Vishay MBR2035CT-N3 Schottky rectifier, 2 x 10 a Datasheet

VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
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Vishay Semiconductors
Schottky Rectifier, 2 x 10 A
FEATURES
Base 2
common
cathode
Anode
TO-220AB
•
•
•
•
Anode
2
1 Common 3
cathode
•
•
•
PRODUCT SUMMARY
Package
•
TO-220AB
IF(AV)
2 x 10 A
VR
35 V, 45 V
VF at IF
0.57 V
IRM max.
15 mA at 125 °C
150 °C TJ operation
Low forward voltage drop
High frequency operation
High
purity,
high
temperature
epoxy
encapsulation for enhanced mechanical
strength and moisture resistance
Guard ring for enhanced ruggedness and long
term reliability
Compliant to RoHS Directive 2002/95/EC
Designed and qualified according to JEDEC-JESD47
Halogen-free according to IEC 61249-2-21 definition
(-N3 only)
DESCRIPTION
TJ max.
150 °C
Diode variation
Common cathode
EAS
8 mJ
This center tap Schottky rectifier has been optimized for low
reverse leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C
junction temperature. Typical applications are in switching
power supplies, converters, freewheeling diodes, and
reverse battery protection.
MAJOR RATINGS AND CHARACTERISTICS
CHARACTERISTICS
SYMBOL
IF(AV)
VALUES
UNITS
20
A
35/45
V
Rectangular waveform (per device)
VRRM
IFRM
TC = 135 °C (per leg)
20
IFSM
tp = 5 μs sine
1060
VF
10 Apk, TJ = 125 °C
0.57
V
TJ
Range
- 65 to 150
°C
A
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse
voltage
Maximum working peak
reverse voltage
SYMBOL
VS-MBR2035CTPbF
VS-MBR2035CT-N3
VS-MBR2045CTPbF
VS-MBR2045CT-N3
UNITS
35
35
45
45
V
VR
VRWM
ABSOLUTE MAXIMUM RATINGS
SYMBOL
PARAMETER
Maximum average
forward current
per leg
per device
Peak repetitive forward current per leg
TEST CONDITIONS
TC = 135 °C, rated VR
IFRM
Rated VR, square wave, 20 kHz, TC = 135 °C
IFSM
20
Following any rated load
condition and with rated VRRM
applied
Surge applied at rated load condition half wave,
single phase, 60 Hz
20
1060
A
150
Repetitive avalanche current per leg
IAR
Current decaying linearly to zero in 1 μs
Frequency limited by TJ maximum VA = 1.5 x VR typical
2
Non-repetitive avalanche energy per leg
EAS
TJ = 25 °C, IAS = 2 A, L = 4 mH
8
Revision: 29-Aug-11
UNITS
10
IF(AV)
5 µs sine or 3 µs rect. pulse
Non-repetitive peak surge current
VALUES
mJ
Document Number: 94288
1
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
TJ = 25 °C
20 A
VFM (1)
Maximum forward voltage drop
10 A
TJ = 125 °C
20 A
Maximum instantaneous reverse current
IRM (1)
Threshold voltage
VF(TO)
TJ = 25 °C
Rated DC voltage
TJ = 125 °C
TJ = TJ maximum
VALUES
UNITS
0.84
V
0.57
0.72
0.1
15
mA
0.354
V
17.6
m
Forward slope resistance
rt
Maximum junction capacitance
CT
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C
600
pF
Typical series inductance
LS
Measured from top of terminal to mounting plane
8.0
nH
10 000
V/µs
VALUES
UNITS
Maximum voltage rate of change
dV/dt
Rated VR
Note
(1) Pulse width < 300 μs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
- 65 to 150
Maximum storage temperature range
TStg
- 65 to 175
Maximum thermal resistance,
junction to case per leg
RthJC
DC operation
2.0
Typical thermal resistance,
case to heatsink
RthCS
Mounting surface, smooth and greased
(only for TO-220)
0.50
Approximate weight
Mounting torque
Marking device
Revision: 29-Aug-11
minimum
maximum
Non-lubricated threads
Case style TO-220AB
°C
°C/W
2
g
0.07
oz.
