IRF IRAM630-1562F Integrated boost pfc power stage and gate driver Datasheet

IRAM630-1562F
Intelligent Power Module for
Energy Efficient Compressor
Applications
15A, 600V IPM
with Integrated PFC
and Open Emitter Pins
Description
International Rectifier's IRAM630-1562F is a 15A, 600V PFC+Inverter Intelligent Power Module (IPM) with
Open Emitter pins specifically designed for energy efficient Air Conditioners application. IR's technology
offers an extremely compact, high performance compressor motor-driver with both PFC and Inverter
stage in a single isolated package to simplify design.
This advanced IPM is a combination of IR's low VCE (on) Trench IGBT technology and the industry
benchmark 3 phase high voltage, high speed driver (3.3V compatible) in a fully isolated thermally
enhanced package. A built-in high precision temperature monitor and over-current protection feature,
along with the short-circuit rated IGBTs and integrated under-voltage lockout function, deliver high level of
protection and fail-safe operation. Using a Single in line package with full transfer mold structure and
CTI>600 minimizes PCB space and resolves isolation problems to heatsink.
Features
 Integrated boost PFC power stage and gate driver
 Integrated gate drivers and bootstrap circuits
 Temperature monitor
 Protection shutdown pin
 Low VCE (on) Trench IGBT technology
 Undervoltage lockout for all channels
 Matched propagation delay for all channels
 3.3V Schmitt-triggered input logic
 Cross-conduction prevention logic
 Motor Power range up to 2kW / 85~253 Vac
 Isolation 2000VRMS min and CTI> 600
 RoHS Compliant
 Recognized by UL (File Number: E252584)
Absolute Maximum Ratings
VCES / VRRM
IGBT/ FW Diode Blocking Voltage
600
VAC
AC Input Voltage
253
V
VRMS
V+
Iin @ TC=25°C
Positive Bus Voltage
PFC RMS Current at FPWM=20kHz
450
V
Iin @ TC=100°C
PFC RMS Current at FPWM=20kHz
10
Ipk_PFC
PFC Maximum Peak Phase Current (Note 1)
30
Fp_PFC
PFC Maximum PWM Carrier Frequency
PFC Maximum Power dissipation per IGBT @ TC =25°C
20
kHz
62
W
Pd_PFC
20
A
Note 1: tP<100ms, VCC=15V, TC=25°C, FPWM=20kHz.
1
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IRAM630-1562F
Internal Electrical Schematic – IRAM630-1562F
V+ (16)
D8
Q1
D1
Q2
D2
Q3
D3
Q4
D4
Q5
D5
Q6
D6
PFC (1)
Q7
D7
V- (19)
VRU (22)
VRV (21)
VRW (20)
R7
R1
VB1 (12)
C1
R2
R3
U, VS1 (13)
VB2 (8)
C2
V, VS2 (9)
VB3 (4)
C3
R4
R5
R6
W, VS3 (5)
VB2 HO2 VS2
HIN1 (23)
VB3 HO3 VS3
VCC
VS1
LO1
HO1
LO2
LO3
VB1
HIN2 (24)
COM
VSS
RCIN
F/EN
PFCOUT
HIN1
LIN3 (28)
ITRIP
PFCIN
VSDC
LIN3
LIN2 (27)
LIN2
GF
LIN1
LIN1 (26)
Driver IC
HIN3
VDC
HIN2
HIN3 (25)
PFC
TRIP
PFCIN (29)
FLT/EN (30)
PFCTRIP (31)
ITRIP (32)
R9
TH (33)
VCC (34)
C4
R8
C5
C7
C6
VSS (35)
2
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IRAM630-1562F
TJ (IGBT & Diode & IC)
Maximum Operating Junction Temperature
TC
Operating Case Temperature Range
-20 to +100
TSTG
Storage Temperature Range
-40 to +125
+150
T
Mounting torque Range (M3 screw)
0.8 to 1.0
Note 1: tP<100ms, VCC=15V, TC=25°C, FPWM=20kHz.
Note 2: Sinusoidal Modulation at V+=400V, VCC=15V, TJ=150°C, MI=0.8, PF=0.6, See Figure 4.
Note 3: tP<100ms, VCC=15V, TC=25°C, FPWM=6kHz.
