NEC NP160N04TDG-E2-AY Switching n-channel power mos fet Datasheet

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP160N04TDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP160N04TDG is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP160N04TDG-E1-AY
Note
NP160N04TDG-E2-AY
Note
LEAD PLATING
PACKING
PACKAGE
Pure Sn (Tin)
Tape 800 p/reel
TO-263-7pin (MP-25ZT) typ. 1.5 g
Note Pb-free (This product does not contain Pb in the external electrode).
FEATURES
• Super low on-state resistance
RDS(on)1 = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A)
RDS(on)2 = 2.2 mΩ TYP. / 5.4 mΩ MAX. (VGS = 4.5 V, ID = 80 A)
• High Current Rating
ID(DC) = ±160 A
• Logic level drive type
(TO-263-7pin)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source Voltage (VGS = 0 V)
VDSS
Gate to Source Voltage (VDS = 0 V)
VGSS
±20
V
Drain Current (DC) (TC = 25°C)
ID(DC)
±160
A
Note1
40
V
ID(pulse)
±640
A
Total Power Dissipation (TC = 25°C)
PT1
220
W
Total Power Dissipation (TA = 25°C)
PT2
1.8
W
Channel Temperature
Tch
175
°C
Storage Temperature
Tstg
−55 to +175
°C
EAS
372
mJ
Drain Current (pulse)
Single Avalanche Energy
Note2
Repetitive Avalanche Current
Note3
IAR
61
A
Repetitive Avalanche Energy
Note3
EAR
372
mJ
Notes 1. PW ≤ 10 μs, Duty Cycle ≤ 1%
2. Starting Tch = 25°C, VDD = 20 V, RG = 25 Ω, VGS = 20 → 0 V, L = 100 μH
3. RG = 25 Ω, Tch(peak) ≤ 150°C
THERMAL RESISTANCE
Channel to Case Thermal Resistance
Rth(ch-C)
0.68
°C/W
Channel to Ambient Thermal Resistance
Rth(ch-A)
83.3
°C/W
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D18761EJ2V0DS00 (2nd edition)
Date Published July 2007 NS CP(K)
Printed in Japan
The mark <R> shows major revised points.
The revised points can be easily searched by copying an "<R>" in the PDF file and specifying it in the "Find what:" field.
2007
NP160N04TDG
ELECTRICAL CHARACTERISTICS (TA = 25°C)
CHARACTERISTICS
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Zero Gate Voltage Drain Current
IDSS
VDS = 40 V, VGS = 0 V
1
μA
Gate Leakage Current
IGSS
VGS = ±20 V, VDS = 0 V
±100
nA
VGS(th)
VDS = VGS, ID = 250 μA
1.5
2.0
2.5
V
| yfs |
VDS = 5 V, ID = 40 A
37
94
RDS(on)1
VGS = 10 V, ID = 80 A
1.6
2.0
mΩ
RDS(on)2
VGS = 4.5 V, ID = 80 A
2.2
5.4
mΩ
Gate to Source Threshold Voltage
Forward Transfer Admittance
Note
Drain to Source On-state Resistance
Note
S
<R>
Input Capacitance
Ciss
VDS = 25 V,
10500
15750
pF
<R>
Output Capacitance
Coss
VGS = 0 V,
980
1470
pF
<R>
Reverse Transfer Capacitance
Crss
f = 1 MHz
630
1140
pF
Turn-on Delay Time
td(on)
VDD = 20 V, ID = 80 A,
35
80
ns
Rise Time
tr
VGS = 10 V,
55
140
ns
Turn-off Delay Time
td(off)
RG = 0 Ω
107
220
ns
Fall Time
tf
17
50
ns
270
nC
Total Gate Charge
Note
QG
VDD = 32 V,
180
QGS
VGS = 10 V,
30
nC
QGD
ID = 160 A
57
nC
VF(S-D)
IF = 160 A, VGS = 0 V
0.9
Reverse Recovery Time
trr
IF = 160 A, VGS = 0 V,
49
ns
Reverse Recovery Charge
Qrr
di/dt = 100 A/μs
60
nC
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
Note
1.5
V
Note Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
RG = 25 Ω
D.U.T.
L
50 Ω
PG.
VGS = 20 → 0 V
TEST CIRCUIT 2 SWITCHING TIME
RL
RG
PG.
VDD
VGS
VGS
Wave Form
0
VGS
10%
90%
VDD
VDS
90%
IAS
VDS
ID
VDS
τ
τ = 1 μs
Duty Cycle ≤ 1%
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
IG = 2 mA
PG.
2
50 Ω
0
10%
10%
tr
td(off)
Wave Form
VDD
Starting Tch
90%
VDS
VGS
0
BVDSS
RL
VDD
Data Sheet D18761EJ2V0DS
td(on)
ton
tf
toff
NP160N04TDG
TYPICAL CHARACTERISTICS (TA = 25°C)
DERATING FACTOR OF FORWARD BIAS
SAFE OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
250
PT - Total Power Dissipation - W
dT - Percentage of Rated Power - %
120
100
80
60
40
20
200
150
100
50
0
0
0
25
50
75
100
125
150
0
175
25
50
75
100
125
150
175
TC - Case Temperature - °C
TC - Case Temperature - °C
FORWARD BIAS SAFE OPERATING AREA
10000
ID(pulse)
i
i
m
s
d
it e
Lim
1
wn
0.1
1i 0
o
ed
ak
0.1
0.01
Br
d
it e
im
nL
TC = 25°C
Single Pulse
μs
s
t io
ip a
i ss
1
00
i
ID(DC) DC
D
er
10
=1
1i m
100
PW
y
ar
nd
co
Se
d
it e
Lim V )
n)
(o
i0
S
1
R D GS =
(V
w
Po
10
100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
100
rth(t) - Transient Thermal Resistance - °C/W
ID - Drain Current - A
1000
Rth(ch-A) = 83.3°C/Wi
10
1
Rth(ch-C) = 0.68°C/Wi
0.1
Single Pulse
0.01
100 μ
1m
10 m
100 m
1
PW - Pulse Width - s
Data Sheet D18761EJ2V0DS
10
100
1000
3
NP160N04TDG
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
FORWARD TRANSFER CHARACTERISTICS
1000
700
VGS = 10 V
ID - Drain Current - A
ID - Drain Current - A
600
500
400
4.5 V
300
200
TA = −55°C
25°C
75°C
150°C
175°C
1
0.01
0
0.5
1
1.5
2
1
2.5
2
3
4
5
6
VGS - Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE vs.
