2M x 32-Bit Dynamic RAM Module HYM 322035S/GS-50/-60/-70 Advanced Information • 2 097 152 words by 32-bit organization • 1 memory bank • Fast access and cycle time 50 ns access time 84 ns cycle time (-50 version) 60 ns access time 104 ns cycle time (-60 version) 70 ns access time 124 ns cycle time (-70 version) • Hyper page mode - EDO capability 35 ns cycle time (-50 version) 40 ns cycle time (-60 version) 45 ns cycle time (-70 version) • Single + 5 V (± 10 %) supply • Low power dissipation max. 2640 mW active (-50 version) max. 2420 mW active (-60 version) max. 2200 mW active (-70 version) CMOS – 22 mW standby TTL –44 mW standby • CAS-before-RAS refresh RAS-only-refresh Hidden-refresh • 4 decoupling capacitors mounted on substrate • All inputs, outputs and clocks fully TTL compatible • 72 pin Single in-Line Memory Module (L-SIM-72-9 ) with 20.32 mm (800 mil) height • Utilizes four 2M × 8 -DRAMs in 400 mil SOJ packages • 2048 refresh cycles / 32 ms with 11/10 addressing • Optimized for use in byte-write non-parity applications • Tin-Lead contact pads (S-version) • Gold contact pads (GS - version) Semiconductor Group Semicunductor 1 2.96 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module The HYM 322035S/GS-50/-60/-70 is a 8 MByte DRAM module organized as 2 097 152 words by 32-bit in a 72-pin single-in-line package comprising four HYB 5117805BSJ 2M × 8 EDO-DRAMs in 400 mil wide SOJ-packages mounted together with four 0.2 µF ceramic decoupling capacitors on a PC board. Each HYB 5117805BSJ is described in the data sheet and is fully electrical tested and processed according to SIEMENS standard quality procedure prior to module assembly. After assembly onto the board, a further set of electrical tests is performed. The speed of the module can be detected by the use of four presence detect pins. The common I/O feature on the HYM 322035S/GS-60/-70 dictates the use of early write cycles. Ordering Information Type Package Description HYM 322035S-50 L-SIM-72-9 EDO-DRAM Module (access time 50 ns) HYM 322035S-60 L-SIM-72-9 EDO-DRAM Module (access time 60 ns) HYM 322035S-70 L-SIM-72-9 EDO-DRAM Module (access time 70 ns) HYM 322035GS-50 L-SIM-72-9 EDO-DRAM Module (access time 50 ns) HYM 322035GS-60 L-SIM-72-9 EDO-DRAM Module (access time 60 ns) HYM 322035GS-70 L-SIM-72-9 EDO-DRAM Module (access time 70 ns) Semiconductor Group Ordering Code 2 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module Pin Configuration Pin Names VSS DQ16 DQ17 DQ18 DQ19 N.C. A1 A3 A5 A10 DQ20 DQ21 DQ22 DQ23 N.C. A8 N.C. N.C. 1 DQ0 2 3 DQ1 4 5 DQ2 6 7 DQ3 8 9 VCC 10 11 A0 12 13 A2 14 15 A4 16 17 A6 18 19 DQ4 20 21 DQ5 22 23 DQ6 24 25 DQ7 26 27 A7 28 29 VCC 30 31 A9 32 33 RAS2 34 35 N.C. 36 N.C. VSS CAS2 CAS1 N.C. WE DQ8 DQ9 DQ10 DQ11 DQ12 VCC DQ13 DQ14 DQ15 PD0 PD2 N.C. 37 N.C. 38 39 CAS0 40 41 CAS3 42 43 RAS0 44 45 N.C. 46 47 N.C. 48 49 DQ24 50 51 DQ25 52 53 DQ26 54 55 DQ27 56 57 DQ28 58 59 DQ29 60 61 DQ30 62 63 DQ31 64 65 N.C. 66 67 PD1 68 69 PD3 70 71 VSS 72 Semiconductor Group A0R-A10R Row Address Inputs A0C-A9C Column Address Inputs DQ0-DQ31 Data Input/Output CAS0 - CAS3 Column Address Strobe RAS0, RAS2 Row Address Strobe WE Read/Write Input VCC Power (+ 5 V) VSS Ground PD Presence Detect Pin N.C. No Connection Presence Detect Pins 3 -50 -60 -70 PD0 N.C. N.C. N.C. PD1 N.C. N.C. N.C. PD2 VSS N.C. VSS PD3 VSS N.C. N.C. HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module RAS0 CAS0 CAS DQ0-DQ7 RAS I/O1-I/O8 OE D1 CAS1 CAS DQ8-DQ15 RAS I/O1-I/O8 OE D2 RAS2 CAS2 CAS DQ16-DQ23 RAS I/O1-I/O8 OE D3 CAS3 CAS DQ24-DQ31 I/O1-I/O8 OE D4 A0R - A10R, A0C - A9C D1 - D4 WE D1 - D4 VCC C1 - C 4 VSS Block Diagram Semiconductor Group RAS 4 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module Absolute Maximum Ratings Operation temperature range ......................................................................................... 