Infineon BFP720ESD Robust high performance low noise bipolar rf transistor Datasheet

BFP720ESD
Robust High Performance Low Noise Bipolar RF Transistor
Data Sheet
Revision 1.0, 2010-06-29
RF & Protection Devices
Edition 2010-06-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2010 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
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devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
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be endangered.
BFP720ESD
BFP720ESD, Robust High Performance Low Noise Bipolar RF Transistor
Revision History: 2010-06-29, Revision 1.0
Previous Revision:
Page
Subjects (major changes since last revision)
Trademarks of Infineon Technologies AG
BlueMoon™, COMNEON™, C166™, CROSSAVE™, CanPAK™, CIPOS™, CoolMOS™, CoolSET™,
CORECONTROL™, DAVE™, EasyPIM™, EconoBRIDGE™, EconoDUAL™, EconoPACK™, EconoPIM™,
EiceDRIVER™, EUPEC™, FCOS™, HITFET™, HybridPACK™, ISOFACE™, I²RF™, IsoPACK™, MIPAQ™,
ModSTACK™, my-d™, NovalithIC™, OmniTune™, OptiMOS™, ORIGA™, PROFET™, PRO-SIL™,
PRIMARION™, PrimePACK™, RASIC™, ReverSave™, SatRIC™, SensoNor™, SIEGET™, SINDRION™,
SMARTi™, SmartLEWIS™, TEMPFET™, thinQ!™, TriCore™, TRENCHSTOP™, X-GOLD™, XMM™, X-PMU™,
XPOSYS™.
Other Trademarks
Advance Design System™ (ADS) of Agilent Technologies, AMBA™, ARM™, MULTI-ICE™, PRIMECELL™,
REALVIEW™, THUMB™ of ARM Limited, UK. AUTOSAR™ is licensed by AUTOSAR development partnership.
Bluetooth™ of Bluetooth SIG Inc. CAT-iq™ of DECT Forum. COLOSSUS™, FirstGPS™ of Trimble Navigation
Ltd. EMV™ of EMVCo, LLC (Visa Holdings Inc.). EPCOS™ of Epcos AG. FLEXGO™ of Microsoft Corporation.
FlexRay™ is licensed by FlexRay Consortium. HYPERTERMINAL™ of Hilgraeve Incorporated. IEC™ of
Commission Electrotechnique Internationale. IrDA™ of Infrared Data Association Corporation. ISO™ of
INTERNATIONAL ORGANIZATION FOR STANDARDIZATION. MATLAB™ of MathWorks, Inc. MAXIM™ of
Maxim Integrated Products, Inc. MICROTEC™, NUCLEUS™ of Mentor Graphics Corporation. Mifare™ of NXP.
MIPI™ of MIPI Alliance, Inc. MIPS™ of MIPS Technologies, Inc., USA. muRata™ of MURATA
MANUFACTURING CO., MICROWAVE OFFICE™ (MWO) of Applied Wave Research Inc., OmniVision™ of
OmniVision Technologies, Inc. Openwave™ Openwave Systems Inc. RED HAT™ Red Hat, Inc. RFMD™ RF
Micro Devices, Inc. SIRIUS™ of Sirius Sattelite Radio Inc. SOLARIS™ of Sun Microsystems, Inc. SPANSION™
of Spansion LLC Ltd. Symbian™ of Symbian Software Limited. TAIYO YUDEN™ of Taiyo Yuden Co.
TEAKLITE™ of CEVA, Inc. TEKTRONIX™ of Tektronix Inc. TOKO™ of TOKO KABUSHIKI KAISHA TA. UNIX™
of X/Open Company Limited. VERILOG™, PALLADIUM™ of Cadence Design Systems, Inc. VLYNQ™ of Texas
Instruments Incorporated. VXWORKS™, WIND RIVER™ of WIND RIVER SYSTEMS, INC. ZETEX™ of Diodes
Zetex Limited.
