PHILIPS AN10958 Fluorescent lamp driver with pfc using the uba2015/16 family Datasheet

AN10958
Fluorescent lamp driver with PFC using the UBA2015/16
family
Rev. 2 — 9 August 2012
Application note
Document information
Info
Content
Keywords
UBA2015, UBA2015A, UBA2016A fluorescent lamp driver, PFC
Abstract
This application note describes designs using IC family UBA2015,
UBA2015A and UBA2016A for common ballast topologies.
The IC is a controller used in electronic ballast for fluorescent lamps
incorporating controllers and NMOST drivers for Power Factor Correction
(PFC) and the half-bridge circuit.
The high-voltage fluorescent lamp ballast controller drives a zero-voltage
switching resonant topology. The lamp controller module includes a
high-voltage level shift circuit and several protection features. The
protection features include hard switching/capacitive mode protection,
half-bridge overcurrent (coil saturation) protection, lamp overvoltage (lamp
removal) protection and temperature protection.
In addition to the lamp controller, the IC also contains a PFC controller.
The quasi-resonant operation guarantees efficient operation of the PFC
circuit. Overcurrent protection, overvoltage protection and
demagnetization sensing ensure safe operation under all conditions. The
brownout protection of the PFC controller reduces the half-bridge
frequency to prevent excessive currents.
The proprietary high-voltage BCD power logic process enables efficient,
direct start-up from the rectified universal mains voltage. The IC can drive
half-bridge circuits with a supply voltage up to 600 V (AC).
The PFC and lamp controller combination makes the IC suitable for
dimmable or fixed current output fluorescent ballasts with a PFC for AC
mains voltages up to 390 V.
AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
Revision history
Rev
Date
Description
v.2
20120809
second version
v.1
20110620
first version
Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
AN10958
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 August 2012
© NXP B.V. 2012. All rights reserved.
2 of 56
AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
1. Introduction
1.1 General IC description
Today’s market demands high-quality, reliable, lightweight, small and efficient electronic
High Frequency (HF) ballast with lamp end-of-life detection. The high-end market
segment also requires dimming functionality.
Electronic ballasts provide high efficiency performance because the lamp is operated at
high frequencies above 10 kHz. At this frequency, the lamp is more efficient when
compared to a magnetic ballast operating at 50 Hz to 60 Hz. High frequency operation
enables smaller magnetic components in the electronic ballast to be smaller. This
reduction makes electronic ballasts are approximately one fifth the weight of magnetic
ballasts.
The UBA2015, UBA2015A and UBA2016A combines Power Factor Correction (PFC) and
half-bridge controller in one IC which reduces the component cost significantly and
increases reliability. It has several protection mechanisms such as overvoltage/no ignition,
coil saturation, overtemperature and on some pins, open/short protection to guarantee
reliable and safe operation.
The integrated dimming option allows control of the lamp current down to 1 % of the
nominal lamp current. The integrated double-sided rectification of the lamp current
feedback signal and a control loop compensation network pin allows stable lamp
operation and achieves good dimming performance.
The IC is intended for fluorescent lamp ballast with fixed or dimmable light output, with
PFC for AC mains voltages up to 390 V.
A feature list, block diagram and flow chart for the IC are provided in the IC data sheet.
1.2 Basic electronic ballast circuit
Cs
VAC
EMI
Ls
Lpfc
Lr
PFC AND HALF-BRIDGE
CONTROLLER/DRIVER
Cr
Ls
Cs
Cdc
019aaa610
The feedback signals are not shown.
Fig 1.
AN10958
Application note
Basic electronic ballast circuit for inductive heating topology
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 August 2012
© NXP B.V. 2012. All rights reserved.
3 of 56
AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
1.2.1 Power factor correction
Lighting applications above 25 W need a PFC circuit to fulfill the Total Harmonic Distortion
(THD) and Power Factor (PF) requirements. The PFC circuit is actually a boost or step-up
converter, therefore the output voltage must be higher than the peak AC mains voltage.
The PFC provides a fixed DC output voltage which helps to create a better defined
half-bridge circuit and therefore longer lamp life. A high DC voltage also results in more
efficient ballasts for lamps operating at higher voltages.
The PFC operates at a fixed on-time over one mains cycle. The PFC circuit inductor peak
current follows the sinusoidal mains waveform. EMI filtering averages the PFC switching
current and blocks common mode currents (see Figure 2).
The frequency limit also reduces switching losses using valley skipping are reduced which
is very effective at low AC mains input voltage and medium to low output load conditions.
I
I
(1)
(2)
(3)
(1)
(2)
t
0.5 × Tac
t
zero current switching
on-time
TPFC
019aaa608
a. Half AC mains cycle
b. PFC switching cycle
(1) ILPFC(peak).
(1) IQPFC.
(2) ILPFC.
(2) IDPFC.
019aaa609
(3) Iac(avg).
Fig 2.
PFC circuit currents
A fixed output voltage has the advantage that the half-bridge circuit can be designed for a
high input voltage. The fixed bus voltage makes the half-bridge design more efficient for
lamps with a high operating voltage such as T5 lamps.
1.2.2 Inductive heating half-bridge and ballast
Refer to Figure 1. The capacitor (Cr) across the lamp is the resonant capacitor and
inductor (Lr) is the resonant inductor. The capacitor in series with the lamp is the DC
blocking capacitor (CDC). Before ignition, the electrodes are preheated at a predefined
half-bridge current (UBA2016A) or frequency (UBA2015).
After preheat, the lamp voltage increases while sweeping the half-bridge operating
frequency down to the resonant frequency. Finally, the lamp ignites when the lamp ignition
voltage is reached. When the lamp does not ignite, the switching frequency ramp down is
stopped to avoid damage to components. Then a new ignition attempt is started. After a
maximum of two ignition attempts, the IC enters a standby mode.
Once the lamp is ignited, the resonant tank and switching frequency limit the amount of
current through the lamp. The half-bridge operating frequency controls the lamp current.
AN10958
Application note
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Rev. 2 — 9 August 2012
© NXP B.V. 2012. All rights reserved.
4 of 56
AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
1.2.3 IC family overview
This family of half-bridge controller ICs comprises three functionally different versions. All
versions are available in both SO20 and DIP20 packages. The functional differences are
explained in Table 1.
Table 1.
1.2.3.1
IC family overview
Function
UBA2015
UBA2015A
UBA2016A
PFC controller
yes
yes
yes
Preheat operation
current controlled and
fixed frequency
current controlled and
fixed frequency
current controlled
Boost function
no
no
yes
Dim function
no
yes
yes
Preheat operation
The current controlled preheat operation is intended for a series-resonant topology where
the half-bridge current is equal to the filament currents. The accuracy is independent of
the LC tank tolerances. Therefore, the preheat frequency is closer to the maximum
preheat voltage allowed. As a result, the preheat current is higher than with fixed
frequency preheat.
The fixed frequency preheat operation is intended for multi-lamp ballasts where the total
half-bridge current is not equal to the filament current. For example: the half-bridge
current is reduced by a factor of two when a lamp is removed in a two-lamp ballast with
conventional series-resonant topology.
1.2.3.2
Boost function
The boost function is used for amalgam lamps or outdoor applications to provide a rapid
light output run-up time. The run-up time is the time a discharged lamp takes to reach
80 % of the nominal light output. The boost function allows the lamp to be operated at 1.5
to 2.0 times its nominal current. As a result, the lamp reaches the optimum operating
temperature sooner. The boost is applied at ballast power-on. A capacitor in the
application determines the boost time.
1.2.3.3
Dim function
The dim function is intended for energy harvesting or light reduction.
2. Basic circuit description
This section describes the deep dimming ballast in the inductive series-resonant topology
shown in Figure 1. The inductors Ls and Lr are coupled, therefore the current through the
filaments is inductively coupled to the current through Lr in the LC tank.
A complete electronic schematic of a ballast with dimming and boosting using the
UBA2016A is shown in Figure 3. This application note uses this schematic as a guide.
AN10958
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 August 2012
© NXP B.V. 2012. All rights reserved.
5 of 56
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NXP Semiconductors
AN10958
Application note
J3
2
1
C1
Chassis
D6
2.2 nF X1/Y2
250 V AC
CON4
J1
F1
fuse holder
2 +
RV1
710 V
1 -
C3
100 nF X2
275 V AC
2
4
1
3
PMBD914
C34
100 nF
1N4007
C6
150 nF
400 V
3
6
D2
1N4007
2
6
1
R31
100 Ω
D4
1N4007
SHHB
10 kW
500 V
R47
10 kΩ
10 pF
500 V
C36
100 nF
R33
reserved
VCdc
Q5
BFT46
R42
4.7 kΩ
1%
reserved
R41
200 kΩ
R23
SHHB
R39
1 kΩ
C15
SHHB
GLHB
T3A
2.5 mH Np:Ns=30:1:1
3
Q2
2SK3767
6
5 WB1
VDD
GLHB
C18
470 nF
C20
R11
R36
470 kΩ
10 kΩ
GLHB
SHHB
FSHB
11
10
12
9
13
8
14
15
16
7
UBA2016AT
6
5
17
4
18
3
19
100 nF GHHB
20
50 V
2
1
BOOST
DIM
R24
CPT
3.3 kΩ
D7
BAS101
CIFB
C23
IREF
100 nF
VFB
VFB
EOL
EOL
IFB
R19
IFB
SLHB
SLHB
R12
6.8 kΩ
DIM
CF
100 kΩ
C16
1.5 nF
C35
10 nF
2.2 kΩ
C21
10 nF
R21
33 kΩ
1%
C19
100 pF
J4
C25
220 pF
C0G
1%
C24
3.3 nF
R22
1 kΩ
C30
10 nF
C26
82 nF
C22
10 nF
4
3
2
C10
3.3 nF
2 kV
C13
7
8 WB2
68 nF
100 V
T3C
1
CON4
VCdc
R7
5.1 MΩ
SLHB
R16
3.3 Ω
1%
0W25
GHHB
C12
68 nF
100 V
2
GPFC
GND
VFB
Q3
2SK3767
AUXPFC
D8A
BAV99
D8B
BAV99
VBUS
GHHB
D11
PMBD914
R35
47 kΩ
U1
FBPFC
COMPPFC
GPFC
C8
330 pF
500 V
SHHB
T3B
C28
47 pF
FBPFC
470 nF 82 kΩ
C27
100 nF
reserved
R25
470 kΩ
500 V
C17
1 nF
100 pF
2 kV
R29
3.3 kΩ
1%
BOOST
10 μF
25 V
BOOST
C29
AUXPFC
fuse holder cover
C11
130 kΩ
470 nF
500 V
630 V DC
reserved
C5
FBPFC
C37
Vbus
R44
330 kΩ
500 V
Q6
BC847C
F4
R15
R28 PMBD914
3.9 Ω
1%
1W
R27
3.9 Ω
1%
1W
R5
2.2 MΩ
R17
3.3 Ω
1%
0W25
R18
330 kΩ
500 V
reserved
OPTION
R6
5.1 MΩ
C14
68 nF
400 V DC
10 %
VBUS
EOL
R4
1 MΩ
500 V
reserved
R20
180 kΩ
1%
D9
PMBD6100
IFB
R10
2.7 Ω
1W
D15
PMBD7000
R37
R13
18 Ω
1%
0W25
R14
18 Ω
1%
0W25
BOOST
1Ω
reserved
R45
27 kΩ
C31
100 nF
R46
220 kΩ
1%
Q4
BC847C
reserved
R3
75 kΩ
reserved
R38
100 kΩ
reserved
D12
PMBD914
reserved
DIM
019aab530
Fig 3.
Complete electronic ballast circuit for inductive series-resonant topology
AN10958
6 of 56
© NXP B.V. 2012. All rights reserved.
R9
2.7 Ω
1W
Fluorescent lamp driver with PFC using the UBA2015/16 family
Rev. 2 — 9 August 2012
All information provided in this document is subject to legal disclaimers.
