NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 <20 mV Offset, 0.07 mV/5C, Low Power, Zero-Drift Operational Amplifier The NCS333 family of high precision op amps feature very low input offset voltage and near−zero drift over time and temperature. These low quiescent current amplifiers have high impedance inputs with a common−mode range 100 mV beyond the rails as well as rail−to−rail output swing within 50 mV of the rails. These op amps operate over a wide supply range from 1.8 V to 5.5 V. The NCS333 family exhibits outstanding CMRR without the crossover associated with traditional complementary input stages. The NCS333, as well as the dual version, NCS2333, and the quad version, NCS4333, come in a variety of packages and pinouts. Automotive qualified options are available under NCV prefix. Features • • • • • • • • Low Offset Voltage: 10 mV max for NCS333 Zero Drift: 0.07 mV/°C max Low Noise: 1.1 mVpp, 0.1 Hz to 10 Hz Quiescent Current per Channel: 17 mA Typical at 3.3 V Supply Supply Voltage: 1.8 V to 5.5 V Rail−to−Rail Input and Output NCV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q100 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Typical Applications www.onsemi.com 5 5 1 SOT23−5 SN SUFFIX CASE 483 1 SC70−5 SQ SUFFIX CASE 419A 1 DFN−8 MN SUFFIX CASE 506BW 8 MSOP−8 DM SUFFIX CASE 846A−02 14 1 SOIC−8 D SUFFIX CASE 751 1 SOIC−14 D SUFFIX CASE 751A DEVICE MARKING INFORMATION See general marking information in the device marking section on page 2 of this data sheet. ORDERING INFORMATION • Temperature Measurements • Transducer Applications • Current Sensing See detailed ordering and shipping information on page 3 of this data sheet. End Products • Battery Powered Instruments • Electronic Scales • Medical Instrumentation This document contains information on some products that are still under development. ON Semiconductor reserves the right to change or discontinue these products without notice. © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 4 1 Publication Order Number: NCS333/D NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 DEVICE MARKING INFORMATION Single Channel Configuration NCS333, NCV333 33EAYWG G 33HMG G TSOP−5/SOT23−5 CASE 483 SC70−5 CASE 419A Dual Channel Configuration NCS2333, NCV2333 8 1 NCS 2333 ALYWG G 8 2333 AYWG G 1 DFN8, 3x3, 0.65P CASE 506BW Micro8/MSOP8 CASE 846A−02 Quad Channel Configuration NCS4333, NCV4333 14 NCS4333 AWLYWWG 1 SOIC−14 CASE 751A 33E 33H A Y W M G or G = Specific Device Code (SOT23−5) = Specific Device Code (SC70−5) = Assembly Location = Year = Work Week = Date Code = Pb−Free Package (Note: Microdot may be in either location) www.onsemi.com 2 1 N2333 ALYW G SOIC−8 CASE 751 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PIN CONNECTIONS Single Channel Configuration NCS333, NCV333 OUT 1 VSS 2 IN+ 3 IN+ 1 VSS 2 IN− 3 5 VDD 4 IN− 5 VDD 4 OUT SC70−5 / SC−88−5 / SOT−353−5 SOT23−5 / TSOP−5 Dual Channel Configuration NCS2333, NCV2333 Quad Channel Configuration NCS4333, NCV4333 OUT 1 1 IN− 1 2 − − 13 IN− 4 IN+ 1 3 + + 12 IN+ 4 VDD 4 IN+ 2 5 + + 10 IN+ 3 IN− 2 6 − − 9 IN− 3 OUT 2 7 14 