CYSTEKEC HBNP5213N6-0-T1-G Npn and pnp dual epitaxial planar transistor Datasheet

Spec. No. : C627N6
Issued Date : 2013.10.17
Revised Date :
Page No. : 1/8
CYStech Electronics Corp.
NPN AND PNP Dual Epitaxial Planar Transistors
HBNP5213N6
Features
• High BVCEO
• High current
• Excellent DC current gain characteristics
• Pb-free lead plating and halogen-free package
Equivalent Circuit
Outline
HBNP5213N6
SOT-23-6L
C1
B : Base E : Emitter
E1
C : Collector
C2
B1
E2
B2
Ordering Information
Device
HBNP5213N6-0-T1-G
Package
SOT-23-6L
(Pb-free lead plating and halogen-free package)
Shipping
3000 pcs / tape & reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and
green compound products
Packing spec, T1 : 3000 pcs / tape & reel, 7” reel
Product rank, zero for no rank products
Product name
HBNP5213N6
CYStek Product Specification
Spec. No. : C627N6
Issued Date : 2013.10.17
Revised Date :
Page No. : 2/8
CYStech Electronics Corp.
Absolute Maximum Ratings (Ta=25°C)
Parameter
Symbol
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current(DC)
(Note 1)
Peak Collector Current
(Note 2)
Peak Base Current
(Note 2)
Total Power Dissipation (Note 1)
Linear Derating Factor
Operating Junction and Storage Temperature
Thermal Resistance, Junction-to-Ambient (Note 1)
VCBO
VCEO
VEBO
IC
ICP
IBP
Pd
Tj, Tstg
Rth,ja
Limits
NPN
100
80
7
1
2
200
PNP
-100
-80
-7
-1
-2
-200
1.14
0.01
-55~+150
110
Unit
V
V
V
A
A
mA
W
W / °C
°C
°C/W
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, t≤5 sec; 180°C/W when mounted on minimum copper pad
2.Pulse width limited by maximum junction temperature
NPN Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(SAT)
*VCE(SAT)
*VBE(SAT)
*hFE 1
*hFE 2
fT
Cob
HBNP5213N6
Min.
100
80
7
180
60
150
-
Typ.
0.15
230
6
Max.
100
100
0.3
0.5
1.2
390
15
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=50μA
IC=1mA
IE=50μA
VCB=100V, IE=0
VEB=7V, IC=0
IC=500mA, IB=20mA
IC=1A, IB=50mA
IC=1A, IB=50mA
VCE=10V, IC=150mA
VCE=10V, IC=500mA
VCE=10V, IC=50mA, f=100MHz
VCB=10V, IE=0A, f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
CYStek Product Specification
Spec. No. : C627N6
Issued Date : 2013.10.17
Revised Date :
Page No. : 3/8
CYStech Electronics Corp.
PNP Electrical Characteristics (Tj=25°C, unless otherwise specified)
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
*VCE(sat)1
*VCE(sat)2
*VBE(sat)
*hFE1
*hFE2
fT
Cob
Min.
-100
-80
-7
180
50
150
-
Typ.
-0.16
200
11
Max.
-100
-100
-0.3
-0.6
-1.2
390
15
Unit
V
V
V
nA
nA
V
V
V
MHz
pF
Test Conditions
IC=-100μA
IC=-10mA
IE=-10μA
VCB=-100V
VEB=-7V
IC=-500mA, IB=-50mA
IC=-700mA, IB=-35mA
IC=-1A, IB=-50mA
VCE=-10V, IC=-150mA
VCE=-10V, IC=-500mA
VCE=-10V, IC=-50mA, f=100MHz
VCB=-10V, IE=0A,f=1MHz
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
Recommended Soldering Footprint
HBNP5213N6
CYStek Product Specification
Spec. No. : C627N6
Issued Date : 2013.10.17
Revised Date :
Page No. : 4/8
CYStech Electronics Corp.