C32
10 nF
D10
AUXPFC
DIM
F3
T1A
R34
330 kΩ
1%
200 V
VBUS
R26
R40
C33
100 nF
R32
390 kΩ
1%
Q1
2SK3767
GPFC
C7
10 μF
450 V
4.7 nF
D13
PMBD914
1 MΩ
R43
4.7 kΩ
8
C9
R8
UF4006
T2
5.0 mH Np:Ns=51:1
100 nF X2
275 V AC
R30
390 kΩ
1%
D5
2
D16
PMBD914
4
Q7
BC847C
MMBZ15VAL
VBUS
D3
1N4007
C4
EFD15
10 mH
N=1
T1
D14
DN2
D1
1N4007
L1 (2 ´ 47 mH B82731M) reserved
L4 (2 ´ 47 mH B82731T)
CON4
F2
thermal fuse
R2
220 Ω
33 nF
400 V reserved reserved
DN1
MMBZ15VAL
reserved
4 Mains_L
3 Mains_N
C2
AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
The circuit diagram of the PFC section is shown in Figure 4. Signal FBPFC is the
feedback to the controller. The bus voltage VBUS connects to the half-bridge circuit. The
AUXPFC signal is fed to the controller. The GPFC is the gate drive signal from the
controller.
J1
2
1
D3
C1
Chassis
D1
VBUS
D2
R1
D4
J2
4
Mains_L
3
Mains_N
2
F1
2
1
RV1
1
C5
L1
4
C4
C3
3
T1
C2
2
R2
3
6
D5
D6
Q1
8
GPFC
R4
R3
D7
AUXPFC
R5
reserved
FBPFC
R6
R7
R8
C6
019aaa611
Fig 4.
PFC section
The inductive mode series-resonant topology is shown in Figure 5. An inductor coupled to
the resonant inductor heats the electrodes. The bus voltage is from the PFC circuit output.
GHHB and GLHB are the gate drive signals from the controller. SHHB is connected to the
input of the controller and provides a supply for the controller during oscillation states.
SLHB is connected to the input of the controller. The VFB signal is the lamp voltage
feedback. IFB is the lamp current feedback. EOL is the feedback of the DC blocking
capacitor C12. The VCDC signal provides the start-up current to the VDD pin.
AN10958
Application note
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Rev. 2 — 9 August 2012
© NXP B.V. 2012. All rights reserved.
7 of 56
AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
C7
R9
R10
VBUS
VFB
T2A
C8
D8
R11
Q2
GHHB
3
T2B
2
C9
J3
4
SHHB
6
3
5
2
Q3
C11
C10
GLHB
7
1
8
VCdc
T2C
R12
R16
EOL
SLHB
R13
R15
R14
R17
C12
D9
IFB
R18
R19
R20
R22
R23
C13
R21
D10
019aaa612
Fig 5.
Half-bridge section inductive mode series-resonant topology
The circuit diagram of the PFC and half-bridge controller is shown in Figure 6. AUXPFC,
FBPFC and GPFC connect to the PFC circuit. The VDD pin receives the start-up current
from VCDC (support relamp) or VBUS (no support for relamp). During oscillation states, the
VDD pin is supplied by the dV/dt supply generated using the SHHB pin. The signals
SHHB, GHHB, GLHB, and SLHB connect to the half-bridge NMOSTs. The boost signal is
generated from the VBUS voltage. The dimming input circuit generates the DIM signal.
The VFB signal is the lamp voltage feedback signal. IFB is the lamp current feedback
signal. EOL is the voltage of the DC blocking capacitor used for lamp end-of-life detection.
The start-up resistor R31 can be connected to the output of the bridge rectifier to reduce
the power cycle time.
AN10958
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 August 2012
© NXP B.V. 2012. All rights reserved.
8 of 56
AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
AUXPFC
D11
R24
VCdc
C16
R25
C15
R26
C14
VBUS
C17
VBUS
C18
R29
R27
D12
R28
FBPFC
U1
reserved
R30
FBPFC
C19
R31
COMPPFC
AUXPFC
SHHB
AUXPFC
GPFC
GPFC
GND
C20
C22
D13A
VDD
C23
D13B
GLHB
C24
SHHB
GLHB
SHHB
FSHB
GHHB
11
10
12
9
13
8
14
7
15
16
UBA2016A
6
5
17
4
18
3
19
2
20
1
BOOST
R32
DIM
DIM
CPT
CF
CIFB
C21
IREF
VFB
VFB
EOL
EOL
IFB
R33
IFB
SLHB
GHHB
C25
C26
C27 C28
SLHB
C29
R34
R35
C30
C31
019aaa613
Fig 6.
Controller section
The dim control input circuit is described in Figure 7. An AC current from node SHHB of
the half-bridge circuit is fed through the galvanic isolation transformer T3. The voltage
from an external DC voltage source of 0 V to 10 V can be connected to the user side of
T3. Due to the current through T3, the transformer voltage is clamped to the input voltage.
The clamped voltage is sensed on the ballast side of T3 and filtered. The DIM signal is fed
to the controller.
AN10958
Application note
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Rev. 2 — 9 August 2012
© NXP B.V. 2012. All rights reserved.
9 of 56
AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
J4
4
3
D14
F2
2
1
DN1
C33
C32
R36
T3
4
2
6
1
SHHB
D15
Q4
R38
R37
Q5
C34
DIM
Q6
C35
R39
R40
reserved
R41
019aaa614
Fig 7.
Dim control input section
3. Pin-to-pin component selection
The functionality of the ballast circuit subblocks is described in Table 2 to Table 4 based
on the functions assigned to each pin.
Table 2.
Symbol
Pin
Description
FBPFC
11
PFC voltage feedback, overvoltage protection, overcurrent protection,
open/short protection; see Section 3.12 on page 34
COMPPFC
12
PFC voltage control loop compensation network, input of on-time
modulator; see Section 3.13 on page 36
AUXPFC
13
demagnetization detection, THD wave shaping, open pin protection; see
Section 3.14 on page 37.
GPFC
14
PFC gate drive; see Section 3.15 on page 38
Table 3.
AN10958
Application note
PFC function pins
Half-bridge function pins
Symbol
Pin
Description
SLHB
1
preheat current regulation, coil saturation protection; see Section 3.1 on
page 11
IFB
2
lamp current feedback input, lamp-on detection, internal lamp current
rectifier, lamp overcurrent detection; see Section 3.2 on page 13
EOL
3
lamp end-of-life detection; see Section 3.3 on page 18
VFB
4
lamp voltage feedback, lamp overvoltage detection, open/short
protection; see Section 3.4 on page 21
CIFB
6
input of the internal VCO, time constant of the lamp current control loop,
ignition frequency ramp down speed after preheat; Section 3.6 on
page 26
CF
7
timing capacitor of oscillator; Section 3.7 on page 27
CPT
8
preheat timer, fault timer, open/short protection; see Section 3.8 on
page 28
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 August 2012
© NXP B.V. 2012. All rights reserved.
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AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
Table 3.
Half-bridge function pins …continued
Symbol
Pin
Description
DIM
9
dimming input, reducing the lamp-on-detection threshold; see
Section 3.9 on page 29
BOOST
10
lamp current boost input (UBA2016A); see Section 3.10 on page 30
PH/EN
10
preheat frequency setting and enable/disable (UBA2015/UBA2015A);
see Section 3.11 on page 33
GLHB
17
low-side half-bridge gate driver; see Section 3.18 on page 43
SHHB
18
hard switching regulation and protection input, ground of high-side driver,
source of the dV/dt supply; see Section 3.19 on page 43
FSHB
19
floating supply of the high-side driver; see Section 3.20 on page 43
GHHB
20
high-side half-bridge gate driver; see Section 3.21 on page 43
Table 4.
Other function pins
Symbol
Pin
Description
IREF
5
IC reference current; see Section 3.5 on page 26
GND
15
IC ground reference; see Section 3.16 on page 39
VDD
16
IC supply, gate drive supply, restart after relamp; see Section 3.17 on
page 39
3.1 SLHB pin: preheat current regulation, coil saturation protection
Refer to Figure 8.The resistors R13 and R14 in parallel (R13//R14 = RSLHB) sense the
half-bridge current. During preheat, the half-bridge controller with a preheat threshold
Vth(ph)(SLHB) = 0.5 V regulates the half-bridge current. As a result, VSLHB(peak) = 500 mV.
VBUS
UBA2016
Q3
GHHB
VDD
Lres
SHHB
on
GHHB
GLHB
off
8.5 μA
VBUS
preheat
480 mV
Q2
V(SHHB)
GLHB
SLHB
Rx
0V
Ipeak
saturation
2.5 V
R13
I(Lres)
0A
R14
I(R13//R14)
t
019aaa616
019aaa615
a. The SLHB pin circuit diagram.
Fig 8.
b. Half-bridge current and voltage waveforms.
The SLHB pin
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Application note
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Rev. 2 — 9 August 2012
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AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
The saturation protection is always active and it protects the circuit against:
• coil saturation
• overvoltage of the resonant tank and the lamp
The IC has a fixed ratio of five between the preheat level and the saturation voltage level.
The internal bias current source of 8.5 A allows the current ratio (saturation/preheat) to
be increased by adding resistor Rx in series with the SLHB pin.
Equation 1 results the value for resistor Rx:
(1)
V th  ph   SLHB   I bias  SLHB  + V th  ph   SLHB   I sat – V th  sat   SLHB   I bias  SLHB  – V th  sat   SLHB   I ph  peak 
Rx = ---------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------------I bias  SLHB    I sat – I ph  peak  
Vth(ph)(SLHB) = 0.5 V; Vth(sat)(SLHB) = 2.5 V; Ibias(SLHB) = 8.5 A.
When Rx is known, Equation 2 calculates the R13 and R14 resistor values:
V th  ph   SLHB  – I bias  SLHB   Rx
R  13//14  = ----------------------------------------------------------------------------I bias  SLHB  + I ph  peak 
on
GHHB
GLHB
off
on
GHHB
GLHB
off
VBUS
VBUS
V(SHHB)
V(SHHB)
0V
0V
I(Lres)
0A
I(Lres)
0A
I(R13//R14)
I(R13//R14)
t
t
019aaa617
a. Hard switching
Fig 9.
(2)
019aaa618
b. Coil saturation
Simulated current through low-side sense resistor (R13//R14)
The hard switching spikes on the SLHB are internally blanked with 300 ns (leading edge
blanking) to prevent a false trigger of the coil saturation.
During preheat and ignition, the saturation protection increases the HB operating
frequency to reduce the HB inductor current. In preheat and ignition state the slow fault
timer is used for saturation protection.
In burn state, the saturation protection reacts very fast to detect lamp removal or broken
lamp conditions.
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3.2 IFB pin: lamp current feedback, lamp-on detection, internal lamp
current rectifier, overcurrent detection
Ballasts that run at the minimum operating frequency do not require a lamp current sense
resistor and lamp-on detection. The IFB pin can be left open or shorted to ground. If no
lamp-on is detected, the controller sweeps the frequency down. When the minimum
switching frequency is reached, the IC assumes that the lamp has ignited. The IC has an
internal double-sided rectifier on the IFB pin which has no voltage drop.
3.2.1 Lamp-on detection (LOD)
The LOD limits the visible flash when the ballast is switched on while the ballast control
input is at a deep dim level.
After LOD (also known as ignition detection) is triggered, the IC enters Burn state. The IFB
and VFB pins on the IC trigger the LOD. The voltage on the IFB pin must exceed
Vth(lod)(IFB) and the voltage on the VFB pin must be < Vth(lod)(VFB). Both pin conditions must
apply for a continuous period of td(lod) = 3 ms. The delay is implemented to ensure that
sufficient ionization energy is transferred to the lamp. This implementation ensures the
ignition of multi-lamp applications while limiting the flash at start-up.
! ' &$* , #$& #
! " #$& DDD
(1) See Figure 11.
Fig 10. Lamp-on detection delay time
The threshold Vth(lod)(IFB) is a function of the voltage on the DIM pin. The relationship
between the LOD threshold and the DIM voltage is shown in Figure 11. The Vth(lod)(IFB)
signal is filtered using a time constant of approximately 100 s. The threshold is therefore
compared to the average double-sided rectified voltage on the IFB pin.
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Fluorescent lamp driver with PFC using the UBA2015/16 family
Vth(lod)(IFB) (V)
1.12
0.35
0.00
0.5
VDIM (V)
1.27
019aaa619
Fig 11. Lamp on detection threshold on the IFB pin as function of the DIM pin voltage
The voltage on the VFB pin must drop < Vth(lod)(VFB) = 1 V to trigger the LOD function.
