DMP2040UFDF P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits RDS(ON) max ID max TC = +25°C 32mΩ @ VGS = -4.5V -13A 53mΩ @ VGS = -2.5V -10A BVDSS -20V Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. 0.6mm Profile – Ideal for Low Profile Applications PCB Footprint of 4mm2 Low Gate Threshold Voltage Low On-Resistance Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Case: U-DFN2020-6 (Type F) Case Material: Molded Plastic, ―Green‖ Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish – NiPdAu over Copper Leadframe. Solderable per MIL-STD-202, Method 208 e4 Weight: 0.0065 grams (Approximate) Battery Management Application Power Management Functions DC-DC Converters U-DFN2020-6 (Type F) D G Pin1 S Pin Out Bottom View Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP2040UFDF-7 DMP2040UFDF-13 Notes: Case U-DFN2020-6 (Type F) U-DFN2020-6 (Type F) Packaging 3,000/Tape & Reel 10,000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green‖ products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com/products/packages.html. Marking Information Date Code Key Year Code Month Code 2016 D Jan 1 2017 E Feb 2 DMP2040UFDF Document number: DS38984 Rev. 1 - 2 Mar 3 YM 4D 4D = Product Type Marking Code YM = Date Code Marking Y = Year (ex: D = 2016) M = Month (ex: 9 = September) 2018 F Apr 4 2019 G May 5 Jun 6 1 of 7 www.diodes.com 2020 H Jul 7 2021 I Aug 8 Sep 9 2022 J Oct O 2023 K Nov N Dec D August 2016 © Diodes Incorporated DMP2040UFDF Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -4.5V Steady State Continuous Drain Current (Note 7) VGS = -4.5V Steady State Symbol VDSS VGSS Value -20 ±12 Units V V ID -6.1 -4.9 A ID -13 -10 A TA = +25°C TA = +70°C TC = +25°C TC = +70°C Pulsed Drain Current (10μs pulse, duty cycle = 1%) IDM Continuous Source-Drain Diode Current (Note 6) Avalanche Current (Note 8) L = 0.1mH Avalanche Energy (Note 8) L = 0.1mH IS IAS EAS A A A mJ -17 14 Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Total Power Dissipation (Note 5) Symbol PD TA = +25°C Steady State t<10s TA = +25°C Steady State t<10s Steady State Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 7) Operating and Storage Temperature Range RθJA PD RθJA RθJC TJ, TSTG Value 0.8 149 95 1.8 70 45 16 -55 to +150 Units W °C/W W °C/W °C/W °C Electrical Characteristics (TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 9) Drain-Source Breakdown Voltage Symbol Min Typ Max Unit -1 V VGS = 0V, ID = -250µA µA VDS = -16V, VGS = 0V 100 nA VGS = ±12V, VDS = 0V V VDS = VGS, ID = -250µA BVDSS -20 Zero Gate Voltage Drain Current IDSS Gate-Source Leakage ON CHARACTERISTICS (Note 9) Gate Threshold Voltage IGSS VGS(TH) -0.6 22 -1.5 31 -0.7 53 -1.2 Static Drain-Source On-Resistance RDS(ON) 32 VSD Ciss Reverse Transfer Capacitance Coss Crss Gate Resistance RG Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -8V) Gate-Source Charge Gate-Drain Charge Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 10) Input Capacitance Output Capacitance mΩ pF VDS = -10V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz Qg Qg Qgs nC VDS = -6V, ID = -8.9A ns VDD = -6V, RL = 6Ω VGS = -4.5V, RG = 6Ω, ID = -1A tD(ON) Turn-On Rise Time tR Turn-Off Delay Time tD(OFF) tF — — ns — — nC Notes: VGS = -2.5V, ID = -6.9A VGS = 0V, IS = -2.9A Qgd Body Diode Reverse Recovery Charge VGS = -4.5V, ID = -8.9A V Turn-On Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Test Condition tRR QRR IF = -8.9A, di/dt = -100A/μs IF = -8.9A, di/dt = -100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Thermal resistance from junction to soldering point (on the exposed drain pad). 8. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 9. Short duration pulse test used to minimize self-heating effect. 