Fairchild H11G2SR2M High voltage photodarlington optocoupler Datasheet

H11G1M, H11G2M, H11G3M
High Voltage Photodarlington Optocouplers
Features
General Description
■ High BVCEO
The H11GXM series are photodarlington-type optically
coupled optocouplers. These devices have a gallium
arsenide infrared emitting diode coupled with a silicon
darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics.
■
■
■
■
– Minimum 100V for H11G1M
– Minimum 80V for H11G2M
– Minimum 55V for H11G3M
High sensitivity to low input current
(Min. 500% CTR at IF = 1mA)
Low leakage current at elevated temperature
(Max. 100µA at 80°C)
Underwriters Laboratory (UL) recognized
File # E90700, Volume 2
IEC 60747-5-2 approved (ordering option V)
Applications
■ CMOS logic interface
■ Telephone ring detector
■ Low input TTL interface
■ Power supply isolation
■ Replace pulse transformer
Schematic
ANODE 1
CATHODE 2
N/C 3
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
Package Outlines
6 BASE
5 COLLECTOR
4 EMITTER
www.fairchildsemi.com
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
September 2009
Symbol
Parameter
Value
Units
TOTAL DEVICE
TSTG
Storage Temperature
-40 to +150
°C
TOPR
Operating Temperature
-40 to +100
°C
TSOL
260 for 10 sec
°C
260
mW
Derate Above 25°C
3.5
mW/°C
IF
Forward Input Current
60
mA
VR
Reverse Input Voltage
6.0
V
Forward Current – Peak (1µs pulse, 300pps)
3.0
A
LED Power Dissipation @ TA = 25°C
100
mW
1.8
mW/°C
H11G1M
100
V
H11G2M
80
H11G3M
55
PD
Lead Solder Temperature (Wave Solder)
Total Device Power Dissipation @ TA = 25°C
EMITTER
IF(pk)
PD
Derate Above 25°C
DETECTOR
VCEO
PD
Collector-Emitter Voltage
Photodetector Power Dissipation @ TA = 25°C
Derate Above 25°C
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
200
mW
2.67
mW/°C
www.fairchildsemi.com
2
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
Absolute Maximum Ratings
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Individual Component Characteristics
Symbol
Characteristic
Test Conditions
Device
Min.
Typ.*
Max.
Unit
All
1.3
1.50
All
-1.8
mV/°C
25
V
50
pF
EMITTER
VF
Forward Voltage
∆VF
∆TA
Forward Voltage
Temp. Coefficient
IF = 10mA
BVR
Reverse Breakdown
Voltage
IR = 10µA
All
CJ
Junction Capacitance
VF = 0V, f = 1MHz
All
3.0
VF = 1V, f = 1MHz
IR
Reverse Leakage
Current
V
65
VR = 3.0V
All
0.001
10
µA
DETECTOR
BVCEO
BVCBO
BVEBO
ICEO
Breakdown Voltage
Collector to Emitter
Collector to Base
IC = 1.0mA, IF = 0
IC = 100µA
H11G1M
100
H11G2M
80
H11G3M
55
H11G1M
100
H11G2M
80
H11G3M
55
All
7
Emitter to Base
Leakage Current
Collector to Emitter
VCE = 80V, IF = 0
H11G1M
VCE = 60V, IF = 0
H11G2M
VCE = 30V, IF = 0
H11G3M
VCE = 80V, IF = 0, TA = 80°C
H11G1M
VCE = 60V, IF = 0, TA = 80°C
H11G2M
V
V
10
V
100
nA
100
µA
Transfer Characteristics
Symbol
Characteristics
Test Conditions
Device
Min.
Typ.*
IF = 10mA, VCE = 1V
H11G1M/2M
100 (1000)
IF = 1mA, VCE = 5V
H11G1M/2M
5 (500)
H11G3M
2 (200)
Max.
Units
EMITTER
CTR
VCE(SAT)
Current Transfer
Ratio, Collector to
Emitter
Saturation Voltage
mA (%)
IF = 16mA, IC = 50mA
H11G1M/2M
0.85
1.0
IF = 1mA, IC = 1mA
H11G1M/2M
0.75
1.0
H11G3M
0.85
1.2
IF = 20mA, IC = 50mA
V
SWITCHING TIMES
tON
Turn-on Time
tOFF
Turn-off Time
RL = 100Ω, IF = 10mA,
VCE = 5V, f ≤ 30Hz,
Pulse Width ≤ 300µs
All
5
µs
All
100
µs
Isolation Characteristics
Symbol
Device
Min.
