Thinki ER1606N 16 ampere heatsink common anode fast recovery half bridge rectifier Datasheet

®
ER1602N thru ER1606N
Pb Free Plating Product
Pb
ER1602N/ER1604N/ER1606N
16 Ampere Heatsink Common Anode Fast Recovery Half Bridge Rectifiers
TO-220AB
Features
Latest GPP technology with super fast recovery time
Low forward voltage drop
High current capability
Low reverse leakage current
High surge current capability
Unit:mm
9.90±0.20
0
.2
±0
0
.6
4.50±0.20
13.08±0.20
Mechanical Data
Case: Heatsink TO-220AB/TO-220CE
Epoxy: UL 94V-0 rate flame retardant
Terminals: Solderable per MIL-STD-202
method 208
Polarity: As marked on diode body
Mounting position: Any
Weight: 2.2 gram approximately
6.50±0.20
9.19±0.20
Automotive Inverters and Solar Inverters
Plating Power Supply,SMPS,Motor Control and UPS
Car Audio Amplifiers and Sound Device Systems
1.30±0.20
2.40±0.20
1.27±0.20
1.52±0.20
3.02±0.20
Application
2.80±0.20
15.70±0.20
φ3
0.80±0.20
2.54typ
2.54typ
0.50±0.20
Case
Case
Case
Negative
Positive
Common Cathode Common Anode
Suffix "N"
Doubler
Tandem Polarity
Suffix "D"
Case
Series
Tandem Polarity
Suffix "S"
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
o
Rating at 25 C ambient temperature unless otherwise specified.
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SYMBOL
ER1602N ER1604N ER1606N UNIT
Maximum Recurrent Peak Reverse Voltage
VRRM
200
400
600
V
Maximum RMS Voltage
VRMS
140
280
420
V
Maximum DC Blocking Voltage
VDC
200
400
600
V
Maximum Average Forward Rectified
16.0
IF(AV)
o
Current TC=100 C
A
Peak Forward Surge Current, 8.3ms single
Half sine-wave superimposed on rated load
IFSM
175
VF
0.98
150
A
(JEDEC method)
Maximum Instantaneous Forward Voltage
@ 8.0 A
1.3
o
Maximum DC Reverse Current @TJ=25 C
o
At Rated DC Blocking Voltage @TJ=125 C
IR
5.0
uA
uA
nS
Trr
35
Typical junction Capacitance (Note 2)
CJ
90
Operating Junction and Storage
Temperature Range
V
100
Maximum Reverse Recovery Time (Note 1)
Typical Thermal Resistance (Note 3)
1.7
R JC
2.2
TJ, TSTG
-55 to + 150
pF
o
C/W
o
C
NOTES : (1) Reverse recovery test conditions IF = 0.5A, IR = 1.0A, Irr = 0.25A.
(2) Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts DC.
(3) Thermal Resistance junction to case.
Rev.06
© 1995 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com.tw/
®
ER1602N thru ER1606N
FIG.2 - MAXIMUM NON-REPETITIVE
PEAK FORWARD SURGE CURRENT
FIG.1 - FORWARD CURRENT DERATING CURVE
200
PEAK FORWARD SURGE CURRENT,
AMPERES
AVERAGE FORWARD RECTIFIED
CURRENT, AMPERES
16
13
10
8
6
4
60 Hz Resistive or
Inductive load
Pulse Width 8.3ms
Single Half-Sire-Wave
(JEDEC Method)
175
150
125
100
75
50
25
0
0
0
50
100
150
1
CASE TEMPERATURE, C
100
FIG.4 - TYPICAL REVERSE CHARACTERISTICS
FIG.3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
1000
80
INSTANTANEOUS REVERSE CURRENT,
MICROAMPERES
IINSTANTANEOUS FORWARD CURRENT,
AMPERES
10
NUMBER OF CYCLES AT 60Hz
o
ER1602N
ER1604N
8
ER1606N
0.1
o
TJ=25 C
PULSE WIDTH=300uS
1% DUTY CYCLE
0.01
0.2
0.4
0.6
0.8
1.0
1.2
1.4
o
TJ=125 C
100
10
o
TJ=25 C
1
0.1
0
1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE VOLTAGE,%
FIG.5 - TYPICAL JUNCTION CAPACITANCE
JUNCTION CAPACITANCE, pF
1000
o
TJ = 25 C
f = 1.0 MHZ
Vsig = 50mVp-p
100
10
0.1
1.0
4.0
10
100
REVERSE VOLTAGE, VOLTS
Rev.06
© 1995 Thinki Semiconductor Co., Ltd.
Page 2/2
http://www.thinkisemi.com.tw/
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