°C
Nm
Absolute Maximum Ratings (Continued)
Symbol
Parameter
VS1,2,3
High side floating supply offset
voltage
Min
Max
VB1,2,3
VB1,2,3 - 20
VB1,2,3 +0.3
V
High side floating supply voltage
-0.3
600
V
VCC
Low Side and logic fixed supply
voltage
-0.3
20
V
VIN
Input voltage LIN, HIN, PFCIN,
ITrip, FLT/EN
-0.3
VPFCTRIP
PFCTRIP input voltage
3
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-2
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Units Conditions
Lower of
(VSS+15V) or
VCC+0.3V
Lower of
(VSS+15V) or
VCC+0.3V
V
V
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IRAM630-1562F
PFC Section Electrical Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V
ΔV(BR)CES / ΔT
Temperature Coeff. Of Breakdown
Voltage
---
0.3
---
V/°C
VCE(ON)
Collector-to-Emitter Saturation
Voltage
---
1.15
1.4
---
1.25
---
ICES
Zero Gate Voltage Collector
Current
---
10
150
---
100
---
VFM
Diode D8 Forward Voltage Drop
VFM
Diode D7 Forward Voltage Drop
--
1.75
2.2
---
1.25
---
---
1.95
---
Min
Typ
Max
700
Units Conditions
V
μA
V
V
VIN=0V, IC=250µA
VIN=0V, IC=1mA
(25°C - 150°C)
IC=10A, TJ=25°C
IC=10A, TJ=150°C
VIN=0V, V+=600V
VIN=0V, V+=600V, TJ=150°C
IF=10A
IF=10A, TJ=150°C
IF=3.5A
PFC Section Switching Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified.
Symbol
Parameter
EON
Turn-On Switching Loss
---
540
EOFF
Turn-Off Switching Loss
---
220
350
ETOT
Total Switching Loss
---
760
1050
EREC
Diode Reverse Recovery energy
---
15
35
tRR
Diode Reverse Recovery time
---
140
---
EON
Turn-on Switching Loss
---
930
---
EOFF
Turn-off Switching Loss
---
310
---
ETOT
Total Switching Loss
---
1240
---
EREC
Diode Reverse Recovery energy
---
75
---
tRR
Diode Reverse Recovery time
---
180
---
ns
QG
Turn-On IGBT Gate Charge
---
95
140
nC
RBSOA
Reverse Bias Safe Operating Area
SCSOA
4
Short Circuit Safe Operating Area
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Units Conditions
µJ
ns
µJ
FULL SQUARE
2
© 2013 International Rectifier
---
---
µs
IC=10A, V+=400V
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=10A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=48A, V+=400V, VGE=15V
TJ=150°C, IC=40A, VP=600V
V+= 450V,
VGE=+15V to 0V
TJ=150°C, V+= 360V,
VGE=+15V to 0V
See CT3
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IRAM630-1562F
Inverter Section Electrical Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
Units Conditions
V(BR)CES
Collector-to-Emitter Breakdown
Voltage
600
---
---
V
VIN=0V, IC=250µA
ΔV(BR)CES / ΔT
Temperature Coeff. Of Breakdown
Voltage
---
0.3
---
V/°C
VIN=0V, IC=250µA
(25°C - 150°C)
VCE(ON)
Collector-to-Emitter Saturation
Voltage
---
1.5
1.7
---
1.7
---
ICES
Zero Gate Voltage Collector
Current
---
5
80
---
80
---
VFM
Diode Forward Voltage Drop
C1,2,3,4
C6,7
V
μA
IC=5A, TJ=25°C
IC=5A, TJ=150°C
VIN=0V, V+=600V
VIN=0V, V+=600V, TJ=150°C
IF=5A
--
1.8
2.35
---
1.45
---
VCC / VBS Capacitor Value
---
47
---
nF
TJ=25°C
Itrip / PFCtrip Capacitor Value
---
1
---
nF
TJ=25°C
V
IF=5A, TJ=150°C
Inverter Section Switching Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
EON
Turn-On Switching Loss
---
220
350
EOFF
Turn-Off Switching Loss
---
85
140
ETOT
Total Switching Loss
---
305
490
EREC
Diode Reverse Recovery energy
---
15
35
tRR
Diode Reverse Recovery time
---
115
---
EON
Turn-on Switching Loss
---
320
---
EOFF
Turn-off Switching Loss
---
115
---
ETOT
Total Switching Loss
---
435
---
EREC