OUT 4 11 VSS 8 OUT 3 ORDERING INFORMATION Configuration Automotive Device Package Shipping † Single No NCS333SN2T1G SOT23−5 / TSOP−5 3000 / Tape & Reel NCS333ASN2T1G* (In Development) 3000 / Tape & Reel SC70−5 / SC−88−5 / SOT−353−5 NCS333SQ3T2G NCS333ASQ3T2G* (In Development) Dual 3000 / Tape & Reel Yes NCV333SN2T1G* (In Development) SOT23−5 / TSOP−5 3000 / Tape & Reel No NCS2333MNTXG* (In Development) DFN8 3000 / Tape & Reel NCS2333DR2G* (In Development) SOIC−8 2500 / Tape & Reel NCS2333DMR2G* (In Development) MICRO−8 4000 / Tape & Reel NCV2333DR2G* (In Development) SOIC−8 2500 / Tape & Reel NCV2333DMR2G* (In Development) MICRO−8 4000 / Tape & Reel No NCS4333DR2G* (In Development) SOIC−14 2500 / Tape & Reel Yes NCV4333DR2G* (In Development) SOIC−14 2500 / Tape & Reel Yes Quad 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *Contact local sales office for more information www.onsemi.com 3 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 ABSOLUTE MAXIMUM RATINGS Over operating free−air temperature, unless otherwise stated. Parameter Rating Unit 7 V Input Voltage (Note 1) (VSS) − 0.3 to (VDD) + 0.3 V Input Current (Note 1) ±10 mA Supply Voltage INPUT AND OUTPUT PINS Output Short Circuit Current (Note 2) Continuous TEMPERATURE Operating Temperature −40 to +125 °C Storage Temperature −65 to +150 °C Junction Temperature −65 to +150 °C Human Body Model (HBM) 4000 V Machine Model (MM) 200 V Charged Device Model (CDM) 2000 V 100 mA ESD RATINGS (Note 3) OTHER RATINGS Latch−up Current (Note 4) MSL Level 1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Input terminals are diode−clamped to the power−supply rails. Input signals that can swing more than 0.3 V beyond the supply rails should be current limited to 10 mA or less 2. Short−circuit to ground. 3. This device series incorporates ESD protection and is tested by the following methods: ESD Human Body Model tested per AEC−Q100−002 (JEDEC standard: JESD22−A114) ESD Machine Model tested per AEC−Q100−003 (JEDEC standard: JESD22−A115) 4. Latch−up Current tested per JEDEC standard: JESD78. THERMAL INFORMATION (Note 5) Parameter Thermal Resistance, Junction to Ambient Symbol qJA Package Value Unit °C/W SOT23−5/ TSOP5 235 SC70−5 / SC−88−5 / SOT−353−5 250 Micro8/MSOP8 238 SOIC−8 190 DFN−8 70 SOIC−14 156 5. As mounted on an 80x80x1.5 mm FR4 PCB with 650 mm2 and 2 oz (0.034 mm) thick copper heat spreader. Following JEDEC JESD/EIA 51.1, 51.2, 51.3 test guidelines RECOMMENDED OPERATING CONDITIONS Parameter Supply Voltage (VDD − VSS) Specified Operating Range NCS333 Symbol Range Unit VS 1.8 to 5.5 V TA −40 to 105 °C NCS333A, NCV333, NCx2333, NCx4333 Input Common Mode Voltage Range −40 to 125 VICMR VSS−0.1 to VDD+0.1 V Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. www.onsemi.com 4 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 ELECTRICAL CHARACTERISTICS: VS = 1.8 V to 5.5 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range, guaranteed by characterization and/or design. Parameter Symbol Conditions Min Typ Max Unit 3.5 10 mV INPUT CHARACTERISTICS Offset Voltage VOS VS = +5 V NCx333 NCxx333 Offset