5V
Temperature: Ta [°C]
Temperature: Ta [°C]
Figure 20. Output Voltage vs Temperature
Figure 21. Output Voltage vs Temperature
■Efficiency
Ta=25°C
Efficiency: η[%]
Efficiency: η [%]
Ta=25°C
[BD9104FVM]
[BD9102FVM]
Output Current: IOUT [mA]
Output Current: IOUT [mA]
Figure 22. Efficiency vs Output Current
(VCC=EN=5V,VOUT=1.24V)
Figure 23. Efficiency vs Output Current
(VCC=EN=5V,VOUT=3.3V)
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BD9102FVM
BD9104FVM
Typical Performance Curves – continued
■Reference Characteristics
VCC=5V
BD9102FVM
BD9104FVM
NMOS ON-Resistance: RONN [Ω]
Frequency: fOSC [MHz]
VCC=5V
Temperature: Ta [°C]
Temperature: Ta [°C]
Figure 24. Frequency vs Temperature
Figure 25. NMOS ON-Resistance vs Temperature
VCC=5V
BD9102FVM
BD9104FVM
EN Voltage: VEN [V]
VCC=5V
PMOS ON-Resistance: RONP [Ω]
BD9102FVM
BD9104FVM
Temperature: Ta [°C]
Temperature: Ta [°C]
Figure 26. PMOS ON-Resistance vs Temperature
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BD9102FVM
BD9104FVM
Figure 27. EN Voltage vs Temperature
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BD9102FVM
BD9104FVM
Typical Performance Curves – continued
Ta=25°C
BD9102FVM
BD9104FVM
Frequency: fOSC [MHz]
Circuit Current: ICC [µ]
VCC=5V
Temperature: Ta [°C]
Input Voltage: VCC [V]
Figure 28. Circuit Current vs Temperature
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BD9102FVM
BD9104FVM
Figure 29. Frequency vs Input Voltage
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BD9102FVM
BD9104FVM
Application Information
1.
Operation
BD9102FVM and BD9104FVM are synchronous step-down switching regulators that achieve fast transient response by
employing a current mode PWM control system. They utilize switching operation either in PWM (Pulse Width
Modulation) mode for heavier load, or SLLM TM (Simple Light Load Mode) operation for lighter load to improve efficiency.
(1) Synchronous Rectifier
Integrated synchronous rectification using two MOSFETS reduces power dissipation and increases efficiency when
compared to converters using external diodes. Internal shoot-through current limiting circuit further reduces power
dissipation.
(2) Current Mode PWM Control
The PWM control signal of this IC depends on two feedback loops, the voltage feedback and the inductor current
feedback.
(a)
PWM (Pulse Width Modulation) Control
The clock signal coming from OSC has a frequency of 1Mhz. When OSC sets the RS latch, the P-Channel
MOSFET is turned ON and the N-Channel MOSFET is turned OFF. The opposite happens when the current
comparator (Current Comp) resets the RS latch i.e. the P-Channel MOSFET is turned OFF and the N-Channel
MOSFET is turned ON. Current Comp’s output is a comparison of two signals, the current feedback control
signal “SENSE” which is a voltage proportional to the current IL, and the voltage feedback control signal, FB.
(b)
SLLMTM (Simple Light Load Mode) Control
When the control mode is shifted by PWM from heavier load to lighter load or vice versa, the switching pulse is
designed to turn OFF with the device held operating in normal PWM control loop. This allows linear operation
without voltage drop or deterioration in transient response during the sudden load changes. Although the PWM
control loop continues to operate with a SET signal from OSC and a RESET signal from Current Comp, it is so
designed such that the RESET signal is continuously sent even if the load is changed to light mode where the
switching is tuned OFF and the switching pulses disappear. Activating the switching discontinuously reduces the
switching dissipation and improves the efficiency.
SENSE
Current
Comp
VOUT
Level
Shift
FB
RESET
Gm Amp.
