DMP6050SFG 60V P-CHANNEL ENHANCEMENT MODE MOSFET ® POWERDI Features and Benefits RDS(ON) max ID max TA = +25°C 50m @ VGS = -10V -4.8A 70m @ VGS = -4.5V -4.1A V(BR)DSS -60V Low RDS(ON) – Ensures On State Losses Are Minimized Small Form Factor Thermally Efficient Package Enables Higher Density End Products Occupies Just 33% of The Board Area Occupied by SO-8 Enabling Smaller End Product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. Backlighting Power Management Functions DC-DC Converters Case: POWERDI®3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.072 grams (Approximate) ® POWERDI 3333-8 D Pin 1 S S S G G D D D S D Bottom View Top View Equivalent Circuit Ordering Information (Note 4) Part Number DMP6050SFG-7 DMP6050SFG-13 Notes: Case POWERDI®3333-8 POWERDI®3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http：//www.diodes.com/products/packages.html. Marking Information YYWW ADVANCE INFORMATION NEW PRODUCT Product Summary P55= Product Type Marking Code YYWW = Date Code Marking YY = Last Digit of Year (ex: 14 = 2014) WW = Week Code (01 to 53) P55 POWERDI is a registered trademark of Diodes Incorporated. DMP6050SFG Document number: DS37378 Rev. 1 - 2 1 of 6 www.diodes.com October 2014 © Diodes Incorporated DMP6050SFG Maximum Ratings @TA = +25°C, unless otherwise specified. ADVANCE INFORMATION NEW PRODUCT Characteristic Symbol VDSS VGSS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 6) VGS = -10V TA = +25°C TA = +70°C TA = +25°C TA = +70°C Steady State t<10s Value -60 ±20 -4.8 -3.9 ID A -6.0 -4.8 -32 -2.8 -24.8 30.8 ID Pulsed Drain Current (10s pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) Avalanche Current (Note 7) L = 0.1mH Repetitive Avalanche Energy (Note 7) L = 0.1mH Unit V V IDM IS IAS EAS A A A A mJ Thermal Characteristics @TA = +25°C, unless otherwise specified. Characteristic Symbol PD Total Power Dissipation (Note 5) Steady state t<10s Thermal Resistance, Junction to Ambient (Note 5) Value 1.1 118 78 1.8 71 46 6.7 -55 to +150 RJA Total Power Dissipation (Note 6) PD Steady state t<10s Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range RJA RJC TJ, TSTG Unit W °C/W W °C/W °C Electrical Characteristics @TA = +25°C, unless otherwise specified. Characteristic OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current TJ = +25°C Gate-Source Leakage ON CHARACTERISTICS (Note 8) Gate Threshold Voltage Symbol Min Typ Max Unit BVDSS IDSS IGSS -60 — — — — — — -1 ±100 V µA nA VGS = 0V, ID = -250μA VDS = -60V, VGS = 0V VGS = ±20V, VDS = 0V VGS(TH) RDS (ON) — 36 47 -0.7 -3.0 50 70 -1.2 V Static Drain-Source On-Resistance -1.0 — — — mΩ VDS = VGS, ID = -250μA VGS = -10V, ID = -5A VGS = -4.5V, ID = -4A VGS = 0V, IS = -1A tD(ON) tR tD(OFF) tF tRR — — — — — — — — — — — — — 1293 86.3 64.7 12 11.9 24 3.6 5.7 4.3 6.3 46.7 25.3 13.6 — — — — — — — — — — — — — pF pF pF Ω nC nC nC nC ns ns ns ns ns QRR — 7.4 — nC Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance Total Gate Charge (VGS = -4.5V) Total Gate Charge (VGS = -10V) Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Notes: VSD Ciss Coss Crss Rg Qg Qg Qgs Qgd V Test Condition VDS = -30V, VGS = 0V, f = 1.0MHz VDS = 0V, VGS = 0V, f = 1MHz VDS = -30V, ID = -5A VGS = -10V, VDS = -30V, RG = 3Ω, ID = -5A IF = -5A, di/dt = 100A/μs IF = -5A, di/dt = 100A/μs 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25°C. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated. DMP6050SFG Document number: DS37378 Rev. 1 - 2 2 of 6 www.diodes.com October 2014 © Diodes Incorporated DMP6050SFG 30.0 30 VDS= -5.0V VGS=-5.0V 15.0 VGS=-4.5V VGS=-4.0V 10.0 VGS=-3.5V 5.0 25 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) VGS=-10.0V 20.0 TA=+175℃ 20 TA=+150℃ TA=+125℃ 15 TA=+85℃ 10 TA=+25℃ TA=-55℃ 5 VGS=-3.0V VGS=-2.8V 0 0.0 0.5 1 1.5 2 2.5 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 1 Typical Output Characteristic VGS, GATE-SOURCE VOLTAGE (V) Figure 2 Typical Transfer Characteristic 0.100 0.090 0.080 0.070 0.060 VGS=-4.5V 0.050 0.040 0.030 VGS=-10V 0.020 0.010 0.000 0.3 0.25 ID=-7A 0.2 0.15 0.1 0.05 0 10 15 20 25 30 ID, DRAIN-SOURCE CURRENT (A) Figure 3 Typical On-Resistance vs. Drain Current and Gate Voltage 0.12 VGS=-4.5V