DMN3016LDN 30V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Device V(BR)DSS RDS(ON) max ID MAX TA = +25°C Low On-Resistance Low Input Capacitance 30V 20mΩ @ VGS = 10V 24mΩ @ VGS = 4.5V 7.3A 6.7A Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description This MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it Mechanical Data Case: V-DFN3030-8 ideal for high efficiency power management applications. Case Material: Molded Plastic, “Green” Molding Compound. Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Weight: 0.02 grams (Approximate) UL Flammability Classification Rating 94V-0 DC Motor Control DC-AC Inverters D1 V-DFN3030-8 Pin 1 G1 8 1 D1 S1 7 2 D1 D2 6 3 S2 D2 5 4 G2 D2 G1 G2 S1 Top View Pin out Configuration (Bottom View) Bottom View S2 Q1 N-Channel MOSFET Q2 N-Channel MOSFET Equivalent Circuit Ordering Information (Note 4) Part Number DMN3016LDN-7 DMN3016LDN-13 Notes: Case V-DFN3030-8 V-DFN3030-8 Packaging 3000/Tape & Reel 10000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html. Marking Information YYWW INFORMATION ADVANCED NEW PRODUCT N-Channel Features N16 = Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 13 for 2013) WW = Week Code (01 ~ 53) N16 DMN3016LDN Document number: DS37307 Rev. 2 - 2 1 of 7 www.diodes.com January 2015 © Diodes Incorporated DMN3016LDN Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage INFORMATION ADVANCED NEW PRODUCT Continuous Drain Current (Note 6) VGS = 10V Steady State t<10s TA = +25°C TA = +70°C TA = +25°C TA = +70°C Value 30 ±20 7.3 5.8 ID A 9.2 7.3 2.5 45 22 24 ID Maximum Continuous Body Diode Forward Current (Note 6) Pulsed Drain Current (10µs Pulse, Duty Cycle = 1%) Avalanche Current (Note 7) L = 0.1mH Avalanche Energy (Note 7) L = 0.1mH Units V V IS IDM IAS EAS A A A A mJ Thermal Characteristics Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) TA = +25°C Steady State t<10s TA = +25°C Steady State t<10s Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Electrical Characteristics Symbol PD Value 1.1 119 75 1.6 78 49 13.5 -55 to +150 RθJA PD RθJA RθJC TJ, TSTG Units W °C/W W °C/W °C (@TA = +25°C, unless otherwise specified.) Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS 30 - - 1 ±100 V μA nA VGS = 0V, ID = 250μA VDS = 30V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS(ON) VSD 0.70 2.0 20 24 1.0 V Static Drain-Source On-Resistance 1.4 - VDS = VGS, ID = 250μA VGS = 10V, ID = 11A VGS = 4.5V, ID = 9A VGS = 0V, IS = 1A Ciss Coss Crss Rg Qg Qg Qgs Qgd tD(ON) tR tD(OFF) tF tRR Qrr - 1415 119 82 2.6 11.3 25.1 3.5 3.6 4.8 16.5 26.1 5.6 12.3 10.4 - Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = 4.5V) Total Gate Charge (VGS = 10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Reverse Recovery Time Reverse Recovery Charge Notes: mΩ V Test Condition pF VDS = 15V, VGS = 0V, f = 1.0MHz Ω VDS = 0V, VGS = 0V, f = 1.0MHz nC VDS = 15V, ID = 12A ns VDD = 15V, VGS = 10V, RL = 1.25Ω, RG = 3Ω ns nC IF = 12A, di/dt = 500A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1in. square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. DMN3016LDN Document number: DS37307 Rev. 2 - 2 2 of 7 www.diodes.com January 2015 © Diodes Incorporated DMN3016LDN 30.0 30 VGS = 3.5V VGS = 3.0V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 25 VGS = 4.0V 20.0 VGS = 4.5V 15.0 VGS = 10.0V 10.0 5.0 0.5 1 1.