NCE Power NCE55P05S Nce p-channel enhancement mode power mosfet Datasheet

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NCE55P05S
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NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE55P05S uses advanced trench technology and
design to provide excellent RDS(ON) with low gate charge. It
can be used in a wide variety of applications.
General Features
● VDS =-55V,ID =-5A
RDS(ON) <80mΩ @ VGS=-10V
Schematic diagram
● High density cell design for ultra low Rdson
● Fully characterized avalanche voltage and current
● Excellent package for good heat dissipation
Application
● Power switching application
● Hard switched and high frequency circuits
● DC-DC Converter
Marking and pin assignment
SOP-8 top view
Package Marking and Ordering Information
Device Marking
Device
Device Package
Reel Size
Tape width
Quantity
55P05
NCE55P05S
SOP-8
Ø330mm
12mm
2500 units
Absolute Maximum Ratings (TA=25℃unless otherwise noted)
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Limit
Unit
-55
V
±20
V
ID
-5
A
ID (100℃)
-3.0
A
Pulsed Drain Current
IDM
-25
A
Maximum Power Dissipation
PD
3
W
TJ,TSTG
-55 To 150
℃
Drain Current-Continuous
Drain Current-Continuous(TC=100℃)
Operating Junction and Storage Temperature Range
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Thermal Characteristic
Thermal Resistance ,Junction-to-Ambient(Note 2)
RθJA
Electrical Characteristics (TA=25℃unless otherwise noted)
Parameter
Symbol
Condition
42
℃/W
Min
Typ
Max
Unit
Off Characteristics
Drain-Source Breakdown Voltage
BVDSS
VGS=0V ID=-250μA
-55
-
-
V
Zero Gate Voltage Drain Current
IDSS
VDS=-55V,VGS=0V
-
-
1
μA
Gate-Body Leakage Current
IGSS
VGS=±20V,VDS=0V
-
-
±100
nA
Gate Threshold Voltage
VGS(th)
VDS=VGS,ID=-250μA
-1.5
-2.6
-3.5
V
Drain-Source On-State Resistance
RDS(ON)
VGS=-10V, ID=-5A
-
64
80
mΩ
gFS
VDS=-15V,ID=-5A
16
-
-
S
-
1450
-
PF
-
145
-
PF
-
110
-
PF
-
8
-
nS
On Characteristics
(Note 3)
Forward Transconductance
Dynamic Characteristics
(Note4)
Input Capacitance
Clss
Output Capacitance
Coss
Reverse Transfer Capacitance
Switching Characteristics
Crss
VDS=-20V,VGS=0V,
F=1.0MHz
(Note 4)
Turn-on Delay Time
td(on)
Turn-on Rise Time
tr
VDD=-30V, ,RL=30Ω
-
9
-
nS
td(off)
VGS=-10V,RGEN=6Ω
-
65
-
nS
-
30
-
nS
-
26
-
nC
-
4.5
-
nC
-
7
-
nC
-
-
1.2
V
-
-
-5
A
Turn-Off Delay Time
Turn-Off Fall Time
tf
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
VDS=-30V,ID=-5A,
VGS=-10V
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3)
Diode Forward Current
(Note 2)
VSD
IS
VGS=0V,IS=-3A
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. Surface Mounted on FR4 Board, t ≤ 10 sec.
3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%.
4. Guaranteed by design, not subject to production
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NCE55P05S
Test Circuit
1) EAS Test Circuit
2) Gate Charge Test Circuit
3) Switch Time Test Circuit
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(Curves)
-ID- Drain Current (A)
Normalized On-Resistance
Typical Electrical and Thermal Characteristics
TJ-Junction Temperature(℃)
-Vds Drain-Source Voltage (V)
Figure 4 Rdson-Junction Temperature
-ID- Drain Current (A)
Vgs Gate-Source Voltage (V)
Figure 1 Output Characteristics
Qg Gate Charge (nC)
Figure 2 Transfer Characteristics
Figure 5 Gate Charge
Is- Reverse Drain Current (A)
Rdson On-Resistance Normalized
-Vgs Gate-Source Voltage (V)
-ID- Drain Current (A)
Vsd Source-Drain Voltage (V)
Figure 3 Rdson- Drain Current
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Figure 6 Source- Drain Diode Forward
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Normalized BVdss
C Capacitance (pF)
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TJ-Junction Temperature (℃)
Vds Drain-Source Voltage (V)
Figure 9
BVDSS vs Junction Temperature
ID- Drain Current (A)
Figure 7 Capacitance vs Vds
TJ-Junction Temperature(℃)
Vds Drain-Source Voltage (V)
Safe Operation Area
Figure 10
VGS(th) vs Junction Temperature
r(t),Normalized Effective
Transient Thermal Impedance
Figure 8
Square Wave Pluse Duration(sec)
Figure 11 Normalized Maximum Transient Thermal Impedance
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SOP-8 Package Information
Symbol
Dimensions In Millimeters
Dimensions In Inches
Min.
Max.
Min.
Max.
A
1.350
1.750
0.053
0.069
A1
0.100
0.250
0.004
0.010
A2
1.350
1.550
0.053
0.061
b
0.330
0.510
0.013
0.020
c
0.170
0.250
0.006
0.010
D
4.700
5.100
0.185
0.200
E
3.800
4.000
0.150
0.157
E1
5.800
6.200
0.228
0.244
e
1.270(BSC)
0.050(BSC)
L
0.400
1.270
0.016
0.050
θ
0°
8°
0°
8°
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NCE55P05S
Attention:
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