ITH
R Q
IL
SET S
Driver
Logic
VOUT
SW
Load
OSC
Figure 30. Diagram of Current Mode PWM Control
PVCC
Current
Comp
SENSE
PVCC
SENSE
Current
Comp
FB
FB
SET
GND
SET
GND
RESET
GND
RESET
GND
SW
GND
SW
IL
GND
IL(AVE)
VOUT
IL
0A
VOUT
VOUT(AVE)
VOUT(AVE)
Not switching
Figure 32. SLLMTM Switching Timing Diagram
Figure 31. PWM Switching Timing Diagram
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BD9102FVM
2.
BD9104FVM
Description of Functions
(1) Soft-Start Function
During start-up, the soft-start circuit gradually establishes the output voltage to limit the input current. This prevents the
overshoot in the output voltage and inrush current.
(2) Shutdown Function
When the EN terminal is “low”, the device operates in Standby Mode and all functional blocks, such as reference
voltage circuit, internal oscillator and drivers, are turned OFF. Circuit current during standby is 0μA (Typ).
(3) UVLO Function
The UVLO circuit detects whether the supplied input voltage is sufficient to obtain the output voltage of this IC. The
UVLO threshold, which has a hysteresis of 50mV to 300mV (Typ), prevents output bouncing.
(4) BD9102FVM BD9104FVM
tSS=1msec(Typ)
Hysteresis 100mV
VCC
EN
VOUT
tSS
tSS
tSS
Soft start
Standby mode
Operating mode
Standby
mode
Standby
mode
Operating mode
UVLO
UVLO
Operating mode
EN
Standby mode
UVLO
Figure 33. Soft Start, Shutdown, UVLO Timing Chart
(5) Short-Circuit Protection with Time Delay Function
To protect the IC from breakdown, the short-circuit protection turns the output OFF when the internal current limiter is
activated continuously for at least 1 ms. The output that is kept off may be turned ON again by restarting EN or by
resetting UVLO.
EN
Output OFF
latch
VOUT
Limit
IL
1msec
Standby
mode
Standby
mode
Operating mode
EN
Timer latch
Operating mode
EN
Figure 34. Short-Circuit Protection with Time Delay Timing Diagram
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BD9102FVM
3.
BD9104FVM
Information on Advantages
Advantage 1:Offers fast transient response by using current mode control system
Conventional product (VOUT of which is 3.3 volts)
BD9104FVM(Load response IO=100mA to 600mA)
VOUT
VOUT
228mV
110mV
IOUT
IOUT
Voltage drop due to sudden change in load was reduced by 50%.
Figure 35. Comparison of Transient Response
Achieves efficiency improvement for lighter load
(b)
For heavier load:
This IC utilizes the synchronous rectifying mode and uses low ON-Resistance
power MOSFETs.
Efficiency: η [%]
Advantage 2: Offers high efficiency for all load ranges
(a)
For lighter load:
This IC utilizes the current control mode called SLLMTM, which reduces various dissipation such as switching
dissipation (PSW ), gate charge/discharge dissipation, ESR dissipation of output capacitor (PESR) and ON-Resistance
dissipation (PRON) that may otherwise cause reduction in efficiency.
100
TM
SLLM
②
50
①
PWM
① improvement by SLLMTM system
②improvement by synchronous rectifier
ON-Resistance of P-Channel MOSFET: 0.35 Ω (Typ)
ON-Resistance of N-Channel MOSFET: 0.25 Ω (Typ)
0
0.001
0.01
0.1
Output Current IO [A]
1
Figure 36. Efficiency
Achieves efficiency improvement for heavier load
Offers high efficiency for all load ranges with the improvements mentioned above.
Advantage 3:・Supplied in smaller package like MOSP8 due to small-sized power MOSFET
・Allows reduction in size of application products
・Output capacitor (CO) required for current mode control: 10 μF ceramic capacitor
・Inductance (L) required for the operating frequency of 1 MHz: 4.7 μH inductor
Reduces mounting area requirement
VCC
15mm
CIN
RITH
DC/DC
Convertor
Controller
L
RITH
VOUT
CIN
L
10mm
CITH
CO
CO
CITH
Figure 37. Example Application
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BD9102FVM
4.