Diode Reverse Recovery energy
---
50
---
tRR
Diode Reverse Recovery time
---
160
---
ns
QG
Turn-On IGBT Gate Charge
---
19
29
nC
RBSOA
Reverse Bias Safe Operating Area
SCSOA
5
Short Circuit Safe Operating Area
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Units Conditions
µJ
ns
µJ
FULL SQUARE
2
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---
---
µs
IC=5A, V+=400V
VCC=15V, L=1.2mH
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=5A, V+=400V
VCC=15V, L=1.2mH, TJ=150°C
Energy losses include "tail" and
diode reverse recovery
See CT1
IC=8A, V+=400V, VGE=15V
TJ=150°C, IC=5A, VP=600V
V+= 450V,
VCC=+15V to 0V
TJ=150°C, V+= 360V,
VGE=+17.5V to 0V
See CT3
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IRAM630-1562F
Recommended Operating Conditions Driver Function
The Input/Output logic timing diagram is shown in Figure 1. For proper operation the device should be used within the
recommended conditions. All voltages are absolute referenced to COM. The VS offset is tested with all supplies biased at
15V differential (Note 4)
Symbol
Definition
VB1,2,3
High side floating supply voltage
Min
Typ
Max
Units
VS+12.5
VS+15
VS+17.5
VS1,2,3
V
High side floating supply offset voltage
Note 5
---
450
V
VCC
Low side and logic fixed supply voltage
13.5
15
16.5
V
VIN
Logic input voltage LIN, HIN, PFCIN, ITrip, FLT/EN
0
---
5
V
VPFCTRIP
PFCTRIP input voltage
-2
---
0
V
HIN
High side PWM pulse width
1
---
---
µs
Deadtime
External dead time between HIN and LIN
1
---
---
µs
Note 4: For more details, see IRS26302D data sheet
Note 5: Logic operational for Vs from COM-5V to COM+600V. Logic state held for Vs from COM-5V to COM-VBS.
(please refer to DT97-3 for more details)
Static Electrical Characteristics Driver Function
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. The VIN and IIN parameters are referenced to COM and are
applicable to all six channels. (Note 4)
Symbol
Definition
Min
Typ
VIN,th+
Max
Units
Positive going input threshold for LIN, HIN, PFCIN, FLT/EN
2.5
VIN,th-
Negative going input threshold for LIN, HIN, PFCIN, FLT/EN
---
---
---
V
---
0.8
VCCUV+, VBSUV+
VCC/VBS supply undervoltage, Positive going threshold
V
10.2
11.1
12
VCCUV-, VBSUV-
VCC/VBS supply undervoltage, Negative going threshold
V
10
10.9
11.8
V
VCCUVH, VBSUVH
V(ITRIP)
VCC and VBS supply undervoltage lock-out hysteresis
---
0.2
---
V
ITRIP threshold Voltage
0.4
0.5
0.6
V
V(ITRIP, HYS)
ITRIP Input Hysteresis
---
0.05
---
V
V(PFCTRIP)
PFCTRIP threshold Voltage
V
-0.16
-0.2
-0.24
V(PFCTRIP, HYS) PFCTRIP Input Hysteresis
---
0.02
---
V
IQBS
Quiescent VBS supply current
---
---
120
µA
IQCC
Quiescent VCC supply current
---
---
4
mA
ILK
Offset Supply Leakage Current
---
---
50
µA
IIN+
Input bias current VIN=3.3V for LIN, HIN, PFCIN, FLT/EN
350
--
860
µA
IIN-
Input bias current VIN=0V for LIN, HIN, PFCIN, FLT/EN
--
0
1
µA
ITRIP+
ITRIP bias current VT/ITRIP=3.3V
---
1
2
µA
ITRIP-
ITRIP bias current VT/ITRIP=0V
---
0
5
µA
PFCTRIP+
PFC ITRIP bias current VPFC_ITRIP=-250mV
---
20
---
µA
PFCTRIP-
PFC ITRIP bias current VPFC_ITRIP=0V
---
0
5
µA
Ron_FLT
Fault low on resistance
---
50
100
Ω
RBS
Internal bootstrap FET on resistance
---
200
400
Ω
6
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IRAM630-1562F
Dynamic Electrical Characteristics
VBIAS (VCC, VBS1,2,3)=15V, TJ=25ºC, unless otherwise specified. Driver only timing unless otherwise specified.