Remark: If controller reaches the minimum operating frequency of (VCIFB = 3 V) and the
LOD condition is not met, the controller assumes that the lamps are ignited. In this case,
the controller always enters the burn state.
3.2.2 Lamp current feedback
Ballasts that require only lamp current control without deep dimming, a single sense
resistor is sufficient.
Applications that require deep dimming (below 10 %) are advised to use a non-linear
sense circuit. The intention of the non-linear circuit is to guarantee a strong feedback
signal for low lamp currents. Non-linear sensing has two advantages during deep
dimming:
• The circuit is less sensitive to tolerances
• The circuit is less sensitive to low frequency ripples
• The minimum lamp current setting via input the DIM pin is more accurate
Place resistor R33 and C29 close to the IC (see Figure 12b).
3.2.3 Overcurrent lamp protection
The IC enters Stop state when both of the following conditions are met:
• The peak of the absolute voltage at the IFB pin exceeds Vth(ocd)(IFB)
• The IC is oscillating at fhigh
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Fluorescent lamp driver with PFC using the UBA2015/16 family
3.0 V
HALF-BRIDGE
CONTROLLER
LAMP-ON
DETECTION
Ilamp
DIM
R33
IFB
R20
C29
VCO
double-sided rectifier
UBA2016A
CIFB
C21
R22
C26
R35
019aaa620
a. Normal application with basic IC
Ilamp
R33
R20
R18
R22
R19
IFB
C29
D10
UBA2016A
019aaa621
b. Deep dimming
R18, R19, D10 not mounted.
Fig 12. Lamp current sense circuit and the IFB pin
Typical values for lamps with nominal current of 300 mA:
Figure 12a: R20 = R22 = 2.4 ; R33 = 1.0 k; C29 = 100 pF; R18 = R19 = reserved;
D10 = reserved.
Figure 12b: R20 = R22 = 18 ; R18 = R19 = 2.7 ; R33 = 1.0 k; C29 = 100 pF; D10 =
PMBD7000.
3.2.3.1
Calculations for Figure 12a
I lamp  nom   peak  = I lamp  nom   SQRT  2  = 424 mA
(3)
After double-sided rectifying, Equation 4 gives the average lamp current.
I lamp  nom   avg  = I lamp  nom   peak    2    = 270 mA
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Fluorescent lamp driver with PFC using the UBA2015/16 family
The internal regulation voltage Vreg(IFB) = 1.27 V when application does not pull-down the
DIM voltage.
Equation 5 calculates the value for R20 plus R22.
V reg  IFB 
R20 + R22 = ----------------------------------= 4.7 
I lamp  nom   avg 
(5)
Therefore R20 = R22 = 2.35 .
3.2.3.2
Calculations for Figure 12b
Equation 6 calculates the parallel resistance value for R18 and R19.
V reg  IFB  – V f  avg 
R  R18//R19  = ------------------------------------------- = 1.37 
I lamp  nom   avg 
(6)
The average forward voltage of the diode increases as a function of the current through
the diode, the Vf(avg) = Vf  1.5 (based on measurements).
The dimming target of the RMS lamp current is 2 % of nominal. Ilamp(dim)(rms) = 6 mA.
Equation 7 calculates the average lamp dimming current.
2
I lamp  dim   avg  = I lamp  dim   rms   SQRT  2   --- = 5.4 mA

(7)
The IFB pin voltage level in deep dimming must be 150 mV or higher. The reason for this
requirement is the accuracy of the internal double-sided rectifier.
Equation 8 calculates the series resistance value of R20 plus R21.
V reg  IFB   dim 
R  20 + 22  = ---------------------------------= 28 
I lamp  dim   avg 
(8)
Where Vreg(IFB)(dim) = 150 mV, therefore R20 = R22 = 14 .
3.2.3.3
Lamp at end-of-life and deep dimming sense circuit
The IC tries to ignite the broken lamp, until the fault timer expires, while the voltage on
VFB regulates the operating frequency. Current flows through the lamp current-sense
circuit due to the parasitic capacitances inside the half-bridge transformer because of the
high voltage across the resonant circuit.
Take care to ensure that the lamp-on detection is not triggered. Therefore the R20 and
R22 values in Figure 12b (deep dimming) must not be too high (see Figure 13).
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Fluorescent lamp driver with PFC using the UBA2015/16 family
T2
VBUS
CBA
C10
Q2
A
C9
CAC
B
CBC
C
Cstray
C11
Istray
Q3
C12
C12
Vignition
RSENSE
RSENSE
019aaa622
019aaa623
a. Positions of stray capacitances in the half-bridge
transformer
b. Simplified model showing the stray current
Fig 13. Stray capacitances of a half-bridge transformer for inductive topology
Rsense = R20 + R22.
The stray capacitance is the combination of all inter-winding capacitances (Equation 9).
C stray = C BC   C BA + C AC 
(9)
C12 is much larger than Cstray, therefore C12 can be ignored. Equation 10 calculates the
stray current.
I stray = V ignition   2    f ignition  C stray 
(10)
Equation 11 calculates the average stray current.
I stray  avg  = 4  V ignition  peak   f ignition  C stray
(11)
A design requirement is applied to prevent false LOD triggering in deep dimming
non-linear current sense circuits as shown in Equation 12.
I stray  avg   R sense  150 mV
(12)
which is equal to Equation 13.
4  V ignition  peak   f ignition  C stray  R sense  150 mV
(13)
Some realistic values are:
Vignition(peak) = 1.2 kV; fignition = 60 kHz; Cstray = 15 pF → Rsense < 35 .
3.2.3.4
Multiple lamp current sense
The lamp current sense circuit for multiple lamps is very similar to the single lamp
application; see Figure 14.
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Fluorescent lamp driver with PFC using the UBA2015/16 family
lamp 1
lamp 1
lamp 2
lamp 2
R
R
IFB
R
C
R
UBA2016A
IFB
C
UBA2016A
019aaa625
019aaa624
a. Lamps in series
b. Lamps in parallel
Fig 14. Lamp current sense for multiple lamps
3.3 e EOL: lamp end-of-life detection
The voltage on the EOL pin is fed to the internal window comparator. The window lower
limit equals the FBPFC voltage and the upper limit is equal to twice the FBPFC voltage.
Asymmetric aging effects of the lamp (IEC rectifying and asymmetric pulse) can be
sensed by sensing the voltage on DC blocking capacitor C12. The sensitivity and DC shift
can be adjusted independently due to the internal current source Ibias(EOL) (see Figure 15).
DIEC
DIEC
RIEC
RIEC
Ilamp
C12
VBUS
VC12
Ilamp
C12
0V
019aaa628
a. Lamp end-of-life IEC test circuit (the diode can be
connected in either polarity)
RIEC
019aaa629
b. Relationship between DC blocking capacitor
voltage and asymmetric power consumption
Fig 15. Asymmetrical lamp end-of-life IEC test circuit and DC blocking voltage
The power dissipated in the test resistor RIEC must be below the IEC requirement of
PEOL(max) = 7.5 W for T5 and PEOL(max) = 5.0 W for T4 lamps. Practical measurement
determines RIEC: RIEC is increased until the maximum power is reached.
Equation 14 calculates the voltage on C12.
VBUS P eol
V C12 = ---------------  -----------I lamp
2
(14)
The voltage on C12 shifts as a function of the power dissipated in RIEC.
The maximum EOL power PEOL(max) is an IEC requirement. PEOL(max) for T5 is 7.5 W and
for T4 it is 5 W. Currently there are no IEC requirements for T8 lamps. The voltage shift of
the DC blocking capacitor due to asymmetrical aging can fit into the IC end-of-life window
by the application resistor divider. The resistor divider consists of REOL1 (R6 and R7 in
Figure 3 on page 6) and REOL2.
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Fluorescent lamp driver with PFC using the UBA2015/16 family
Ilamp
FBPFC
VCdc
REOL1
EOL
1
C12
REOL2
HALF-BRIDGE
CONTROLLER
16.2 μA
2×
R20
R33
R22
IFB
C29
UBA2016A
019aaa630
a. Fixed output and dimming down to 10 %
Ilamp
VCdc
REOL1
EOL
D9
R17
C25
C12
R21
R23
C13
R33
R20
R22
R18
R19
D10
IFB
C29
UBA2016A
019aaa631
b. Deep dimming <10 %
Fig 16. The EOL pin application with DC blocking capacitor C12 sensing
In deep dimming application, the voltage on the DC blocking capacitor shifts if a DC
current through the lamp is used for canceling striation. A compensation circuit (D9, R23,
C13, R21) shown in Figure 16b can be used when VC12 rises when dimming is below
10 % of the nominal lamp current.
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3.3.1 Calculation of the resistor divider REOL1 and REOL2
See Figure 16a.
The voltage at the EOL pin is shown in Equation 15.
V C12  R EOL2 – I bias  EOL   R EOL1  R EOL2
V EOL = ---------------------------------------------------------------------------------------------------------R EOL1 + R EOL2
(15)
Where Ibias(EOL) = 16.2 A.
The EOL window threshold voltages are: Vth(low)(EOL) = 1  VFBPFC, Vth(high)(EOL) = 2 
VFBPFC. Under normal operation, the VFBPFC voltage is 1.27 V as shown in Equation 16.
V EOL  window   range  =  V th  high   EOL  – V th  low   EOL   = V FBPFC = 1.27 V
(16)
Equation 17 calculates the EOL window center voltage.
V th  high   EOL  + V th  low   EOL 
V EOL  window   center  = ----------------------------------------------------------------------- = 1.91 V
2
(17)
Equation 18 calculates the required ratio between REOL1 and REOL2.
R EOL1
2  P EOL – V EOL  window   range   I lamp
--------------- = ---------------------------------------------------------------------------------------------R EOL2
V EOL  window   range   I lamp
(18)
Where PEOL is the maximum power dissipated asymmetrically.
The absolute values for REOL1 and REOL2 center the voltage in the EOL window,
calculated with Equation 19 and Equation 20.
V EOL  window   range   I lamp  VBUS
R EOL1 = -----------------------------------------------------------------------------------------------2 – 2  V EOL  window   center 
-----------------------------------------------------------------------------------------------V EOL  window   range   I lamp  I bias  EOL 
(19)
V EOL  window   range   I lamp  VBUS
R EOL2 = ----------------------------------------------------------------------------------------------------------------------------2 – 2  V EOL  window   center 
----------------------------------------------------------------------------------------------------------------------------V EOL  window   range   I lamp – 2  P EOL  I bias  EOL 
Table 5.
AN10958
Application note
(20)
Calculated values for REOL1 and REOL2 for the EOL pin application
Lamp
VBUS (V) PEOL (W)
Ilamp (mA)
REOL1 (M)
REOL2 (k)
T5HE14W; T5HE21W;
T5HE28W; T5HE35W
432
170
7.99
176
T5HO24W
300
10.4
411
T5HO39W
340
10.7
485
T5HO49W
260
9.90
338
T5HO54W
460
11.5
711
T5HO80W
555
11.8
896
7.5
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Use 1 % resistors such as the MRS type from Vishay BC Components for the EOL divider.
The PFC output voltage must have 1 % accuracy because the voltage on the DC blocking
capacitor is 0.5 times the bus voltage.
3.4 VFB pin: lamp voltage feedback, overvoltage detection, open/short
protection
The advantage of lamp voltage feedback is that it limits voltage stress on the half-bridge
components such as NMOST, inductor and capacitors. The lamp voltage feedback signal
can be derived from the LC tank voltage. The dedicated voltage feedback pin is
advantageous in multilamp applications because the IC regulates on the maximum
voltage of both lamps.
When a lamp is removed or breaks in burn state, an immediate shutdown is activated
when the shutdown threshold Vth(ovextra)(VFB) = 3.35 V is reached. As a result, the
excessive voltage is only briefly on the half-bridge resonant node.
3.4.1 Lamp voltage regulation
In preheat state and ignition state, when the VFB voltage is > Vth(ov)(VFB) = 2.5 V, the
switching frequency is increased (lowering the voltage on the resonant tank) and the fault
timer starts. This feature protects the ballast under no lamp conditions. The IC tries again
to ignite the lamp. If after the second time the lamp still does not ignite, the IC enters the
standby state.
3.4.2 Overvoltage protection
In any state, when the VFB voltage is > Vth(ovextra)(VFB) = 3.35 V, the controller enters Stop
state immediately. This mechanism prevents excessive component stress when the lamp
is removed while the actual switching frequency is below the unloaded resonant
frequency.
