CYStech Electronics Corp. Spec. No. : C223B3 Issued Date : 2012.10.03 Revised Date : Page No. : 1/8 General Purpose NPN Epitaxial Planar Transistor BTD5974B3 Description The BTD5974B3 is designed for use in output amplifier of portable radios in class B push pull operation. Features • High collector current , IC = 1.5A • Low VCE(sat) • Complementary to BTB5974B3. Symbol BTD5974B3 B：Base C：Collector E：Emitter Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating Junction and Storage Temperature Range BTD5974B3 Symbol VCBO VCEO VEBO IC PD Tj ; Tstg Limits 40 25 6 1.5 400 -55~+150 Unit V V V A mW °C CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223B3 Issued Date : 2012.10.03 Revised Date : Page No. : 2/8 Characteristics (Ta=25°C) Symbol BVCBO BVCEO BVEBO ICBO IEBO *VCE(sat) *VCE(sat) *VCE(sat) *VBE(sat) VBE(on) hFE 1 *hFE 2 *hFE 3 fT Cob Min. 40 25 6 150 180 100 100 - Typ. 6 Max. 100 100 60 0.3 0.35 1.2 1 390 - Unit V V V nA nA mV V V V V MHz pF Test Conditions IC=100μA IC=2mA IE=100μA VCB=35V VEB=6V IC=50mA, IB=2.5mA IC=400mA, IB=20mA IC=500mA, IB=50mA IC=500mA, IB=50mA VCE=1V, IC=10mA VCE=3V, IC=5mA VCE=3V, IC=100mA VCE=3V, IC=1A VCE=10V, IC=50mA, f=100MHz VCB=10V, f=1MHz *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% Ordering Information Device BTD5974B3-0-BK-G BTD5974B3-0-TB-G BTD5974B3 Package Shipping TO-92SP 1000 pcs / bag, 10 bags/box (Pb-free lead plating and halogen-free package) TO-92SP 3000 pcs / tape & box (Pb-free lead plating and halogen-free package) CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223B3 Issued Date : 2012.10.03 Revised Date : Page No. : 3/8 Typical Characteristics Emitter Grounded Output Characteristics Emitter Grounded Output Characteristics 0.35 1.4 1mA Collector Current---IC(A) Collector Current---IC(A) 5mA 1.2 0.3 0.25 0.2 500uA 400uA 300uA 0.15 0.1 200uA 0.05 1 0.8 2.5mA 2mA 0.6 1.5mA 0.4 0.2 IB=100uA 0 IB=500uA 0 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) 6 0 1 2 3 4 5 Collector-to-Emitter Voltage---VCE(V) Current Gain vs Collector Current Current Gain vs Collector Current Current Gain---HFE Ta=125°C Ta= 75°C Ta= 25°C Ta=0°C Ta=-40°C 100 Current Gain---HFE 1000 1000 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 100 VCE=2V VCE=1V 10 10 1 10 100 1000 Collector Current---IC(mA) 1 10000 Current Gain vs Collector Current 10 100 1000 Collector Current---IC(mA) 10000 Saturation Voltage vs Collector Current Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 100 1000 VCESAT@IC=20IB Saturation Voltage---(mV) 1000 Current Gain---HFE 6 100 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C VCE=5V 10 10 1 BTD5974B3 10 100 1000 Collector Current---IC(mA) 10000 1 10 100 1000 Collector Current---IC(mA) 10000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223B3 Issued Date : 2012.10.03 Revised Date : Page No. : 4/8 Typical Characteristics(Cont.) Saturation Voltage vs Collector Current Saturation Voltage vs Collector Current 1000 10000 VCESAT@IC=100IB 100 Saturation Voltage---(mV) Saturation Voltage---(mV) VCESAT@IC=50IB Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 10 1000 Ta=125°C Ta=75°C Ta=25°C Ta=0°C Ta=-40°C 100 10 1 10 100 1000 Collector Current---IC(mA) 10000 1 10 10000 10000 On Voltage---(mV) 1000 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C 10 100 1000 Collector Current---IC(mA) 1000 100 100 1 Ta=-40°C Ta=0°C Ta=25°C Ta=75°C Ta=125°C VBEON@VCE=1V VBESAT@IC=50IB Saturation Voltage---(mV) 10000 On Voltage vs Collector Current Saturation Voltage vs Collector Current 1 10000 10 100 1000 Collector Current---IC(mA) 10000 Cutoff Frequency vs Collector Current Capacitance vs Reverse-biased Voltage 1000 100 Cutoff