TA=+150℃ TA=+175℃ 0.1 0.08 0.06 0.04 TA=+125℃ TA=+85℃ 0.02 TA=-55℃ TA=+25℃ 0 0 5 10 15 20 25 ID=-5A 0 5 2 4 6 8 10 12 14 16 18 20 VGS, GATE-SOURCE VOLTAGE (V) Figure 4 Typical Transfer Characteristic RDS(ON), DRAIN-SOURCE ON-RESISTANCE (NORMALIZED) 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 3 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0 RDS(ON), DRAIN-SOURCE ON-RESISTANCE () ADVANCE INFORMATION NEW PRODUCT 25.0 2.4 2.2 2 VGS=-10V, ID=-10A 1.8 1.6 1.4 1.2 1 VGS=-4.5V, ID=-5A 0.8 0.6 0.4 30 ID, DRAIN CURRENT (A) Figure 5 Typical On-Resistance vs. Drain Current and Temperature -50 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 6 On-Resistance Variation with Temperature POWERDI is a registered trademark of Diodes Incorporated. DMP6050SFG Document number: DS37378 Rev. 1 - 2 3 of 6 www.diodes.com October 2014 © Diodes Incorporated 0.09 0.08 0.07 VGS=-4.5V, ID=-5A 0.06 0.05 0.04 VGS=-10V, ID=-10A 0.03 3 VGS(TH), GATE THRESHOLD VOLTAGE (V) RDS(ON), DRAIN-SOURCE ON-ESISTANCE () 0.1 0.02 0.01 0 -50 2.5 ID=-1mA 2 ID=-250A 1.5 1 0.5 0 -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) -50 Figure 7 On-Resistance Variation with Temperature 25 CT, JUNCTION CAPACITANCE (pF) VGS=0V, TA=+175℃ IS, SOURCE CURRENT (A) -25 0 25 50 75 100 125 150 175 TJ, JUNCTION TEMPERATURE (℃) Figure 8 Gate Threshold Variation vs Ambient Temperature 10000 30 VGS=0V, TA=+150℃ 20 VGS=0V, TA=+125℃ 15 VGS=0V, TA=+85℃ 10 VGS=0V, TA=+25℃ 5 VGS=0V, TA=-55℃ 0 f=1MHz Ciss 1000 Coss 100 Crss 10 0 0.3 0.6 0.9 1.2 1.5 0 5 VSD, SOURCE-DRAIN VOLTAGE (V) 10 15 20 25 30 35 40 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 9 Diode Forward Voltage vs. Current Figure 10 Typical Junction Capacitance 100 10 RDS(ON) Limited 8 ID, DRAIN CURRENT (A) VGS, GATE-SOURCE VOLTAGE (V) ADVANCE INFORMATION NEW PRODUCT DMP6050SFG 6 VDS=-30V, ID=-5A 4 1 0.1 0.01 0 5 10 15 20 PW=100s PW=10ms 10 2 0 PW=1ms 25 TJ,(Max)=+150℃ DC TA=+25℃ PW=10s Single Pulse DUT on 1*MRP PW=1s board VGS=10V PW=100ms 0.1 1 10 100 Qg, TOTAL GATE CHARGE (nC) VDS, DRAIN-SOURCE VOLTAGE (V) Figure 11 Gate Charge Figure 12 SOA, Safe Operation Area POWERDI is a registered trademark of Diodes Incorporated. DMP6050SFG Document number: DS37378 Rev. 1 - 2 4 of 6 www.diodes.com October 2014 © Diodes Incorporated DMP6050SFG r(t), TRANSIENT THERMAL RESISTANCE ADVANCE INFORMATION NEW PRODUCT 1 D=0.9 D=0.7 0.1 D=0.5 D=0.3 D=0.1 0.01 D=0.05 D=0.02 D=0.01 RθJA(t)=r(t) * RθJA RθJA=118oC/W Duty Cycle, D=t1 / t2 D=0.005 D=Single Pulse 0.001 1E-05 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIME (sec) 10 100 1000 Figure 13 Transient Thermal Resistance Package Outline Dimensions Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version. A A3 A1 D D2 L (4x) 1 Pin 1 ID 4 b2 (4x) E E2 8 Z (4x) 5 e L1 (3x) b (8x) POWERDI®3333-8 Dim Min Max Typ D 3.25 3.35 3.30 E 3.25 3.35 3.30 D2 2.22 2.32 2.27 E2 1.56 1.66 1.61 A 0.75 0.85 0.80 A1 0 0.05 0.02 A3 0.203 b 0.27 0.37 0.32 b2 0.20 L 0.35 0.45 0.40 L1 0.39 e 0.65 Z 0.515 All Dimensions in mm Suggested Pad Layout Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version. X G 8 Y2 5 G1 Y1 Y 1 4 Y3 X2 Dimensions C G G1 Y Y1 Y2 Y3 X X2 Value (in mm) 0.650 0.230 0.420 3.700 2.250 1.850 0.700 2.370 0.420 C POWERDI is a registered trademark of Diodes Incorporated. DMP6050SFG Document number: DS37378 Rev. 1 - 2 5 of 6 www.diodes.com October 2014 © Diodes Incorporated DMP6050SFG ADVANCE INFORMATION NEW PRODUCT IMPORTANT NOTICE DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated website, harmless against all damages. Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings noted herein may also be covered by one or more United States, international or foreign trademarks. This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the final and determinative format released by Diodes Incorporated. LIFE SUPPORT Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein: A. Life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems. Copyright © 2014, Diodes Incorporated www.diodes.com POWERDI is a registered trademark of Diodes Incorporated. DMP6050SFG Document number: DS37378 Rev. 1 - 2 6 of 6 www.diodes.com October 2014 © Diodes Incorporated