Symbol
Parameter
Min
Typ
Max
TON
Input to Output propagation turnon delay time (see fig.11)
---
---
1.15
TOFF
Input to Output propagation turnoff delay time (see fig. 11)
---
---
1.15
µs
TFILIN
Input filter time (HIN,LIN,PFC,EN)
200
350
---
ns
VIN=0 or VIN=3.3V
TFILEN
Input filter time (FLT/EN)
100
200
---
ns
VIN=0 or VIN=5V
TEN
EN low to six switch turn-off
propagation delay (see fig. 3)
---
---
1.15
µs
VIN=0 or VIN=3.3V, VEN=0
TFLT
ITRIP to Fault propagation delay
---
800
---
ns
VIN=0 or VIN=3.3V, VITRIP=3.3V
TBLT-ITRIP
ITRIP Blanking Time
---
500
---
ns
VIN=0 or VIN=3.3V, VITRIP=3.3V
---
---
1.5
µs
IC=5A, V+=400V
---
---
1.5
µs
IC=10A, V+=400V
TITRIP
TPFCTRIP
ITRIP to six switch turn-off
propagation delay (see fig. 2)
PFCTRIP to switch turn-off
propagation delay (see fig. 2)
Units Conditions
µs
IC=5A, V+=400V
DT
Internal Dead Time injected by
driver
190
290
420
ns
VIN=0 or VIN=3.3V
MT
Matching Propagation Delay Time
(On & Off) all channels
---
---
50
ns
External dead time> 400ns
TFLT-CLR
Post ITRIP to six switch turn-off
clear time (see fig. 2)
1.17
1.7
2.19
---
1.5
---
7
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ms
TC = 25°C
TC = 100°C
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IRAM630-1562F
Thermal and Mechanical Characteristics
Symbol
Parameter
Min
Typ
Max
Rth(J-C)
Thermal resistance, PFC IGBT
---
1.6
2.0
Rth(J-C)
Thermal resistance, PFC Diode
---
3.0
3.6
Rth(J-C)
Thermal resistance, per IGBT
---
3.8
4.6
Rth(J-C)
Thermal resistance, per Diode
---
5.8
6.9
Rth(C-S)
Thermal resistance, C-S
---
0.1
---
CTI
Comparative Tracking Index
600
---
---
Units Conditions
Inverter Operating Condition
Flat, greased surface. Heatsink
°C/W
compound thermal conductivity
1W/mK
V
Internal NTC - Thermistor Characteristics
Parameter
Definition
Min
Typ
Max
Units Conditions
R25
Resistance
44.65
47
49.35
kΩ
TC = 25°C
R125
Resistance
1.27
1.41
1.56
kΩ
TC = 125°C
B
B-constant (25-50°C)
3989
4050
4111
k
Temperature Range
-40
---
125
°C
Typ. Dissipation constant
---
1
---
R2 = R1e [B(1/T2 - 1/T1)]
mW/°C TC = 25°C
Input-Output Logic Level Table
V+
LIN1,2,3
IC
Driver
(24,25,26)
8
ITRIP
HIN1,2,3
LIN1,2,3
U,V,W
1
0
1
0
V+
1
0
0
1
0
U,V,W
1
0
0
0
Off
(10,6,2)
1
0
1
1
Off
1
1
X
X
Off
0
X
X
X
Off
Ho
HIN1,2,3
(20,22,23)
FLT/EN
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Lo
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IRAM630-1562F
HIN1,2,3
LIN1,2,3
ITRIP
U,V,W
Figure 1. Input/Output Timing Diagram
HIN1,2,3
LIN1,2,3
50%
ITRIP
50%
TFLT
50%
FLT
U,V,W
50%
50%
TITRIP
TFLT-CLR
Figure 2. ITRIP Timing Waveform
EN
50%
TEN
U,V,W
50%
Figure 3. Output Enable Timing Diagram
Note 6: The shaded area indicates that both high-side and low-side switches are off and therefore the
half-bridge output voltage would be determined by the direction of current flow in the load.
