Mitsubishi ML7XX16 Mitsubishi laser diodes 2.5gbps ingaasp dfb laser diode Datasheet

MITSUBISHI LASER DIODES
ML7xx16 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
TYPE
NAME
ML725B16F/ML720J16S/ML725J16F
DESCRIPTION
FEATURES
ML7xx16 series are uncooled DFB (Distributed Feedback) laser
diodes for 2.5Gbps transmission emitting light beam at 1310nm.
λ/4 shifted grating structure is employed to obtain excellent SMSR
performance under 2.5Gbps modulation. Furthermore, ML7xx16 can
operate in the wide temperature range form -20ºC to 85ºC without any
temperature control.
λ/4 phase shifted grating structure
Wide temperature range operation
(-20ºC to 85ºC )
High side-mode-suppression-ratio (typical 45dB)
High resonance frequency (typical 11GHz)
APPLICATION
ABSOLUTE MAXIMUM RATINGS
2.5Gbps transmission
Parameter
Symbol
Ratings
Unit
CW
6
mW
Conditions
Po
Output power
IF
Laser forward current
-
200
mA
VRL
Laser reverse voltage
-
2
V
IRD
PD forward current
-
2
mA
VRD
Tc
PD reverse voltage
-
20
Operation temperature
-
-20 ~+85
ºC
Storage temperature
-
-40 ~+100
ºC
Tstg
V
ELECTRICAL/OPTICAL CHARACTERISTICS (Tc=25ºC)
Symbol
Ith
Iop
Vop
η
λp
SMSR
θ//
θ⊥
fr
tr,tf
Parameter
Conditions
Limits
Min.
Typ.
Max.
Unit
CW
-
10
15
CW,Tc=85ºC
-
35
50
mA
mA
Operation current
CW,Po=5mW
-
30
75
40
100
mA
mA
Operating voltage
CW,Po=5mW,Tc=85ºC
CW,Po=5mW
CW,Po=5mW
0.18
1.1
0.25
1.8
-
V
mW/mA
Threshold current
Slope efficiency
Peak wavelength
Side mode suppression ratio
CW,Po=5mW,Tc=-20ºC~+85ºC
1290
1310
1330
nm
CW,Po=5mW,Tc=-20ºC~+85ºC
45
-
dB
Beam divergence angle (parallel)
CW,Po=5mW
35
-
25
40
deg.
-
30
47
deg.
-
11
-
GHz
-
100
150
psec
0.1
-
2.0
mA
(perpendicular) CW,Po=5mW
Resonance frequency
Rise and fall time(10%-90%)
2.48832Gbps, Ibias=Ith,Ipp=40mA
2.48832Gbps, Ibias=Ith,Ipp=40mA
not including package
Im
Id
Monitoring current (PD)
CW,Po=5mW,VRD=1V
Dark current (PD)
VRD=5V
-
-
0.1
µA
Ct
Capacitance (PD)
VRD=5V,f=1MHz
-
10
20
pF
MITSUBISHI
ELECTRIC
Jan. 2002
MITSUBISHI LASER DIODES
ML7xx16 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
OUTLINE DRAWINGS
ML725B16F
(Dimension:mm)
φ 5.6 +0
-0.03
φ 4.25
φ 3.55±0.1
(0.25)
2-90º
(3)
Case
(0.25)
(2)
(4)
1±0.1
0.25±0.03
(Glass)
(3)
(4)
(1)
PD
LD
φ 2.0Min.
±0.1 2.1±0.15
1.2
1.27 ±0.03
φ 1.0Min.
Emitting Facet
(2)
(1)
Reference Plane
18 ±1
ML725B16F
φ 2.0±0.25
(P.C.D.)
4-φ 0.45±0.05
(2)
(1)
(Dimension:mm)
φ 5.6 +0
-0.03
φ 4.25
φ 3.55±0.1
ML720J16S
(0.25)
(3)
2-90º
(2)
(1)
Case
(0.25)
(4)
PD
LD
φ 2.0Min.
φ 1.0Min.
±0.1 2.1±0.15
1.2
1.27 ±0.03
0.25±0.03
(Glass)
1±0.1
18 ±1
(3)
(2)
(4)
Emitting Facet
(1)
Reference Plane
ML720J16S
φ 2.0±0.25
(P.C.D.)
4-φ 0.45±0.05
(2)
(1)
φ 5.6 +0
-0.03
ML725J16F
φ 4.3
(Dimension:mm)
(0.25)
Top View
(1)
(4)
(3)
Case
(2)
(0.25)
2-90º
(3)
(4)
1±0.1
PD
1.27 ±0.03
3.97 ±0.15
Emitting Facet
18 ±1
LD
(2)
Reference Plane
1.2 ±0.1
(7.51)
φ 3.75±0.1
ML725J16F
φ 2.0±0.25
(P.C.D.)
4-φ 0.45±0.05
(1)
(2)
(1)
MITSUBISHI LASER DIODES
ML7xx16 SERIES
2.5Gbps InGaAsP DFB LASER DIODE
TYPICAL CHARACTERISTICS
Light output Po (mW)
10
8
6
-20°C
4
25°C
50°C
2
85°C
0
0
20
40
60
80
100
Forward current If (mA)
Fig. 1 Light output v.s. forward current
Light output Po (mW)
-30
Po=5mW
-20°C
-40
25°C
-50
50°C
85°C
-60
-70
-80
-90
1290
1300
1310
1320
1330
Forward current If (mA)
Fig. 2 Spectrum
Relative light output
1.2
θ⊥
θ//
Po=5mW
Tc=25°C
1.0
0.8
0.6
0.4
0.2
0.0
-60
Fig. 3 Far field pattern
-40
-20
0
Angle (°)
20
40
60
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