BD9104FVM
Switching Regulator Efficiency
Efficiency (η) may be expressed by the equation shown below:

VOUT  I OUT
P
POUT
 100%  OUT  100% 
 100%
VIN  I IN
PIN
POUT  Pd 
Efficiency may be improved by reducing the switching regulator power dissipation factors Pdα as follows:
Dissipation factors:
2
1) ON-Resistance dissipation of inductor and FET:Pd(I R)
 
Pd I 2 R  I OUT  RCOIL  RON 
2
Where:
RCOIL is the DC resistance of inductor.
RON is the ON-Resistance of FET.
IOUT is the output current.
2) Gate charge/discharge dissipation:Pd(Gate)
Pd Gate  C gs  f  V
Where:
Cgs is the gate capacitance of FET.
f is the switching frequency.
V is the gate driving voltage of FET.
3) Switching dissipation:Pd(SW)
Pd SW  
VIN  C RSS  I OUT  f
I DRIVE
2
Where:
CRSS is the reverse transfer capacitance of FET.
IDRIVE is the peak current of gate.
4) ESR dissipation of capacitor:Pd(ESR)
Pd ESR   I RMS  ESR
2
Where:
IRMS is the Ripple current of capacitor.
ESR is the Equivalent series resistance.
5) Operating current dissipation of IC:Pd(IC)
Pd IC  VIN  I CC
Where:
ICC is the Circuit current.
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BD9102FVM
5.
BD9104FVM
Consideration on Permissible Dissipation and Heat Generation
Since these ICs function with high efficiency without significant heat generation in most applications, no special
consideration is needed on permissible dissipation or heat generation. In case of extreme conditions, however, including
lower input voltage, higher output voltage, heavier load, and/or higher temperature, the permissible dissipation and/or heat
generation must be carefully considered.
For dissipation, only conduction losses due to DC resistance of inductor and ON-Resistance of FET are considered. This
is because conduction losses are the most significant among other dissipations mentioned above such as gate
charge/discharge dissipation and switching dissipation.
1000
①Mounted on 1 layer 70mm x 70mm x 1.6mm

Power Dissipation:Pd [mW]
θj-a=212.8°C/W
800
② Using the IC alone
θj-a=322.6°C/W
Where:
D is the ON duty (=VOUT/VCC).
RCOIL is the DC resistance of coil.
RONP is the ON-Resistance of P-Channel MOS FET.
RONN is the ON-Resistance of N-Channel MOS FET.
IOUT is the Output current.
①587.4mW
600
②387.5mW
400
200
0
0
25
50
75 85 100

P  I OUT 2  RCOIL  RON
RON  D  RONP  1  D RONN
glass epoxy PCB
125
150
Ambient Temperature:Ta [°C]
Figure 38. Thermal Derating Curves
If VCC=5V, VOUT=3.3V, RCOIL=0.15Ω, RONP=0.35Ω, RONN=0.25Ω
IOUT=0.8A, for example,
D=VOUT/VCC=3.3/5=0.66
RON=0.66×0.35+(1-0.66)×0.25
=0.231+0.085
=0.316[Ω]
P=0.82×(0.15+0.316) = 298[mV]
Since RONP is greater than RONN in this IC, the dissipation increases as the ON duty increases. Taking into consideration
the dissipation shown above, thermal design must be carried out with sufficient margin.
6.
Selection of Components Externally Connected
(1) Selection of inductor (L)
IL
ΔIL
VCC
The inductance significantly depends on the output ripple current.
As seen in equation (1), the ripple current decreases as the inductor
and/or switching frequency increases.
IL 
IL
VOUT
L
L  VCC  f
・・・(1)
Appropriate output ripple current should be ±30% of the maximum
output current.
Co
Figure 39. Output Ripple Current
VCC  VOUT  VOUT A
IL  0.3  I OUT max A
L
VCC  VOUT  VOUT H 
I L  VCC  f
・・・(2)
・・・(3)
Where:
ΔIL is the Output ripple current, and
f is the Switching frequency.
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(a) Current exceeding the current rating of the inductor results in magnetic saturation of the inductor, which decreases
efficiency.
The inductor must be selected allowing sufficient margin with which the peak current may not exceed its current
rating.
