IDD09E60 Fast Switching Emitter Controlled Diode Product Summary VRRM Feature 600 V IF 9 A VF 1.5 V T jmax 175 °C • 600V Emitter Controlled technology • Fast recovery • Soft switching • Low reverse recovery charge PG-TO252-3 • Low forward voltage • 175°C operating temperature • Easy paralleling Type Package IDD09E60 PG-TO252-3 Ordering Code Marking - D09E60 Pin 1 PIN 2,4 NC PIN 3 C A Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Parameter Symbol Symbol Repetitive peak reverse voltage Repetitive peak reverse voltage VRRM VRRM IF IF Continousforward forward current Continuous current TTCC==25°C 25C TTC ==90°C 90C C Value Value 600 600 19.3 19.3 1313 Unit Unit VV A A Surge non repetitive forward current Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave I FSM IFSM 4040 A Maximum repetitive forward current repetitive forward current TMaximum C = 25C, tp limited by tj,max, D = 0.5 IFRM I FRM 29.5 29.5 A TC=25°C, tp limited by Tjmax, D=0.5 Power dissipation Power TC = 25Cdissipation TTCC==25°C 90C PtotP t o t 57.7 32.7 57.7 WW TC=25°C, tp=10 ms, sine halfwave Tj Operating TC=90°C junction temperature Tstg Tj , T stg TS T Storage temperature Operating and storage temperature Soldering temperature Soldering temperature 1.6mm (0.063 in.) from case for 10 s reflow soldering, MSL3 Rev. 2.4 S Page 1 -40…+175 32.7 -55...+150 -55...+175 260 260 °C°C °C 20131205 IDD09E60 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 2.6 @ min. footprint - - 75 @ 6 cm 2 cooling area 1) - - 50 Characteristics Thermal resistance, junction - case RthJC SMD version, device on PCB: RthJA K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Static Characteristics Reverse leakage current IR µA V R=600V, Tj=25°C - - 50 V R=600V, Tj=150°C - - 750 Forward voltage drop VF V IF=9A, Tj=25°C - 1.5 2 IF=9A, Tj=150°C - 1.5 - 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.4 Page 2 20131205 IDD09E60 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Dynamic Characteristics Reverse recovery time ns t rr V R=400V, IF=9A, di F/dt=800A/µs, Tj=25°C - 75 - V R=400V, IF=9A, di F/dt=800A/µs, Tj=125°C - 110 - V R=400V, IF=9A, di F/dt=800A/µs, Tj=150°C - 112 - Peak reverse current A I rrm V R=400V, IF = 9 A, diF/dt=800A/µs, Tj=25°C - 10.2 - V R=400V, IF =9A, diF /dt=800A/µs, T j=125°C - 11.8 - V R=400V, IF =9A, diF /dt=800A/µs, T j=150°C - 12.3 - Reverse recovery charge nC Q rr V R=400V, IF=9A, di F/dt=800A/µs, Tj=25°C - 343 - V R=400V, IF =9A, diF /dt=800A/µs, T j=125°C - 585 - V R=400V, IF =9A, diF /dt=800A/µs, T j=150°C - 612 - V R=400V, IF=9A, di F/dt=800A/µs, Tj=25°C - 4 - V R=400V, IF=9A, di F/dt=800A/µs, Tj=125°C - 5.5 - V R=400V, IF=9A, di F/dt=800A/µs, Tj=150°C - 5.7 - Reverse recovery softness factor Rev. 2.4 S Page 3 20131205 IDD09E60 1 Power dissipation 2 Diode forward current Ptot = f (TC) IF = f(TC) parameter: Tj ≤ 175 °C parameter: Tj≤ 175°C 20 60 W A 50 16 14 40 IF P tot 45 35 12 30 10 25 8 20 6 15 4 10 2 5 0 25 50 75 100 125 0 25 175 °C 50 75 100 125 TC 175 °C TC 3 Typ. diode forward current 4 Typ. diode forward voltage IF = f (VF) VF = f (Tj) 2 27 18A A -55°C 25°C 100°C 150°C 21 V IF VF 18 1.6 15 9A 12 1.4 9 4,5A 6 1.2 3 0 0 0.5 1 1.5 1 -60 2.5 V VF Rev. 2.4 Page 4 -20 20 60 100 160 °C Tj 20131205 IDD09E60 5 Typ. reverse recovery time 6 Typ. reverse recovery charge trr = f (diF/dt) Qrr =f(diF/dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125 °C 800 350 nC 18A ns 700 650 trr Qrr 18A 9A 4.5A 250 600 9A 550 200 500 150 4.5A 450 400 100 350 50 200 300 400 500 600 700 800 300 200 A/µs 1000 di F/dt 300 400 500 600 700 800 A/µs 1000 diF/dt 7 Typ. reverse recovery current 8 Typ. reverse recovery softness factor Irr = f (diF/dt) S = f(diF /dt) parameter: V R = 400V, T j = 125°C parameter: VR = 400V, Tj = 125°C 14 14 A 18A 9A 4.5A 12 10 11 10 S Irr 18A 9A 4.5A 8 9 6 8 7 4 6 2 5 4 200 Rev. 2.4 300 400 500 600 700 800 0 200 A/µs 1000 di F/dt Page 5 300 400 500 600 700 800 A/µs 1000 diF/dt 20131205 IDD09E60 9 Max. transient thermal impedance ZthJC = f (tp) parameter : D = t p/T 10 1 IDD09E60 K/W ZthJC 10 0 10 -1 D = 0.50 0.20 0.10 0.05 10 -2 0.02 single pulse 10 -3 -7 10 10 -6 10 -5 0.01 10 -4 10 -3 10 -2 s 10 0 tp Rev. 2.4 Page 6 20131205 IDD09E60 PG - TO252 - 3 Rev. 2.4 Page 7 20131205 IDD09E60 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. 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The Technologies component described in this Data Sheet may be used in life-support devices or systems and/or automotive, aviation and aerospace applications or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support, automotive, aviation and aerospace device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Page 8 20131205