VISO
Isolation Voltage
Characteristic
f = 60Hz, t = 1 sec.
Test Conditions
All
7500
Typ.*
VACPEAK
RISO
Isolation Resistance
VI-O = 500 VDC
All
1011
Ω
CISO
Isolation Capacitance
f = 1MHz
All
0.2
Max.
Units
pF
*All Typical values at TA = 25°C
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
www.fairchildsemi.com
3
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
Electrical Characteristics (TA = 25°C unless otherwise specified.)
As per IEC 60747-5-2, this optocoupler is suitable for “safe electrical insulation” only within the safety limit data.
Compliance with the safety ratings shall be ensured by means of protective circuits.
Symbol
Parameter
Min.
Typ.
Max.
Unit
Installation Classifications per DIN VDE 0110/1.89
Table 1
For Rated Main Voltage < 150Vrms
I-IV
For Rated Main voltage < 300Vrms
I-IV
Climatic Classification
55/100/21
Pollution Degree (DIN VDE 0110/1.89)
2
CTI
Comparative Tracking Index
175
VPR
Input to Output Test Voltage, Method b,
VIORM x 1.875 = VPR, 100% Production Test
with tm = 1 sec, Partial Discharge < 5pC
1594
Vpeak
Input to Output Test Voltage, Method a,
VIORM x 1.5 = VPR, Type and Sample Test
with tm = 60 sec, Partial Discharge < 5pC
1275
Vpeak
VIORM
Max. Working Insulation Voltage
850
Vpeak
VIOTM
Highest Allowable Over Voltage
6000
Vpeak
External Creepage
7
mm
External Clearance
7
mm
Insulation Thickness
0.5
mm
Insulation Resistance at Ts, VIO = 500V
109
Ω
RIO
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
www.fairchildsemi.com
4
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
Safety and Insulation Ratings
Fig. 2 Normalized Output Current vs. Temperature
Fig. 1 Output Current vs. Input Current
100
IC – NORMALIZED OUTPUT CURRENT
IC – NORMALIZED OUTPUT CURRENT
10
1
Normalized to:
VCE = 5V
IF = 1mA
0.1
0.01
0.001
0.1
1
IF = 50mA
10
IF = 5mA
IF = 1mA
1
IF = 0.5mA
0.1
0.01
-60
10
-40
0
20
40
60
80
100
120
90
100
Fig. 4 Collector-Emitter Dark Current
vs. Ambient Temperature
Fig. 3 Output Current vs. Collector - Emitter Voltage
1000
100
Normalized to:
VCE = 5V
IF = 1mA
TA = 25˚C
IF = 50mA
ICEO – DARK CURRENT (nA)
IC – NORMALIZED OUTPUT CURRENT
-20
TA – AMBIENT TEMPERATURE (˚C)
IF – LED INPUT CURRENT(mA)
10
Normalized to:
VCE = 5V
IF = 1mA
TA = 25˚C
IF = 10mA
IF = 2mA
IF = 1mA
1
IF = 0.5mA
0.1
VCE = 80V
100
VCE = 30V
10
VCE = 10V
1
0.1
0.01
0.01
1
0
10
10
20
30
40
50
60
70
80
TA – AMBIENT TEMPERATURE (˚C)
VCE – COLLECTOR – EMITTER VOLTAGE (V)
Fig. 5 Input Current vs. Total Switching Speed (Typical Values)
IF – FORWARD CURRENT (mA)
10
RL = 10Ω
RL = 100Ω
RL = 1kΩ
1
Normalized to:
VCC = 5V
IF = 10mA
RL = 100Ω
0.1
0.1
1
10
ton + toff – TOTAL SWITCHING SPEED (NORMALIZED)
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
www.fairchildsemi.com
5
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
Typical Performance Curves
Through Hole
0.4" Lead Spacing
8.13–8.89
6
4
8.13–8.89
6
4
1
3
6.10–6.60
6.10–6.60
Pin 1
1
3
Pin 1
5.08 (Max.)
0.25–0.36
7.62 (Typ.)
3.28–3.53
5.08 (Max.)
0.25–0.36
3.28–3.53
0.38 (Min.)
2.54–3.81
0.38 (Min.)
2.54–3.81
0.20–0.30
2.54 (Bsc)
(0.86)
15° (Typ.)