If VCC=5V, VOUT=3.3V, f=1MHz, ΔIL=0.3×0.8A=0.24A, for example,
L
5  3.3  3.3  4.675  4.7H 
0.24  5  1M
(b) Select an inductor with low resistance component (such as DCR and ACR) to minimize dissipation in the inductor
for better efficiency.
(2) Selection of output capacitor (CO)
VCC
Output capacitor should be selected with the consideration of stability region and
equivalent series resistance required to minimize the ripple voltage.
Output ripple voltage is determined by the equation (4):
VOUT
L
VOUT  I L  ESRV  ・・・(4)
ESR
Where:
ΔIL is the Output ripple current, and
ESR is the Equivalent series resistance of output capacitor.
CO
* Rating of the capacitor should be determined allowing sufficient margin
against output voltage. Less ESR allows reduction in output ripple voltage.
Figure 40. Output Capacitor
Since the output rise time is designed to fall within the soft-start time, the capacitance of output capacitor should be
determined with consideration on the requirements of equation (5):
CO 

t SS I LIMIT  I OUT・・・(5)
VOUT
Where:
tSS is the Soft-Start time.
ILIMIT is the Over current detection level, 2A(Typ).
In case of BD9104FVM, for instance, and if VOUT=3.3V, IOUT=0.8A, and tSS=1ms,
CO 
1m  2  0.8
 364F 
3.3
Rating of the capacitor should be determined to allow a sufficient margin against output voltage. A 10 μF to 100 μF
ceramic capacitor is recommended.
(3) Selection of input capacitor (CIN)
VCC
CIN
Input capacitor must be a low ESR capacitor with capacitance sufficient to cope
with high ripple current to prevent high transient voltage. The ripple current IRMS
is given by the equation (6):
VOUT
L
CO
I RMS  I OUT 

VCC VCC  VOUT

VCC
A ・・・(6)
< Worst case > IRMS(max)
When VCC is twice the VOUT ,
Figure 41. Input Capacitor
IOUT
2
If VCC=5V, VOUT=3.3V, and IOUTmax=0.8A,
I RMS  0.8 

5 5  3.3
5


 0.46 ARMS

A low ESR 10μF/10V ceramic capacitor is recommended to reduce ESR dissipation of input capacitor for better
efficiency.
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(4) Calculating RITH, CITH for Phase Compensation
Since the Current Mode Control is designed to limit an inductor current, a pole (phase lag) appears in the low frequency
area due to a RC filter consisting of an output capacitor and a load resistance, while a zero (phase lead) appears in the
high frequency area due to the output capacitor and its ESR. Therefore, the phases are easily compensated by
adding a zero to the power amplifier output with C and R as described below to cancel a pole at the power amplifier.
fp(Min)
fp 
A
Gain
[dB]
fp(Max)
0
fZ(ESR)
IOUT MIN
Phase
[deg]
1
2  ESR  CO
f Z  ESR  
IOUT MAX
0
Pole at power amplifier
When the output current decreases, the load resistance Ro
increases and the pole frequency decreases.
-90
fp Min  
1
Hz   with lighter load
2  ROMax  Co
fp Max 
1
Hz   with heavier load
2  ROMin  Co
Figure 42. Open Loop Gain Characteristics
A
fZ(Amp.)
Gain
[dB]
Zero at power amplifier
0
Phase
[deg]
1
2  RO  CO
Increasing capacitance of the output capacitor lowers the pole
frequency while the zero frequency does not change. (This
is because when the capacitance is doubled, the capacitor
ESR is reduced to half.)
0
-90
f Z ( Amp .) 
Figure 43. Error Amp Phase Compensation Characteristics
VCC
CIN
VOUT
EN
VCC,PVCC
L
SW
VOUT
ITH
ESR
GND,PGND
1
2  RITH  C ITH
VOUT
RO
CO
RITH
CITH
Figure 44. Typical Application
Stable feedback loop may be achieved by canceling the pole fp (Min) produced by the output capacitor and the load
resistance with RC zero correction by the error amplifier.
f Z  Amp .  f P  Min 

1
2  RITH  CITH

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BD9102FVM
7.
