UTC MJD210G-TN3-T Pnp silicon dpak for surface mount application Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MJD210
PNP SILICON TRANSISTOR
PNP SILICON DPAK FOR
SURFACE MOUNT
APPLICATIONS
„
1
DESCRIPTION
TO-252
The UTC MJD210 is designed for low voltage, low-power,
high-gain audio amplifier applications.
„
FEATURE
1
*Collector-Emitter Sustaining Voltage
VCEO(SUS) =-25V (Min) @ IC =-10mA
*High DC Current Gain
hFE =70 (Min) @ IC=-500mA
=45 (Min) @ IC=-2A
=10 (Min) @ IC=-5A
*Lead Formed for Surface Mount Applications in
Plastic Sleeves (No Suffix)
*Straight Lead Version in Plastic Sleeves (“-1” Suffix)
*Lead Formed Version in 16mm Tape and Reel
(“T4” Suffix)
*Low Collector – Emitter Saturation Voltage
VCE(SAT) = -0.3V (Max) @ IC =-500mA
= -0.75V (Max) @ IC = -2.0 A
*High Current-Gain-Bandwidth Product
fT = 65 MHz (Min) @ IC = -100 mA
*Annular Construction for Low Leakage
ICBO = -100 nA @ Rated VCB
„
TO-251
ORDERING INFORMATION
Ordering Number
Lead Free Plating
Halogen Free
MJD210L-TM3-T
MJD210G-TM3-T
MJD210L-TN3-T
MJD210G-TN3-T
MJD210L-TN3-R
MJD210G-TN3-R
www.unisonic.com.tw
Copyright © 2007 Unisonic Technologies Co., Ltd
Package
TO-251
TO-252
TO-252
Pin Assignment
1
2
3
B
C
E
B
C
E
B
C
E
Packing
Tube
Tube
Tape Reel
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MJD210
„
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-Base Voltage
VCBO
-40
V
Collector-Emitter Voltage
VCEO
-25
V
Emitter-Base Voltage
VEBO
-7
V
I
A
Continuous
-5
C
Collector Current
Peak
-10
A
Base Current
IB
-1
A
TC=25°C
12.5
W
Derate above 25°C
0.1
W/°C
Total Device Dissipation
PD
Ta=25°C (Note2)
1.4
W
Derate above 25°C
0.011
W/°C
Junction Temperature
TJ
+150
°C
-65 ~ +150
Storage Junction Temperature
TSTG
°C
Note: 1.Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. When surface mounted on minimum pad sizes recommended.
„
THERMAL DATA (Ta=25°C, unless otherwise specified)
PARAMETER
Junction to Ambient
Junction to Case
„
SYMBOL
θJA
θJC
RATING
89.3
10
UNIT
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltage(Note 1) VCEO(SUS) IC=-10mA, IB=0
VCB=-40V, IE=0
Collector Cutoff Current
ICBO
VCB=-40V, IE=0, TJ=125°C
Emitter Cutoff Current
IEBO
VBE=-7V, IC=0
ON CHARACTERISTICS
IC=-500mA, VCE=-1V
DC Current Gain (Note 1)
hFE
IC=-2A, VCE=-1V
IC=-5A, VCE=-2V
IC=-500mA, IB=-50mA
Collector-Emitter Saturation Voltage (Note 1) VCE(SAT) IC=-2A, IB=-200mA
IC=-5A, IB=-1A
Base-Emitter Saturation Voltage (Note 1)
VBE(SAT) IC=-5A, IB=-1A
Base-Emitter On Voltage (Note 1)
VBE(ON) IC=-2A, VCE=-1V
DYNAMIC CHARACTERISTICS
IC=-100mA, VCE=-10V,
Current-Gain-Bandwidth Product (Note 2)
fT
fTEST = 10MHz
Output Capacitance
COB
VCB=-10V, IE=0, f=0.1MHz
Note: 1. Pulse Test: Pulse Width = 300μs, Duty Cycle ≈ 2%.
2. fT =|hFE|‧fTEST.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
MAX
UNIT
-100
-100
-100
V
nA
nA
nA
-25
70
45
10
180
-0.3
-0.75
-1.8
-2.5
-1.6
65
V
V
V
MHz
120
pF
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MJD210
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
„
Power Derating
T A TC
2.5 25
Switching Time Test Circuit
Power Dissipation ,PD (W)
VDS=10V
ID=6V
2
VCC
25
µs
20
1
TA
10
(Surface Mount )
51
tr,tf≤10ns
Duty Cycle=1%
TC
0
5
0
25
50
75
100
RB and RC Varied to Obtain Desired Current Levels
D1 Must be Fast Recovery Type, e.g.:
1N5825 Used Above IB ≈ 100mA for PNP Test
Circuit MSD6100 Used Below IB≈100mA Reverse
All Polaritries
150
125
Turn-Off Time
Turn-On Time
1000
300
200
D1
-4V
Temperature,T(℃)
500
SCOPE
RB
-9V
0.5
10K
tD
5K
3K
tF
2K
100
Time, t(ns)
Time, t(ns)
RC
+11V
1.5 15
+30V
50
30
500
300
200
10
100
50
30
20
(VCC=30V,IC/IB=10,IB1=IB2,TJ=25℃)
10
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5
Collector Current, IC (A)
10
Voltage,V(V)
DC Current Gain,hFE
10
tF
1K
20
5
3
(VCC=30V,IC/IB=10,TJ=25℃)
2
1
0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5
Collector Current,IC (A)
tS
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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MJD210
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS (Cont.)
„
Capacitance
Temperature Current (A)
200
*Applies For IC/IB≤hEF/3
+2
Cib
TJ=25℃
+1.5
25℃ to 150℃
+1
+0.5
0
Capacitance ,C (pF)
Temperature Coefficients ,θV (mV/℃)
+2.5
*θVC for VCE(SAT)
-55℃ to 25℃
25℃ to 150℃
-0.5
-55℃ to 25℃
-1
-1.5
θVB for VBE
100
70
50
Cob
30
-2
-2.5
0.05 0.07 0.1
0.2 0.3 0.5 0.7 1
2
3
20
5
0.4 0.5 1
2
4
6
10
20
40
Reverse Voltage, VR (V)
Transient Thermal Resistence
(Normalized) ,r(t)
Collector Current, IC(A)
Active Region Safe Operating Area
10
5
1ms
3
2
1
There are two limitations on the power handling
ability of a transistor: average junction temperature
and second breakdown. Safe operating area curves
indicate IC-VCE limits of the transistor that must be
observed for reliable operation; i.e., the transistor must
not be subjected to greater dissipation than the curves
indicate.
The data of Fig. 9 is based on TJ(pk)=150℃; Tc is
variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk)150℃. TJ(pk) may be calculated from the data
in Figure 8. At high case temperatures, thermal
limitations will reduce the power that can be handled to
values less than the limitations imposed by second
breakdown.
100µ
500µ
TJ=150℃
DC
5ms
__ _ __ _Bonding Wire Limited
__ __ __ Thermally Limited @TC=25℃
(Singel Pulse)
0.1 _______ Second Breakdown Limited
Curves Aplly Below
Rated VCEO
0.01
2 3 5 7 10
1
0.3
Collector-Emitter Voltage, VCE (V)
20
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
30
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MJD210
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R213-001.C
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