Last Trademarks Update 2010-03-22
Data Sheet
3
Revision 1.0, 2010-06-29
BFP720ESD
Table of Contents
Table of Contents
Table of Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
List of Figures . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
List of Tables . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
2
Product Brief . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
3
Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
4
Thermal Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5
5.1
5.2
5.3
5.4
5.5
Electrical Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
DC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
General AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Frequency Dependent AC Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic DC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Characteristic AC Diagrams . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
6
Simulation Data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
7
Package Information SOT343 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Data Sheet
4
12
12
12
13
18
21
Revision 1.0, 2010-06-29
BFP720ESD
List of Figures
List of Figures
Figure 1
Figure 2
Figure 3
Figure 4
Figure 5
Figure 6
Figure 7
Figure 8
Figure 9
Figure 10
Figure 11
Figure 12
Figure 13
Figure 14
Figure 15
Figure 16
Figure 17
Figure 18
Figure 19
Figure 20
Figure 21
Figure 22
Figure 23
Data Sheet
Total Power Dissipation Ptot = f (Ts) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
BFP720ESD Testing Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter . . . . . . . . . . . . . . . . .
DC Current Gain hFE = f (IC), VCE = 3 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V. . . . . . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V . . . . . . . . . . . . . . . . . . . .
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter. . . . . . . . . . . . . . . . . . . . . . . . . . . . .
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters. . . . . . . . . . . . . . . . .
Collector Base Capacitance CCB = f (VCB), f = 1 MHz. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Gain Gma, Gms, IS21I² = f ( f ), VCE = 3 V, IC = 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . . .
Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz . . . . . . . . . . . . . . . . . . .
Input Matching S11 = f ( f ), VCE = 3 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 5 / 15 mA . . . . . . . . .
Output Matching S22 = f ( f ), VCE = 3 V, IC = 5 / 15 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 5 / 15 mA, ZS = Zopt . . . . . . . . . . . . . . . . . . . . . . . . . .
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz . . . . . . . . . . . . . . . . . . . .
Package Outline . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Package Foot Print . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Marking Description (Marking BFP720ESD: T3s) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Tape Dimensions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
5
11
13
18
18
19
19
20
21
21
22
22
23
23
24
24
25
25
26
26
28
28
28
28
Revision 1.0, 2010-06-29
BFP720ESD
List of Tables
List of Tables
Table 1
Table 2
Table 3
Table 4
Table 5
Table 6
Table 7
Table 8
Table 9
Table 10
Table 11
Table 12
Table 13
Table 14
Table 15
Data Sheet
Quick Reference DC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
Quick Reference AC Characteristics at TA = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
Maximum Ratings at TA = 25°C (unless otherwise specified) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
DC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
General AC Characteristics at TA = 25 °C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
AC Characteristics, VCE = 3 V, f = 150 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
AC Characteristics, VCE = 3 V, f = 450 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 900 MHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
AC Characteristics, VCE = 3 V, f = 1.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 1.9 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
AC Characteristics, VCE = 3 V, f = 2.4 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AC Characteristics, VCE = 3 V, f = 3.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
AC Characteristics, VCE = 3 V, f = 5.5 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
AC Characteristics, VCE = 3 V, f = 10 GHz . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
6
Revision 1.0, 2010-06-29
Robust High Performance Low Noise Bipolar RF Transistor
1
•
•
•
•
•
•
•
•
BFP720ESD
Features
Robust high performance low noise amplifier based on
Infineon´s reliable, high volume SiGe:C wafer technology
2 kV ESD robustness (HBM) due to integrated protection circuits
3
High maximum RF input power of 21 dBm
4
0.65 dB minimum noise figure typical at 2.4 GHz,
0.9 dB at 5.5 GHz, 5 mA
26 dB maximum gain (Gma, Gms) typical at 2.4 GHz,
19.5 dB at 5.5 GHz, 15 mA
22 dBm OIP3 typical at 5.5 GHz, 15 mA
Accurate SPICE GP model available to enable effective
design in process (see chapter 6)
Easy to use, Pb- and halogen free (RoHS compliant) standard package with visible leads
2
1
Applications
As Low Noise Amplifier (LNA) in
•
•
•
•
•
Mobile, portable and fixed connectivity applications: WLAN 802.11a/b/g/n, WiMax 2.5/3.5/5 GHz, UWB,
Bluetooth
Satellite communication systems: Navigation (GPS, Glonass), satellite radio (SDARs, DAB) and LNB
3G/4G UMTS/LTE mobile phone applications
Multimedia applications such as mobile/portable TV, CATV, FM Radio
ISM applications like RKE, AMR and Zigbee, as well as for emerging wireless applications
As discrete active mixer, amplifier in VCO's and buffer amplifier.