Voltage Drift vs Temp DVOS/DT Offset Voltage Drift vs Supply DVOS/DVS Input Bias Current 20 0.07 mV/°C 0.32 5 mV/V ±60 ±200 pA ±400 pA 0.03 VS = 1.8 V to 5.5 V IIB +400 Input Offset Current Common Mode Rejection Ratio ±50 IOS CMRR VSS − 0.1 < VCM < VDD + 0.1 VS = 1.8 V 111 VS = 3.3 V 118 VS = 5.0 V 106 VS = 5.5 V Input Resistance Input Capacitance RIN CIN 123 127 Differential 180 Common Mode 90 NCx333 Differential 2.3 Common Mode 4.6 Differential 4.1 Common Mode 7.9 NCx2333 dB GW pF OUTPUT CHARACTERISTICS Open Loop Voltage Gain Open Loop Output Impedance Output Voltage High AVOL Zout−OL VOH VSS + 100 mV < VCM < VDD − 100 mV 106 145 dB W f = 350 kHz, IO = 0 mA NCx333 300 f = 255 kHz, IO = 0 mA NCx2333 460 Referenced to VDD 8 50 mV 70 Output Voltage Low VOL Referenced to VSS 5 50 mV 70 Output Current Capability IO Capacitive Load Drive CL Sinking Current Sourcing Current 25 mA 6 See Figure 13 NOISE PERFORMANCE Voltage Noise Density Voltage Noise Current Noise Density eN fIN = 1 kHz 62 nV / √Hz eP−P fIN = 0.1 Hz to 10 Hz 1.1 mVPP fIN = 0.01 Hz to 1 Hz 0.5 iN fIN = 10 Hz NCx333 350 NCxx333 200 NCx333 350 NCxx333 255 fA / √Hz DYNAMIC PERFORMANCE Gain Bandwidth Product Gain Margin GBWP AM CL = 100 pF CL = 100 pF www.onsemi.com 5 18 kHz dB NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 ELECTRICAL CHARACTERISTICS: VS = 1.8 V to 5.5 V At TA = +25°C, RL = 10 kW connected to midsupply, VCM = VOUT = midsupply, unless otherwise noted. Boldface limits apply over the specified temperature range, guaranteed by characterization and/or design. Parameter Symbol Conditions Min Typ Max Unit Phase Margin fM CL = 100 pF 55 ° Slew Rate SR G = +1 0.1 V/ms 130 dB 20 ms DYNAMIC PERFORMANCE POWER SUPPLY Power Supply Rejection Ratio PSRR Turn−on Time tON Quiescent Current IQ 106 VS = 5 V 1.8 V ≤ VS ≤ 3.3 V No load, per channel 17 mA 25 27 3.3 V < VS ≤ 5.5 V 21 33 35 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. TYPICAL CHARACTERISTICS 120 100 105 GAIN (dB) 60 90 75 Gain 40 60 20 45 CL = 100 pF RL = 10 kW T = 25°C 0 −20 30 PHASE MARGIN (°) Phase Margin 80 120 110 100 CMRR (dB) 120 40 20 10 0 0 10 100 1k 10k 100k 70 60 50 30 15 −40 T = 25°C 90 80 10 1M 100 10k 100k FREQUENCY (Hz) FREQUENCY (Hz) Figure 1. Open Loop Gain and Phase Margin vs. Frequency Figure 2. CMRR vs. Frequency 120 1M 3 T = 25°C T = 25°C VS = 5.5 V, VOH 2 OUTPUT SWING (V) 100 PSRR (dB) 1k 80 +PSRR 60 −PSRR 40 VS = 1.8 V, VOH 1 0 VS = 1.8 V, VOL −1 20 −2 0 −3 VS = 5.5 V, VOL 10 100 1k 10k 100k 1M 0 1 2 3 4 5 6 7 8 9 FREQUENCY (Hz) OUTPUT CURRENT (mA) Figure 3. PSRR vs. Frequency Figure 4. Output Voltage Swing vs. Output Current www.onsemi.com 6 10 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 TYPICAL CHARACTERISTICS 200 150 100 IIB+ 0 IIB− −50 −100 −150 −200 −0.2 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 IIB+ 50 IIB− 0 −50 T = 25°C VS = 5 V −100 −150 −200 −40 2.0 −20 20 40 60 80 100 TEMPERATURE (°C) Figure 5. Input Bias Current vs. Common Mode Voltage Figure 6. Input Bias Current vs. Temperature 5 4 VS = 5.5 V 3 25 15 VS = 5.0 V 2 VS = 3.3 V 1 INPUT (V) 20 VS = 1.8 V 10 4 Input 5 