MSP0413W -40V(D-S) P-Channel Enhancement Mode Power MOS FET General Features ● VDS =-40V,ID =-13A RDS(ON) <15mΩ @ VGS=-10V RDS(ON) <18mΩ @ VGS=-4.5V ● High density cell design for ultra low Rdson Lead Free ● Fully characterized avalanche voltage and current ● Excellent package for good heat dissipation Application ● Power switching application ● Hard switched and high frequency circuits ● DC-DC converter Marking and pin assignment PIN Configuration Schematic diagram SOP-8 top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size Tape width Quantity MSP0413W MSP0413W SOP-8 Ø330mm 12mm 2500 units Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±20 V ID -13 A ID (100℃) -9 A Pulsed Drain Current IDM 50 A Maximum Power Dissipation PD 2.5 W TJ,TSTG -55 To 150 ℃ RθJA 50 ℃/W Drain Current-Continuous Drain Current-Continuous(TC=100℃) Operating Junction and Storage Temperature Range Thermal Characteristic Thermal Resistance ,Junction-to-Ambient(Note 2) MORE Semiconductor Company Limited http://www.moresemi.com 1/6 MSP0413W Electrical Characteristics (TA=25℃unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit Drain-Source Breakdown Voltage BVDSS VGS=0V ID=-250μA -40 - - V Zero Gate Voltage Drain Current IDSS VDS=-40V,VGS=0V - - 1 μA Gate-Body Leakage Current IGSS VGS=±20V,VDS=0V - - ±100 nA Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250μA -1.3 -2 -2.5 V Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-12A - 12 15 mΩ gFS VDS=-15V,ID=-10A 35 - - S - 2800 - PF - 320 - PF Off Characteristics On Characteristics (Note 3) Forward Transconductance Dynamic Characteristics (Note4) Input Capacitance Clss Output Capacitance Coss Reverse Transfer Capacitance Crss - 220 - PF Turn-on Delay Time td(on) - 11 - nS Turn-on Rise Time tr VDD=-20V, ,RL=2Ω - 75 - nS td(off) VGS=-10V,RGEN=6Ω - 89 - nS - 35 - nS - 40 - nC - 6 - nC - 12 - nC - - 1.2 V - - -13 A VDS=-20V,VGS=0V, F=1.0MHz Switching Characteristics (Note 4) Turn-Off Delay Time Turn-Off Fall Time tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS=-20V,ID=-12A, VGS=-10V Drain-Source Diode Characteristics Diode Forward Voltage (Note 3) VSD Diode Forward Current (Note 2) IS VGS=0V,IS=-12A Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. Surface Mounted on FR4 Board, t ≤ 10 sec. 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production MORE Semiconductor Company Limited http://www.moresemi.com 2/6 MSP0413W Test Circuit 1) EAS Test Circuit 2) Gate Charge Test Circuit 3) Switch Time Test Circuit MORE Semiconductor Company Limited http://www.moresemi.com 3/6 MSP0413W -ID- Drain Current (A) Normalized On-Resistance Typical Electrical and Thermal Characteristics (Curves) TJ-Junction Temperature(℃) -Vds Drain-Source Voltage (V) Figure 4 Rdson-Junction Temperature -ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance Normalized -Vgs Gate-Source Voltage (V) . -ID- Drain Current (A) Figure 3 Rdson- Drain Current MORE Semiconductor Company Limited Vsd Source-Drain Voltage (V) Figure 6 Source- Drain Diode Forward http://www.moresemi.com 4/6 Normalized BVdss C Capacitance (pF) MSP0413W TJ-Junction Temperature (℃) Figure 7 Capacitance vs Vds Figure 9 BVDSS vs Junction Temperature VGS(TH)(V) ID- Drain Current (A) Vds Drain-Source Voltage (V) TJ-Junction Temperature(℃) Figure 8 Safe Operation Area Figure 10 VGS(th) vs Junction Temperature r(t),Normalized Effective Transient Thermal Impedance Vds Drain-Source Voltage (V) Square Wave Pluse Duration(sec) Figure 11 Normalized Maximum Transient Thermal Impedance MORE Semiconductor Company Limited http://www.moresemi.com 5/6 MSP0413W SOP-8 Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 1.350 1.750 0.053 0.069 A1 0.100 0.250 0.004 0.010 A2 1.350 1.550 0.053 0.061 b 0.330 0.510 0.013 0.020 c 0.170 0.250 0.006 0.010 D 4.700 5.100 0.185 0.200 E 3.800 4.000 0.150 0.157 E1 5.800 6.200 0.228 0.244 e 1.270(BSC) 0.050(BSC) L 0.400 1.270 0.016 0.050 θ 0° 8° 0° 8° MORE Semiconductor Company Limited http://www.moresemi.com 6/6