9
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IRAM630-1562F
Module Pin-Out Description
10
Pin
Name
1
PFC
PFC
2
na
none
3
na
none
4
VB3
5
W,VS3
6
na
none
7
na
none
8
VB2
9
V,VS2
10
na
none
11
na
none
12
VB1
13
U,VS1
14
na
none
15
na
none
16
+
V
Positive Bus Input Voltage
17
na
none
18
na
none
19
-
V
20
VRW
Low Side Emitter Connection - Phase 3
21
VRV
Low Side Emitter Connection - Phase 2
22
VRU
Low Side Emitter Connection - Phase 1
23
HIN1
Logic Input High Side Gate Driver - Phase 1
24
HIN2
Logic Input High Side Gate Driver - Phase 2
25
HIN3
Logic Input High Side Gate Driver - Phase 3
26
LIN1
Logic Input Low Side Gate Driver - Phase 1
27
LIN2
Logic Input Low Side Gate Driver - Phase 2
28
LIN3
Logic Input Low Side Gate Driver - Phase 3
29
PFCIN
PFC input
30
FLT/EN
Fault Output and Enable Pin
31
PFCTRIP
Current Protection Pin for PFC
32
ITRIP
Current Protection Pin for Inverter
33
VTH
Temperature Feedback
34
VCC
+15V Main Supply
35
VSS
Negative Main Supply
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Description
High Side Floating Supply Voltage 3
Output 3 - High Side Floating Supply Offset Voltage
High Side Floating Supply voltage 2
Output 2 - High Side Floating Supply Offset Voltage
High Side Floating Supply voltage 1
Output 1 - High Side Floating Supply Offset Voltage
Negative Bus Input Voltage
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IRAM630-1562F
Typical Application Connection IRAM630-1562F
Drive IC
1. Electrolytic bus capacitors should be mounted as close to the module bus terminals as possible to
reduce ringing and EMI problems. Additional high frequency ceramic capacitor mounted close to the
module pins will further improve performance.
2. In order to provide good decoupling between VCC-VSS and VB1,2,3-VS1,2,3 terminals, the capacitors
shown connected between these terminals should be located very close to the module pins. Additional
high frequency capacitors, typically 0.1µF, are strongly recommended.
3. Value of the boot-strap capacitors depends upon the switching frequency. Their selection should be
made based on IR design tip DT04-4, application note AN-1044 or Figure 11. Bootstrap capacitor value
must be selected to limit the power dissipation of the internal resistor in series with the VCC. (see
maximum ratings Table on page 3).
4. After approx. 2ms the FAULT is reset. (see Dynamic Characteristics Table on page 5).
5. PWM generator must be disabled within Fault duration to guarantee shutdown of the system,
overcurrent condition must be cleared before resuming operation.
11
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Maxim um Output Phase RMS Current - A
IRAM630-1562F
12
11
10
9
8
7
6
TC = 80ºC
TC = 90ºC
TC = 100ºC
5
4
3
2
1
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 4. Maximum Sinusoidal Phase Current vs. PWM Switching Frequency
+
Sinusoidal Modulation, V =400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
Maxim um Output Phase RMS Current - A
8
7
6
5
4
FPWM = 6kHz
FPWM = 10kHz
FPWM = 16kHz
3
2
1
0
1
10
100
Modulation Frequency - Hz
Figure 5. Maximum Sinusoidal Phase Current vs. Modulation Frequency
+
Sinusoidal Modulation, V =400V, TJ=150°C, TC=100°C, MI=0.8, PF=0.6
12
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IRAM630-1562F
120
Total Pow er Loss- W
100
80
60
40
IOUT = 7.5A
IOUT = 6A
IOUT = 5A
20
0
0
2
4
6
8
10
12
14
16
18
20
PWM Sw itching Frequency - kHz
Figure 6. Total Power Losses vs. PWM Switching Frequency
+
Sinusoidal Modulation, V =400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
120
Total Pow er Loss - W
100
80
60
FPWM = 16kHz
FPWM = 10kHz
FPWM = 6kHz
40
20
0
0
1
2
3
4
5
6
7
8
Output Phase Current - ARMS