3.4.3 EOL protection symmetrical lamp aging
Fluorescent lamps age over time and as a result the lamp voltage can increase. The VFB
voltage is compared with threshold Vth(oveol)(VFB). When the threshold is exceeded, the
slow fault timer is started. When designing the VFB circuit, remain below the minimum
Vth(oveol)(VFB) value to ensure that the protection is not triggered.
A dimmed lamp has a higher lamp voltage than nominal. However, the higher lamp
voltage caused by dimming must not trigger the symmetrical EOL protection. Therefore,
the threshold for symmetrical EOL detection increases when the DIM pin voltage is
lowered. The relation between Vth(oveol)(VFB) and VDIM is shown in Figure 17.
When VDIM < 250 mV the symmetrical EOL protection is disabled.
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Fluorescent lamp driver with PFC using the UBA2015/16 family
aaa-001846
1.6
Vth(oveol)(VFB)
1.2
(1)
0.8
(2)
(3)
0.4
0
0
0.5
1.0
1.5
VDIM
(1) Maximum value.
(2) Typical value.
(3) Minimum value.
Fig 17. Vth(oveol)(VFB) as a function of VDIM
3.4.4 Open/short-circuit protection
When the VFB voltage is < Vth(osp)(VFB) = 80 mV, the switching frequency is increased and
the fault timer is started. Ibias(VFB) pulls down the VFB pin when the pin is open.
3.4.5 Circuit diagrams for one and two LC tanks
3.4.5.1
Series resonant VFB circuit
Refer to Figure 18. HV capacitor C7 senses the lamp voltage on the resonant node of the
LC tank. The current through the HV capacitor C7 is fed through the capacitor C8 and the
voltage is divided. The diode clamps the voltage to 600 mV. A 2nd divider made up with
resistors R10 and R11 divide the voltage to the appropriate level at the VFB pin. The
capacitor C31 at the VFB pin lowers the ripple on the VFB voltage.
Do not make C31 too large or else the response time on overvoltage
(Vth(ovextra)(VFB) = 3.35 V) is slow. Rbias is used to lift the VFB voltage slightly > Vth(OSP)(VFB)
to enable start-up.
Typical values for a the VFB pin application are:
R10 = 100 k, R11 = 5.6 k, C7 = 100 pF, C8 = 1.5 nF, C31 = 10 nF and D8 = BAS101S.
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Fluorescent lamp driver with PFC using the UBA2015/16 family
VBUS
Cres
Lres
Cdc
Rbias
C7
3.35 V
R10
VFB
HALF-BRIDGE
CONTROLLER
2.5 V
R13//R14
D8
C8
R11
C31
80 mV
2.6 μA
UBA2016A
019aaa635
Fig 18. Typical VFB pin circuit for series resonant topologies
3.4.5.2
Inductive heating VFB circuit
In indicative heating topologies, the VFB circuit (with two LC tanks) shown in Figure 19
can be used. The resonance capacitors sense the lamp voltage and no additional HV
capacitor is needed. The capacitor C2 in Figure 19 divides the lamp voltage to a lower
level. R2 and R3 divided it to a lower level and provide an RC filter with capacitor C3.
Cs
Cs
Lr1b
Cdc
Lr2b
Lr2a
Lr1a
Cr1
Cr2
Lr1c
Lr2c
Cs
Cs
R1
R2
VFB
UBA2015/6
C2
D1
R3
C3
aaa-001847
Fig 19. Typical VFB pin application for a topology with two LC tanks and lamp to ground
configuration
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Functionality of the VFB circuit components:
•
•
•
•
•
•
3.4.5.3
R1: offset for open/short protection
Cr1/Cr2: resonance capacitors
C2: capacitive divider capacitor
D1: diode clamp to ground
R2/R3: resistor divider and discharge time of capacitor C2
C3: Filter capacitor
Constraints of the VFB circuit
Start-up (and all other states): The voltage must be higher than 120 mV to satisfy the
open/short protection. Set the voltage using resistor R1.
Ignition: The maximum voltage on the resonant tank (lamp voltage) is regulated to 2.5 V
on the VFB pin.
Normal operation: The voltage on the VFB must remain under 800 mV to satisfy the
symmetrical EOL protection.
Table 6.
VFB conditions
Operating state
VFB > 120 mV
(Vth(osp)(VFB)max)
VFB = 2.5 V
(Vth(ov)(VFB)typ)
VFB < 800 mV
(Vth(oveol)(VFB)min)
start-up
yes
yes
-
preheat
yes
yes
-
ignition
yes
yes
-
nominal
yes
yes
yes
When a large value capacitor for C2 is chosen, it is possible to make a DC shift with the
clamping diode. The DC shift can help to find better matching of the voltage levels during
ignition and operation.
3.4.5.4
Dimming constraints
Make sure that the VFB voltage remains under the overvoltage EOL threshold
Vth(oveol)(VFB) under all conditions. The Vth(oveol)(VFB) depends on the DIM pin voltage level
as shown in Section 3.4.3.
3.4.5.5
Circuit definition and verification
Starting point for the circuit design is that the divider capacitor C2 which must be at least
10x bigger than the Cr1 (+Cr2 if any). To minimize the costs of capacitor C2, keep the
voltage < 100 V across the diode.
To verify the solution by simulation, the circuit shown in Figure 20 can be used.
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Fluorescent lamp driver with PFC using the UBA2015/16 family
R1
V2
Vbus/2
Cr1
Cr2
R2
V1
FREQ = 50 kΩ
VAMPL = 1000 V
C2
D1
VFB
R3
C3
I1
DC = 2.6 u
aaa-001848
Fig 20. Typical simulation configuration
In Figure 20, VAMPL is the LC tank voltage. Check the Ignition state and operating states.
During dimming, the lamp voltage increases while dimming and whether the VFB voltage
remains under the dynamic Vth(oveol)(VFB) threshold.
Cr2 is the resonant capacitor of the 2nd resonant tank; it can be omitted when verifying
one LC tank circuits.
3.4.5.6
Calculation of the VFB pin components
Equation 21 calculates the value of C8. The value of C7 is fixed C7 = 100 pF.
1 – m arg in

1 – V R  -------------------------------------------
2  V max – VBUS

C8 =  C7  -----------------------------------------------------------------  2  V max – VBUS
V R   1 – m arg in 




(21)
The time constant = C8  (R10 + R11) determines the value of R10.
Where margin = 0.3 and is a constant. Vmax is the worst case ignition voltage. VR is the
maximum reverse voltage of the clamp diode. A diode with a VR of 300 V or higher
requires sufficient voltage at start-up to satisfy Vth(osp)(VFB). Equation 22 calculates the
value of R11.
V reg
C7 + C8
R11 = 2  R10  -------------------------------------------------------------  ---------------------------------------------------------------------------------------------------------------- (22)
 2  V max – VBUS   C7
V reg
1 – 2  -------------------------------------------------------------   C7 + C8 
 2  V max – VBUS   C7
Capacitor C31 filters noise on the VFB PCB track. C31 must not be too high to enable the
IC to react quickly on lamp removal when the switching frequency is near the resonant
frequency of the LC tank. A time-constant of 100 ns is advised. The value of C31 is
C21  R11 = 100 ns .
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3.5 IREF pin: IC reference current
A 33 k resistor (R34) connects the IREF pin to ground reference.
3.6 CIFB pin: input for the internal VCO, time-constant of the lamp
current control loop, ignition frequency ramp-down speed after
preheat
3.6.1 VCO input
When the CIFB pin is 0 V, the half-bridge switching frequency is at fhigh.
When CIFB is at Vhigh(CIFB) = 3.0 V, the half-bridge switching frequency is at flow.
3.6.2 Lamp current control
The average voltage on the IFB pin controls the half-bridge frequency. If the IFB pin is not
used, the switching frequency in Burn state is flow.
Since the CIFB pin is the output of the error amplifier, the capacitance on the CIFB pin
determines the speed/frequency response of the control loop.
VBOOST
VDIM
VCIFB
VBUS
freq
+
0 V to
1.27 V
-
error amp
G1(s)
VCO
G2
power stage LC tank + lamp
G3
G4(s)
Ilamp
feedback
H
019aaa636
Fig 21. Small signal block diagram of the lamp current control loop
Figure 22a shows the transfer of the error amplifier with the CIFB compensation network.
This transfer is equal to G1(s) in Figure 21.
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Fluorescent lamp driver with PFC using the UBA2015/16 family
019aaa638
1
G
(%)
10−1
VCO
(1)
10−2
UBA2016A
(2)
CIFB
C21
C26
10−3
102
R35
103
104
f (Hz)
019aaa637
a. The CIFB pin application
b. Small signal transfer (gain versus frequency)
(1) C26, C21 and R35.
(2) C26 (C21 and R35 not mounted).
Fig 22. Frequency response of error amplifier plus CIFB network
Typical values for the CIFB network are:
Non-dimmable ballasts: C26 = 100 nF; C21 = reserved; R35 = reserved;
Dimmable ballasts: C26 = 3.3 nF; C21 = 100 nF; R35 = 1 k.
During deep dimming, the lamp discharge column is close to extinguishing and the
time-constant of the lamp is small. The control loop has to be fast enough to prevent the
lamp from extinguishing. Therefore, for a dimmable ballast, add C21 and R35 to increase
the gain and speed of the control loop.
3.7 CF pin: timing capacitor of oscillator
The oscillator frequency is twice the operating frequency of the half-bridge. To guarantee
a 50 % duty cycle, the half-bridge operates at half the oscillator frequency. Capacitor C27
sets the frequency range of the half-bridge controller in the internal relaxation oscillator.
Equation 23 calculates the value of C27.
I cf
C27 = --------------------------------------2  f low  V th  cf 
(23)
Where Icf = 43 A; Vth(cf) = 2.5 V.
The maximum switching frequency (fhigh) is a fixed ratio: f high = f low  2.4 .
A typical value for C27 is 220 pF, results in an flow of 39 kHz and hence an fhigh of 94 kHz;
see Figure 23.
If C27 is a ceramic capacitor, use an NP0 or C0G dielectric, for high accuracy and
temperature independency. Without lamp current control, use an accurate capacitor to
obtain an accurate switching frequency.
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Fluorescent lamp driver with PFC using the UBA2015/16 family
VCF
fosc = 2 × fop = 2 × fhigh
fop < fhigh
2.5 V
t
0.0 V
tph(start)
019aaa639
Fig 23. Voltage on the CF pin
A current source charges capacitor C27 until the threshold of 2.5 V is reached then C27 is
discharged during 300 ns. The IC regulates the amount of charge current and therefore
the switching frequency.
3.8 CPT pin: preheat timer, fault timer, open/short protection
The capacitor on the CPT pin sets the preheat and fault time duration. Equation 24
calculates the preheat time relation to CPT capacitor.
t ph
C30 = ---------------------------CPT cons tan t
(24)
Where CPTconstant = 10  106.
A typical value for C30 is 100 nF which gives a preheat time tto(ph) of 1 s.
When C30 is a ceramic capacitor, use an X7R dielectric. The X7R capacitance decreases
when a DC voltage is applied, therefore the voltage rating must be 50 V even though a
lower voltage is applied.
3.8.1 Preheat timer
The preheat timer counts 8 times to charge capacitor C30 to 3.7 V with a current of
2.7 A. The discharge current of 11 A is applied until the voltage on C30 reaches 1.0 V
(see Figure 24). The charge and discharge currents are unequal in the preheat state. The
preheat-time/fault time ratio can be programmed (between 3.35 and 10.1) using an
external resistor as described in the data sheet (Ref. 1).
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Fluorescent lamp driver with PFC using the UBA2015/16 family
VCPT
3.7 V
1V
0.7 V
t
0V
tph
019aaa640
Fig 24. Voltage on the CPT pin during preheat
3.8.1.1
Fault timer
The fault timer provides a delay between fault detection and shutdown. The fault time
duration is one fifth of the preheat time. The fault timer uses a charge and discharge time
of 23.5 A.
Since both timers use the same pin, the fault timer takes priority over the preheat timer.
The preheat timer restarts after a fault has cleared.
