Rohm IL300-X009T Power management (dual digital transistors) Datasheet

IMD10A
Power management (dual digital transistors)
Features
1) Two digital class transistors in a SMT package.
2) Up to 500mA can be driven.
3) Low VCE(sat) of drive transistors for low power dissipation.
Datasheet
Dimensions (Unit : mm)
(4)
(5)
(6)
(3)
(2)
(1)
Package, marking, and packaging specifications
Part No.
IMD10A
Package
Marking
Code
Basic ordering unit (pieces)
SMT6
D10
T108
3000
ROHM : SMT6
EIAJ : SC-74
Each lead has same dimensions
Absolute maximum ratings (Ta=25C)
(4)
(5)
(6)
R2
R1
DTr1
DTr2
R1
(3)
(2)
(1)
Equivalent circuit
DTr1
Parameter
Symbol
Limits
Unit
VCC
VIN
IC
−50
−5 to +5
−500
V
V
mA
Symbol
Limits
Unit
VCBO
VCEO
50
50
5
100
V
V
V
mA
Limits
300(TOTAL)
Unit
150
°C
°C
Supply voltage
Input voltage
Collector current
DTr2
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
VEBO
IC
Total
Parameter
Symbol
Power dissipation
Junction temperature
Pd
Tj
Storage temperature
Tstg
∗
−55 to +150
mW
∗
200mW per element must not be exceeded.
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○
1/2
2013.11 - Rev.C
Datasheet
IMD10A
Electrical characteristics (Ta=25C)
DTr1
Symbol
Parameter
Min.
−
−1.5
−
−
−
VI(off)
VI(on)
VO(on)
II
Input voltage
Output voltage
Input current
Output current
DC current gain
Transition frequency
Input resistance
Resistance ratio
IO(off)
GI
68
−
fT
Typ.
−
−
−0.1
−
−
−
Max.
R2 / R1
70
80
200
100
100
Symbol
Min.
Typ.
Max.
BVCBO
BVCEO
50
50
5
−
−
−
−
−
−
−
−
−
R1
Unit
−0.3
−
−0.3
−25
−0.5
−
−
Conditions
−
−
−
−
−
−
−
−
IO= −100mA , VO= −5V
VCE= −10V , IE=50mA , f=100MHz
−
−
VCC= 5V , IO= 100μA
VO= 0.3V , IO= 100mA
IO= 100mA , II= 5mA
VI= 2V
VCC= 50V , VI=0V
V
V
mA
μA
−
MHz
Ω
130
120
−
∗ Transition frequency of the device.
∗
DTr2
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
BVEBO
ICBO
−
−
−
IEBO
VCE(sat)
hFE
fT
100
R1
7
−
Unit
0.5
0.5
0.3
600
250
250
10
Conditions
IC=50μA
IC=1mA
V
V
V
μA
μA
V
IE=50μA
VCB=50V
VEB=4V
IC=10mA , IB=1mA
VCE=5V , IC=1mA
−
−
MHz
kΩ
13
VCE=10V , IE=
∗ Transition frequency of the device.
−5mA , f=100MHz
−
∗
Electrical characteristic curves
100
50
20
10
5
−200m
−50m
−20m
−10m
−5m
−1m
−500μ −1m
−5m −10m −20m −50m −100m−200m −500m
OUTPUT CURRENT : IO (A)
−5m −10m −20m
−50m −100m −200m
1k
−2m
Ta=100°C
25°C
−40°C
−50μ
−20μ
−10μ
−5μ
−1
−2
−5
−2
Ta= −40°C
25°C
100°C
−1
−500m
−100m
−500μ −1m −2m
−500m
−3
INPUT VOLTAGE : VI(off) (V)
Fig.4 Output current vs.
Input voltage (OFF characteristics)
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c 2013 ROHM Co., Ltd. All rights reserved.
○
200
100
50
Ta=100°C
25°C
−40°C
20
10
5
2
1
100μ 200μ
500μ
1m
2m
5m
10m
20m
50m 100m
COLLECTOR CURRENT : IC (A)
Fig.5 DC current gain vs. Collector current
2/2
−5m −10m −20m −50m −100m −200m −500m
OUTPUT CURRENT : IO (A)
VCE=5V
500
−1m
−500μ
DC CURRENT GAIN : hFE
OUTPUT CURRENT : Io (A)
−2m
Fig.2 Output voltage vs.
Output current characteristics
VCC=−5V
−5m
−10
OUTPUT CURRENT : IO (A)
Fig.1 DC current gain vs.
Output current characteristics
−10m
−20
−200m
Fig.3 Input voltage vs. Output current
(ON characteristics)
COLLECTOR SATURATION VOLTAGE : VCE (sat) (V)
1
−500μ −1m −2m
−2μ
−1μ
0
Ta=100°C
25°C
−40°C
−100m
VO = −0.3V
−50
−2m
2
−200μ
−100μ
−100
IO/II=20/1
−500m
OUTPUT VOLTAGE : VO(on) (V)
DC CURRENT GAIN : GI
200
−1
VO = −5V
Ta=100°C
25°C
−40°C
INPUT VOLTAGE : VI(on) (V)
1k
500
1
lC/lB=10
500m
200m
100m
50m
Ta=100°C
25°C
−40°C
20m
10m
5m
2m
1m
100μ 200μ
500μ 1m
2m
5m
10m
20m
50m 100m
COLLECTOR CURRENT : IC (A)
Fig.6 Collector-emitter saturation voltage
vs. Collector current
2013.11 - Rev.C
Notice
Notes
1) The information contained herein is subject to change without notice.
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provided only to illustrate the standard usage and operations of the Products. The peripheral
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R1102A
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