2.54 (Bsc)
(0.86)
0.41–0.51
1.02–1.78
0.20–0.30
0.41–0.51
0.76–1.14
10.16–10.80
1.02–1.78
0.76–1.14
Surface Mount
(1.78)
8.13–8.89
6
4
(1.52)
(2.54)
(7.49)
6.10–6.60
8.43–9.90
(10.54)
1
3
(0.76)
Pin 1
Rcommended Pad Layout
0.25–0.36
3.28–3.53
5.08
(Max.)
0.38 (Min.)
0.20–0.30
2.54 (Bsc)
(0.86)
0.16–0.88
(8.13)
0.41–0.51
1.02–1.78
0.76–1.14
Note:
All dimensions in mm.
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
www.fairchildsemi.com
6
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
Package Dimensions
Option
Order Entry Identifier
(Example)
No option
H11G1M
S
H11G1SM
SR2
H11G1SR2M
T
H11G1TM
0.4" Lead Spacing
V
H11G1VM
VDE 0884
TV
H11G1TVM
VDE 0884, 0.4" Lead Spacing
SV
H11G1SVM
VDE 0884, Surface Mount
SR2V
H11G1SR2VM
Description
Standard Through Hole Device
Surface Mount Lead Bend
Surface Mount; Tape and Reel
VDE 0884, Surface Mount, Tape and Reel
Marking Information
1
V
3
H11G1
2
X YY Q
6
4
5
Definitions
1
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
Fairchild logo
2
Device number
3
VDE mark (Note: Only appears on parts ordered with VDE
option – See order entry table)
4
One digit year code, e.g., ‘7’
5
Two digit work week ranging from ‘01’ to ‘53’
6
Assembly package code
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7
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
Ordering Information
12.0 ± 0.1
4.5 ± 0.20
2.0 ± 0.05
Ø1.5 MIN
4.0 ± 0.1
0.30 ± 0.05
1.75 ± 0.10
11.5 ± 1.0
21.0 ± 0.1
9.1 ± 0.20
Ø1.5 ± 0.1/-0
10.1 ± 0.20
0.1 MAX
24.0 ± 0.3
User Direction of Feed
Reflow Profile
300
260°C
280
260
>245°C = 42 Sec
240
220
200
180
°C
Time above
183°C = 90 Sec
160
140
120
1.822°C/Sec Ramp up rate
100
80
60
40
33 Sec
20
0
0
60
120
180
270
360
Time (s)
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
www.fairchildsemi.com
8
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
Carrier Tape Specification
Auto-SPM™
Build it Now™
CorePLUS™
CorePOWER™
CROSSVOLT™
CTL™
Current Transfer Logic™
EcoSPARK®
EfficentMax™
EZSWITCH™*
™*
®
®
Fairchild
Fairchild Semiconductor®
FACT Quiet Series™
FACT®
FAST®
FastvCore™
FETBench™
FlashWriter®*
FPS™
F-PFS™
FRFET®
SM
Global Power Resource
Green FPS™
Green FPS™ e-Series™
Gmax™
GTO™
IntelliMAX™
ISOPLANAR™
MegaBuck™
MICROCOUPLER™
MicroFET™
MicroPak™
MillerDrive™
MotionMax™
Motion-SPM™
OPTOLOGIC®
®
OPTOPLANAR
®
PDP SPM™
Power-SPM™
PowerTrench®
PowerXS™
Programmable Active Droop™
QFET®
QS™
Quiet Series™
RapidConfigure™
™
Saving our world, 1mW/W/kW at a time™
SmartMax™
SMART START™
SPM®
STEALTH™
SuperFET™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SupreMOS™
SyncFET™
Sync-Lock™
®
*
The Power Franchise®
TinyBoost™
TinyBuck™
TinyLogic®
TINYOPTO™
TinyPower™
TinyPWM™
TinyWire™
TriFault Detect™
TRUECURRENT™*
µSerDes™
UHC®
Ultra FRFET™
UniFET™
VCX™
VisualMax™
XS™
* Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Product Status
Advance Information
Formative / In Design
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
Definition
Datasheet contains the design specifications for product development. Specifications may change in
any manner without notice.
Datasheet contains preliminary data; supplementary data will be published at a later date. Fairchild
Semiconductor reserves the right to make changes at any time without notice to improve design.
Datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes
at any time without notice to improve the design.
Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor.
The datasheet is for reference information only.
Rev. I40
©2007 Fairchild Semiconductor Corporation
H11G1M, H11G2M, H11G3M Rev. 1.0.4
www.fairchildsemi.com
9
H11G1M, H11G2M, H11G3M — High Voltage Photodarlington Optocouplers
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