3.8.1.2
Open/short protection
When the CPT pin is < Vth(scp)(CPT) = 120 mV, the controller does not sweep the frequency
down to the preheat frequency but continues switching at fhigh. This protection prevents
endless preheating if a short or open circuit production fault occurs on this pin.
When the CPT pin is < Vth(scp)(CPT) while the IC is in any oscillating state, the controller
increases the switching frequency to fhigh with a time-constant of approximately 7 ms. The
CIFB pin can be shorted to ground in case a shorter time-constant is needed.
The open/short protection on the CPT pin allows an (optional) external protection circuit to
switch the operating frequency to fhigh. At fhigh the power in the LC tank is minimal and the
voltage stress on the half-bridge components is minimal.
3.9 DIM pin: reduces lamp current control set point, reduces the
lamp-on-detection threshold
3.9.1 Lamp current regulation
The controller regulates the frequency such that the average voltage on the IFB pin during
Burn state equals the DC voltage on the DIM pin.
The lamp current regulation level is equal to the voltage at the DIM pin. Internally the
maximum regulation level is clamped to Vreg(IFB) = 1.27 V. During the start-up cycle
(Preheat and Ignition state) the minimum regulation level is clamped to 500 mV. In Normal
state, use a minimum level of 150 mV for better accuracy and also to prevent detection of
false ignition (lamp-on detection) using the IFB pin.
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3.9.1.1
Lamp-on detection
The lamp-on detection limits the visible flash when the ballast is switched on while the
ballast control input is at a deep dim level. Section 3.2.1 describes how the DIM voltage is
used for the lamp-on detection.
3.9.1.2
Chapter 3.9.1.2 Symmetrical aging
Dimmable ballast only: the lamp voltage increases when the lamps are dimmed. The
symmetrical aging threshold Vth(oveol)(VFB) is increased as function of the DIM voltage to
avoid triggering the symmetrical aging function. In the burn state, the VFB pin senses the
symmetrical aging. Section 3.4.3 describes the relationship between the DIM voltage and
the symmetrical aging threshold.
VDD
0.5 V
start-up
HALF-BRIDGE
CONTROLLER
1.27 V
Ilamp
LOD
26 μA
IFB
DIM
VCO
RDIM
C28
doublesided
rectifier
RIFB
UBA2016A
CIFB
RMDL
C21
C26
R35
019aaa641
Fig 25. The DIM pin application
The DIM pin requires a capacitor C28 of 10 nF to ground. The internal current source
Ibias(DIM) charges C28 to the maximum voltage (see Figure 25).
If dimming is required, decreasing voltage on the DIM pin reduces the lamp current. A
resistor or a voltage source that can sink at least 25 A of current is sufficient.
RDIM in Figure 25 is used to set the voltage, RMDL is used to set an accurate minimum dim
level.
3.10 BOOST pin: increase lamp current control set point
The UBA2016A has a boost function that is intended to shorten the run-up time of the
lamp. Boosting is useful for amalgam lamps or outdoor applications (see Figure 26).
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Fluorescent lamp driver with PFC using the UBA2015/16 family
019aaa644
Fig 26. Boost function of the lamp current at start-up
The lamp current is increased as a function of the current that flows into the BOOST pin.
Figure 27b shows the RMS lamp current versus the BOOST pin current; in this case a
non-linear lamp current sense circuit Figure 12b is used.
During the boost time, the minimum operating frequency flow is reduced to 50 %. The
BOOST pin current increases the light output that is more than nominal. Control using the
DIM pin does not reduce the minimum operating frequency.
When not needed, connect the BOOST pin to ground. Consider using the UBA2015 which
has a fixed frequency preheat function instead of the boost function.
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Fluorescent lamp driver with PFC using the UBA2015/16 family
VBUS
UBA2016A
R26
C16
R28
R25
D12
R27
BOOST
C18
1.4 V
Iinternal
019aaa642
a. The BOOST pin components
019aaa643
220
Ilamp(rms)
(%)
180
140
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
IBOOST (μA)
b. The BOOST pin current as a function of lamp current
Fig 27. BOOST application
Refer to Figure 27a. Typical values for the boost network are:
R25 = 10 k; R26 = 2.2 M; R27 = 470 k; R28 = 47 k; C16 = 10 F; C18 = 10 nF;
D12 = PMBD914.
The boost time is equal to the discharge time of capacitor C16 minus the preheat time;
R27 is in the circuit to discharge C16 completely. C18 makes the input less sensitive to
noise.
The boost voltage must not exceed the limiting value of +2.5 V:
Calculate R26, R28.
The BOOST pin current must not exceed 100 A when D12 is in forward mode:
Calculate R25: 10 k is sufficient in most cases.
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The half-bridge circuit must support the boost function. Therefore the following two rules
apply:
V BUS  8  f bst  L res  SQRT  3 
(25)
1
f low  bst   ----------------------------------------------------------pi  SQRT  L res  Cdc
(26)
The first rule (Equation 25) ensures that the lamp current can be reached. The second
rule (Equation 26) ensures that the half-bridge switching node is not operated in
capacitive mode.
3.11 PH/EN: fixed frequency preheat, enable/disable, burn state indication
output
A resistor from the PH/EN pin to ground (UBA2015 sets the frequency during preheat.
The preheat frequency is shown as a function of RPH/EN for CF = 180 pF, 200 pF and
220 pF.
019aac302
104
fsw(ph)
(kHz)
88
(1)
(2)
(3)
72
56
40
35
105
175
245
315
385
RPH/EN (kΩ)
(1) CF = 180 pF.
(2) CF = 200 pF.
(3) CF = 220 pF.
Fig 28. Preheat frequency as a function of RPH/EN
The controller can be disabled by pulling the PH/EN pin < 250 mV with a transistor. The
sink current must be at least IO(clamp)max(PH/EN) = 160 A. The enable/disable feature is
useful for power management or additional protection that needs a fast shutdown.
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Fluorescent lamp driver with PFC using the UBA2015/16 family
250 mV
FIXED
FREQUENCY
PREHEAT
PH/EN
QPH/EN
TTL
CONTROLLER
VCO
RPH/EN
10 kΩ
UBA2015/UBA2015A
019aab531
Fig 29. The PH/EN pin application example with enable/disable transistor
The PH/EN pin indicates when the burn state is entered. This function can be used to
operate a switch in the half-bridge circuit to change the LC tank between preheat and burn
state.
In preheat and ignition state the output voltage is 1.84 V. In burn state the output voltage is
1.27 V.
3.12 FBPFC pin: PFC voltage feedback, overvoltage protection,
overcurrent protection, open/short-circuit protection
The brownout functionality is assigned to the COMPPFC pin (see Section 3.13).
3.12.1 PFC voltage feedback
The PFC controller is always active when the half-bridge is active. The half-bridge
switching frequency is kept at fhigh(HB) until the voltage on the FBPFC pin is
> Vth(VPFCok)(FBPFC) = 1.0 V.
The voltage on the FBPFC pin connects to the error amplifier of the PFC control loop. The
FBPFC pin is connected to the PFC output voltage VBUS and it is compared with an
internal voltage of Vreg(FBPFC) = 1.27 V.
3.12.1.1
Overvoltage protection
The FBPFC voltage is compared with an internal voltage of Vth(ov)(FBPFC) = 1.39 V,
internally, leading edge blanking is applied at the rise of GPFC. If VFBPFC > 1.39 V then,
GPFC is immediately set to LOW and kept LOW while VFBPFC is > 1.39 V.
3.12.1.2
Overcurrent protection
The PFC current sense is connected to the FBPFC pin using a diode to prevent damage
to the PFC NMOST when coil saturation/overcurrent occurs.
The negative temperature coefficient of the diode forward voltage (almost) compensates
for the maximum flux density (Bmax) of the PFC inductor. Typically a diode such as
PMBD914 or 1N4148 is preferred. Do not use a Schottky diode because of its high
leakage current properties.
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3.12.1.3
Open/Short Protection (OSP)
When the FBPFC pin voltage is < Vth(osp)(FBPFC) = 250 mV, the PFC gate drive is disabled.
The internal bias current sink of Ibias(FBPFC) = 5 A ensures that VFBPFC is LOW when the
pin is left open.
D3
OV
D4
VAC
T1
1.39 V
VBUS
OK
R1
C3
C2
1.0 V
R2
PFC
CONTROLLER
OSP
0.25 V
Q1
R4
D7
R6
R7
1.27 V
FBPFC
R8
PWM
5 μA
C6
UBA2016A
COMPPFC
C17
C19
R29
019aaa645
Fig 30. The FBPFC pin and COMPPFC pin application
Typical values for the pin applications: C6 = 47 pF; R8 = 3.3 k.
There is a leading-edge blanking of tleb(FBPFC) = 330 ns on the FBPFC pin.
t leb = C6  R8  330 ns .
To prevent noise being injected into the feedback loop, ensure R8 ≤ 3.3 k.
Calculate the sum of R1, R2, and R4 for the correct output voltage using Equation 27:
 V BUS – V reg  FBPFC  
 R1 + R2 + R4  = R8  ----------------------------------------------------------------------------------- V reg  FBPFC  + I bias  FBPFC   R8 
(27)
Use the same type of 1 % resistors for R1, R2, R4 and R8 for an accurate bus voltage and
accurate voltage on the DC blocking capacitor. The voltage of the DC blocking capacitor is
used for lamp end-of-life detection.
Calculate the value of R6 and R7 in parallel for the correct PFC overcurrent protection
using Equation 28.
1.27 + 0.6
R  6//7  = -------------------------------------I PFC  peak   1.1
3.12.1.4
(28)
Layout rules
Place capacitor C6 close to transistor Q1 to keep the switching noise local to Q1.
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3.13 COMPPFC pin: PFC voltage control loop compensation network,
input of on-time modulator
A COMPPFC pin application is shown in Figure 30. The typical values are:
C19 = 100 nF; C17 = 470 nF; R29 = 82 k.
3.13.1 Compensation network
The compensation network has a unity gain in the PFC control loop at 20 Hz. It is a
trade-off between Power Factor and transient behavior. A lower bandwidth leads to a
better Power Factor but the transient behavior is less. A higher bandwidth leads to a
better transient behavior but the Power Factor is less.
The components C17 and R29 are added to have maximum phase margin at the unity
gain frequency.
3.13.1.1
On-time modulator input
The voltage on the COMPPFC pin determines the on-time of the PFC gate drive signal. A
low voltage results in a low on-time, a high voltage (equal to Vhigh(COMPPFC) = 3.0 V)
results in a maximum on-time of 28 s.
3.13.1.2
Brownout undervoltage
If a brownout or undervoltage occurs, the COMPPFC voltage increases and therefore also
the on-time. However, when the COMPPFC voltage reaches 3.0 V the on-time does not
increase. Furthermore, a signal is sent to the lamp controller to reduce the lamp power by
increasing the half-bridge switching frequency. Avoid the 3 V limit during the preheat and
ignition states because the controller increases the half-bridge switching frequency.
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3.14 AUXPFC pin: demagnetization detection, THD waveshaper, open pin
protection
D3
D4
VAC
T1
VBUS
C3
C2
Q1
VDD
5 μA
R3
AUXPFC
0.1 V
PFC
CONTROLLER
UBA2016A
D11
C14
COMPPFC
C17
R5
R24
C15
C19
R29
019aaa646
Fig 31. Basic circuit diagram of the AUXPFC pin
Typical values of the application shown in Figure 31:
R3 = 10 k; R5 = reserved; R24 = 10 k; D11 = PMBD914; C15 = 100 nF; C14 = 4.7 nF.
3.14.1 PFC auxiliary winding
Add a 10 k series resistor (R3) to AUXPFC to protect the IC against a too high voltage,
for example during lightning surge events.
The number of turns of the auxiliary winding on the PFC coil and the maximum voltage
across the PFC inductor can be calculated.
The PFC output voltage at overvoltage protection VBUS(ov) determines the maximum
voltage across the PFC primary winding as shown in Equation 29.
VBUS  V th  ov   FBPFC 
VBUS  ov  = -------------------------------------------------------- = VBUS  1.1
V th  reg   FBPFC 
(29)
It is important to maintain demagnetization detection even at low ringing amplitudes. The
voltage at the AUXPFC pin to 8.1 V (absolute maximum rating minus 10 %).
Ns  VBUS  ov 
Ns  VBUS  ov 
Np = -----------------------------------------------= -----------------------------------V AUXPFC  max   0.9
0.81
(30)
A resistor divider is placed when the number of auxiliary turns are too high.