0 to + 70 °C Storage temperature range......................................................................................... – 55 to 125 °C Input/output voltage ............................................................................–0.5V to min (Vcc+0.5, 7.0) V Power supply voltage...................................................................................................... – 1 to + 7 V Power dissipation..................................................................................................................... 4.2 W Data out current (short circuit) ................................................................................................ 50 mA Note: Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage of the device. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. DC Characteristics TA = 0 to 70 °C, VCC = 5 V ± 10 % Parameter Symbol Limit Values Unit Test Condition min. max. 2.4 Vcc+0.5 V 1) Input low voltage VIH VIL – 0.5 0.8 V 1) Output high voltage (IOUT = – 5 mA) VOH 2.4 – V 1) Output low voltage (IOUT = 4.2 mA) VOL – 0.4 V 1) Input leakage current (0 V < VIN < 6.5 V, all other pins = 0 V) II(L) – 10 10 µA 1) Output leakage current (DO is disabled, 0 V < VOUT < 5.5 V) IO(L) – 10 10 µA 1) Average VCC supply current (RAS, CAS, address cycling, tRC = tRC min) -50 version -60 version -70 version ICC1 – – – 480 440 400 mA mA mA 2),3),4) Standby VCC supply current (RAS = CAS = VIH) ICC2 – 8 mA Average VCC supply current during RAS only refresh cycles (RAS cycling, CAS = VIH, tRC = tRC min) -50 version -60 version -70 version ICC3 – – – 480 440 400 mA mA mA Input high voltage Semiconductor Group 5 2), 4) HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module DC Characteristics1) (cont’d) Parameter Symbol Average VCC supply current during hyper page mode - EDO (RAS = VIL, CAS, address cycling, tPC = tPC min) -50 version -60 version -70 version ICC4 Standby VCC supply current (RAS = CAS = VCC – 0.2 V) ICC5 Average VCC supply current during CAS-before-RAS refresh mode (RAS, CAS cycling, tRC = tRC min) -50 version -60 version -70 version ICC6 Limit Values Unit Test Condition 2), 3), 4) min. max. – – – 280 220 180 mA mA mA – 4 mA – – – 480 440 400 mA mA mA 2), 4) Capacitance TA = 0 to 70 °C, VCC = 5 V ± 10 %, f = 1 MHz Parameter Symbol Limit Values Unit min. max. – 40 pF Input capacitance (RAS0, RAS2) CI1 CI2 – 45 pF Input capacitance (CAS0 - CAS3) CI3 – 45 pF Input capacitance (WE) CI4 – 45 pF I/O capacitance (DQ0-DQ31) CIO – 25 pF Input capacitance (A0 to A11) Semiconductor Group 6 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module AC Characteristics 5)6) TA = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 2 ns Parameter 16E Limit Values Symbol -50 Unit Note -60 -70 min. max. min. max. min. max. common parameters Random read or write cycle time tRC 84 – 104 – 124 – ns RAS precharge time tRP 30 – 40 – 50 – ns RAS pulse width tRAS 50 10k 60 10k 70 10k ns CAS pulse width tCAS 8 10k 10 10k 12 10k ns Row address setup time tASR 0 – 0 – 0 – ns Row address hold time tRAH 8 – 10 – 10 – ns Column address setup time tASC 0 – 0 – 0 – ns Column address hold time tCAH 8 – 10 – 12 – ns RAS to CAS delay time tRCD 12 37 14 45 14 53 ns RAS to column address delay tRAD 10 25 12 30 12 35 ns RAS hold time tRSH 13 15 – 17 – ns CAS hold time tCSH 40 50 – 60 – ns CAS to RAS precharge time tCRP 5 – 5 – 5 – ns Transition time (rise and fall) tT 1 50 1 50 1 50 ns Refresh period tREF – 32 – 32 – 32 ms Access time from RAS tRAC – 50 – 60 – 70 ns 8, 9 Access time from CAS tCAC – 13 – 15 – 17 ns 8, 9 Access time from column address tAA – 25 – 30 – 35 ns 