LRC LBC858CDW1T1G Dual general purpose transistor Datasheet

LESHAN RADIO COMPANY, LTD.
Dual General Purpose
Transistors
These transistors are designed for general purpose amplifier
applications. They are housed in the SOT–363/SC–88 which is
designed for low power surface mount applications.
We declare that the material of product compliance with RoHS requirements.
S- Prefix for Automotive and Other Applications Requiring Unique Site and
Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LBC85** DW1T1G
S-LBC85** DW1T1G
6
5
4
1
2
3
• Device Marking:
SOT-363
(S-)LBC856ADW1T1G= 3A
(S-)LBC856BDW1T1G= 3B
(S-)LBC857BDW1T1G= 3F
(S-)LBC857CDW1T1G= 3G
(S-)LBC858BDW1T1G= 3K
(S-)LBC858CDW1T1G = 3L
(3)
(2)
Q1
Q2
MAXIMUM RATINGS
Symbol
BC856
BC857
BC858
Unit
Collector–Emitter Voltage
VCEO
–65
–45
–30
V
Collector–Base Voltage
VCBO
–80
–50
–30
V
Emitter–Base Voltage
VEBO
–5.0
–5.0
–5.0
V
IC
–100
–100
–100
mAdc
Rating
Collector Current –
Continuous
THERMAL CHARACTERISTICS
Characteristic
Total Device Dissipation
Per Device
FR–5 Board (Note 1.)
TA = 25°C
Derate Above 25°C
(4)
(5)
(6)
DEVICE MARKING
Symbol
Max
Unit
PD
380
250
mW
See Table
3.0
mW/°C
Thermal Resistance,
Junction to Ambient
RJA
328
°C/W
Junction and Storage
Temperature Range
TJ, Tstg
–55 to +150
°C
1. FR–5 = 1.0 x 0.75 x 0.062 in
ORDERING INFORMATION
Device
(1)
Shipping
LBC85*BDW1T1G
3000/Tape & Reel
LBC85*BDW1T3G
10000/Tape & Reel
Rev.O 1/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G,LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G,S-LBC858BDW1T1G,S-LBC858CDW1T1G
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Symbol
Min
Typ
Max
–65
–45
–30
–
–
–
–
–
–
–80
–50
–30
–
–
–
–
–
–
–80
–50
–30
–
–
–
–
–
–
–5.0
–5.0
–5.0
–
–
–
–
–
–
ICBO
–
–
–
–
–15
–4.0
nA
µA
hFE
–
–
–
90
150
270
–
–
–
–
125
220
420
180
290
520
250
475
800
–
–
–
–
–0.3
–0.65
–
–
–0.7
–0.9
–
–
–0.6
–
–
–
–0.75
–0.82
fT
100
–
–
MHz
Output Capacitance
(VCB = –10 V, f = 1.0 MHz)
Cob
–
–
4.5
pF
Noise Figure
(IC = –0.2 mA, VCE = –5.0 Vdc, RS = 2.0 kΩ,
f = 1.0 kHz, BW = 200 Hz)
NF
–
–
10
dB
Characteristic
Unit
OFF CHARACTERISTICS
Collector–Emitter Breakdown Voltage
(IC = –10 mA)
Collector–Emitter Breakdown Voltage
(IC = –10 µA, VEB = 0)
Collector–Base Breakdown Voltage
(IC = –10 A)
Emitter–Base Breakdown Voltage
(IE = –1.0 A)
LBC856 Series
LBC857 Series
LBC858 Series
V(BR)CEO
V
V(BR)CES
LBC856 Series
LBC857 Series
LBC858 Series
V
V(BR)CBO
LBC856 Series
LBC857 Series
LBC858 Series
V
V(BR)EBO
LBC856 Series
LBC857 Series
LBC858 Series
Collector Cutoff Current (VCB = –30 V)
Collector Cutoff Current (VCB = –30 V, TA = 150°C)
V
ON CHARACTERISTICS
DC Current Gain
(IC = –10 µA, VCE = –5.0 V)
LBC856A
LBC856B, LBC857B, LBC858B
LBC857C, LBC858C
LBC856A