Frequency---fT(MHz) Cib Capacitance---(pF) 100 1000 Collector Current---IC(mA) 10 Cob VCE=10V 100 10 1 0.1 BTD5974B3 1 10 Reverse-biased Voltage---VR(V) 100 1 10 100 Collector Current---IC(mA) 1000 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223B3 Issued Date : 2012.10.03 Revised Date : Page No. : 5/8 Typical Characteristics(Cont.) Power Derating Curve Power Dissipation---PD(mW) 450 400 350 300 250 200 150 100 50 0 0 50 100 150 200 Ambient Temperature --- TA(℃ ) BTD5974B3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223B3 Issued Date : 2012.10.03 Revised Date : Page No. : 6/8 TO-92SP Taping Outline DIM A1 A T d d1 P P0 P2 F1,F2 △h W W0 W1 W2 H H0 L1 D0 t1 t2 P1 △P BTD5974B3 Item Component body width Component body height Component body thickness Lead wire diameter Lead wire diameter 1 Pitch of component Feed hole pitch Hole center to component center Lead to lead distance Component alignment, F-R Type width Hole down tape width Hole position Hole down tape position Height of component from tape center Lead wire clinch height Lead wire (tape portion) Feed hole diameter Taped lead thickness Carrier tape thickness Position of hole Component alignment Millimeters Min. 3.80 2.95 1.32 0.33 0.41 12.40 12.50 6.05 2.20 -1.00 17.50 5.50 8.50 19.00 15.50 3.80 0.35 0.15 3.55 -1.00 Max. 4.20 3.35 1.72 0.43 0.51 13.00 12.90 6.65 2.80 1.00 19.00 6.50 9.50 1.00 21.00 16.50 2.50 4.20 0.45 0.25 4.15 1.00 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223B3 Issued Date : 2012.10.03 Revised Date : Page No. : 7/8 Recommended wave soldering condition Product Pb-free devices Peak Temperature 260 +0/-5 °C Soldering Time 5 +1/-1 seconds Recommended temperature profile for IR reflow Profile feature Average ramp-up rate (Tsmax to Tp) Preheat −Temperature Min(TS min) −Temperature Max(TS max) −Time(ts min to ts max) Time maintained above: −Temperature (TL) − Time (tL) Peak Temperature(TP) Time within 5°C of actual peak temperature(tp) Ramp down rate Time 25 °C to peak temperature Sn-Pb eutectic Assembly Pb-free Assembly 3°C/second max. 3°C/second max. 100°C 150°C 60-120 seconds 150°C 200°C 60-180 seconds 183°C 60-150 seconds 240 +0/-5 °C 217°C 60-150 seconds 260 +0/-5 °C 10-30 seconds 20-40 seconds 6°C/second max. 6 minutes max. 6°C/second max. 8 minutes max. Note : All temperatures refer to topside of the package, measured on the package body surface. BTD5974B3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C223B3 Issued Date : 2012.10.03 Revised Date : Page No. : 8/8 TO-92SP Dimension Marking : Device Name Date Code D5974 N4401 □□□□ 3-Lead TO-92SP Plastic Package CYStek Package Code: B3 Style: Pin 1.Emitter 2.Collector 3.Base DIM A A1 b b1 c D Millimeters Min. Max. 1.420 1.620 0.660 0.860 0.420 0.550 0.360 0.480 0.360 0.510 3.900 4.100 Inches Min. Max. 0.056 0.064 0.026 0.034 0.017 0.022 0.014 0.019 0.014 0.020 0.154 0.161 DIM D1 E e e1 L θ Millimeters Min. Max. 2.970 3.270 3.050 3.250 *1.270 2.400 2.640 15.100 15.500 *45° *: Typical Inches Min. Max. 0.117 0.129 0.120 0.128 *0.050 0.096 0.104 0.594 0.610 *45° Notes: 1.Controlling dimension: millimeters. 2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 3.If there is any question with packing specification or packing method, please contact your local CYStek sales office. Material: • Lead: Pure tin plated. • Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0 Important Notice: • All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek. • CYStek reserves the right to make changes to its products without notice. • CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. • CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. BTD5974B3 CYStek Product Specification