Q1, NPN Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
1000
1000
VCESAT
VCE=5V
Saturation Voltage-(mV)
Current Gain---HFE
HFE
100
VCE=2V
VCE=1V
10
IC=25IB
100
IC=10IB
10
1
10
100
Collector Current ---IC(mA)
1
1000
Saturation Voltage vs Collector Current
1000
10000
VBESAT@IC=10IB
VBEON@VCE=2V
On Voltage-(mV)
Saturation Voltage-(mV)
10
100
Collector Current ---IC(mA)
On Voltage vs Collector Current
10000
1000
1000
100
100
1
10
100
1000
10000
1
Collector Current--- IC(mA)
10
100
1000
Collector Current--- IC(mA)
10000
Capacitance Characteristics
Transition Frequency vs Collector Current
100
1000
f=1MHz
VCE=10V
f=1MHz
Capacitance---Cob(pF)
Transition Frequency---fT(MHz)
IC=20IB
100
10
1
10
1
HBNP5213N6
10
100
Collector Current---IC(mA)
1000
0.1
1
10
Collector Base Voltage-- VCB(V)
100
CYStek Product Specification
Spec. No. : C627N6
Issued Date : 2013.10.17
Revised Date :
Page No. : 5/8
CYStech Electronics Corp.
Q2, PNP Typical Characteristics
Current Gain vs Collector Current
Saturation Voltage vs Collector Current
10000
1000
100
Saturation Voltage---(mV)
Current Gain---HFE
VCE=3V
VCE=2V
VCE=1V
VCESAT
IC=100IB
IC=50IB
IC=20IB
IC=10IB
1000
100
10
10
1
10
100
Collector Current---IC(mA)
1000
1
Saturation Voltage vs Collector Current
1000
On Voltage vs Collector Current
1000
On Voltage---(mV)
Saturation Voltage---(mV)
1000
VBESAT@IC=10IB
100
VBEON@VCE=3V
100
1
10
100
Collector Current---IC(mA)
1000
1
Transition Frequency vs Collector Current
10
100
Collector Current---IC(mA)
1000
Capacitance Characteristics
1000
100
Collector Output Capacitance---Cob(pF)
Transition Frequency---fT(MHz)
10
100
Collector Current---IC(mA)
100
10
1
10
1
HBNP5213N6
10
100
Collector Current---IC(mA)
1000
1
10
100
Reverse-biased Collector Base Voltage---VCB(V)
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C627N6
Issued Date : 2013.10.17
Revised Date :
Page No. : 6/8
Reel Dimension
Carrier Tape Dimension
HBNP5213N6
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C627N6
Issued Date : 2013.10.17
Revised Date :
Page No. : 7/8
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5 °C
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature Min(TS min)
−Temperature Max(TS max)
−Time(ts min to ts max)
Time maintained above:
−Temperature (TL)
− Time (tL)
Peak Temperature(TP)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25 °C to peak temperature
Sn-Pb eutectic Assembly
Pb-free Assembly
3°C/second max.
3°C/second max.
100°C
150°C
60-120 seconds
150°C
200°C
60-180 seconds
183°C
60-150 seconds
240 +0/-5 °C
217°C
60-150 seconds
260 +0/-5 °C
10-30 seconds
20-40 seconds
6°C/second max.
6 minutes max.
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
HBNP5213N6
CYStek Product Specification
Spec. No. : C627N6
Issued Date : 2013.10.17
Revised Date :
Page No. : 8/8
CYStech Electronics Corp.
SOT-23-6L Dimension
Marking:
5213
Device Code
□□□□
Date Code
6Lead SOT-23-6L Plastic
Surface Mounted Package
CYStek Package Code: N6
Style:
Pin 1. Base 1
Pin 2. Emitter 2
Pin 3. Base 2
Pin 4. Collector 2
Pin 5. Emitter 1
Pin 6. Base 1
Millimeters
Min.
Max.
1.050
1.250
0.000
0.100
1.050
1.150
0.300
0.500
0.100
0.200
2.820
3.020
DIM
A
A1
A2
b
c
D
Inches
Min.
Max.
0.041
0.049
0.000
0.004
0.041
0.045
0.012
0.020
0.004
0.008
0.111
0.119
DIM
E
E1
e
e1
L
θ
Millimeters
Min.
Max.
1.500
1.700
2.650
2.950
0.950 (BSC)
1.800
2.000
0.300
0.600
0°
8°
(B1)
(E2)
(B2)
(C2)
(E1)
(B1)
Inches
Min.
Max.
0.059
0.067
0.104
0.116
0.037 (BSC)
0.071
0.079
0.012
0.024
0°
8°
Notes : 1.Controlling dimension : millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material :
• Lead : Pure tin plated.
• Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0.
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
HBNP5213N6
CYStek Product Specification
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