BD9104FVM
BD9102FVM and BD9104FVM Cautions on PC Board Layout
1
VOUT
2
ITH
VCC
8
PVCC
7
RITH
VCC
CIN
VEN
3
EN
4
GND
SW
6
PGND
5
①
L
VOUT
CITH
CO
②
③
GND
Figure 45. Layout Diagram
(1) For the sections drawn with heavy line, use thick conductor pattern as short as possible.
(2) Layout the input ceramic capacitor CIN near the PVCC and PGND pins, and the output capacitor CO near PGND pin.
(3) Layout CITH and RITH between the pins ITH and GND as close as possible with least necessary wiring.
Table1.Recommended parts list of application [BD9102FVM]
Symbol
Part
Value
Manufacturer
L
Inductor
4.7μH
Sumida
Series
CMD6D11B
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106M10A
CO
Ceramic capacitor
10μF
Kyocera
CM316X5R106M10A
CITH
RITH
Ceramic capacitor
Resistor
330pF
30kΩ
Murata
ROHM
GRM18series
MCR10 3002
Table2. Recommended parts list of application [BD9104FVM]
Symbol
Part
Value
Manufacturer
L
Inductor
4.7μH
Sumida
Series
CMD6D11B
CIN
Ceramic capacitor
10μF
Kyocera
CM316X5R106M10A
CO
Ceramic capacitor
10μF
Kyocera
CM316X5R106M10A
CITH
RITH
Ceramic capacitor
Resistor
330pF
51kΩ
Murata
ROHM
GRM18series
MCR10 5102
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BD9102FVM
BD9104FVM
I/O Equivalent Circuit
1pin(VOUT)
VCC
10kΩ
VOUT
2pin(ITH)
3pin(EN)
VCC
VCC
VCC
ITH
EN
2.8MΩ
10kΩ
2.2kΩ
6pin(SW)
PVCC
PVCC
PVCC
SW
Figure 46. I/O Equivalent Circuit
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Operational Notes
1.
Reverse Connection of Power Supply
Connecting the power supply in reverse polarity can damage the IC. Take precautions against reverse polarity when
connecting the power supply, such as mounting an external diode between the power supply and the IC’s power supply
terminals.
2.
Power Supply Lines
Design the PCB layout pattern to provide low impedance supply lines. Separate the ground and supply lines of the
digital and analog blocks to prevent noise in the ground and supply lines of the digital block from affecting the analog
block. Furthermore, connect a capacitor to ground at all power supply pins. Consider the effect of temperature and aging
on the capacitance value when using electrolytic capacitors.
3.
Ground Voltage
Ensure that no pins are at a voltage below that of the ground pin at any time, even during transient condition.
4.
Ground Wiring Pattern
When using both small-signal and large-current GND traces, the two ground traces should be routed separately but
connected to a single ground at the reference point of the application board to avoid fluctuations in the small-signal
ground caused by large currents. Also ensure that the ground traces of external components do not cause variations on
the ground voltage. The ground lines must be as short and thick as possible to reduce line impedance.
5.
Thermal Consideration
Should by any chance the power dissipation rating be exceeded, the rise in temperature of the chip may result in
deterioration of the properties of the chip. The absolute maximum rating of the Pd stated in this specification is when the
IC is mounted on a 70mm x 70mm x 1.6mm glass epoxy board. In case of exceeding this absolute maximum rating,
increase the board size and copper area to prevent exceeding the Pd rating.
6.
Recommended Operating Conditions
These conditions represent a range within which the expected characteristics of the IC can be approximately obtained.
The electrical characteristics are guaranteed under the conditions of each parameter.
7.
Inrush Current
When power is first supplied to the IC, it is possible that the internal logic may be unstable and inrush current may flow
instantaneously due to the internal powering sequence and delays, especially if the IC has more than one power supply.
Therefore, give special consideration to power coupling capacitance, power wiring, width of ground wiring, and routing
of connections.
8.
Operation Under Strong Electromagnetic Field
Operating the IC in the presence of a strong electromagnetic field may cause the IC to malfunction.
9.