Attention: ESD (Electrostatic discharge) sensitive device, observe handling precautions
Product Name Package
BFP720ESD
Data Sheet
SOT343
Pin Configuration
1=B
2=E
3=C
7
Marking
4=E
T3s
Revision 1.0, 2010-06-29
BFP720ESD
Product Brief
2
Product Brief
The BFP720ESD is a Silicon Germanium Carbon (SiGe:C) NPN Heterojunction wideband Bipolar RF Transistor
(HBT) in a plastic dual emitter standard package with visible leads. The device is fitted with internal protection
circuits, which enhance robustness against ESD and high RF input power strongly. The device combines
robustness with very high RF gain and lowest noise figure at low operation current for use in a wide range of
wireless applications.
The BFP720ESD is especially well-suited for portable battery-powered applications in which reduced power
consumption is a key requirement. Device design supports collector voltages up to 4.2 V.
Table 1
Quick Reference DC Characteristics at TA = 25°C
Parameter
Collector emitter breakdown voltage
Symbol
V(BR)CEO
Values
Min.
Typ.
Max.
4.2
4.7
–
Unit
Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
Collector base leakage current
ICBO
–
–
400
nA
VCB = 2 V, IE = 0
Open emitter
DC current gain
hFE
160
250
400
Collector current
IC
–
–
30
mA
Total power dissipation
Ptot
–
–
100
mW
Data Sheet
8
VCE = 3 V, IC = 15 mA
TS ≤ 108 °C
Revision 1.0, 2010-06-29
BFP720ESD
Product Brief
Table 2
Quick Reference AC Characteristics at TA = 25°C
Parameter
Transition frequency
Symbol
fT
Values
Min.
Typ.
Max.
–
43
–
Unit
Note / Test Condition
GHz
VCE = 3 V, IC = 15mA
f = 1 GHz
VCE = 3 V, f = 2.4 GHz
Maximum power gain
dB
Low noise operation point
Gms
–
22.5
–
IC = 5 mA
High linearity operation point
Gms
–
26
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
20
–
IC = 5 mA
High linearity operation point
S21
–
23
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.65
–
IC = 5 mA
Associated gain
Gass
–
21.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
7.5
–
IC = 15 mA
3rd order intercept point
OIP3
–
22.5
–
IC = 15 mA
VCE = 3 V, f = 5.5 GHz
Maximum power gain
dB
Low noise operation point
Gms
–
20
–
IC = 5 mA
High linearity operation point
Gma
–
19.5
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
14.5
–
IC = 5 mA
High linearity operation point
S21
–
16
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.9
–
IC = 5 mA
Associated gain
Gass
–
14.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
8
–
IC = 15 mA
3rd order intercept point
OIP3
–
22
–
IC = 15 mA
Data Sheet
9
Revision 1.0, 2010-06-29
BFP720ESD
Maximum Ratings
3
Maximum Ratings
Table 3
Maximum Ratings at TA = 25°C (unless otherwise specified)
Parameter
Symbol
Values
Min.
Collector emitter voltage
Collector base voltage1)
Collector emitter voltage
3)
Collector current
RF input power
ESD stress pulse
4)
Note / Test Condition
Max.
VCEO
Open base
–
4.2
V
TA = 25°C
–
3.7
V
TA = -55 °C
VCBO
2)
Base current
Unit
Open emitter
–
4.9
V
TA = 25°C
–
4.4
V
TA = -55 °C
VCES
Emitter / base shortened
–
4.2
V
TA = 25°C
–
3.7
V
TA = -55 °C
IB
-10
3
mA
–
IC
–
30
mA
–
PRFin
–
21
dBm
–
VESD
-2
2
kV
HBM, all pins, acc. to
JESD22-A114
5)
Ptot
–
100
mW
TS ≤ 108 °C
Junction temperature
TJ
–
150
°C
–
Storage temperature
TStg
-55
150
°C
–
Total power dissipation
1) Low VCBO due to integrated protection circuits.
2) VCES is identical to VCEO due to integrated protection circuits.