LBC856B, LBC857B, LBC858B
LBC857C, LBC858C
Collector–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
(IC = –2.0 mA, VCE = –5.0 V)
VCE(sat)
Base–Emitter Saturation Voltage
(IC = –10 mA, IB = –0.5 mA)
(IC = –100 mA, IB = –5.0 mA)
VBE(sat)
Base–Emitter On Voltage
(IC = –2.0 mA, VCE = –5.0 V)
(IC = –10 mA, VCE = –5.0 V)
VBE(on)
V
V
V
SMALL–SIGNAL CHARACTERISTICS
Current–Gain – Bandwidth Product
(IC = –10 mA, VCE = –5.0 Vdc, f = 100 MHz)
Rev.O 2/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G,LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G,S-LBC858BDW1T1G,S-LBC858CDW1T1G
TYPICAL CHARACTERISTICS – LBC856
TJ = 25°C
VCE = -5.0 V
TA = 25°C
-0.8
V, VOLTAGE (VOLTS)
hFE , DC CURRENT GAIN (NORMALIZED)
-1.0
2.0
1.0
0.5
VBE(sat) @ IC/IB = 10
-0.6
VBE @ VCE = -5.0 V
-0.4
-0.2
0.2
VCE(sat) @ IC/IB = 10
0
-0.2
-1.0 -2.0 -5.0 -10 -20 -50 -100 -200
IC, COLLECTOR CURRENT (AMP)
-0.1 -0.2
-0.5
-50 -100 -200
-5.0 -10 -20
-1.0 -2.0
IC, COLLECTOR CURRENT (mA)
Figure 2. “On” Voltage
-2.0
-1.6
-1.2
IC =
-10 mA
-20 mA
-50 mA
-100 mA -200 mA
-0.8
-0.4
TJ = 25°C
0
-0.02
-0.05 -0.1 -0.2
-0.5 -1.0 -2.0
IB, BASE CURRENT (mA)
-5.0
-10
θVB, TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 1. DC Current Gain
-20
-1.0
-1.4
-1.8
-2.6
-3.0
-0.2
20
Cib
10
8.0
6.0
Cob
4.0
2.0
-0.1 -0.2
-0.5
-5.0 -10 -20
-1.0 -2.0
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitance
-50 -100
-0.5 -1.0
-50
-5.0 -10 -20
-2.0
IC, COLLECTOR CURRENT (mA)
-100 -200
Figure 4. Base–Emitter Temperature Coefficient
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT
C, CAPACITANCE (pF)
TJ = 25°C
-55°C to 125°C
-2.2
Figure 3. Collector Saturation Region
40
θVB for VBE
500
VCE = -5.0 V
200
100
50
20
-100
-1.0
-10
IC, COLLECTOR CURRENT (mA)
Figure 6. Current–Gain – Bandwidth Product
Rev.O 3/6
LESHAN RADIO COMP ANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G,LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G,S-LBC858BDW1T1G,S-LBC858CDW1T1G
TYPICAL CHARACTERISTICS – LBC857/LBC858
1.5
-1.0
TA = 25°C
-0.9
VCE = -10 V
TA = 25°C
-0.8
1.0
V, VOLTAGE (VOLTS)
hFE , NORMALIZED DC CURRENT GAIN
2.0
0.7
0.5
-0.7
VBE(on) @ VCE = -10 V
-0.6
-0.5
-0.4
-0.3
-0.2
0.3
VCE(sat) @ IC/IB = 10
-0.1
0.2
-0.2
-0.5 -1.0 -2.0
-5.0 -10 -20
-50
IC, COLLECTOR CURRENT (mAdc)
0
-0.1 -0.2
-100 -200
TA = 25°C
-1.6
-1.2
IC =
-10 mA
IC = -50 mA
IC = -200 mA
IC = -100 mA
IC = -20 mA
-0.4
-0.02
-55°C to +125°C
1.2
1.6
2.0
2.4
2.8
-10 -20
-0.1
-1.0
IB, BASE CURRENT (mA)
-0.2
10
Cib
7.0
TA = 25°C
5.0
Cob
3.0
2.0
1.0
-0.4 -0.6
-1.0
-2.0
-4.0 -6.0
-10
-20 -30 -40
-10
-1.0
IC, COLLECTOR CURRENT (mA)
-100
Figure 10. Base–Emitter Temperature
Coefficient
f,
T CURRENT-GAIN - BANDWIDTH PRODUCT (MHz)
Figure 9. Collector Saturation Region