Testing on Application Boards
When testing the IC on an application board, connecting a capacitor directly to a low-impedance output pin may subject
the IC to stress. Always discharge capacitors completely after each process or step. The IC’s power supply should
always be turned OFF completely before connecting or removing it from the test setup during the inspection process. To
prevent damage from static discharge, ground the IC during assembly and use similar precautions during transport and
storage.
10. Inter-Pin Short and Mounting Errors
Ensure that the direction and position are correct when mounting the IC on the PCB. Incorrect mounting may result in
damaging the IC. Avoid nearby pins being shorted to each other especially to ground. Inter-pin shorts could be due to
many reasons such as metal particles, water droplets (in very humid environment) and unintentional solder bridge
deposited in between pins during assembly to name a few.
11. Unused Input Terminals
Input terminals of an IC are often connected to the gate of a MOS transistor. The gate has extremely high impedance
and extremely low capacitance. If left unconnected, the electric field from the outside can easily charge it. The small
charge acquired in this way is enough to produce a significant effect on the conduction through the transistor and cause
unexpected operation of the IC. So unless otherwise specified, unused input terminals should be connected to the
power supply or ground line.
.
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12. Regarding Input Pins of the IC
This monolithic IC contains P+ isolation and P substrate layers between adjacent elements in order to keep them
isolated. P-N junctions are formed at the intersection of the P layers with the N layers of other elements, creating a
parasitic diode or transistor. For example (refer to figure below):
When GND > Pin A and GND > Pin B, the P-N junction operates as a parasitic diode.
When GND > Pin B, the P-N junction operates as a parasitic transistor.
Parasitic diodes inevitably occur in the structure of the IC. The operation of parasitic diodes can result in mutual
interference among circuits, operational faults, or physical damage. Therefore, conditions that cause these diodes to
operate, such as applying a voltage lower than the GND voltage to an input pin (and thus to the P substrate) should be
avoided.
Resistor
Transistor (NPN)
Pin A
Pin B
Pin A
N
P
+
N
P
P
+
N
C
Pin B
B
E
Parasitic
element
N
P
+
N
P substrate
Parasitic element
GND
P
P
+
B
N
E
P substrate
Parasitic element
GND
C
GND
Parasitic
GND element
Other adjacent elements
Example of monolithic IC structure
13. Thermal Shutdown Circuit (TSD)
The IC incorporates a built-in thermal shutdown circuit, which is designed to turn OFF the IC when the internal
temperature of the IC reaches a specified value. It is not designed to protect the IC from damage or guarantee its
operation. Do not continue to operate the IC after this function is activated. Do not use the IC in conditions where this
function will always be activated.
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BD9102FVM
BD9104FVM
Ordering Information
B
D
9
1
0
F
x
Part Number
BD9102FVM
BD9104FVM
V
M -
Package
FVM: MSOP8
TR
Packaging and forming specification
TR: Embossed tape and reel
4.0V to 5.5V
1.24V±2%
UVLO Threshold
Voltage
(Typ)
2.7V
4.5V to 5.5V
3.30V±2%
4.1V
Input Voltage Range
Output Voltage Range
Package
Orderable
Part Number
MSOP8
Reel of 3000
BD9102FVM-TR
MSOP8
Reel of 3000
BD9104FVM-TR
Marking Diagram
(TOP VIEW)
(TOP VIEW)
MSOP8
MSOP8
D
0
9
1
2
Part Number Marking
D
LOT Number
0
9
1
4
1PIN MARK
LOT Number
1PIN MARK
BD9102FVM
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BD9104FVM
Physical Dimension, Tape and Reel information
Package Name
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BD9102FVM
BD9104FVM
Revision History
Date
Revision
2.Mar.2012
5.Apr.2012
24.Oct.2013
001
002
003
Changes
New release
Modify Typical Application Circuit
• Applied new style and improved understandability.
• Deleted the descriptions of BD9106FVM from this datasheet and summarized it to the
datasheet of [BD9106FVM, BD9107FVM, BD9109FVM, BD9110NV,BD9120HFN].
• Add Revision History
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Datasheet
Notice
Precaution on using ROHM Products
1.