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3.14.1.1
THD wave shaper circuit
To reach a THD performance better than 25 % THD, the on-time of the PFC is modulated.
With the waveshaper circuit, a THD < 8 % can be reached over a large input voltage
range. The modulation increases the on-time when the absolute mains voltage
decreases. The AUXPFC signal can be used as a signal source. After peak rectifying and
filtering, the signal is injected into the COMPPFC pin capacitor.
A short description of the THD waveshaper circuit:
• D11 rectifies the negative peak of the VAUXPFC;
• R24 and C15 buffer the rectified signal with the correct time-constant
• C14 injects the compensation current into the COMPPFC pin. The capacitance
determines the amount of compensation
The time-constant of R24 and C15 is R24  C15  1 ms .
Determine the best value for C14 by measurement.
3.15 GPFC pin: PFC gate driver
Place a series resistor in track to the gate of the MOSFET. A typical value for this resistor
is 22 .
The strong switch-off capability ensures that the external MOSFETs are not switched on
due to the current through the gate-drain capacitance of the external MOSFET.
VDD
ISOURCE
RG
LS
GPFC
VDRV
CGS
CISS
ISINK
UBA2016A
019aaa647
a. Sink and source currents
019aaa648
b. Gate drive resonant components
Fig 32. PFC and half-bridge MOSFET driver diagram
The IC MOSFET drivers capability is specified at the most interesting area (where the
external MOSFETs are in the linear region).
ISOURCE = 90 mA at VGS = 4 V
RSINK = 16  at VGS = 2 V
The sink resistance of 16  is useful for damping the oscillation that can occur at the
NMOST gate when the NMOST is switched off. In Figure 32b, LS is the total inductance
(track and source), CISS is the input capacitance of the NMOST as specified in the
NMOST data sheet and RG is the total series resistance (of the driver and of the NMOST).
Damping factor ξ of this series RGLSCISS circuit is shown in Equation 31.
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C ISS
SQRT   ----------
 LS 
 = R G  -------------------------------------2
(31)
ξ must be greater than 0.5 (ideally >1) for sufficient damping.
3.15.1 VDD supply load
The major part of the power consumption from supply VDD is the gate drive. The amount
of energy needed is linear to the switching frequency. Equation 32 the relationship
between gate-charge and PFC switching and VDD supply current.
I VDD  PFC  = Q g  PFC   f PFC
(32)
Where Qg(PFC) is the total gate charge as specified in the NMOST data sheet.
There is also gate charge needed for the two half-bridge NMOSTs which are not
synchronized to PFC switching.
The GPFC track contains large current spikes; ensure that next to the GPFC track a
low-ohmic return ground is present in the layout. The track width determines the
inductance per cm, therefore use wide tracks for gate drive signals in case large NMOSTs
are used. The ground track next to the signal track also reduces the inductance per cm.
3.16 GND pin: IC ground reference
The GND pin is the reference ground for the IC. Isolate the small signal ground and the
large signal (gate drive currents, half-bridge switching currents and PFC switching
currents) in the PCB layout.
3.17 VDD pin: IC supply and gate-drive supply
The application diagram for the VDD pin is shown in Figure 34.
Refer to Figure 33. At power-on, the VDD supply determines when the IC starts
oscillating. Initially, the start-up current is charging the VDD capacitor. The VDD voltage
rises and passes the threshold Vrst(VDD) = 4.2 V. When the reset level is passed, the gate
drive of the low side switch is equal to VDD. This voltage charges the floating supply
capacitor via the internal bootstrap diode.
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1
2
3
8
CPT
0V
VVDD
GLHB
0V
OFF
RESET
SUPPLY LOW
PREHEAT
IGNITION
BURN
Vclamp
Vstartup
state
VVDD
Vstop
Vrestart
Vrst
0V
t0
t1
t2
t3
t4
t5
time
019aaa649
(1) Time t0: start charging VDD capacitor.
(2) Time t3: start oscillation, VDD takeover supply active.
(3) Time t4: preheat timer end.
(4) Time t5: lamp-on detected, transition to burn state.
Fig 33. Normal start-up behavior
At the moment VVDD passes the threshold Vstartup(VDD) = 12.4 V, the gate drivers become
active and Preheat state is entered. In Preheat state, capacitor C20 in the VDD takeover
supply must deliver the energy to the IC and gate drivers.
Capacitor C20 is part of the dV/dt supply that connects to the half-bridge switching node
SHHB. On each rising edge of the SHHB node a current is fed through C20 and diode
D13b to the buffer capacitor C23. C20 determines the amount of current.
When C20 has a high value (> 470 pF), replace D13a by a 14 V Zener diode (1N5244) to
keep within the VDD pin voltage limits.
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PFC driver
IDRIVE(PFC)
UBA2016A
Q1
GPFC
VBUS
FSHB
Istartup
GHHB
D13
C20
VDD
SHHB
Q2
SHHB
b
C22
C24
IDRIVE(HB)
a
Irestart(VDD)
C23
IVDD
GLHB
Iclamp(VDD)
13.4 V
SHHB
Q3
OTHER
CIRCUITS
019aaa650
Fig 34. The VDD pin application
The VDD current consumption depends on the state of the IC.
• Stop (standby), Reset and Supply LOW state: The current consumption is 240 Atyp.
• Preheat, Ignition and Burn state: Both PFC and HBC are switching. The MOSFET
drivers are dominant in current consumption. Initially the VDD current comes from the
VDD buffer capacitor C23 but the dV/dt supply circuit takes over. The current
consumption (excluding the MOSFET driver) is 1.7 mA (typ). For typical FETs in a
35 W application the VDD current is 10 mA.
• Auto-restart state: The current consumption is 1.1 mA (typ). This current overrules the
current Istartup and the VDD capacitor is discharged. This state is used for multiple
ignition attempts.
3.17.1 dV/dt capacitor
The VDD supply current is mostly determined by the NMOST types and internal drivers, a
small part (only 1.7 mA) is needed for internal circuitry.
Equation 33 calculates capacitor C20.
 2  Q g  HB  + Q g  PFC  + I VDD  f low  HB  
C20 = 1.3  --------------------------------------------------------------------------------------------------VBUS
(33)
Factor 1.3 is a margin; Qg(HB) and Qg(PFC) are the total gate charges of the HB and PFC
NMOST; VBUS is the bus voltage, IVDD = 1.7 mA and flow(HB) = 40 kHz or 20 kHz in case
of boost.
The calculated value is the minimum value for capacitor C20, a typical value is 330 pF.
The margin in the formula depends on the tolerances in the design. Take care not to
exceed maximum current Iclamp(VDD) = 25 mA of the internal clamp.
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3.17.1.1
Buffer capacitor
A buffer capacitor C23 is required at the VDD pin. Current peaks can be localized by
placing an SMD ceramic capacitor at position C23, close to the IC. The value of C23 is
approximately 100 times larger than the total gate capacitance of all MOSFETs to prevent
significant voltage drop during the discharge time of C23. Equation 34 calculates the
value of C23.
C23   100   2  C iss  HB  + C iss  PFC  
(34)
A typical capacitor for C23 is a 470 nF, 0805, 50 V, X7R ceramic type.
3.17.1.2
Start-up bleeder resistor
This resistor connects to the PFC output bus voltage or the Double-Sided Rectified (DSR)
mains. The bus capacitor holds the bus voltage and is only slowly discharged by the
bleeder resistor, so DSR mains connection is preferred. The DSR mains connection
results in a shorter off-time in a power-on-off-on cycle.
The start-up current must be sufficient to supply the Istandby(VDD) = 240 A. The start-up
current must be lower than Irestart(VDD)min = 850 A otherwise the IC cannot leave the
Auto-restart state. Equation 35 calculates the start-up current.
I startup = 1.2  I s tan dby  VDD 
(35)
The ballast mains start voltage Vac(start) must be < Vac(min) RMS as shown in Equation 36.
V ac  start  = 0.9  V ac  min 
(36)
The start-up bleeder resistor R31 determines the start-up current (Istartup).
SQRT  2   V ac  start 
R31 = --------------------------------------------------I startup
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3.18 GLHB pin: Low-side half-bridge gate-driver
The application for this pin is identical to the GPFC pin (see Section 3.15 on page 38).
The GLHB is 12 V in standby state to pre-charge the floating supply capacitor on the
FSHB pin. Note this when designing a ballast that must detect the hot-side filament of the
lamp.
Connect the gate of the lower half-bridge MOSFET to the GLHB pin using a small series
resistor to prevent oscillation caused by parasitics. Oscillations increase stress on the
MOSFETs. Do not use a too high resistor value to prevent switching the MOSFET on via
its Miller capacitance.
3.19 SHHB pin: hard switching, capacitive mode, ground of high-side
driver, source of the dV/dt supply
In normal operation, the half-bridge is Zero-Voltage-Switching (ZVS), which means that
the SHHB circuit node has commuted before the NMOST switches on. The SHHB node
capacitance is charged or discharged by the current of the half-bridge inductance; the
impedance of the half-bridge circuit is “inductive”. However, at low operating frequencies
(overpower) or sudden removal/damage of the load (lamp) the impedance of the
half-bridge circuit can become capacitive. Capacitive means that there is no commutation
current to charge and discharge de SHHB node.
3.19.1 Hard switching
ZVS is assumed if the voltage step on the SHHB node is below 30 V.
When the voltage step on the SHHB node is above 100 V then hard switching is
assumed.
3.19.2 Capacitive mode
Capacitive mode protection is triggered when the voltage rise during the non-overlap time
of the low-to-high transition of the SHHB node remains under Vth(cm)(SHHB) = 30 V/s.
If the slope of the voltage rise is > 30 V/s, then hard switching or ZVS can be assumed.
3.20 FSHB pin: supply for high-side driver
Connect the FSHB pin to the SHHB pin using capacitor C24. The capacitor must hold the
charge for the internal high-side driver. The supply structure is shown in Figure 34 on
page 41.
When SHHB is switched to GND current flows via the bootstrap internal diode and
high-voltage switch into C24. The high-side driver is supplied from this capacitor when
SHHB is above GND. The voltage drop across the internal diode and high-voltage switch
is VFd(bs) = 1.5 V.
A typical value for C24 is 100 nF which is sufficient for most applications.
3.21 GHHB pin: High-side half-bridge gate driver
The application for this pin is identical to the GPFC pin (see Section 3.15 on page 38).
Connect the gate of the higher half-bridge MOSFET to the GHHB pin use a small series
resistor to prevent oscillation caused by parasitics.
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4. Application description
4.1 Power supply
The power supply to the IC includes several functions:
•
•
•
•
Clamping by the internal clamping diode
Restart internal current source
Supply of the IC drivers function
Supply of the IC controller function blocks
4.1.1 IC supply structure overview
The VDD pin is the power supply pin. Internally the supply pin is clamped to 13.4 V by the
integrated clamp and excessive VDD current (Iclamp(VDD)) is removed. The 13.4 V is used
for the internal circuitry and for the integrated MOSFET drivers. An integrated bootstrap
diode supplies the GHHB driver.
The VDD pin connects to an external buffer capacitor which can be charged from one of
several sources:
•
•
•
•
Charge current Istartup from the bus voltage
A dV/dt supply connected to the half-bridge
Auxiliary supply from a winding on the half-bridge transformer
External DC supply from a standby supply
4.1.2 Start-up
It is possible to restart after a relamp action without a ballast power cycle of the ballast
when the start-up current is fed through the lamp filament at restart.
4.1.3 Restart
To provide multiple ignition attempts, the Auto-restart state is implemented. In the
auto-restart state, the IC is not oscillating and there is an extra current
(Irestart(VDD) = 1.1 mA) drawn from VDD. When Irestart(VDD) is larger than Istartup, a restart is
triggered when the VDD < Vrestart(VDD) = 6.2 V. The restart timing also depends on C23.
4.1.4 Stop
The IC stops operating when the VDD voltage < Vstop(VDD) to prevent unreliable switching
of the half-bridge and PFC circuit. The IC enters Supply-low state.
4.2 Choice of the VBUS voltage
In order for the PFC step-up converter to work correctly, the bus voltage must be higher
than the maximum input voltage.
