DGTD65T15H2TF Green 650V FIELD STOP IGBT IN ITO220AB Description Features The DGTD65T15H2TF is produced using advanced Field Stop Trench IGBT Technology, which provides high performance, excellent quality and high ruggedness. High Ruggedness for Motor Control VCE(sat) Positive Temperature Coefficient Very Soft, Fast Recovery Anti-Parallel Diode Low EMI Maximum Junction Temperature +175°C Lead-Free Finish & RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Applications Mechanical Data Motor Controls Case: ITO220AB (Type MC) Case Material: Molded Plastic. “Green” Molding Compound. UL Flammability Classification Rating 94V-0 Terminals: Finish – Matte Tin Plated Leads. Solderable per MIL-STD-202, Method 208 Weight: 1.9 grams (Approximate) Collector Gate G C Emitter E ITO220AB (Type MC) Device Symbol Ordering Information (Note 4) Product DGTD65T15H2TF Notes: Marking DGTD65T15H2 Quantity 1000 per Box in Tubes 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/. Marking Information Typical Configuration = Manufacturer’s Marking DGTD65T15H2 = Product Type Marking Code YY = Year (ex: 17 = 2017) WW = Week (01 to 53) DGTD 65T15H2 YY WW DGTD65T15H2TF Document Number DS39649 Rev. 2 - 2 1 of 9 www.diodes.com December 2017 © Diodes Incorporated DGTD65T15H2TF Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.) Characteristic Symbol VCE Collector-Emitter Voltage DC Collector Current, Limited by Tvjmax TC = +25°C TC = +100°C Pulsed Collector Current, tp Limited by Tvjmax Diode Forward Current Limited by Tvjmax IFpuls VGE Value 650 30 15 60 30 15 60 ±20 Unit V A A A A A A V tSC 5 µs Value 48 24 Unit IC ICpuls TC = +25°C TC = +100°C Diode Pulsed Current, tp Limited by Tvjmax Gate-Emitter Voltage Short Circuit Withstand Time VCC ≤ 360V, VGE = 15V, Tvj = +150°C IF Thermal Characteristics (@TA = +25°C, unless otherwise specified.) Characteristic Power Dissipation Linear Derating Factor (Note 5) Symbol TC = +25°C TC = +100°C Thermal Resistance, Junction to Ambient (Note 5) PD RθJA 62 Thermal Resistance, Junction to Case for IBGT (Note 5) RθJC 3.0 Thermal Resistance, Junction to Case for Diode (Note 5) RθJC 5.0 Operating Temperature Storage Temperature Range Tvj TSTG -40 to +175 -55 to +150 Note: W °C/W °C 5. When mounted on a standard JEDEC 2-layer FR-4 board. DGTD65T15H2TF Document Number DS39649 Rev. 2 - 2 2 of 9 www.diodes.com December 2017 © Diodes Incorporated DGTD65T15H2TF Electrical Characteristics (@Tvj = +25°C, unless otherwise specified.) Parameter STATIC CHARACTERISTICS Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Diode Forward Voltage Gate-Emitter Threshold Voltage Zero Gate Voltage Collector Current Gate-Emitter Leakage Current DYNAMIC CHARACTERISTICS Total Gate Charge Gate-Emitter Charge Gate-Collector Charge Input Capacitance Reverse Transfer Capacitance Output Capacitance SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Energy Turn-Off Switching Energy Total Switching Energy Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge Reverse Recovery Time Reverse Recovery Current Reverse Recovery Charge DGTD65T15H2TF Document Number DS39649 Rev. 2 - 2 Tvj = Tvj = Tvj = Tvj = +25°C +175°C +25°C +175°C Symbol Min Typ Max Unit BVCES – 1.65 1.90 1.85 1.95 5.5 – 2.00 – 2.30 – 6.5 V IC = 2mA, VGE = 0V V IC = 15A, VGE = 15V V VGE = 0V, IF = 15A VGE(th) 650 – – – – 4.5 V ICES – – 20 µA IGES – – ±100 nA VCE = VGE, IC = 0.5mA VCE = 650V, VGE = 0V, Tvj = +25°C VGE = 20V, VCE = 0V Qg Qge Qgc Cies Cres Coes – – – – – – 61 11 35 1129 57 31 – – – – – – td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets trr Irr Qrr trr Irr Qrr – – – – – – – – – – – – – – – – – – – – 19 27 128 32 270 86 356 17 29 150 130 342 288 630 150 5.2 390 207 6.1 631 – – – – – – – – – – – – – – – – – – – – VCE(sat) VF 3 of 9 www.diodes.com Condition nC VCE = 520V, IC = 15A, VGE = 15V pF VCE = 25V, VGE = 0V, f = 1MHz ns µJ ns µJ ns A nC ns A nC VGE = 15V, VCC = 400V, IC = 15A, RG = 10Ω, Inductive Load, Tvj = +25°C VGE = 15V, VCC = 400V, IC = 15A, RG = 10Ω, Inductive Load, Tvj = +175°C IF = 15A, diF/dt = 200A/µs, Tvj = +25°C IF = 15A, diF/dt = 200A/µs, Tvj = +175°C December 2017 © Diodes Incorporated DGTD65T15H2TF Typical Performance Characteristics (@TA = +25°C, unless otherwise specified.) TJ=175°C TJ=25°C VGE=15V DGTD65T15H2TF Document Number DS39649 Rev. 2 - 2 4 of 9 www.diodes.com December 2017 © Diodes Incorporated DGTD65T15H2TF Typical Performance Characteristics (@TA = +25°C, unless otherwise specified.) (Cont.) VGE=0V f =1MHz Vcc=400V VGE=15V RG=10 TC=25°C — TC=175°C - - tr td(on) Vcc=400V VGE=15V RG=10 TC=25°C — TC=175°C - - Vcc=400V VGE=15V RG=10 TC=25°C — TC=175°C - td(off) tf DGTD65T15H2TF Document Number DS39649 Rev. 2 - 2 5 of 9 www.diodes.com December 2017 © Diodes Incorporated DGTD65T15H2TF Typical Performance Characteristics (@TA = +25°C, unless otherwise specified.) (Cont.) Vcc=400V VGE=15V IC=15A TC=25°C — TC=175°C - - Vcc=400V VGE=15V IC=15A TC=25°C — TC=175°C - - tr td(off) tf td(on) Vcc=400V VGE=15V IC=15A TC=25°C — TC=175°C - - Vcc=400V VGE=15V IC=15A RG=10 tr td(on) td(off) tf DGTD65T15H2TF Document Number DS39649 Rev. 2 - 2 Vcc=400V VGE=15V IC=15A RG=10 Vcc=400V VGE=15V IC=15A RG=10 6 of 9 www.diodes.com December 2017 © Diodes Incorporated DGTD65T15H2TF Typical Performance Characteristics (@TA = +25°C, unless otherwise specified.) (Cont.) DGTD65T15H2TF Document Number DS39649 Rev. 2 - 2 7 of 9 www.diodes.com December 2017 © Diodes Incorporated DGTD65T15H2TF Package Outline Dimensions Please see http://www.diodes.com/package-outlines.html for the latest version. ITO220AB (Type MC) A Ø P E ITO220AB (Type MC) A1 Q D H1 L1 A2 b1 L Dim A A1 A2 b b1 c D H1 E e e1 L Min Max 4.30 4.80 2.50 3.10 2.30 2.90 0.50 1.00 0.95 1.70 0.40 0.80 14.50 16.40 6.20 7.20 9.60 10.40 ----12.20 14.20 Typ ---------2.54 5.08 -- L1 2.90 4.70 -P 3.00 3.40 -Q 2.40 3.50 -All Dimensions in mm b1 c b e e1 Note : For high voltage applications, the appropriate industry sector guidelines should be considered with regards to creepage and clearance distances between device Terminals and PCB tracking. DGTD65T15H2TF Document Number DS39649 Rev. 2 - 2 8 of 9 www.diodes.com December 2017 © Diodes Incorporated DGTD65T15H2TF IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). 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