6 (5)
kgf · cm
(lbf·in)
12 (10)
MBR2035CT
MBR2045CT
Document Number: 94288
2
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
IF - Instantaneous Forward Current (A)
www.vishay.com
Vishay Semiconductors
100
IR - Reverse Current (mA)
100
10
TJ = 150 °C
TJ = 125 °C
TJ = 25 °C
1
0.2
TJ = 150 °C
10
TJ = 125 °C
1
TJ = 100 °C
TJ = 75 °C
0.1
TJ = 50 °C
0.01
TJ = 25 °C
0.001
0.0001
0.4
0.6
0.8
1.0
1.4
1.2
1.6
5
0
1.8
10
15
20
25
30
35
40
45
VFM - Forward Voltage Drop (V)
VR - Reverse Voltage (V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
(Per Leg)
Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage (Per Leg)
CT - Junction Capacitance (pF)
1000
TJ = 25 °C
100
0
10
20
30
40
50
VR - Reverse Voltage (V)
ZthJC - Thermal Impedance (°C/W)
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)
10
1
0.1
Single pulse
(thermal resistance)
0.01
0.00001
0.0001
0.001
PDM
D = 0.75
D = 0.50
D = 0.33
D = 0.25
D = 0.20
0.01
t1
t2
Notes:
1. Duty factor D = t1/t2
2. Peak TJ = PDM x ZthJC + TC
0.1
1
10
100
t1 - Rectangular Pulse Duration (s)
Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg)
Revision: 29-Aug-11
Document Number: 94288
3
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com
Vishay Semiconductors
10
145
Average Power Loss (W)
Allowable Case Temperature (°C)
150
140
DC
135
Square wave (D = 0.50)
Rated VR applied
130
125
D = 0.20
D = 0.25
D = 0.33
D = 0.50
D = 0.75
8
6
RMS limit
4
DC
2
See note (1)
0
120
0
3
9
6
12
2
0
15
4
6
8
10
12
14
16
IF(AV) - Average Forward Current (A)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current (Per Leg)
Fig. 6 - Forward Power Loss Characteristics (Per Leg)
IFSM - Non-Repetitive Surge Current (A)
IF(AV) - Average Forward Current (A)
1000
At any rated load condition
and with rated VRRM applied
following surge
100
10
100
1000
10 000
tp - Square Wave Pulse Duration (µs)
Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg)
Note
(1) Formula used: T = T - (Pd + Pd
C
J
REV) x RthJC;
Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6);
PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated VR
Revision: 29-Aug-11
Document Number: 94288
4
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-MBR20...CTPbF Series, VS-MBR20...CT-N3 Series
www.vishay.com
Vishay Semiconductors
ORDERING INFORMATION TABLE
Device code
VS- MBR
1
2
20
45
CT
PbF
3
4
5
6
1
-
Vishay Semiconductors product
2
-
Schottky MBR series
3
-
Current rating (20 = 20 A)
4
-
Voltage ratings
5
-
CT = Essential part number
6
-
Environmental digit
35 = 35 V
45 = 45 V
PbF = Lead (Pb)-free and RoHS compliant
-N3 = Halogen-free, RoHS compliant, and totally lead (Pb)-free
ORDERING INFORMATION (Example)
PREFERRED P/N
VS-MBR2035CTPbF
QUANTITY PER T/R
MINIMUM ORDER QUANTITY
PACKAGING DESCRIPTION
50
1000
Antistatic plastic tube
VS-MBR2035CT-N3
50
1000
Antistatic plastic tube
VS-MBR2045CTPbF
50
1000
Antistatic plastic tube
VS-MBR2045CT-N3
50
1000
Antistatic plastic tube
LINKS TO RELATED DOCUMENTS
Dimensions
Part marking information
SPICE model
Revision: 29-Aug-11
www.vishay.com/doc?95222
TO-220AB PbF
www.vishay.com/doc?95225
TO-220AB -N3
www.vishay.com/doc?95028
www.vishay.com/doc?95295
Document Number: 94288
5
For technical questions within your region: [email protected], [email protected], [email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Outline Dimensions
Vishay Semiconductors
TO-220AB
DIMENSIONS in millimeters and inches
A
(6)
E
E2
ØP
0.014 M B A M
(7)
A
B
Seating
plane
A
Thermal pad
(E)
A1
1
Q
(6)
D
(H1)
H1
(7)
C
D2 (6)
(6) D
2 3
D
L1 (2)
C
Detail B
D1
3xb
1
2
3
3 x b2
Detail B
C
E1 (6)
L
Base metal
View A - A
c
Plating
c1 (4)
c
A
2x e
A2
e1
(b, b2)
b1, b3
(4)
Section C - C and D - D
0.015 M B A M
Lead assignments
Lead tip
Diodes
Conforms to JEDEC outline TO-220AB
1. - Anode/open
2. - Cathode
3. - Anode
SYMBOL
MILLIMETERS
MIN.
MAX.
4.25
4.65
1.14
1.40
2.56
2.92
0.69
1.01
0.38
0.97
1.20
1.73
1.14
1.73
0.36
0.61
0.36
0.56
14.85
15.25
8.38
9.02
11.68
12.88
INCHES
MIN.
MAX.
0.167
0.183
0.045
0.055
0.101
0.115
0.027
0.040
0.015
0.038
0.047
0.068
0.045
0.068
0.014
0.024
0.014
0.022
0.585
0.600
0.330
0.355
0.460
0.507
NOTES
A
A1
A2
b
b1
4
b2
b3
4
c
c1
4
D
3
D1
D2
6
Notes
(1) Dimensioning and tolerancing as per ASME Y14.5M-1994
(2) Lead dimension and finish uncontrolled in L1
(3) Dimension D, D1 and E do not include mold flash. Mold flash
shall not exceed 0.127 mm (0.005") per side. These dimensions
are measured at the outermost extremes of the plastic body
(4) Dimension b1, b3 and c1 apply to base metal only
(5) Controlling dimensions: inches
(6) Thermal pad contour optional within dimensions E, H1, D2 and
E1
Document Number: 95222
Revision: 08-Mar-11
SYMBOL
E
E1
E2
e
e1
H1
L
L1
ØP
Q

(7)
(8)
MILLIMETERS
MIN.
MAX.
10.11
10.51
6.86
8.89
0.76
2.41
2.67
4.88
5.28
6.09
6.48
13.52
14.02
3.32
3.82
3.54
3.73
2.60
3.00
90° to 93°
INCHES
MIN.
MAX.
0.398
0.414
0.270
0.350
0.030
0.095
0.105
0.192
0.208
0.240
0.255
0.532
0.552
0.131
0.150
0.139
0.147
0.102
0.118
90° to 93°
NOTES
3, 6
6
7
6, 7
2
Dimensions E2 x H1 define a zone where stamping and
singulation irregularities are allowed
Outline conforms to JEDEC TO-220, except A2 (maximum) and
D2 (minimum) where dimensions are derived from the actual
package outline
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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Revision: 12-Mar-12
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Document Number: 91000
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