V BUS  1.125  2  V ac  max 
(38)
At the lowest HB switching frequency the bus voltage must be sufficient to reach the
required lamp current with an HB inductance.
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V BUS  3  8  f hb  min   L hb  res   I lamp  max 
(39)
At the nominal HB switching frequency, the bus voltage must be sufficiently high to
support the required lamp voltage.
V lamp  nom   pi
V BUS  ------------------------------------2
(40)
Equation 38,Equation 39 and Equation 40 provide the minimum value requirements for
VBUS.
4.3 PFC stage design
The toff(low) parameter limits the maximum switching frequency fhigh(PFC). The minimum
switching frequency flow(PFC) is a design parameter. Keep flow(PFC) above the audible
range for humans and animals (30 kHz) during normal operation.
Normal operating voltage range: Vac(rms)(min) to Vac(rms)(max).
Nominal power: PF > 0.9 and flow(PFC) > 30 kHz.
The inductance LPFC can be calculated for a certain flow(PFC) as shown in Equation 41.
2
V ac  rms   max    VBUS – 2  V ac  rms   max  
L PFC = ---------------------------------------------------------------------------------------------------------------P lamp
2  f low  PFC   -------------  V BUS

(41)
Remark: If the boost function is used over the complete input voltage range, the Plamp
must be the maximum lamp power during boost.
Equation 42 shows the calculation of the maximum peak current Ipk(max)(PFC) of the PFC
inductor operating in critical conduction mode.
I pk  max   PFC 
P lamp
2  2  ------------
= -----------------------------------V ac  rms   min 
(42)
Application requirements: Efficiency  = 0.9; Plamp = 49 W; Vac(rms)(min) = 180 V to give:
I pk  max   PFC  = 856 mA
Valley-detection needs additional ringing time within every switching-cycle. The ringing
time adds short periods while no power is transferred to the PFC output. The PFC
controller compensates for the ringing with a slightly higher peak current. A rule of thumb
is that the peak current in a boundary condition mode, PFC with valley skipping is a
maximum of 10 % higher than the calculated peak current in boundary conduction mode
as shown in Equation 43.
I LPFC  sat  = 1.1  I pk  max   PFC 
(43)
The RMS current in the PFC inductor.
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P lamp
I LPFC  rms  = 2  ----------------------------------------------------------SQRT  3   V ac  min   
(44)
Once the inductance LPFC and saturation current Ipk(max)(PFC) are known, the PFC inductor
can be designed. The design requirements must include the following:
•
•
•
•
•
Inductance
Saturation current at maximum operating temperature
Maximum RMS current to determine the temperature increase
Switching node close to core for low EMI
Winding ratio primary: auxiliary
The winding ratio calculation is described in Section 3.14 on page 37 and shown as:
 Np    Ns  = 0.11  V BUS .
The low frequency output voltage peak-to-peak ripple:
P lamp
V BUS  pk – pk  = --------------------------------------------------------------2    f ac  V BUS  C BUS
(45)
Where VBUS(pk-pk) is chosen to be from 10 % to 15 % of VBUS.
Once the ripple currents are measured in the application for certain capacitor values, the
capacitor manufacturer can help support life-time calculations.
Suggested capacitor series for ballast applications are: Rubycon BX series, Nippon KXG
and Panasonic EB type A.
4.4 Half-bridge circuit
The basic half-bridge circuit consists of an LC tank. Before the lamp is ignited, the LC tank
is not damped and the voltage across the lamp strongly depends on the switching
frequency. Electrode heating is applied while the lamp voltage is below the ignition voltage
and the switching frequency is above the resonant frequency. After preheating, the lamp is
ignited by sweeping the switching frequency down towards the resonant frequency. After
ignition (Burn state), the lamp acts as a resistive load on the LC tank. The inductor limits
the current though the lamp.
There are several topologies for heating the lamp electrodes. The conventional and
inductive heating is addressed in the following sections.
4.4.1 Conventional heating
See Figure 35. In Preheat state, the half-bridge current flows through CDC, Cres and the
electrodes of the lamp (except a small amount which flows through C electrode). Once the
lamp is ignited, the half-bridge current also flows through the lamp and the resonant tank
(Lres Cres) is damped.
This type of circuit is used when lamp current control is not required. The half-bridge
controller controls the switching frequency.
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VBUS
Celectrode
GHHB
VDD
Lres
SHHB
Cres
8.5 μA
OCpreheat
480 mV
HALF-BRIDGE
CONTROLLER
GLHB
SLHB
Celectrode
saturation
2.5 V
RSLHB
Cdc
UBA2016A
019aaa656
Lres: limits the lamp current in normal operation.
Cres: generates the ignition voltage.
Celectrode: reduces the electrode current in nominal operation.
RSLHB: limits the half-bridge current during preheat and sets the saturation current.
Fig 35. The SLHB pin and conventional heating
4.4.2 Inductive mode heating
See Figure 36. In Preheat state, the half-bridge current flows through Lres and the
electrodes of the lamp (no current flows through CDC). Once the lamp is ignited, the
half-bridge current also flows through the lamp and the resonant tank (LresCres) is
damped. The current though the CDC capacitor is equal to the lamp current, as a result the
lamp current can easily be measured.
This type of circuit is used if lamp current control is required, such as dimming.
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VBUS
Lsec
Celectrode
Lsec
Celectrode
GHHB
VDD
Lres
SHHB
8.5 μA
OCpreheat
480 mV
GLHB
HALF-BRIDGE
CONTROLLER
SLHB
saturation
2.5 V
RSLHB
Cres
Cdc
UBA2016A
019aaa659
Lres: inductor coupled to Lsec, limits the lamp current in normal operation.
Cres: generates the ignition voltage.
Celectrode: reduces the electrode current in nominal operation.
Lsec: inductor coupled to Lres, determines the amount of electrode current.
RSLHB: limits the half-bridge current during preheat and sets the saturation current.
Fig 36. The SLHB pin and inductive heating
4.4.3 Half-bridge current control
Saturation regulation level is a fixed ratio (5) to the preheat regulation level. The
saturation level must support worst case (cold and old lamp) ignition voltages.
If the default application (factor 5) is selected, the preheat current through the half-bridge
is: Iworstcase(ignition) < 5  Iph; see Figure 37.
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coil
saturation
saturation
threshold
half-bridge current
factor 5
preheat
threshold
extended by
non-linear
SLHB pin
application
f
019aaa660
Fig 37. Relationship between coil saturation and preheat current
4.5 Layout guide
Figure 38 is an application example of a dual-layer PCB where the component-side layer
tracks are Gray and the soldering-side tracks are Red, Blue and Cyan. The Blue track is
the ground plane, a part of which is used as a small signal ground. This small signal
ground is highlighted in Cyan. This ground is used for the components listed after
Figure 38 to minimize the pickup of noise in case of deep dimming and ignition. Route the
IFB track next to a ground plane or track for this reason.
019aac303
Fig 38. Top view of dual-layer PCB for an application example using UBA2016A in an
SO20 package
A separate small signal ground is recommended for the following:
•
•
•
•
AN10958
Application note
Pin 2, IFB: C19
Pin 3, EOL: C21
Pin 4, VFB: C22
Pin 5, IREF: R21
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•
•
•
•
•
Pin 6, CIFB: R22, C24
Pin 7, CF: C25
Pin 8, CPT: C26
Pin 9, DIM: C30
Pin 10, BOOST, C30
Figure 39 is an example of an application of a single-layer PCB whose tracks are shown
Red, Blue and Cyan. The Blue track is the ground plane, a part of which is used as a small
signal ground. The small signal ground is highlighted in Cyan and is used for the following
components to minimize the pickup of noise in case of ignition. IFB is connected to ground
because the example is a non-dimmable application.
019aac304
Fig 39. Top view of a single-layer PCB for an application example using UBA2015 in a
DIP20 package
A separate small signal ground is recommended for:
•
•
•
•
•
•
•
•
•
AN10958
Application note
Pin 3, EOL: C15
Pin 4, VFB: C14
Pin 5, IREF: R10
Pin 6, CIFB: C17
Pin 7, CF: C13
Pin 8, CPT: C16
Pin 10, PH/EN, R11
Pin 15, GND
Pin 16, VDD: C7
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4.6 Tips and tricks
4.6.1 PFC disable
The PFC controller can be disabled using the options shown in Table 7.
Table 7.
PFC disable options
Shows the options for disabling the PFC controller for experimental purposes.
Pin connection
PFC mode PFC behavior
AUXPFC
COMPPFC
FBPFC
Open
FBPFC
COMPPFC
disabled
FBPFC regulates to approximate 1.1 V, disabled protection:
brownout, FBPFC, OSP, FBPFC, overvoltage, EOL window
changes because FBPFC voltage is lower
Open
GND
1.27 V
disabled
FBPFC must be set externally to 1.27 V from bus voltage for normal
EOL window, disabled protection: brownout, FBPFC, OSP, FBPFC,
overvoltage, EOL window does not change because FBPFC is set
to 1.27 V
If COMPFC and FBPFC are interconnected, then the FBPFC voltage regulates to 1.1 V.
As a result the EOL pin thresholds change, the EOL bias current is also slight different at
VEOL = 1.65 V. Table 8 the new values are shown.
Table 8.
EOL characteristics
Vfb(PFC) = 1.1 V
Symbol
Parameter
Conditions
Vth(low)EOL
low threshold voltage on pin EOL
Vth(high)EOL
high threshold voltage on pin EOL
Ibias(EOL)
bias current on pin EOL
Min
Typ
Max
Unit
1
1.1
1.2
V
2
VEOL = 1.65 V 15.4
2.25
2.5
V
16.2
17
A
As the FBPFC/COMPFC node has a high–impedance, it could pick up noise. Therefore it
connect a 10 nF to GND. A typical application is shown in Figure 40.
SLHB
SLHB
IFB
IFB
BOL
BOL
VFB
VFB
33 kΩ
IREF
150 nF
22 kΩ
200 pF
CF
68 nF
DIM
68 kΩ
CIFB
CPT
DIM
FFPRHT
20
1
2
19
3
18
17
4
16
5
UBA2015AT
6
15
7
14
8
13
9
12
10
11
22 Ω
GHHB
FSHB
GHHB
100 nF
SHHB
GLHB
SHHB
22 Ω
GLHB
VDD
VDD
GND
GPFC
AUXPFC
COMPFC
FBPFC
10 nF
aaa-001849
Fig 40. Typical PFC disabled application
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4.7 Power-on of new ballast design
4.7.1 Test 1: check for short-circuits
Apply voltage to the VDD pin via 330  resistor and 20 V laboratory supply.
Start-up the supply from 0 V and monitor the current and voltage on the VDD pin.
The VDD voltage clamps at about 13 V to 14 V. Do not increase VDD above 14 V or
permanent damage occurs.
4.7.2 Test 2: check if oscillation stage is reached
Switch VDD supply to 0 V.
Apply 1.27 V to the FBPFC pin to enable switching of the MOSFETs.
Increase VDD until clamping occurs, when using 330  in series, the laboratory supply
can be increased to less than 20 V while keeping the internal clamp within specification.
The gate drive signals (PFC and half-bridge) show some activity when the VDD passes
the start-up threshold.
4.7.3 Test 3: check half-bridge functionality
Switch VDD and FBPFC to 0 V.
Connect diode to the CPT pin and connect its cathode to ground, to disable the preheat
and fault timer.
Apply 1.27 V to the FBPFC pin and 12.9 V to the VDD pin.
Connect a 400 V laboratory supply to the bus capacitor and set the current limit to
200 mA.
Slowly increase the bus voltage from 0 V to between 20 V and 30 V, and monitor the
laboratory supply current. Monitor the bus voltage (PFC output voltage) and the source
high-side of the half-bridge. Monitor the voltage across the resonant capacitor: the
average voltage must be VBUS / 2.
4.7.4 Test 3: check half-bridge functionality
Remove VDD, FBPFC and bus laboratory supply.
Remove diode from the CPT pin.
Connect 400 V, DC laboratory supply to the AC input, and set the current limit to 200 mA.
Slowly increase the laboratory supply voltage from 0 V to between 20 V and 30 V, and
monitor the laboratory supply current and the VDD voltage.
Check if PFC starts regulating if the FBPFC voltage > 1.0 V.
4.7.5 VFB disable
Connect a laboratory supply of 500 mV to the VFB pin. Make sure that the lamps are
inserted because high voltage can occur in the LC tank.