Figure 7. Total Power Losses vs. Output Phase Current
+
Sinusoidal Modulation, V =400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
13
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IRAM630-1562F
Max Allow able Case Temperature - ºC
160
140
120
100
FPWM = 6kHz
FPWM = 10kHz
FPWM = 16kHz
80
60
40
0
1
2
3
4
5
6
7
8
Output Phase Current - ARMS
Figure 8. Maximum Allowable Case Temperature vs. Output RMS Current per Phase
+
Sinusoidal Modulation, V =400V, TJ=150°C, MI=0.8, PF=0.6, fmod=50Hz
160
IGBT Junction Temperature - °C
TJ avg = 1.28 x TTherm + 7.57
150
140
130
120
110
100
90
65
70
75
80
85
90
95
100
105
110
115
Internal Therm istor Tem perature Equivalent Read Out - °C
Figure 9. Estimated Maximum IGBT Junction Temperature vs. Thermistor Temperature
Sinusoidal Modulation, V+=400V, Iphase=5Arms, fsw=16kHz, fmod=50Hz, MI=0.8, PF=0.6
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IRAM630-1562F
5.0
Thermistor Pin Read-Out Voltage - V
+5V
4.5
REXT
VTherm
4.0
3.5
3.0
2.5
2.0
1.5
TTHERM
°C
RTHERM
kΩ
TTHERM
°C
RTHERM
kΩ
TTHERM
°C
RTHERM
kΩ
-40
1747
25
47.00
90
3.972
-35
1245
30
37.64
95
3.388
-30
898.5
35
30.33
100
2.902
-25
655.8
40
24.59
105
2.494
-20
484.0
45
20.05
110
2.150
-15
360.9
50
16.43
115
1.860
-10
271.7
55
13.54
120
1.615
-5
206.5
60
11.21
125
1.406
0
158.2
65
9.328
130
1.228
5
122.3
70
7.798
135
1.076
10
95.23
75
6.544
140
0.9447
15
74.73
80
5.518
145
0.8321
20
59.07
85
4.674
150
0.7349
1.0
-40 -30 -20 -10
0
10
RTherm
Max
Avg.
Min
20 30 40 50 60 70 80
Therm istor Tem perature - °C
90 100 110 120 130
Figure 10. Thermistor Readout vs. Temperature (4.7kohm pull-up resistor, 5V) and
Normal Thermistor Resistance values vs. Temperature Table.
Recommended Bootstrap Capacitor - μF
11.0
10μF
10.0
9.0
8.0
6.8μF
7.0
6.0
4.7μF
5.0
4.0
3.3μF
3.0
2.2μF
1.5μF
2.0
1.0
0.0
0
5
10
15
20
PWM Frequency - kHz
Figure 11. Recommended Bootstrap Capacitor Value vs. Switching Frequency
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IRAM630-1562F
Figure 12. Switching Parameter Definitions
VCE
IC
IC
VCE
HIN /LIN
50%
HIN /LIN
90 % IC
50%
VCE
90 % IC
50%
HIN /LIN
HIN /LIN
50%
VCE
10 % IC
10 % IC
tr
tf
TON
TOFF
Figure 12a. Input to Output propagation turnon delay time.
IF
Figure 12b. Input to Output propagation turnoff delay time.
VCE
HIN /LIN
Irr
trr
Figure 12c. Diode Reverse Recovery.
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IRAM630-1562F
V+
IN
Ho
Hin1,2,3
IC
Driver
U,V,W
Lo
Lin1,2,3
IO
Figure CT1. Switching Loss Circuit
V+
Lin1,2,3
IN
Ho
Hin1,2,3
IC
Driver
U,V,W
Lo
IO
Io
Figure CT2. S.C.SOA Circuit
V+
IC
Driver
Lin1,2,3
IN
Ho
Hin1,2,3
U,V,W
Lo
IO
Io
Figure CT3. R.B.SOA Circuit
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IRAM630-1562F
Package Outline IRAM630-1562F2
missing pin : 2,3,6,7,10,11,14,15,17,18
note3
note5
note4
①
P 9DF00
IRA M630-1562F2
note2
1
35
③
note1: Unit Tolerance is + 0.5mm,
Unless Otherwise Specified.
note2: Mirror Surface Mark indicates Pin1 Identification.
note3: Part Number Marking.
Characters Font in this drawing differs from
Font shown on Module.
note4: Lot Code Marking.
Characters Font in this drawing differs from
Font shown on Module.
②
note5: "P" Character denotes Lead Free.
Characters Font in this drawing differs from
Font shown on Module.
Dimensions in mm
For mounting instruction see AN-1049
Data and Specifications are subject to change without notice
IR WORLD HEADQUARTERS: 101 N Sepulveda Blvd, El Segundo, California 90245, USA Tel: (310)
252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information
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IRAM630-1562F
2013-10-23
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