MHF20N60CT 600V Silicon N-Channel Power MOSFET ■ Features ■ Outline • Fast switching. • ESD improved capability. • Low gate charge. • Low reverse transfer capacitances. • 100% single pulse avalanche energy test. TO-220F 0.189(4.80) 0.173(4.40) 0.409(10.40) 0.378(9.60) 0.114(2.90) 0.098(2.50) 0.1 30 0 . 11 ( 3 . 3 0 ) 8(3 .0) 0.638(16.20) 0.606(15.40) ■ Mechanical data G D S 0.056(1.42) 0.044(1.12) Drain 0.551(14.0) 0.472(12.0) Gate 0.150(3.80) 0.134(3.40) • Epoxy : UL94-V0 rated flame retardant. • Case : JEDEC TO-220F molded plastic body. • Terminals : Solder plated, solderable per MIL-STD-750, Method 2026. • Polarity: As mark ed. • Mounting Position : Any. • Weight : Approximated 2.25 gram . Marking code 0.102(2.60) 0.082(2.10) 0.035(0.90) 0.028(0.70) 0.022(0.55) 0.014(0.35) 0.108(2.74) 0.092(2.34) Source Dimensions in inches and (millimeters) ■ Absolute (T C = 25 O C unless otherwise specified) PARAMETER CONDITIONS VDSS Drain-Source Voltage Continuous Drain Current Continuous Drain Current Symbol T C = 100 O C ID MHF20N60CT 600 UNIT V 20 14 A Pulsed Drain Current(1) IDM 80 Gate-Source Voltage VGS ±30 V Single Pulse Avalanche Energy(2) EAS 1200 mJ Avalanche Current(1) IAR 4.5 A Repetitive Avalanche Energy(1) EAR 100 mJ Power Dissipation Derating factor above 25 O C Peak Diode Recovery dv/dt(3) Operating and Storage Temperature Range Maximum temperature for soldering PD 85 W 0.68 W/ O C V/ns dV/dt 5.0 TJ, TSTG -55 ~ +150 O C TL 300 O C NOTE : 1.Repetitive rating; pulse width limited by maximum junction temperature. 2.L=10.0mH, I D = 15.5A, Start T J = 25 O C. 3.I S D =20A,di/dt ≤100A/us, V D D≤BV D S , Start T J = 25 O C. 1 Document ID : DS-21M60 Revised Date : 2015/09/16 Revision : C1 MHF20N60CT 600V Silicon N-Channel Power MOSFET ■ Electrical characteristics (T C = 25 O C unless otherwise specified) CONDITIONS PARAMETER Drain-Source Breakdown Voltage Bvdss Temperature Coefficient Drain-Source Leakage Current V G S = 0V, I D = 250µA O I D = 250uA, Reference 25 C V D S = 600V, V G S = 0V, T a = 25°C V D S = 480V, V G S = 0V, T a = 125°C Symbol MIN. VDSS 600 TYP. MAX. UNIT V BV D S S / T J V/ O C 0.65 1 IDSS uA 100 Gate-Source Leakage Current, Forward V G S = 30V IGSS(F) 100 Gate-Source Leakage Current, Reverse V G S = -30V IGSS(R) -100 nA ■ ON Characteristics CONDITIONS PARAMETER Symbol MIN. 2.0 Gate Threshold Voltage V D S = V G S , I D = 250µA VGS(th) Static Drain-Source On-Resistance V G S = 10V, I D = 10A RDS(on) TYP. MAX. UNIT 4.0 V 0.36 0.45 Ω TYP. MAX. UNIT ■ Dynamic Characteristics CONDITIONS PARAMETER Forward Transconductance V D S = 15V, I D = 10A Input Capacitance Output Capacitance V D S = 25V, V G S = 0V, f = 1.0MHz Reverse Transfer Capacitance Symbol MIN. gfs 17 Ciss 2847 Coss 252 Crss 20 S pF ■ Resistive Switching Characteristics CONDITIONS PARAMETER Turn-on Delay Time Symbol MIN. TYP. td ( O N ) 36 tr 73 td ( O F F ) 166 Fail Time tf 73 Total Gate Charge Qg 61 Qgs 14 Qgd 24 Rise Time Turn-off Delay Time Gate-Source Charge I D = 20A, V D D = 300V, R G = 25Ω I D = 20A, V D D = 300V, V G S = 10V Gate-Drain Charge MAX. UNIT ns nC ■ Source-Drain Diode Characteristics CONDITIONS PARAMETER Symbol MIN. TYP. MAX. Continuous Source-Drain Diode Current Boby Diode IS 20 Pulse Diode Forward Current Boby Diode ISM 80 Body Diode Voltage I S = 20A, V G S = 0V Reverse recovery time Reverse recovery charge O I S = 20A, T J = 25 C, dI F /dt = 100A/μs, V G S = 0V VSD UNIT A V 1.5 trr 425 ns Qrr 3.7 uC ■ Thermal characteristics PARAMETER Thermal Resistance CONDITIONS Symbol MIN. TYP. Junction to Case RθJC 1.47 Junction to Ambient RθJA 100 2 MAX. UNIT O C/W Document ID : DS-21M60 Revised Date : 2015/09/16 Revision : C1 MHF20N60CT 600V Silicon N-Channel Power MOSFET ■ Rating and characteristic curves 3 Document ID : DS-21M60 Revised Date : 2015/09/16 Revision : C1 MHF20N60CT 600V Silicon N-Channel Power MOSFET ■ Rating and characteristic curves 4 Document ID : DS-21M60 Revised Date : 2015/09/16 Revision : C1 MHF20N60CT 600V Silicon N-Channel Power MOSFET ■ Rating and characteristic curves 5 Document ID : DS-21M60 Revised Date : 2015/09/16 Revision : C1 MHF20N60CT 600V Silicon N-Channel Power MOSFET ■ Test circuit and waveform 6 Document ID : DS-21M60 Revised Date : 2015/09/16 Revision : C1 MHF20N60CT 600V Silicon N-Channel Power MOSFET ■ Test circuit and waveform 7 Document ID : DS-21M60 Revised Date : 2015/09/16 Revision : C1 MHF20N60CT 600V Silicon N-Channel Power MOSFET ■ CITC reserves the right to make changes to this document and its products and specifications at any time without notice. ■ Customers should obtain and confirm the latest product information and specifications before final design, purchase or use. ■ CITC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does CITC assume any liability for application assistance or customer product design. ■ CITC does not warrant or accept any liability with products which are purchased or used for any unintended or unauthorized application. ■ No license is granted by implication or otherwise under any intellectual property rights of CITC. ■ CITC products are not authorized for use as critical components in life support devices or systems without express written approval of CITC. http://www.citcorp.com.tw/ Tel:886-3-5600628 Fax:886-3-5600636 Add:Rm. 3, 2F., No.32, Taiyuan St., Zhubei City, Hsinchu County 302, Taiwan (R.O.C.) 8 Document ID : DS-21M60 Revised Date : 2015/09/16 Revision : C1