Our Products are designed and manufactured for application in ordinary electronic equipments (such as AV equipment,
OA equipment, telecommunication equipment, home electronic appliances, amusement equipment, etc.). If you
(Note 1)
, transport
intend to use our Products in devices requiring extremely high reliability (such as medical equipment
equipment, traffic equipment, aircraft/spacecraft, nuclear power controllers, fuel controllers, car equipment including car
accessories, safety devices, etc.) and whose malfunction or failure may cause loss of human life, bodily injury or
serious damage to property (“Specific Applications”), please consult with the ROHM sales representative in advance.
Unless otherwise agreed in writing by ROHM in advance, ROHM shall not be in any way responsible or liable for any
damages, expenses or losses incurred by you or third parties arising from the use of any ROHM’s Products for Specific
Applications.
(Note1) Medical Equipment Classification of the Specific Applications
JAPAN
USA
EU
CHINA
CLASSⅢ
CLASSⅡb
CLASSⅢ
CLASSⅢ
CLASSⅣ
CLASSⅢ
2.
ROHM designs and manufactures its Products subject to strict quality control system. However, semiconductor
products can fail or malfunction at a certain rate. Please be sure to implement, at your own responsibilities, adequate
safety measures including but not limited to fail-safe design against the physical injury, damage to any property, which
a failure or malfunction of our Products may cause. The following are examples of safety measures:
[a] Installation of protection circuits or other protective devices to improve system safety
[b] Installation of redundant circuits to reduce the impact of single or multiple circuit failure
3.
Our Products are designed and manufactured for use under standard conditions and not under any special or
extraordinary environments or conditions, as exemplified below. Accordingly, ROHM shall not be in any way
responsible or liable for any damages, expenses or losses arising from the use of any ROHM’s Products under any
special or extraordinary environments or conditions. If you intend to use our Products under any special or
extraordinary environments or conditions (as exemplified below), your independent verification and confirmation of
product performance, reliability, etc, prior to use, must be necessary:
[a] Use of our Products in any types of liquid, including water, oils, chemicals, and organic solvents
[b] Use of our Products outdoors or in places where the Products are exposed to direct sunlight or dust
[c] Use of our Products in places where the Products are exposed to sea wind or corrosive gases, including Cl2,
H2S, NH3, SO2, and NO2
[d] Use of our Products in places where the Products are exposed to static electricity or electromagnetic waves
[e] Use of our Products in proximity to heat-producing components, plastic cords, or other flammable items
[f] Sealing or coating our Products with resin or other coating materials
[g] Use of our Products without cleaning residue of flux (even if you use no-clean type fluxes, cleaning residue of
flux is recommended); or Washing our Products by using water or water-soluble cleaning agents for cleaning
residue after soldering
[h] Use of the Products in places subject to dew condensation
4.
The Products are not subject to radiation-proof design.
5.
Please verify and confirm characteristics of the final or mounted products in using the Products.
6.
In particular, if a transient load (a large amount of load applied in a short period of time, such as pulse. is applied,
confirmation of performance characteristics after on-board mounting is strongly recommended. Avoid applying power
exceeding normal rated power; exceeding the power rating under steady-state loading condition may negatively affect
product performance and reliability.
7.
De-rate Power Dissipation (Pd) depending on Ambient temperature (Ta). When used in sealed area, confirm the actual
ambient temperature.
8.
Confirm that operation temperature is within the specified range described in the product specification.
9.
ROHM shall not be in any way responsible or liable for failure induced under deviant condition from what is defined in
this document.
Precaution for Mounting / Circuit board design
1.
When a highly active halogenous (chlorine, bromine, etc.) flux is used, the residue of flux may negatively affect product
performance and reliability.
2.
In principle, the reflow soldering method must be used; if flow soldering method is preferred, please consult with the
ROHM representative in advance.
For details, please refer to ROHM Mounting specification
Notice - GE
© 2014 ROHM Co., Ltd. All rights reserved.
Rev.002
Datasheet
Precautions Regarding Application Examples and External Circuits
1.
If change is made to the constant of an external circuit, please allow a sufficient margin considering variations of the
characteristics of the Products and external components, including transient characteristics, as well as static
characteristics.
2.