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure1 Typical Output Characteristic 15 TA = 150oC 10 TA = 125oC TA = 25oC TA = 85oC TA = -55oC VGS = 2.2V 0 20 5 VGS = 2.5V 0.0 0 0 2 0.5 1 1.5 2 2.5 3 3.5 VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristic 4 0.03 0.03 VGS = 4.5V RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (Ω) 0.025 0.02 VGS = 4.5V 0.01 VGS = 10V TA = 150oC TA = 125oC 0.02 0.015 TA = 85oC 0.01 TA = 25oC TA = -55oC 0.005 0 0 0 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 4 Typical On-Resistance vs Drain Current and Temperature 0 5 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs Drain Current and Gate Voltage 1.8 0.024 1.6 0.02 RDS(ON), DRAIN-SOURCE ON-ESISTANCE (NORMALIZED) RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) INFORMATION ADVANCED NEW PRODUCT 25.0 VDS= 5.0V 1.4 VGS = 4.5V, ID =5A 1.2 VGS = 10V, ID =10A 1 0.8 0.016 5 VGS = 4.5V, ID =5A 0.012 0.008 VGS = 10V, ID =10A 0.004 0 0.6 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (℃) Figure 5 On-Resistance Variation with Temperature DMN3016LDN Document number: DS37307 Rev. 2 - 2 150 3 of 7 www.diodes.com -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 6 On-Resistance Variation with Temperature January 2015 © Diodes Incorporated 30 2.5 25 IS, SOURCE CURRENT (A) VGS(TH), GATE THESHOLD VOLTAGE (V) 3 2 ID = 1mA 1.5 1 ID = 250µA 0.5 20 15 0 -50 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (℃) Figure 7 Gate Theshold Variation vs Junction Temperature 0 10000 0.2 0.4 0.6 0.8 1 1.2 VSD, SOURCE-DRAIN VOLTAGE (V) Figure 8 Diode Forward Voltage vs Current 10 f=1MHz 9 8 7 1000 Ciss VGS (V) CT, JUNCTION CAPACITANCE (pF) VGS = 0V, TA = 25oC 10 5 0 Coss VDS = 15V, ID =12A 6 5 4 100 3 Crss 2 1 10 0 0 2 4 6 8 10 12 14 16 18 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Typical Junction Capacitance 20 0 5 10 15 20 25 Qg (nC) Figure 10 Gate Charge 100 RDS(ON) Limited 10 ID, DRAIN CURRENT (A) INFORMATION ADVANCED NEW PRODUCT DMN3016LDN DC PW =10s 1 PW =1s PW =100ms 0.1 TJ(Max)=150℃ PW =10ms TA=25℃ VGS=10V PW =1ms Single Pulse DUT on 1*MRP Board PW =100µs 0.01 0.1 1 10 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 SOA, Safe Operation Area DMN3016LDN Document number: DS37307 Rev. 2 - 2 100 4 of 7 www.diodes.com January 2015 © Diodes Incorporated DMN3016LDN r(t), TRANSIENT THERMAL RESISTANCE INFORMATION ADVANCED NEW PRODUCT 1 D=0.9 D=0.7 D=0.5 0.1 D=0.3 D=0.1 D=0.05 D=0.02 0.01 D=0.01 RθJA(t)=r(t) * RθJA RθJA=117℃/W Duty Cycle, D=t1/t2 D=0.005 D=Single Pulse 0.001 0.00001 0.0001 DMN3016LDN Document number: DS37307 Rev. 2 - 2 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) Figure 12 Transient Thermal Resistance 5 of 7 www.diodes.com 10 100 1000 January 2015 © Diodes Incorporated DMN3016LDN Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. A1 A3 INFORMATION ADVANCED NEW PRODUCT A Seating Plane D D/2 PIN1# ID e D2a E2 L k E E2a D2 E/2 b z V-DFN3030-8 (Type J) Dim Min Max Typ A 0.77 0.83 0.80 A1 0.00 0.05 0.02 A3 0.203 BSC b 0.20 0.30 0.25 D 2.95 3.050 3.00 D2 0.90 1.10 1.00 D2a 0.90 1.10 1.00 E 2.95 3.050 3.00 E2 1.72 1.92 1.82 E2a 1.72 1.92 1.82 e 0.65BSC L 0.27 0.38 0.33 La 0.15 0.25 0.20 k 0.35 TYP z 0.40 BSC All Dimensions in mm La Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. Y1 Y4 G1 Y3 Y5 X1 Y2 G X X2 Y X3 Dimensions C G G1 X X1 X2 X3 X4 Y Y1 Y2 Y3 Y4 Y5 Value (in mm) 0.650 0.250 0.550 0.350 1.100 1.100 1.225 2.375 0.530 0.300 1.920 1.920 1.650 3.300 C X4 DMN3016LDN Document number: DS37307 Rev. 2 - 2 6 of 7 www.diodes.com January 2015 © Diodes Incorporated DMN3016LDN IMPORTANT NOTICE INFORMATION ADVANCED NEW PRODUCT DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2015, Diodes Incorporated www.diodes.com DMN3016LDN Document number: DS37307 Rev. 2 - 2 7 of 7 www.diodes.com January 2015 © Diodes Incorporated