8,10 Column address to RAS lead time tRAL 25 – 30 – 35 – ns Read command setup time tRCS 0 – 0 – 0 – ns Read command hold time tRCH 0 – 0 – 0 – ns 11 Read command hold time referenced to RAS tRRH 0 – 0 – 0 – ns 11 CAS to output in low-Z tCLZ 0 – 0 – 0 – ns 8 Output buffer turn-off delay tOFF 0 13 0 15 0 17 ns 12 7 Read Cycle Semiconductor Group 7 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module AC Characteristics (cont’d) 5)6) TA = 0 to 70 °C,VCC = 5 V ± 10 %, tT = 2 ns Parameter 16E Limit Values Symbol -50 Unit Note -60 -70 min. max. min. max. min. max. Early Write Cycle Write command hold time tWCH 8 – 10 – 10 – ns Write command pulse width tWP 8 – 10 – 10 – ns Write command setup time tWCS 0 – 0 – 0 – ns Write command to RAS lead time tRWL 13 – 15 – 17 – ns Write command to CAS lead time tCWL 13 – 15 – 17 – ns Data setup time tDS 0 – 0 – 0 – ns 16 Data hold time tDH 8 – 10 – 12 – ns 16 Hyper page mode (EDO) cycle time tHPC 20 – 25 – 30 – ns CAS precharge time tCP 8 – 10 – 10 – ns Access time from CAS precharge tCPA – 27 – 32 – 37 ns Output data hold time tCOH 5 – 5 – 5 – ns RAS pulse width in EDO mode tRAS 50 200k 60 200k 70 200k ns CAS precharge to RAS Delay tRHPC 27 – 32 – 37 – ns CAS setup time tCSR 10 – 10 – 10 – ns CAS hold time tCHR 10 – 10 – 10 – ns RAS to CAS precharge time tRPC 5 – 5 – 5 – ns Write to RAS precharge time tWRP 10 – 10 – 10 – ns Write hold time referenced to RAS tWRH 10 – 10 – 10 – ns 15 Hyper Page Mode (EDO) Cycle CAS-before-RAS Refresh Cycle Semiconductor Group 8 7 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module Notes: 1) All voltages are referenced to VSS . 2) ICC1, ICC3, ICC4 and ICC6 depend on cycle rate. 3) ICC1 and ICC4 depend on output loading. Specified values are obtained with the output open. 4) Address can be changed once or less while RAS = Vil. In case of ICC4 it can be changed once or less during a hyper page mode (EDO) cycle. 5) An initial pause of 200 µs is required after power-up followed by 8 RAS cycles of which at least one cycle has to be a refresh cycle, before proper device operation is achieved. In case of using the internal refresh counter, a minimum of 8 CAS-before-RAS initialization cycles instead of 8 RAS cycles are required. 6) AC measurements assume tT = 2 ns. 7) VIH (min.) and VIL (max.) are reference levels for measuring timing of input signals. Transition times are also measured between VIH and VIL. 8) Measured with a load equivalent to 2 TTL loads and 50 pF, (Vol = 0.8 V and Voh = 2.0 V) . 9) Operation within the tRCD (max.) limit ensures that tRAC (max.) can be met. tRCD (max.) is specified as a reference point only. If tRCD is greater than the specified tRCD (max.) limit, then access time is controlled by tCAC. 10) Operation within the tRAD (max.) limit ensures that tRAC (max.) can be met. tRAD (max.) is specified as a reference point only. If tRAD is greater than the specified tRAD (max.) limit, then access time is controlled by tAA. 11) Either tRCH or tRRH must be satisfied for a read cycle. 12) tOFF (max.) define the time at which the output achieves the open-circuit conditions and are not referenced to output voltage levels. tOFF is referenced from the rising edge of RAS or CAS, whichever occurs last. 13) tWCS is not a restrictive operating parameter. This is included in the data sheet as electrical characteristics only. If tWCS > tWCS (min.), the cycle is an early write cycle and data out pin will remain open-circuit (high impedance) through the entire cycle. 14) These parameters are referenced to the CAS leading edge. Semiconductor Group 9 HYM 322035S/GS-50/-60/-70 2M × 32-Bit EDO-Module Package Outline Dimensions in mm GLS05789 Module Package L-SIM-72-9 (Single in-Line Memory Module) Semiconductor Group 10