CHANNEL TEMPERATURE
FORWARD TRANSFER ADMITTANCE vs.
DRAIN CURRENT
2.5
2
1.5
1
0.5
VDS = VGS
ID = 250 μA
0
-75
-25
25
75
125
175
| yfs | - Forward Transfer Admittance - S
VDS - Drain to Source Voltage - V
1000
Tch = −55°C
25°C
75°C
100
10
150°C
175°C
VDS = 5 V
Pulsed
1
225
0.1
1
10
100
Tch - Channel Temperature - °C
ID - Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
6
Pulsed
5
4
3
VGS = 4.5 V
2
10 V
1
0
1
10
100
1000
RDS(on) - Drain to Source On-state Resistance - mΩ
VGS(th) - Gate to Source Threshold Voltage - V
10
Pulsed
0
RDS(on) - Drain to Source On-state Resistance - mΩ
100
0.1
100
ID - Drain Current - A
4
VDS = 10 V
Pulsed
12
ID = 80 A
Pulsed
10
8
6
4
2
0
0
5
10
15
VGS - Gate to Source Voltage - V
Data Sheet D18761EJ2V0DS
20
NP160N04TDG
<R>
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
100000
6
ID = 80 A
Pulsed
4
VGS = 4.5 V
3
10 V
2
1
Ciss
10000
Coss
1000
VGS = 0 V
f = 1 MHz
100
0.01
0
-75
-25
25
75
125
175
225
SWITCHING CHARACTERISTICS
1
10
100
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
12
40
VDS - Drain to Source Voltage - V
1000
td(on), tr, td(off), tf - Switching Time - ns
0.1
VDS - Drain to Source Voltage - V
Tch - Channel Temperature - °C
td(off)
100
tr
td(on)
10
tf
VDD = 20 V
VGS = 10 V
RG = 0 Ω
35
VDD = 32 V
20 V
8V
30
9
25
6
20
VGS
15
3
10
VDS
5
1
ID = 160 A
Pulsed
0
0.1
1
10
100
0
1000
50
100
150
ID - Drain Current - A
QG - Gate Charge - nC
SOURCE TO DRAIN DIODE
FORWARD VOLTAGE
REVERSE RECOVERY TIME vs.
DIODE FORWARD CURRENT
1000
0
200
1000
100
VGS = 10 V
0V
10
1
Pulsed
trr - Reverse Recovery Time - ns
IF - Diode Forward Current - A
Crss
100
10
di/dt = 100 A/μs
VGS = 0 V
1
0.1
0
0.5
1
1.5
0.1
1
10
100
1000
IF - Diode Forward Current - A
VF(S-D) - Source to Drain Voltage - V
Data Sheet D18761EJ2V0DS
5
VGS - Gate to Source Voltage - V
5
Ciss, Coss, Crss - Capacitance - pF
RDS(on) - Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
NP160N04TDG
PACKAGE DRAWING (Unit: mm)
TO-263-7pin (MP-25ZT)
EQUIVALENT CIRCUIT
Drain
Body
Diode
Gate
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately
degrade the device operation. Steps must be taken to stop generation of static electricity as much as
possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D18761EJ2V0DS
NP160N04TDG
TAPE INFORMATION
There are two types (-E1, -E2) of taping depending on the direction of the device.
Draw-out side
Reel side
MARKING INFORMATION
NEC
160N04
DG
Pb-free plating marking
Abbreviation of part number
Lot code
RECOMMENDED SOLDERING CONDITIONS
The NP160N04TDG should be soldered and mounted under the following recommended conditions.
For soldering methods and conditions other than those recommended below, please contact an NEC Electronics
sales representative.
For technical information, see the following website.
Semiconductor Device Mount Manual (http://www.necel.com/pkg/en/mount/index.html)
Soldering Method
Infrared reflow
Soldering Conditions
Recommended
Condition Symbol
Maximum temperature (Package's surface temperature): 260°C or below
Time at maximum temperature: 10 seconds or less
Time of temperature higher than 220°C: 60 seconds or less
Preheating time at 160 to 180°C: 60 to 120 seconds
IR60-00-3
Maximum number of reflow processes: 3 times
Maximum chlorine content of rosin flux (percentage mass): 0.2% or less
Partial heating
Maximum temperature (Pin temperature): 350°C or below
Time (per side of the device): 3 seconds or less
P350
Maximum chlorine content of rosin flux: 0.2% (wt.) or less
Caution Do not use different soldering methods together (except for partial heating).
Data Sheet D18761EJ2V0DS
7
NP160N04TDG
• The information in this document is current as of July, 2007. The information is subject to change
without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or
data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all
products and/or types are available in every country. Please check with an NEC Electronics sales
representative for availability and additional information.
• No part of this document may be copied or reproduced in any form or by any means without the prior
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M8E 02. 11-1
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