2 0 1 −1 0 VS = 5.0 V AV = +1 RL = 10 kW −3 Per Channel 0 −40 −20 0 20 40 60 80 −4 −100 100 3 Output −2 −1 −2 −3 0 100 200 300 400 TEMPERATURE (°C) TIME (ms) Figure 7. Quiescent Current vs. Temperature Figure 8. Large Signal Step Response 0.20 1.0 0.15 0.5 Input 0.10 3.0 2.5 Input 2.0 0 0.05 VS = 5.0 V AV = −1 RL = 10 kW 0 −0.05 INPUT (V) INPUT AND OUTPUT (V) 0 COMMON MODE VOLTAGE (V) 30 IQ (mA) 100 −0.5 VS = 5.0 V AV = −10 RL = 10 kW −1.0 −1.5 Output 1.5 1.0 0.5 OUTPUT (V) 50 150 OUTPUT (V) T = 25°C VS = 1.8 V INPUT BIAS CURRENT (pA) INPUT BIAS CURRENT (pA) 200 −2.0 0 −0.10 −2.5 −0.5 −0.15 −10 −3.0 −1.0 Output 0 10 20 30 TIME (ms) TIME (50 ms/div) Figure 9. Small Signal Step Response Figure 10. Positive Overvoltage Recovery www.onsemi.com 7 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 TYPICAL CHARACTERISTICS 3.0 1.0 2.5 0.5 500 T = 25°C RL = 10 kW 400 0 1.5 −0.5 VS = 5.0 V AV = −10 RL = 10 kW 1.0 0.5 −1.0 −1.5 Input 0 −2.0 −0.5 −2.5 −1.0 −3.0 OUTPUT (V) SETTLING TIME (ms) INPUT (V) Output 2.0 300 200 100 0 65 60 55 50 45 40 35 30 25 20 15 10 5 0 100 GAIN (V/V) Figure 11. Negative Overvoltage Recovery Figure 12. Setting Time to 0.1% vs. Closed−Loop Gain 1000 VCM = VS/2 RL = 10 kW T = 25°C 750 T = 25°C 500 250 0 −250 −500 −750 −1000 10 100 1000 0 1 2 3 4 5 6 7 8 LOAD CAPACITANCE (pF) TIME (s) Figure 13. Small−Signal Overshoot vs. Load Capacitance Figure 14. 0.1 Hz to 10 Hz Noise 9 10 1000 1000 T = 25°C T = 25°C CURRENT NOISE (fA/√Hz) VOLTAGE NOISE (nV/√Hz) 10 TIME (50 ms/div) VOLTAGE (nV) OVERSHOOT (%) 1 100 100 10 10 1 10 100 1000 1 10,000 10 100 1000 FREQUENCY (Hz) FREQUENCY (Hz) Figure 15. Voltage Noise Density vs. Frequency Figure 16. Current Noise Density vs. Frequency www.onsemi.com 8 10,000 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 APPLICATIONS INFORMATION APPLICATION CIRCUITS to reduce power loss across the resistor. The op amp amplifies the voltage drop across the sense resistor with a gain set by external resistors R1, R2, R3, and R4 (where R1 = R2, R3 = R4). Precision resistors are required for high accuracy, and the gain is set to utilize the full scale of the ADC for the highest resolution. Low−Side Current Sensing The goal of low−side current sensing is to detect over−current conditions or as a method of feedback control. A sense resistor is placed in series with the load to ground. Typically, the value of the sense resistor is less than 100 mW R3 VLOAD VDD VDD VDD Load R1 Microcontroller + ADC RSENSE control − R2 R4 Figure 17. Low−Side Current Sensing Differential Amplifier for Bridged Circuits produced is relatively small and needs to be amplified before going into an ADC. Precision amplifiers are recommended in these types of applications due to their high gain, low noise, and low offset voltage. Sensors to measure strain, pressure, and temperature are often configured in a Wheatstone bridge circuit as shown in Figure 18. In the measurement, the voltage change that is VDD VDD − + Figure 18. Bridge Circuit Amplification EMI Susceptibility and Input Filtering General Layout Guidelines Op amps have varying amounts of EMI