C, CAPACITANCE (pF)
-100
-50
1.0
-2.0
0
-0.5 -1.0 -2.0
-5.0 -10 -20
IC, COLLECTOR CURRENT (mAdc)
Figure 8. “Saturation” and “On” Voltages
θVB , TEMPERATURE COEFFICIENT (mV/ °C)
VCE , COLLECTOR-EMITTER VOLTAGE (V)
Figure 7. Normalized DC Current Gain
-0.8
VBE(sat) @ IC/IB = 10
400
300
200
150
VCE = -10 V
TA = 25°C
100
80
60
40
30
20
-0.5
-1.0
-2.0 -3.0
-5.0
-10
-20
-30
-50
VR, REVERSE VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mAdc)
Figure 11. Capacitances
Figure 12. Current–Gain – Bandwidth Product
Rev.O 4/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G,LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G,S-LBC858BDW1T1G,S-LBC858CDW1T1G
r(t), TRANSIENT THERMAL
RESISTANCE (NORMALIZED)
1.0
D = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
ZθJA(t) = r(t) RθJA
RθJA = 328°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) RθJC(t)
P(pk)
t1
0.01
t2
DUTY CYCLE, D = t1/t2
0.001
SINGLE PULSE
0
1.0
10
100
1.0k
10k
100k
1.0M
t, TIME (ms)
Figure 13. Thermal Response
-200
1s
IC, COLLECTOR CURRENT (mA)
-100
-50
-10
-5.0
-2.0
-1.0
TA = 25°C
3 ms
TJ = 25°C
BC558
BC557
BC556
BONDING WIRE LIMIT
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
The safe operating area curves indicate IC–VCE limits of the
transistor that must be observed for reliable operation. Collector
load lines for specific circuits must fall below the limits indicated
by the applicable curve.
The data of Figure 14 is based upon TJ(pk) = 150°C; TC or TA
is variable depending upon conditions. Pulse curves are valid
for duty cycles to 10% provided TJ(pk) ≤ 150°C. TJ(pk) may be
calculated from the data in Figure 13. At high case or ambient
temperatures, thermal limitations will reduce the power that can
be handled to values less than the limitations imposed by the
secondary breakdown.
-5.0
-10
-30 -45 -65 -100
VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 14. Active Region Safe Operating Area
Rev.O 5/6
LESHAN RADIO COMPANY, LTD.
LBC856ADW1T1G,LBC856BDW1T1G,LBC857BDW1T1G,LBC857CDW1T1G,LBC858BDW1T1G,LBC858CDW1T1G
S-LBC856ADW1T1G,S-LBC856BDW1T1G,S-LBC857BDW1T1G,S-LBC857CDW1T1G,S-LBC858BDW1T1G,S-LBC858CDW1T1G
SC-88/SOT-363
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
A
G
DIM
6
5
4
S
-B1
2
3
D6PL
0.2 (0.008) M B
M
N
J
A
B
C
D
G
H
J
K
N
S
INCHES
MIN
MAX
0.071
0.087
0.045
0.053
0.031
0.043
0.012
0.004
0.026 BSC
--0.004
0.004
0.010
0.004
0.012
0.008 REF
0.079
0.087
MILLIMETERS
MIN
MAX
1.80
2.20
1.15
1.35
0.80
1.10
0.10
0.30
0.65 BSC
--0.10
0.10
0.25
0.10
0.30
0 .20 REF
2.00
2.20
C
K
H
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4.EMITTER 1
5. BASE 1
6.COLLECTOR 2
0.4 mm (min)
0.65 mm 0.65 mm
0.5 mm (min)
1.9 mm
Rev.O 6/6
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