3) Sustainable reverse bias current is high due to integrated protection circuits.
4) ESD robustness is high due to integrated protection circuits.
5) TS is the soldering point temperature. TS measured on the emitter lead at the soldering point of the pcb.
Attention: Stresses above the max. values listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect device
reliability. Maximum ratings are absolute ratings; exceeding only one of these values may
cause irreversible damage to the integrated circuit.
Data Sheet
10
Revision 1.0, 2010-06-29
BFP720ESD
Thermal Characteristics
4
Thermal Characteristics
Table 4
Thermal Resistance
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
1)
Junction - soldering point
RthJS
–
415
–
K/W
1)For calculation of RthJA please refer to Application Note Thermal Resistance AN 077
–
120
100
Ptot [mW]
80
60
40
20
0
Figure 1
Data Sheet
0
25
50
75
TS [°C]
100
125
150
Total Power Dissipation Ptot = f (Ts)
11
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
5
Electrical Characteristics
5.1
DC Characteristics
Table 5
DC Characteristics at TA = 25 °C
Parameter
Symbol
Collector emitter breakdown voltage
V(BR)CEO
Values
Min.
Typ.
Max.
4.2
4.7
–
Unit
Note / Test Condition
V
IC = 1 mA, IB = 0
Open base
Collector emitter leakage current
ICES
–
–
400
nA
VCE = 2 V, VBE = 0
Emitter/base shortened
Collector base leakage current
ICBO
–
–
400
nA
VCB = 2 V, IE = 0
Open emitter
Emitter base leakage current
IEBO
–
–
10
μA
VEB = 0.5 V, IC = 0
Open collector
DC current gain
hFE
160
250
VCE = 3 V, IC = 15 mA
400
Pulse measured
5.2
General AC Characteristics
Table 6
General AC Characteristics at TA = 25 °C
Parameter
Transition frequency
Symbol
fT
Values
Min.
Typ.
Max.
–
43
–
Unit
Note / Test Condition
GHz
VCE = 3 V, IC = 15 mA
f = 1 GHz
Collector base capacitance
CCB
–
0.05
–
pF
VCB = 3 V, VBE = 0
f = 1 MHz
Emitter grounded
Collector emitter capacitance
CCE
–
0.4
–
pF
VCE = 3 V, VBE = 0
f = 1 MHz
Base grounded
Emitter base capacitance
CEB
–
0.45
–
pF
VEB = 0.4 V, VCB = 0
f = 1 MHz
Collector grounded
Data Sheet
12
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
5.3
Frequency Dependent AC Characteristics
Measurement setup is a test fixture with Bias T’s in a 50 Ω system, TA = 25 °C
VC
Top View
Bias -T
OUT
E
C
B
E
VB
Bias-T
(Pin 1)
IN
Figure 2
BFP720ESD Testing Circuit
Table 7
AC Characteristics, VCE = 3 V, f = 150 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
Low noise operation point
Gms
–
34.5
–
IC = 5 mA
High linearity operation point
Gms
–
38.5
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
23.5
–
IC = 5 mA
High linearity operation point
S21
–
30.5
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.55
–
IC = 5 mA
Associated gain
Gass
–
30.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
6.5
–
IC = 15 mA
3rd order intercept point
OIP3
–
21.5
–
IC = 15 mA
Data Sheet
13
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
Table 8
AC Characteristics, VCE = 3 V, f = 450 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
Low noise operation point
Gms
–
30
–
IC = 5 mA
High linearity operation point
Gms
–
33.5
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
23
–
IC = 5 mA
High linearity operation point
S21
–
30
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.55
–
IC = 5 mA
Associated gain
Gass
–
29
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
6.5
–
IC = 15 mA
3rd order intercept point
OIP3
–
21.5
–
IC = 15 mA
Table 9
AC Characteristics, VCE = 3 V, f = 900 MHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
Low noise operation point
Gms
–
26.5
–
IC = 5 mA
High linearity operation point
Gms
–
30.5
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
22.5
–
IC = 5 mA
High linearity operation point
S21
–
28
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.6
–
IC = 5 mA
Associated gain
Gass
–
27
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