susceptibility. Semiconductor junctions can pick up and rectify EMI signals, creating an EMI−induced voltage offset at the output, adding another component to the total error. Input pins are the most sensitive to EMI. The NCS333 op amp family integrates low−pass filters to decrease sensitivity to EMI. To ensure optimum device performance, it is important to follow good PCB design practices. Place 0.1 mF decoupling capacitors as close as possible to the supply pins. Keep traces short, utilize a ground plane, choose surface−mount components, and place components as close as possible to the device pins. These techniques will reduce susceptibility to electromagnetic interference (EMI). Thermoelectric effects can create an additional temperature dependent offset voltage at the input pins. To reduce these effects, use metals with low thermoelectric−coefficients and prevent temperature gradients from heat sources or cooling fans. www.onsemi.com 9 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS SC−88A (SC−70−5/SOT−353) CASE 419A−02 ISSUE L A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. 419A−01 OBSOLETE. NEW STANDARD 419A−02. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. G 5 4 −B− S 1 2 DIM A B C D G H J K N S 3 0.2 (0.008) D 5 PL B M M N J C K H SOLDER FOOTPRINT 0.50 0.0197 0.65 0.025 0.65 0.025 0.40 0.0157 1.9 0.0748 SCALE 20:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 10 INCHES MIN MAX 0.071 0.087 0.045 0.053 0.031 0.043 0.004 0.012 0.026 BSC --0.004 0.004 0.010 0.004 0.012 0.008 REF 0.079 0.087 MILLIMETERS MIN MAX 1.80 2.20 1.15 1.35 0.80 1.10 0.10 0.30 0.65 BSC --0.10 0.10 0.25 0.10 0.30 0.20 REF 2.00 2.20 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS TSOP−5 CASE 483−02 ISSUE K NOTE 5 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS A AND B DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.15 PER SIDE. DIMENSION A. 5. OPTIONAL CONSTRUCTION: AN ADDITIONAL TRIMMED LEAD IS ALLOWED IN THIS LOCATION. TRIMMED LEAD NOT TO EXTEND MORE THAN 0.2 FROM BODY. D 5X 0.20 C A B 0.10 T M 2X 0.20 T B 5 1 4 2 S 3 K B DETAIL Z G A A TOP VIEW DIM A B C D G H J K M S DETAIL Z J C 0.05 H SIDE VIEW C SEATING PLANE END VIEW MILLIMETERS MIN MAX 3.00 BSC 1.50 BSC 0.90 1.10 0.25 0.50 0.95 BSC 0.01 0.10 0.10 0.26 0.20 0.60 0_ 10 _ 2.50 3.00 SOLDERING FOOTPRINT* 0.95 0.037 1.9 0.074 2.4 0.094 1.0 0.039 0.7 0.028 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 11 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS DFN8, 3x3, 0.65P CASE 506BW ISSUE O A B D L NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30mm FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. L L1 PIN ONE REFERENCE 2X 0.10 C ÉÉÉ ÉÉÉ ÉÉÉ 0.10 C 2X DETAIL A OPTIONAL CONSTRUCTIONS E ÉÉ ÉÉ EXPOSED Cu TOP VIEW (A3) DETAIL B 0.05 C DIM A A1 A3 b D D2 E E2 e K L L1 MOLD CMPD DETAIL B A OPTIONAL CONSTRUCTIONS MILLIMETERS MIN MAX 0.80 1.00 0.00 0.05 0.20 REF 0.25 0.35 3.00 BSC 2.30 2.50 3.00 BSC 1.55 1.75 0.65 BSC 0.20 −−− 0.35 0.45 0.00 0.15 0.05 C NOTE 4 SIDE VIEW C RECOMMENDED SOLDERING FOOTPRINT* SEATING PLANE D2 DETAIL A 1 8X A1 2.50 4 L E2 8X K 8 5 