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4.7.6 EOL disable
Connect a laboratory supply of 1.9 V to the EOL pin.
5. Abbreviations
Table 9.
Abbreviations
Acronym
Description
EMI
ElectroMagnetic Interference
MOSFET
Metal Oxide Semiconductor Field Effect Transistor
NMOST
N-channel Metal Oxide Semiconductor Transistor
SMD
Surface-Mounted Device
VCO
Voltage-Controlled Oscillator
6. References
AN10958
Application note
[1]
UBA2016A/15/15A - 600 V fluorescent lamp driver with PFC, linear dimming and
[2]
UM10359 - UBA2016AT demo board 1 × 28 W dim and boost user manual
[3]
UM10466 - UBA2015P reference design 2 × 35 W T5 non-dimmable 230 V(AC)
user manual.
[4]
UM10486 - UBA2015P reference design 2 × 35 W T5 non-dimmable 120 V (AC)
user manual.
[5]
UM10438 - UBA2015AP evaluation board 1 × 35 W T5 dimmable 120 V (AC) user
manual.
[6]
UM10440 - UBA2015AT reference design 2 × 35 W T5 dimmable 230 V (AC) user
manual.
[7]
UM10513 - UBA2015AT reference design 2 × 35 W T5 dimmable 120 V (AC) user
manual.
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7. Legal information
7.1
Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
7.2
Disclaimers
Limited warranty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Semiconductors takes no
responsibility for the content in this document if provided by an information
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequential damages (including - without limitation - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggregate and cumulative liability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconductors products in such equipment or
applications and therefore such inclusion and/or use is at the customer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and operation of their applications
and products using NXP Semiconductors products, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
AN10958
Application note
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suitable and fit for the customer’s applications and
products planned, as well as for the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
third party customer(s). Customer is responsible for doing all necessary
testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Evaluation products — This product is provided on an “as is” and “with all
faults” basis for evaluation purposes only. NXP Semiconductors, its affiliates
and their suppliers expressly disclaim all warranties, whether express, implied
or statutory, including but not limited to the implied warranties of
non-infringement, merchantability and fitness for a particular purpose. The
entire risk as to the quality, or arising out of the use or performance, of this
product remains with customer.
In no event shall NXP Semiconductors, its affiliates or their suppliers be liable
to customer for any special, indirect, consequential, punitive or incidental
damages (including without limitation damages for loss of business, business
interruption, loss of use, loss of data or information, and the like) arising out
the use of or inability to use the product, whether or not based on tort
(including negligence), strict liability, breach of contract, breach of warranty or
any other theory, even if advised of the possibility of such damages.
Notwithstanding any damages that customer might incur for any reason
whatsoever (including without limitation, all damages referenced above and
all direct or general damages), the entire liability of NXP Semiconductors, its
affiliates and their suppliers and customer’s exclusive remedy for all of the
foregoing shall be limited to actual damages incurred by customer based on
reasonable reliance up to the greater of the amount actually paid by customer
for the product or five dollars (US$5.00). The foregoing limitations, exclusions
and disclaimers shall apply to the maximum extent permitted by applicable
law, even if any remedy fails of its essential purpose.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
7.3
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 August 2012
© NXP B.V. 2012. All rights reserved.
54 of 56
AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
8. Contents
1
Introduction . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
1.1
General IC description . . . . . . . . . . . . . . . . . . . 3
1.2
Basic electronic ballast circuit. . . . . . . . . . . . . . 3
1.2.1
Power factor correction. . . . . . . . . . . . . . . . . . . 4
1.2.2
Inductive heating half-bridge and ballast . . . . . 4
1.2.3
IC family overview . . . . . . . . . . . . . . . . . . . . . . 5
1.2.3.1
Preheat operation . . . . . . . . . . . . . . . . . . . . . . . 5
1.2.3.2
Boost function . . . . . . . . . . . . . . . . . . . . . . . . . . 5
1.2.3.3
Dim function . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
2
Basic circuit description . . . . . . . . . . . . . . . . . . 5
3
Pin-to-pin component selection . . . . . . . . . . . 10
3.1
SLHB pin: preheat current regulation, coil
saturation protection . . . . . . . . . . . . . . . . . . . . 11
3.2
IFB pin: lamp current feedback, lamp-on
detection, internal lamp current rectifier,
overcurrent detection . . . . . . . . . . . . . . . . . . . 13
3.2.1
Lamp-on detection (LOD) . . . . . . . . . . . . . . . . 13
3.2.2
Lamp current feedback . . . . . . . . . . . . . . . . . . 14
3.2.3
Overcurrent lamp protection . . . . . . . . . . . . . . 14
3.2.3.1
Calculations for Figure 12a. . . . . . . . . . . . . . . 15
3.2.3.2
Calculations for Figure 12b. . . . . . . . . . . . . . . 16
3.2.3.3
Lamp at end-of-life and deep dimming
sense circuit . . . . . . . . . . . . . . . . . . . . . . . . . . 16
3.2.3.4
Multiple lamp current sense . . . . . . . . . . . . . . 17
3.3
e EOL: lamp end-of-life detection . . . . . . . . . . 18
3.3.1
Calculation of the resistor divider REOL1
and REOL2 . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
3.4
VFB pin: lamp voltage feedback, overvoltage
detection, open/short protection . . . . . . . . . . . 21
3.4.1
Lamp voltage regulation . . . . . . . . . . . . . . . . . 21
3.4.2
Overvoltage protection . . . . . . . . . . . . . . . . . . 21
3.4.3
EOL protection symmetrical lamp aging . . . . . 21
3.4.4
Open/short-circuit protection . . . . . . . . . . . . . 22
3.4.5
Circuit diagrams for one and two LC tanks. . . 22
3.4.5.1
Series resonant VFB circuit . . . . . . . . . . . . . . 22
3.4.5.2
Inductive heating VFB circuit . . . . . . . . . . . . . 23
3.4.5.3
Constraints of the VFB circuit . . . . . . . . . . . . . 24
3.4.5.4
Dimming constraints . . . . . . . . . . . . . . . . . . . . 24
3.4.5.5
Circuit definition and verification . . . . . . . . . . . 24
3.4.5.6
Calculation of the VFB pin components . . . . . 25
3.5
IREF pin: IC reference current . . . . . . . . . . . . 26
3.6
CIFB pin: input for the internal VCO,
time-constant of the lamp current
control loop, ignitionfrequency ramp-down
speed after preheat. . . . . . . . . . . . . . . . . . . . . 26
3.6.1
VCO input . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
3.6.2
Lamp current control. . . . . . . . . . . . . . . . . . . . 26
3.7
3.8
3.8.1
3.8.1.1
3.8.1.2
3.9
3.9.1
3.9.1.1
3.9.1.2
3.10
3.11
3.12
3.12.1
3.12.1.1
3.12.1.2
3.12.1.3
3.12.1.4
3.13
3.13.1
3.13.1.1
3.13.1.2
3.14
3.14.1
3.14.1.1
3.15
3.15.1
3.16
3.17
3.17.1
3.17.1.1
3.17.1.2
3.18
3.19
3.19.1
3.19.2
3.20
3.21
CF pin: timing capacitor of oscillator . . . . . . . 27
CPT pin: preheat timer, fault timer, open/short
protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . 28
Preheat timer . . . . . . . . . . . . . . . . . . . . . . . . . 28
Fault timer . . . . . . . . . . . . . . . . . . . . . . . . . . . 29
Open/short protection . . . . . . . . . . . . . . . . . . 29
DIM pin: reduces lamp current control set point,
reduces the lamp-on-detection threshold. . . . 29
Lamp current regulation . . . . . . . . . . . . . . . . . 29
Lamp-on detection . . . . . . . . . . . . . . . . . . . . . 30
Chapter 3.9.1.2 Symmetrical aging . . . . . . . . 30
BOOST pin: increase lamp current control
set point . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30
PH/EN: fixed frequency preheat, enable/disable,
burn state indication output . . . . . . . . . . . . . . 33
FBPFC pin: PFC voltage feedback, overvoltage
protection, overcurrent protection,
open/short-circuit protection. . . . . . . . . . . . . . 34
PFC voltage feedback . . . . . . . . . . . . . . . . . . 34
Overvoltage protection . . . . . . . . . . . . . . . . . . 34
Overcurrent protection . . . . . . . . . . . . . . . . . . 34
Open/Short Protection (OSP) . . . . . . . . . . . . 35
Layout rules . . . . . . . . . . . . . . . . . . . . . . . . . . 35
COMPPFC pin: PFC voltage control loop
compensation network, input of on-time
modulator . . . . . . . . . . . . . . . . . . . . . . . . . . . . 36
Compensation network . . . . . . . . . . . . . . . . . 36
On-time modulator input . . . . . . . . . . . . . . . . 36
Brownout undervoltage . . . . . . . . . . . . . . . . . 36
AUXPFC pin: demagnetization detection,
THD waveshaper, open pin protection. . . . . . 37
PFC auxiliary winding . . . . . . . . . . . . . . . . . . 37
THD wave shaper circuit . . . . . . . . . . . . . . . . 38
GPFC pin: PFC gate driver . . . . . . . . . . . . . . 38
VDD supply load . . . . . . . . . . . . . . . . . . . . . . 39
GND pin: IC ground reference . . . . . . . . . . . . 39
VDD pin: IC supply and gate-drive supply . . . 39
dV/dt capacitor . . . . . . . . . . . . . . . . . . . . . . . . 41
Buffer capacitor . . . . . . . . . . . . . . . . . . . . . . . 42
Start-up bleeder resistor. . . . . . . . . . . . . . . . . 42
GLHB pin: Low-side half-bridge gate-driver. . 43
SHHB pin: hard switching, capacitive mode,
ground of high-side driver, source of the
dV/dt supply . . . . . . . . . . . . . . . . . . . . . . . . . . 43
Hard switching . . . . . . . . . . . . . . . . . . . . . . . . 43
Capacitive mode . . . . . . . . . . . . . . . . . . . . . . 43
FSHB pin: supply for high-side driver . . . . . . 43
GHHB pin: High-side half-bridge gate driver . 43
continued >>
AN10958
Application note
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 9 August 2012
© NXP B.V. 2012. All rights reserved.
55 of 56
AN10958
NXP Semiconductors
Fluorescent lamp driver with PFC using the UBA2015/16 family
4
4.1
4.1.1
4.1.2
4.1.3
4.1.4
4.2
4.3
4.4
4.4.1
4.4.2
4.4.3
4.5
4.6
4.6.1
4.7
4.7.1
4.7.2
4.7.3
4.7.4
4.7.5
4.7.6
5
6
7
7.1
7.2
7.3
8
Application description . . . . . . . . . . . . . . . . . .
Power supply . . . . . . . . . . . . . . . . . . . . . . . . .
IC supply structure overview. . . . . . . . . . . . . .
Start-up . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Restart . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Stop . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Choice of the VBUS voltage . . . . . . . . . . . . . .
PFC stage design . . . . . . . . . . . . . . . . . . . . . .
Half-bridge circuit . . . . . . . . . . . . . . . . . . . . . .
Conventional heating . . . . . . . . . . . . . . . . . . .
Inductive mode heating . . . . . . . . . . . . . . . . .
Half-bridge current control . . . . . . . . . . . . . . .
Layout guide . . . . . . . . . . . . . . . . . . . . . . . . . .
Tips and tricks. . . . . . . . . . . . . . . . . . . . . . . . .
PFC disable . . . . . . . . . . . . . . . . . . . . . . . . . .
Power-on of new ballast design . . . . . . . . . . .
Test 1: check for short-circuits . . . . . . . . . . . .
Test 2: check if oscillation stage is reached . .
Test 3: check half-bridge functionality. . . . . . .
Test 3: check half-bridge functionality. . . . . . .
VFB disable . . . . . . . . . . . . . . . . . . . . . . . . . .
EOL disable . . . . . . . . . . . . . . . . . . . . . . . . . .
Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . .
References . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Legal information. . . . . . . . . . . . . . . . . . . . . . .
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . .
Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . .
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . .
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
44
44
44
44
44
44
44
45
46
46
47
48
49
51
51
52
52
52
52
52
52
53
53
53
54
54
54
54
55
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2012.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: [email protected]
Date of release: 9 August 2012
Document identifier: AN10958
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