You agree that application notes, reference designs, and associated data and information contained in this document
are presented only as guidance for Products use. Therefore, in case you use such information, you are solely
responsible for it and you must exercise your own independent verification and judgment in the use of such information
contained in this document. ROHM shall not be in any way responsible or liable for any damages, expenses or losses
incurred by you or third parties arising from the use of such information.
Precaution for Electrostatic
This Product is electrostatic sensitive product, which may be damaged due to electrostatic discharge. Please take proper
caution in your manufacturing process and storage so that voltage exceeding the Products maximum rating will not be
applied to Products. Please take special care under dry condition (e.g. Grounding of human body / equipment / solder iron,
isolation from charged objects, setting of Ionizer, friction prevention and temperature / humidity control).
Precaution for Storage / Transportation
1.
Product performance and soldered connections may deteriorate if the Products are stored in the places where:
[a] the Products are exposed to sea winds or corrosive gases, including Cl2, H2S, NH3, SO2, and NO2
[b] the temperature or humidity exceeds those recommended by ROHM
[c] the Products are exposed to direct sunshine or condensation
[d] the Products are exposed to high Electrostatic
2.
Even under ROHM recommended storage condition, solderability of products out of recommended storage time period
may be degraded. It is strongly recommended to confirm solderability before using Products of which storage time is
exceeding the recommended storage time period.
3.
Store / transport cartons in the correct direction, which is indicated on a carton with a symbol. Otherwise bent leads
may occur due to excessive stress applied when dropping of a carton.
4.
Use Products within the specified time after opening a humidity barrier bag. Baking is required before using Products of
which storage time is exceeding the recommended storage time period.
Precaution for Product Label
QR code printed on ROHM Products label is for ROHM’s internal use only.
Precaution for Disposition
When disposing Products please dispose them properly using an authorized industry waste company.
Precaution for Foreign Exchange and Foreign Trade act
Since our Products might fall under controlled goods prescribed by the applicable foreign exchange and foreign trade act,
please consult with ROHM representative in case of export.
Precaution Regarding Intellectual Property Rights
1.
All information and data including but not limited to application example contained in this document is for reference
only. ROHM does not warrant that foregoing information or data will not infringe any intellectual property rights or any
other rights of any third party regarding such information or data. ROHM shall not be in any way responsible or liable
for infringement of any intellectual property rights or other damages arising from use of such information or data.:
2.
No license, expressly or implied, is granted hereby under any intellectual property rights or other rights of ROHM or any
third parties with respect to the information contained in this document.
Other Precaution
1.
This document may not be reprinted or reproduced, in whole or in part, without prior written consent of ROHM.
2.
The Products may not be disassembled, converted, modified, reproduced or otherwise changed without prior written
consent of ROHM.
3.
In no event shall you use in any way whatsoever the Products and the related technical information contained in the
Products or this document for any military purposes, including but not limited to, the development of mass-destruction
weapons.
4.
The proper names of companies or products described in this document are trademarks or registered trademarks of
ROHM, its affiliated companies or third parties.
Notice - GE
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Datasheet
General Precaution
1. Before you use our Pro ducts, you are requested to care fully read this document and fully understand its contents.
ROHM shall n ot be in an y way responsible or liabl e for fa ilure, malfunction or acci dent arising from the use of a ny
ROHM’s Products against warning, caution or note contained in this document.
2. All information contained in this docume nt is current as of the issuing date and subj ect to change without any prior
notice. Before purchasing or using ROHM’s Products, please confirm the la test information with a ROHM sale s
representative.
3.
The information contained in this doc ument is provi ded on an “as is” basis and ROHM does not warrant that all
information contained in this document is accurate an d/or error-free. ROHM shall not be in an y way responsible or
liable for an y damages, expenses or losses incurred b y you or third parties resulting from inaccur acy or errors of or
concerning such information.
Notice – WE
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Datasheet
BD9102FVM - Web Page
Buy
Distribution Inventory
Part Number
Package
Unit Quantity
Minimum Package Quantity
Packing Type
Constitution Materials List
RoHS
BD9102FVM
MSOP8
3000
3000
Taping
inquiry
Yes
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