6
–
IC = 15 mA
3rd order intercept point
OIP3
–
21.5
–
IC = 15 mA
Data Sheet
14
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
Table 10
AC Characteristics, VCE = 3 V, f = 1.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
Low noise operation point
Gms
–
24.5
–
IC = 5 mA
High linearity operation point
Gms
–
28
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
21.5
–
IC = 5 mA
High linearity operation point
S21
–
26
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.6
–
IC = 5 mA
Associated gain
Gass
–
24.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
6
–
IC = 15 mA
3rd order intercept point
OIP3
–
21.5
–
IC = 15 mA
Table 11
AC Characteristics, VCE = 3 V, f = 1.9 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
Low noise operation point
Gms
–
23.5
–
IC = 5 mA
High linearity operation point
Gms
–
27
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
21
–
IC = 5 mA
High linearity operation point
S21
–
24.5
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.6
–
IC = 5 mA
Associated gain
Gass
–
23.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
6.5
–
IC = 15 mA
3rd order intercept point
OIP3
–
22
–
IC = 15 mA
Data Sheet
15
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
Table 12
AC Characteristics, VCE = 3 V, f = 2.4 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
Low noise operation point
Gms
–
22.5
–
IC = 5 mA
High linearity operation point
Gms
–
26
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
20
–
IC = 5 mA
High linearity operation point
S21
–
23
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.65
–
IC = 5 mA
Associated gain
Gass
–
21.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
7.5
–
IC = 15 mA
3rd order intercept point
OIP3
–
22.5
–
IC = 15 mA
Table 13
AC Characteristics, VCE = 3 V, f = 3.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
Low noise operation point
Gms
–
21.5
–
IC = 5 mA
High linearity operation point
Gms
–
24
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
18
–
IC = 5 mA
High linearity operation point
S21
–
20
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.75
–
IC = 5 mA
Associated gain
Gass
–
18.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
7.5
–
IC = 15 mA
3rd order intercept point
OIP3
–
22.5
–
IC = 15 mA
Data Sheet
16
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
Table 14
AC Characteristics, VCE = 3 V, f = 5.5 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
Low noise operation point
Gms
–
20
–
IC = 5 mA
High linearity operation point
Gma
–
19.5
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
14.5
–
IC = 5 mA
High linearity operation point
S21
–
16
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
0.9
–
IC = 5 mA
Associated gain
Gass
–
14.5
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
8
–
IC = 15 mA
3rd order intercept point
OIP3
–
22
–
IC = 15 mA
Table 15
AC Characteristics, VCE = 3 V, f = 10 GHz
Parameter
Symbol
Values
Min.
Typ.
Unit
Note / Test Condition
Max.
Maximum power gain
dB
Low noise operation point
Gms
–
15.5
–
IC = 5 mA
High linearity operation point
Gms
–
15.5
–
IC = 15 mA
Transducer gain
dB
ZS = ZL = 50 Ω
Low noise operation point
S21
–
7.5
–
IC = 5 mA
High linearity operation point
S21
–
9.5
–
IC = 15 mA
Minimum noise figure
dB
ZS = Zopt
Minimum noise figure
NFmin
–
1.55
–
IC = 5 mA
Associated gain
Gass
–
11
–
IC = 5 mA
Linearity
dBm
ZS = ZL = 50 Ω
1 dB gain compression point
OP1dB
–
5.5
–
IC = 15 mA
3rd order intercept point
OIP3
–
20
–
IC = 15 mA
Note:
1. Gms = IS21 / S12I for k < 1; Gma = IS21 / S12I(k-(k2-1)1/2) for k > 1
2. In order to get the NFmin values stated in this chapter the test fixture losses have been subtracted from all
measured results.
3. OIP33 value depends on termination of all intermodulation frequency components. Termination used for this
measurement is 50 Ω from 0.2 MHz to 12 GHz.