e/2 e 8X 1.75 ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ ÇÇÇÇÇÇÇÇ 1 b 0.65 PITCH 0.10 C A B 0.05 C NOTE 3 BOTTOM VIEW 8X 0.62 3.30 8X 0.40 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 12 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS Micro8t CASE 846A−02 ISSUE J D HE PIN 1 ID NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A DOES NOT INCLUDE MOLD FLASH, PROTRUSIONS OR GATE BURRS. MOLD FLASH, PROTRUSIONS OR GATE BURRS SHALL NOT EXCEED 0.15 (0.006) PER SIDE. 4. DIMENSION B DOES NOT INCLUDE INTERLEAD FLASH OR PROTRUSION. INTERLEAD FLASH OR PROTRUSION SHALL NOT EXCEED 0.25 (0.010) PER SIDE. 5. 846A-01 OBSOLETE, NEW STANDARD 846A-02. E b 8 PL 0.08 (0.003) −T− DIM A A1 b c D E e L HE e M T B S A S SEATING PLANE A 0.038 (0.0015) A1 MILLIMETERS NOM MAX −− 1.10 0.08 0.15 0.33 0.40 0.18 0.23 3.00 3.10 3.00 3.10 0.65 BSC 0.40 0.55 0.70 4.75 4.90 5.05 MIN −− 0.05 0.25 0.13 2.90 2.90 L c RECOMMENDED SOLDERING FOOTPRINT* 8X 8X 0.48 0.80 5.25 0.65 PITCH DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 13 INCHES NOM −− 0.003 0.013 0.007 0.118 0.118 0.026 BSC 0.021 0.016 0.187 0.193 MIN −− 0.002 0.010 0.005 0.114 0.114 MAX 0.043 0.006 0.016 0.009 0.122 0.122 0.028 0.199 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS SOIC−8 NB CASE 751−07 ISSUE AK −X− NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION A AND B DO NOT INCLUDE MOLD PROTRUSION. 4. MAXIMUM MOLD PROTRUSION 0.15 (0.006) PER SIDE. 5. DIMENSION D DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.127 (0.005) TOTAL IN EXCESS OF THE D DIMENSION AT MAXIMUM MATERIAL CONDITION. 6. 751−01 THRU 751−06 ARE OBSOLETE. NEW STANDARD IS 751−07. A 8 5 S B 0.25 (0.010) M Y M 1 4 K −Y− G C N DIM A B C D G H J K M N S X 45 _ SEATING PLANE −Z− 0.10 (0.004) H M D 0.25 (0.010) M Z Y S X J S SOLDERING FOOTPRINT* 1.52 0.060 7.0 0.275 4.0 0.155 0.6 0.024 1.270 0.050 SCALE 6:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 14 MILLIMETERS MIN MAX 4.80 5.00 3.80 4.00 1.35 1.75 0.33 0.51 1.27 BSC 0.10 0.25 0.19 0.25 0.40 1.27 0_ 8_ 0.25 0.50 5.80 6.20 INCHES MIN MAX 0.189 0.197 0.150 0.157 0.053 0.069 0.013 0.020 0.050 BSC 0.004 0.010 0.007 0.010 0.016 0.050 0 _ 8 _ 0.010 0.020 0.228 0.244 NCS333, NCV333, NCS2333, NCV2333, NCS4333, NCV4333 PACKAGE DIMENSIONS D SOIC−14 NB CASE 751A−03 ISSUE K A B 14 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE PROTRUSION SHALL BE 0.13 TOTAL IN EXCESS OF AT MAXIMUM MATERIAL CONDITION. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD PROTRUSIONS. 5. MAXIMUM MOLD PROTRUSION 0.15 PER SIDE. 8 A3 E H L 1 0.25 M DETAIL A 7 B 13X M b 0.25 M C A S B S e DETAIL A h A X 45 _ M A1 C SEATING PLANE DIM A A1 A3 b D E e H h L M MILLIMETERS MIN MAX 1.35 1.75 0.10 0.25 0.19 0.25 0.35 0.49 8.55 8.75 3.80 4.00 1.27 BSC 5.80 6.20 0.25 0.50 0.40 1.25 0_ 7_ INCHES MIN MAX 0.054 0.068 0.004 0.010 0.008 0.010 0.014 0.019 0.337 0.344 0.150 0.157 0.050 BSC 0.228 0.244 0.010 0.019 0.016 0.049 0_ 7_ SOLDERING FOOTPRINT* 6.50 14X 1.18 1 1.27 PITCH 14X 0.58 DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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