10. Guaranteed by design. Not subject to product testing. DMP2040UFDF Document number: DS38984 Rev. 1 - 2 2 of 7 www.diodes.com August 2016 © Diodes Incorporated DMP2040UFDF 20.0 20 VGS = -2.5V VDS = -5V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS = -3.0V 15.0 VGS = -2.0V VGS = -4.0V 10.0 VGS = -4.5V 5.0 VGS = -1.5V VGS = -1.2V 5 TJ= 85oC TJ= 25oC TJ= -55oC TJ= 125oC VGS = -1.0V 0 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1. Typical Output Characteristic 0.04 VGS = -2.5V 0.03 VGS = -4.5V 0.01 0 0 0.5 1 1.5 2 2.5 VGS, GATE-SOURCE VOLTAGE (V) 3 Figure 2. Typical Transfer Characteristic 0.05 0.02 0 2 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 10 TJ= 150oC 0.0 0.5 ID = -8.9A 0.4 0.3 0.2 0.1 ID = -6.9A 0 0 3 6 9 12 15 ID, DRAIN-SOURCE CURRENT (A) Figure 3. Typical On-Resistance vs Drain Current and Gate Voltage 0.05 1 2 3 4 5 6 7 8 9 10 11 12 VGS, GATE-SOURCE VOLTAGE (V) Figure 4. Typical Transfer Characteristic 1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 15 VGS = - 4.5V 0.04 TJ = 150oC TJ = 125oC TJ = 85oC 0.03 TJ = 25oC 0.02 TJ = -55oC 0.01 VGS = -4.5V, ID = -8.9A 1.2 VGS = -2.5V, ID = -6.9A 0.9 0.6 0 0 5 10 15 20 ID, DRAIN CURRENT (A) Figure 5. Typical On-Resistance vs Drain Current and Temperature DMP2040UFDF Document number: DS38984 Rev. 1 - 2 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6. On-Resistance Variation with Temperature August 2016 © Diodes Incorporated 0.06 1.2 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-RESISTANCE () DMP2040UFDF 0.05 VGS = -2.5V, ID = -6.9A 0.04 0.03 0.02 VGS = -4.5V, ID = -8.9A 0.01 1 ID = -1mA 0.8 0.6 ID = -250µA 0.4 0.2 0 0 -50 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7. On-Resistance Variation with Temperature 20 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 8. Gate Threshold Variation vs Junciton Temperature 10000 f = 1MHz CT, JUNCTION CAPACITANCE (pF) IS, SOURCE CURRENT (A) VGS = 0V 15 TJ = 150oC 10 TJ = 125oC TJ = 85oC 5 TJ = 25oC TJ = -55oC 0 Coss 100 Crss 10 0 0.3 0.6 0.9 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 9. Diode Forward Voltage vs. Current 1.2 0 8 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 10. Typical Junction Capacitance 20 100 RDS(ON) Limited 7 ID, DRAIN CURRENT (A) 6 5 VGS (V) Ciss 1000 4 3 VDS = -6V, ID = -8.9A 2 1 2 4 6 8 10 12 Qg (nC) Figure 11. Gate Charge DMP2040UFDF Document number: DS38984 Rev. 1 - 2 14 16 4 of 7 www.diodes.com DC PW = 10s 0.1 0.01 0 PW = 100µs 10 1 0 PW = 1ms PW = 1s TJ(Max) = 150℃ TC = 25℃ PW = 100ms Single Pulse DUT on 1*MRP Board VGS = -4.5V PW = 10ms 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 12. SOA, Safe Operation Area 100 August 2016 © Diodes Incorporated DMP2040UFDF 1 D=0.9 D=0.7 r(t), TRANSIENT THERMAL RESISTANCE D=0.5 D=0.3 0.1 D=0.1 D=0.05 0.01 D=0.02 D=0.01 RθJA (t) = r(t) * RθJA RθJA = 147℃/W Duty Cycle, D = t1/t2 D=0.005 D=Single Pulse 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, PULSE DURATION TIME (sec) Figure 13. Transient Thermal Resistance DMP2040UFDF Document number: DS38984 Rev. 1 - 2 5 of 7 www.diodes.com August 2016 © Diodes Incorporated DMP2040UFDF Package Outline Dimension Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) A3 A1 A Seating Plane D e3 e4 k2 D2a E z2 D2 E2a E2 k1 k z1 e z(4x) e2 L b U-DFN2020-6 (Type F) Dim Min Max Typ A 0.57 0.63 0.60 A1 0.00 0.05 0.03 A3 0.15 b 0.25 0.35 0.30 D 1.95 2.05 2.00 D2 0.85 1.05 0.95 D2a 0.33 0.43 0.38 E 1.95 2.05 2.00 E2 1.05 1.25 1.15 E2a 0.65 0.75 0.70 e 0.65 BSC e2 0.863 BSC e3 0.70 BSC e4 0.325 BSC k 0.37 BSC k1 0.15 BSC k2 0.36 BSC L 0.225 0.325 0.275 z 0.20 BSC z1 0.110 BSC z2 0.20 BSC All Dimensions in mm Suggested Pad Layout Please see http://www.diodes.com/package-outlines.html for the latest version. U-DFN2020-6 (Type F) X3 C Y3 Dimensions Y X Y2 Y1 Y4 X1 C X X1 X2 X3 Y Y1 Y2 Y3 Y4 Value (in mm) 0.650 0.400 0.480 0.950 1.700 0.425 0.800 1.150 1.450 2.300 Pin1 X2 DMP2040UFDF Document number: DS38984 Rev. 1 - 2 6 of 7 www.diodes.com August 2016 © Diodes Incorporated DMP2040UFDF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. 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