Data Sheet
17
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
5.4
Characteristic DC Diagrams
35
30
IB=165µA
IB=145µA
IC [mA]
25
IB=125µA
20
IB=105µA
15
IB=65µA
IB=85µA
IB=45µA
10
IB=25µA
5
IB=5µA
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
VCE [V]
Figure 3
Collector Current vs. Collector Emitter Voltage IC = f (VCE), IB = Parameter
hFE
1000
100
0.1
1
10
100
IC [mA]
Figure 4
Data Sheet
DC Current Gain hFE = f (IC), VCE = 3 V
18
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BFP720ESD
Electrical Characteristics
100
10
IC [mA]
1
0.1
0.01
0.001
0.0001
0.00001
0.4
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 5
Collector Current vs. Base Emitter Voltage IC = f (VBE), VCE = 2 V
1
0.1
IB [mA]
0.01
0.001
0.0001
0.00001
0.000001
0.4
0.5
0.6
0.7
0.8
0.9
VBE [V]
Figure 6
Data Sheet
Base Current vs. Base Emitter Forward Voltage IB = f (VBE), VCE = 2 V
19
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
1.E-04
1.E-05
IB [A]
1.E-06
1.E-07
1.E-08
1.E-09
1.E-10
1.E-11
0.3
0.4
0.5
0.6
0.7
0.8
VEB [V]
Figure 7
Data Sheet
Base Current vs. Base Emitter Reverse Voltage IB = f (VEB), VCE = 2 V
20
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
5.5
Characteristic AC Diagrams
50
45
4.00V
3.00V
2.50V
40
35
2.00V
fT [GHz]
30
25
20
15
10
1.00V
5
0
Figure 8
0
5
10
15
IC [mA]
20
25
30
Transition Frequency fT = f (IC), f = 1 GHz, VCE = Parameter
25
20
OIP3 [dBm]
15
10
5
2V, 2.4GHz
3V, 2.4GHz
2V, 5.5GHz
3V, 5.5GHz
0
−5
0
5
10
15
20
25
IC [mA]
Figure 9
Data Sheet
3rd Order Intercept Point OIP3 = f (IC), ZS = ZL= 50 Ω, VCE, f = Parameters
21
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
0.12
0.11
0.1
0.09
0.07
0.06
C
cb
[pF]
0.08
0.05
0.04
0.03
0.02
0.01
0
Figure 10
0
0.5
1
1.5
2
VCB [V]
2.5
3
3.5
4
Collector Base Capacitance CCB = f (VCB), f = 1 MHz
50
45
40
35
Gms
G [dB]
30
25
Gms
Gma
20
2
|S21|
15
10
5
0
Figure 11
Data Sheet
0
1
2
3
4
5
6
f [GHz]
7
8
9
10
Gain Gma, Gms, IS21I² = f ( f ), VCE = 3 V, IC = 15 mA
22
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
43
0.15GHz
40
37
0.45GHz
G [dB]
34
31
0.90GHz
28
1.50GHz
1.90GHz
2.40GHz
25
3.50GHz
22
19
5.50GHz
16
10.00GHz
13
10
Figure 12
0
5
10
15
IC [mA]
20
25
30
Maximum Power Gain Gmax = f (IC), VCE = 3 V, f = Parameter in GHz
43
40
0.15GHz
G [dB]
37
34
0.45GHz
31
0.90GHz
28
1.50GHz
1.90GHz
2.40GHz
3.50GHz
25
22
5.50GHz
19
16
10.00GHz
13
10
0
1
2
3
4
5
VCE [V]
Figure 13
Data Sheet
Maximum Power Gain Gmax = f (VCE), IC = 15 mA, f = Parameter in GHz
23
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
1
1.5
10
0.5
2
10
0.4
9
9
3
8
8
0.3
7
7
0.2
4
6
5
5
6
0.1
10
0.03 to 10 GHz
0.1
0
4
5
0.2 0.3 0.4 0.5
1
1.5
2
3
4 5
3
4
−0.1
−10
−0.2
−5
−4
2
1
3
−0.3
1
−0.4
−3
2
−0.5
−2
−1.5
15 mA
5 mA
−1
Figure 14
Input Matching S11 = f ( f ), VCE = 3 V, IC = 5 / 15 mA
1
1.5
0.5
2
0.4
3
2.4GHz
0.3
1.9GHz
4
0.2
5
0.9GHz
5.5GHz
0.1
0.1
0
0.2 0.3 0.4 0.5
0.45GHz
1
1.5
2
3
4 5
Ic = 5.0mA
−0.1
10
Ic = 15mA
−0.2
−10
−5
−4
−0.3
−3
−0.4
10GHz
−0.5
−2
−1.5
−1
Figure 15
Data Sheet
Source Impedance for Minimum Noise Figure Zopt = f ( f ) , VCE = 3 V, IC = 5 / 15 mA
24
Revision 1.0, 2010-06-29
BFP720ESD
Electrical Characteristics
1
1.5
0.5
2
0.4
3
0.3
10
0.2
9
0.1
0.1
0
4
10
5
9
10
0.03 to 10 GHz
8 0.5 8
0.2 0.3 0.4
1
1.5
2
3
4 5
7
7
6
−0.1
−10
5
6
4
3
5
−0.2
1
2
−5
−4
1
4
−0.3
3
−3
2
−0.4
−0.5
−2
−1.5
15 mA
5 mA
−1
Figure 16
Output Matching S22 = f ( f ), VCE = 3 V, IC = 5 / 15 mA
2
1.8
1.6
NFmin [dB]
1.4
1.2
1
0.8
0.6
0.4
I = 15mA
C
IC = 5.0mA
0.2
0
0
2
4
6
8
10
f [GHz]
Figure 17
Data Sheet
Noise Figure NFmin = f ( f ), VCE = 3 V, IC = 5 / 15 mA, ZS = Zopt
25
Revision 1.0, 2010-06-29
BFP720ESD
NFmin [dB]
Electrical Characteristics
3.4
3.2
3
2.8
2.6
2.4
2.2
2
1.8
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
f = 10GHz
f = 5.5GHz
f = 2.4GHz
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
0
5
10
15
20
25
Ic [mA]
Figure 18
Noise Figure NFmin = f (IC), VCE = 3 V, ZS = Zopt, f = Parameter in GHz
5
4.5
4
f = 10GHz
f = 5.5GHz
f = 2.4GHz
f = 1.9GHz
f = 0.9GHz
f = 0.45GHz
NF50 [dB]
3.5
3
2.5
2
1.5
1
0.5
0
0
5
10
15
20
25
Ic [mA]
Figure 19
Noise Figure NF50 = f (IC), VCE = 3 V, ZS = 50 Ω, f = Parameter in GHz
Note: The curves shown in this chapter have been generated using typical devices but shall not be considered as
a guarantee that all devices have identical characteristic curves. TA = 25 °C
Data Sheet
26
Revision 1.0, 2010-06-29
BFP720ESD
Simulation Data
6
Simulation Data
For the SPICE Gummel Poon (GP) model as well as for the S-parameters (including noise parameters) please
refer to our internet website: www.infineon.com/rf.models. Please consult our website and download the latest
versions before actually starting your design.
You find the BFP720ESD SPICE GP model in the internet in MWO- and ADS-format, which you can import into
these circuit simulation tools very quickly and conveniently. The model already contains the package parasitics
and is ready to use for DC- and high frequency simulations. The terminals of the model circuit correspond to the
pin configuration of the device.
The model parameters have been extracted and verified up to 10 GHz using typical devices. The BFP720ESD
SPICE GP model reflects the typical DC- and RF-performance within the limitations which are given by the SPICE
GP model itself. Besides the DC characteristics all S-parameters in magnitude and phase, as well as noise figure
(including optimum source impedance, equivalent noise resistance and flicker noise) and intermodulation have
been extracted.
Data Sheet
27
Revision 1.0, 2010-06-29
BFP720ESD
Package Information SOT343
7
Package Information SOT343
0.9 ±0.1
2 ±0.2
0.1 MAX.
1.3
0.1
A
1
0.1 MIN.
0.15
1.25 ±0.1
3
2.1 ±0.1
4
2
0.3 +0.1
-0.05
+0.1
0.15 -0.05
0.6 +0.1
-0.05
4x
0.1 M
0.2 M A
SOT343-PO V08
Figure 20
Package Outline
1.6
0.8
0.6
1.15
0.9
SOT343-FP V08
Figure 21
Package Foot Print
XY s
96
Manufacturer
Marking
Pin 1
Figure 22
2009, June
Date Code(YM)
Marking Description (Marking BFP720ESD: T3s)
0.2
2.3
8
4
Pin 1
2.15
1.1
SOT323-TP V02
Figure 23
Data Sheet
Tape Dimensions
28
Revision 1.0, 2010-06-29
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